low-k dielectrics characterization
Device Fabrication and Characterization for Alternative Gate Stack Devices
... with high-K dielectrics in order to reduce the gate leakage current. The ITRS [1] gives specifications for 3 different applications, namely: high performance, low operating power and low ...
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Electrical characterization of different high k dielectrics with tungsten silicide in vertical double gate NMOS structure
... sharing effect between the source and the drain region. The channel length (Lc) can be controlled by varying the height of the silicon pillar [21,33]. Alternatively, the channel length (Lc) can also be controlled by ...
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Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications.
... high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond ...high-k dielectrics as IPDs in a ...
247
Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.
... of low interface trap density for the application of high-k dielectrics for high performance Ge ...and low interface trap density were achieved by thermally stable pseudo ternary HfSiON with ...
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Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application
... high-k dielectrics such as hafnium oxide, titanium oxide, and ternary alloys with nitrided films of each of the above, as well as silicon dioxide on silicon and germanium ...obtain low defect density ...
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Interface reactions during processing of chemical vapor deposited yttrium oxide high-k dielectrics
... groups have reported results that demonstrate oxidation of the silicon substrate during deposition or during post-deposition anneals. Such silicon consumption reactions are particularly detrimental, in part, because they ...
233
Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition
... Y-silicate dielectrics in contrast to ZrO 2 and Al 2 O 3 ...Very low resistivity Ru and rutile stoichiometric RuO 2 films, deposited via reactive sputtering, were evaluated as gate electrodes on ultrathin ...
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Parameter estimation versus homogenization techniques in time-domain characterization of composite dielectrics
... In the right plot of Figure 17 we compare the DRF from the inverse problem and homogenization approaches to the MG mixing rule result and the DRF obtained by using the weighted average o[r] ...
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Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces
... surface is not chemically pure; there are small traces of carbon and oxygen present on the surface which are expected to degrade the Si/Ge interface. The Ge/HfSiON interface is formed in situ in a chemically controlled ...
345
Conjugacy Classes of Maximal k-split Tori Invariant Under an Involution of SL(n,k).
... symmetric k-varieties over an arbitrary field ...symmetric k-varieties, it is important to first understand their ...parabolic k-subgroups on symmetric k-varieties helps in identifying the ...
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A new characterization of Ree group $\mathbf{{}^2G_2(q)}$ by the order of group and the number of elements with the same order
... The characterization of groups by nse pertains to Thompson’s problem ([15]) which Shi posed it in [24]. The first time, this type of characterization was studied by Shao and Shi. In [23], they proved that ...
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Characterization of High-k Dielectrics and Interfaces on Device Reliability
... respectively, were then deposited by RPE-MOCVD at 300°C.[11] The sacrificial layer had a thickness of 0.7 ± 0.1 nm and was grown in order to prevent direct reaction between the Ge substrate and the high-k film, as ...
144
Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics
... In this paper, we perform a quantitative analysis of the gate capacitance of MOS structures with high-K gate-dielectric materials to study the effects of different dielectric materials on the modeling of the gate ...
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Low series resistance structures for gate dielectrics with a high leakage current
... The standards used for LRRM: 1) the line or thru, 2) two different reflection standards (which do not require characterization) and 3) a matched load. Only one of the two ports has to be matched by a trimmed ...
107
Fast and Stable Integration Method for the Aperture Admittance of an Open-Ended Coaxial Probe Terminated into Low-Loss Dielectrics
... MUTs are shown in Fig. 3. Firstly, comparison between TIM and CIT indicates that they render the same calculated values in the whole frequency range for different dielectrics. This is attributed to the same ...
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Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics
... to low-fluence heavy-ion irradiation [4]; this group speculated that the effect could be due to gate rupture, which until that time had been observed only in high-power ...native dielectrics with unknown ...
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Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
... However, vacuum-based deposition techniques suffer from potential incompatibility with large area deposition and high manufacturing cost. Thus significant research has been focused on the development of alternative ...
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Electrical Performance and Stability of ZnO Thin-Film Transistors Incorporating Gadolinium Oxide High-k Dielectrics
... Abstract: This work investigates the performance and gate bias stress instability of ZnO-based thin film transistors (ZnO- TFTs) incorporating amorphous gadolinium oxide, a high-k dielectric material. ZnO thin ...
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Characterization in R K Narayan's The man eater of malgudi
... Dateless Diary. There are a number of literary awards and distinctions to his credit. He received the Sahitya Academy Award for The Guide in 1961. Padma Bhushan was awarded to him in 1964. The University of Leeds honored ...
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Application of a Coaxial-Fed Patch to Microwave Non-Destructive Porosity Measurements in Low-Loss Dielectrics
... of low- loss dielectric materials through a microwave non-destructive technique (NDT) is carried out by resorting to a simple coaxial-fed patch ...of low-loss dielectric ...
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