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Magnetic tunnel junctions (MTJs)

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

Temperature dependence of shot noise in double barrier magnetic tunnel junctions

... Magnetic tunnel junctions (MTJs) [1,2] have broad applica- tion prospects due to their giant tunneling magnetoresistance (TMR) ...[3–9]. MTJs based on symmetry-preserved tunneling have ...

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The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions

The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions

... magnetic tunnel junctions (MTJs) emerged as a promising component for magnetic sensors and magnetic random access memory ...MgO tunnel barriers in magnetic ...

5

Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

Field sensing in MgO double barrier magnetic tunnel junctions with a superparamagnetic Co50Fe50 free layer

... Magnetic tunnel junctions (MTJs) with crystalline MgO barriers have been extensively studied due to their high tun- neling magnetoresistance (TMR) and potential for applica- tions in spin ...

5

Prediction of  large bias dependent magnetoresistance in al l oxide magnetic tunnel junctions with a  ferroelectric barrier

Prediction of large bias dependent magnetoresistance in al l oxide magnetic tunnel junctions with a ferroelectric barrier

... many magnetic data storage technologies, in particular since extremely large tunneling magnetoresistance (TMR) was ...producing magnetic tunnel junctions (MTJs) with large TMR was ...

5

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam

... buried magnetic tunnel junctions (MTJs) to reveal the origin of the reduction in tunnelling magnetoresistance (TMR) ratios for some of the ...buried junctions using a decelerated ...

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Computational design of usual magnetic tunnel junctions

Computational design of usual magnetic tunnel junctions

... amorphous magnetic tunnel junctions (MTJ) and measured the cur- rent in both the parallel and anti-parallel configuration of the magnetic moments of the iron and cobalt electrodes (see in ...

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Superparamagnetism in MgO based magnetic tunnel junctions with a thin pinned ferromagnetic electrode

Superparamagnetism in MgO based magnetic tunnel junctions with a thin pinned ferromagnetic electrode

... MgO-based magnetic tunnel junctions have been fabricated with a thin Co 40 Fe 40 B 20 共 CoFeB 兲 layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB ...the magnetic anisotropy ...

5

Magnetically soft, high moment grain refined Fe films: application to magnetic tunnel junctions

Magnetically soft, high moment grain refined Fe films: application to magnetic tunnel junctions

... soft magnetic properties of iron nitride based films, both in single and multiphase ...data magnetic recording, magnetically soft, high moment pole materials are ...and magnetic tunnel ...

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Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

Tunneling processes in asymmetric double barrier magnetic tunnel junctions with a thin top MgO layer

... barrier magnetic tunnel junctions with a thin top MgO ...normal tunnel-like behavior, while the resistance in the parallel state shows metallic-like transport, indicating the presence of ...

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A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions

A Two-Band Tight-Binding Model of Spin-Polarized Transport in Magnetic Tunnel Junctions

... in magnetic tunnel junctions [9-11] revealed the details of TMR and GMR mechanisms in ballistic ...MgO-based magnetic tunnel junctions was investigated in two-band free electron ...

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Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga

Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga

... bottom-pinned synthetic antiferromagnet magnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room temperature. Exchange bias fields as high as 150 mT can ...

5

Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO based magnetic tunnel junctions

Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO based magnetic tunnel junctions

... MgO-based MTJs [6], ...such MTJs [8], [9]. Nowadays well-oriented (001) MgO-based MTJs have given a TMR ratio of more than 1000% at low temperature and 500% at room temperature [10], which accords ...

5

Annealing effect on tunneling magnetoresistance in MgO based magnetic tunnel junctions with FeMn exchange bias layer

Annealing effect on tunneling magnetoresistance in MgO based magnetic tunnel junctions with FeMn exchange bias layer

... A sign reversal of the TMR effect in MgO-based FeMn- MTJs, changing from inverted to normal, has been studied as a function of the annealing temperature. The inverted TMR effect is due to the imbalance of the SAF ...

5

Spin transfer torque magnetisation switching in MgO based magnetic tunnel junctions

Spin transfer torque magnetisation switching in MgO based magnetic tunnel junctions

... In this thesis, first, the fundamentals of MTJs were explored by investigating different tunnel barrier materials, then, a new physical phenomenon called spin transfer torque magnetisati[r] ...

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Spin polarized tunneling in hybrid magnetic tunnel junctions comprising C60

Spin polarized tunneling in hybrid magnetic tunnel junctions comprising C60

... The magnetic field dependence of the junction resistance (magnetoresistance) was measured with a four-point measurement technique with different applied bias voltages at various temperatures (ranging from room ...

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Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero moment half metal

Effect of insertion layer on electrode properties in magnetic tunnel junctions with a zero moment half metal

... µm² MTJs to measure magnetotransport as function of applied magnetic field and bias ...the magnetic field applied perpendicular to the sample ...for MTJs with Ta ...thinnest tunnel ...

8

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

... double MTJs. The magnetic thermal annealing en- hances the TMR ratio for both MTJs but the double barrier shows a lower TMR ratio compared with the single ...barrier junctions exhibit a larger ...

7

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

Low frequency noise peak near magnon emission energy in magnetic tunnel junctions

... frequency for magnons, and THz frequency for phonons and atomic vibrations assumed in RTN of nanobridges. 19,26 The attempt frequency was not explicitly discussed in previous measurements of RTN in MTJs. 12,23 ...

9

Evidence for boron diffusion into sub-stoichiometric MgO (001) barriers in CoFeB/MgO-based magnetic tunnel junctions

Evidence for boron diffusion into sub-stoichiometric MgO (001) barriers in CoFeB/MgO-based magnetic tunnel junctions

... C, bright field STEM imaging reveals that the top CoFeB partially crystallizes into bcc CoFe with (001) texture, whereas the bottom CoFeB remains amorphous [Fig. 3(a)]. A thin, low density, amorphous layer is still ...

8

MgO based magnetic tunnel junctions and their applications

MgO based magnetic tunnel junctions and their applications

... the magnetic alignment o f the ...the magnetic alignment (see Table ...nonmagnetic tunnel junctions [17]. The way the electrons tunnel through the barrier depending on the layer ...

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