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low-temperature silicon nitride deposition

IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition

IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition

... the low-wavenumber side ( ν 3 ) is considered to be caused by such a reduction with the generation of the new peak ( ν 4 ...the low-wavenumber side (840 cm − 1 ) of the ...

8

Charge Defects in Low Temperature Silicon Nitride/Silicon Interfaces for Application in Computational Clothing and Electronic Textiles

Charge Defects in Low Temperature Silicon Nitride/Silicon Interfaces for Application in Computational Clothing and Electronic Textiles

... at low temperature. Low temperature deposition is essential in the fabrication of active matrix liquid crystal displays because glass or plastics are used as the transparent substrate ...

99

Fabrication and characterization of silicon nitride thin film planar waveguides produced by RF magnetron sputtering technique

Fabrication and characterization of silicon nitride thin film planar waveguides produced by RF magnetron sputtering technique

... of silicon nitride thin film as a planar waveguide for sensing applications, the features such as sensitivity, miniaturization, immobilization protocols and detection techniques are being ...high ...

59

Structural and Electrical Characterization of Sintered Silicon Nitride Ceramic

Structural and Electrical Characterization of Sintered Silicon Nitride Ceramic

... Silicon nitride-based ceramics have many excellent properties, high strength and relatively high fracture toughness, good wear resistance, good oxidation resis- tance and good corrosion ...[1]. ...

10

Silicon carbide fibre silicon nitride matrix composites

Silicon carbide fibre silicon nitride matrix composites

... nitriding temperature needed to convert the silicon to silicon nitride (1350°C) causes irreversible dam age to the fibre (as discussed ...f silicon powder containing a num ber o f ...

169

STUDY OF CARBON NANOTUBE FOR SCANNING PROBE MICROSCOPY

STUDY OF CARBON NANOTUBE FOR SCANNING PROBE MICROSCOPY

... The advanced imaging capabilities, well-defined morphology, and resistanceto wear of nanotube AFM probes, compared to conventional tips, weretechnological driving forces for their rapid development into new classes of ...

10

New applications of excimer lamps to the low temperature photo-deposition of thin films

New applications of excimer lamps to the low temperature photo-deposition of thin films

... room temperature, and also since no degasing of the piping materials is likely to happen at high pressures (few atm), this shows well how dramatically anultra low concentration of impurities can alter the ...

229

On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

On the Growth and Microstructure of Carbon Nanotubes Grown by Thermal Chemical Vapor Deposition

... untreated silicon and quartz, Fe-deposited silicon and quartz, HF-treated silicon, silicon nitride-deposited silicon, copper foil, and stainless steel mesh using thermal chemical ...

6

SiOx
              /SiNy
               multilayers for photovoltaic and photonic applications

SiOx /SiNy multilayers for photovoltaic and photonic applications

... 13. Conibeer G, Green MA, Perez- Wurfl I, Huang S, Hao X, Di D, Shi L, Shrestha S, Puthen-Veetil B, So Y, Zhang B, Wan Z: Silicon quantum dot based solar cells: addressing the issues of doping, voltage and current ...

6

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

Single, double and surround gate vertical MOSFETs with reduced parasitic capacitance

... The vertical MOSFET structure is one of the solutions for reducing the channel length of transistors under 50 nm. Surround gates can be easily realised in vertical MOSFETs which offer increased channel width per unit ...

9

Lateral electrical transport, optical properties and photocurrent measurements in two dimensional arrays of silicon nanocrystals embedded in SiO2

Lateral electrical transport, optical properties and photocurrent measurements in two dimensional arrays of silicon nanocrystals embedded in SiO2

... a silicon dioxide layer of 18 ...a silicon dioxide barrier layer was also formed between the Si NCs in the films during oxidation, redu- cing also the lateral size of the Si ...nitrogen temperature ...

6

Solubilities and Equilibrium Distribution Coefficients of Oxygen and
Carbon in Silicon

Solubilities and Equilibrium Distribution Coefficients of Oxygen and Carbon in Silicon

... the silicon rod were determined as a func- tion of the distance from top by CPAA (charged particle ac- tivation analysis) ...of silicon carbide on the surface of silicon rods was concluded as the ...

5

Metal Ir coatings on endocardial electrode tips, obtained by MOCVD

Metal Ir coatings on endocardial electrode tips, obtained by MOCVD

... The present work demonstrates the application of the Metal-Organic Chemical Vapor Deposition technique to fabricate metal iridium coatings onto the pole tips of endocardial electrodes. Using iridium (III) ...

24

Evaluation of Low Dose Silicon Carbide Temperature Monitors

Evaluation of Low Dose Silicon Carbide Temperature Monitors

... SiC temperature monitor has a major impact on the radiation-induced swelling and, thus, the ensuing peak irradiation temperature ...evaluation. Temperature monitors were fabricated from material ...

12

Low temperature gettering in multicrystalline silicon materials for photovoltaics

Low temperature gettering in multicrystalline silicon materials for photovoltaics

... multicrystalline silicon materials without incorporating an additional layer on the surface and explicitly gettering at defective regions in the bulk material [36, 41, 44, ...with silicon nitride ...

252

Vogel, Sebastian
  

(2019):


	Phosphorus nitrides at extreme conditions.


Dissertation, LMU München: Fakultät für Chemie und Pharmazie

Vogel, Sebastian (2019): Phosphorus nitrides at extreme conditions. Dissertation, LMU München: Fakultät für Chemie und Pharmazie

... Powder X-ray diffraction data were collected on a STOE Stadi P diffractometer (STOE & Cie GmbH, Darmstadt, Cu-K α 1 radiation, λ = 1.5406 Å, Ge(111) monochromator) equipped with a MYTHEN 1K Si strip detector in ...

279

Silicon nitride photonics for the near infrared

Silicon nitride photonics for the near infrared

... materials, silicon nitride (SiN) has gained significant attention not only due to its CMOS compatibility but also due to its flexible optical properties, that can be easily tuned during fabrication to ...

12

In-situ reactive synthesis of full dense Si2N2O by incorporating of Amourphous nanosized Si3N4;effect of MgO and Y2O3

In-situ reactive synthesis of full dense Si2N2O by incorporating of Amourphous nanosized Si3N4;effect of MgO and Y2O3

... Raman spectra were taken on dispersive Raman microscopy (BRUKER, Germany, model: Senterra) equipped with CCD detector and Laser wave number of 785nm. The photoluminescence (PL) emission and excitation spectra were ...

10

Biological Impact of Silicon Nitride for Orthopaedic Applications: Role of Particle Size, Surface Composition and Donor Variation

Biological Impact of Silicon Nitride for Orthopaedic Applications: Role of Particle Size, Surface Composition and Donor Variation

... It is widely recognised that the particle size and surface chemistry are key factors influencing the biolog- ical interactions of particles with cells. Nanoscale CoCr wear particles generated by modern medical grade ...

12

Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template

Planar Edge Defined Alternate Layer Process (PEDAL) - An Unconventional Technique for Fabricatinon of Wafer Scale Sub-25 nm Nanowires and Nanowire Template

... selective deposition of metal on substrate by lift-off ...requires low wavelength light and complicated mask designs involving optical proximity correction and phase shifters to retain exposed resist ...

241

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