InGaN/GaN quantum wells
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
... of InGaN/GaN quantum wells on freestanding GaN gratings by molecular beam epitaxy ...Various GaN gratings are defined by electron beam lithography and realized on GaN-on- ...
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Phosphor Free Apple White LEDs with Embedded Indium Rich Nanostructures Grown on Strain Relaxed Nano epitaxy GaN
... conventional InGaN/GaN MQWs were grown on GaN (sample E) and nano-ELO GaN template (sample F) before it was capped with a 200 nm thick ...conventional InGaN/GaN MQWs emission and ...
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Exciton properties in zincblende InGaN GaN quantum wells under the effects of intense laser fields
... The column at the left-hand side contains the graphics that correspond to the conduction band profile, while the corresponding valence band bendings are shown in the column at the right. It is possible to observe the evo- ...
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InGaN/GaN quantum wells grown on polar and nonpolar GaN substrates
... between GaN and sapphire, the main substrate for commercial LEDs, is 13% ...emissions, InGaN QWs’ immunity to the structural defects drew much research attention in the last ...as quantum dot ...
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Analysis of the stability of InGaN/GaN multiquantum wells against ion beam intermixing
... measurements show that damage builds up with a similar trend for In and Ga atoms, with a high threshold for amorphization. The extended defects induced during the implantation, basal and prismatic stacking faults, are ...
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Reduction of Polarization Field Strength in Fully Strained c Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD
... In this paper, the polarization strengths in quantum well structures with indium content varying from 14.8 to 26.5% are experimentally investigated through photo- luminescence and high-resolution X-ray diffraction ...
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Enhanced Light Emission due to Formation of Semi polar InGaN/GaN Multi quantum Wells
... In summary, we have studied the emission properties of semi-polar InGaN/GaN MQWs in the V-shaped pits. The light-emitting energy level of semi-polar QW is 355.8 meV higher than that of (0001) QW, which pre- ...
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Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells
... multiple quantum well (MQW) light- emitting diodes (LEDs) have attracted much attention for the potential application in next generation solid- state ...internal quantum efficiency (IQE) of the green ...
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Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods
... The GaN films patterned by nano- spheres were then placed back into the reactor for further ...of GaN used (~300 nm estimated growth thickness) were the same as for the bulk base ...The InGaN ...
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Impact of alloy fluctuations and Coulomb effects on the electronic and optical properties of c-plane GaN/AlGaN quantum wells
... in InGaN/GaN QWs are absent, as discussed ...c-plane InGaN/GaN QWs with independently localized carriers or if it is ...c-plane InGaN/GaN QW systems, electrons and holes are not ...
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Optical and Structural Characterization of InGaN/GaN Multiple Quantum Wells by Epitaxial Lateral Overgrowth
... the GaN layer starts on the unmasked sapphire surface and the layer overrides on the mask without voids on it, resulting in a ...two GaN layers from the both mask edges collide with each ...the GaN ...
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Cathodoluminescence hyperspectral imaging of trench-like defects in InGaN/GaN quantum well structures
... cathodoluminescence (CL) hyperspectral imaging to study InGaN/GaN multiple quantum well (MQW) structures. Different types of trench defects with varying trench width, namely wide or narrow trenches ...
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Temporally and spatially resolved photoluminescence investigation of (11(2)over-bar2) semi-polar InGaN/GaN multiple quantum wells grown on nanorod templates
... Figure 1(a) gives the time-integrated PL (TIPL) spectra of all samples measured under identical conditions at 7 K, showing that the peak emission wavelength increases from 425 to 505 nm with increasing the indium ...
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Study of GaN-based Materials for Light-emitting Applications
... with InGaN/GaN quantum ...an InGaN well sandwiched between GaN barriers), the spinodal may perhaps be suppressed relative to the unstrained ...in InGaN/GaN structures ...
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The effect of free standing GaN substrate on carrier localization in ultraviolet InGaN light emitting diodes
... for InGaN-based UV-LED de- vices to develop fully their ...the InGaN-based UV-LEDs were grown on sapphire substrate by hetero-epitaxial techniques, such as metal-organic chemical vapor deposition ...of ...
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InGaN/GaN multilayer quantum dots yellow green light emitting diode with optimized GaN barriers
... internal quantum efficiency (IQE) of InGaN/GaN multi-quantum wells (MQWs) with high indium ...between InGaN and GaN act as nonradiative recombination centers, thus weaken- ...
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Finite-Difference Time-Domain Simulations on Overgrown InGaN/GaN Multiple Quantum Well (MQW) Light Emitting Diode (LED).
... on GaN (wurtzite) nanostructures because the facets of GaN nanostructures expose their semi-polar and non-polar planes for the active layer ...Specifically, InGaN/GaN multiple quantum ...
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Strain Controlled Recombination in InGaN/GaN Multiple Quantum Wells on Silicon Substrates
... of InGaN crystal with ...n-type GaN layer has a noteworthily redshifted PL peak at 579 nm, S3 with InGaN inserted layer has a slightly blueshifted PL peak at 517 nm, and S4 with AlGaN inserted layer ...
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Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2 Grown GaN Barrier
... to the following two possible mechanisms about hydro- gen over-etching mechanisms. One is the hydrogen over-etching on dislocation sites and V-pits. As afore- mentioned, the enhanced diffusion of Ga atoms plays a ...
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Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
... high-aspect-ratio GaN nano- rods is an essential first step in the growth and fabrication of a broad range of devices such as GaN/InGaN core-shell light-emitting diodes, 1–6 solar-cells, 7 and ...
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