magnetron sputter deposition

Top PDF magnetron sputter deposition:

Anisotropic Tix
              Sn1 x
              O2 nanostructures prepared by magnetron sputter deposition

Anisotropic Tix Sn1 x O2 nanostructures prepared by magnetron sputter deposition

shadowing effects, is applied to fabricating a variety of nanostructures, such as columns, helixes, and springs [7-11]. With the combination of GLAD and magnetron sputter deposition techniques, arrays of uniquely shaped nanostructures built from a wide range of material sys- tems can be created. However, the preparation of oxides by glancing angle sputter deposition is rarely reported, as the sputtering of oxide targets is hard to maintain in the pressure technically required for GLAD. In this study, periodic arrays of Ti x Sn 1- x O 2 nanostructures were

5 Read more

STRUCTURE AND MECHANICAL AND TRIBOLOGICAL PROPERTIES OF MAGNETRON SPUTTER DEPOSITION OF STAINLES-STEEL NITRIDE AND CARBIDE THIN FILMS WITH TRANSITION METAL ADDITIVES, Faisal Alresheedi

STRUCTURE AND MECHANICAL AND TRIBOLOGICAL PROPERTIES OF MAGNETRON SPUTTER DEPOSITION OF STAINLES-STEEL NITRIDE AND CARBIDE THIN FILMS WITH TRANSITION METAL ADDITIVES, Faisal Alresheedi

temperature. An alumina ball (6.25 mm diameter) was utilized as the counterface. A 100g (1N) load was applied, and the sliding track was rotated at 200 rpm and the coated disks were run to reach nearly 4500 cycles. Fig. 7.4 shows that the tribological properties of the SS-Cr-N films deposited at a constant power ratios of 50W/150W and different temperature and bias levels. The results are also tabulated in Table 7.3, showing the average, maximum, minimum and standard deviation in friction values. The film which was grown at 150C and -140V displayed the lowest average of the friction coefficient obtained in this study (0.35). Increase the deposition temperature to 250C at the same bias showed a higher friction. It is interesting to note that the friction coefficient higher in the latter film even though it had a higher hardness in comparison to the 150C film. Moreover, reducing the bias to -100V showed an even a worse result and this might be because this coating has a much lower hardness compared to the other films. Increase the substrate temperature further to 350C showed an improved friction coefficient with an average of 0.36.
Show more

169 Read more

Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films

Evaluation of structure and material properties of RF magnetron sputter-deposited yttria-stabilized zirconia thin films

The present work is part of a larger research initiative that is aimed at using RF magnetron sputter deposition of yttria-stabilized zirconia to improve the fracture toughness of brittle substrates (more specifically dental ceramics). Thompson et al. reported that dental restorations typically fail due to critical flaws on the surface that is cemented to the tooth and placed under tension during function. These surface flaws, generated from manufacturing or handling preparation, are the primary reason of failure. A proposed method to eliminate or passivate such flaws is to apply a thin film on the surface. Teixeira et al. investigated the strengthening of dental porcelain as a function of YSZ thin film thickness. The results showed that the strength of porcelain significantly increased with deposition of a 3µm YSZ coating. A non-linear relationship was observed between film thickness and strength. It was presumed that strengthening is due to modification of surface flaws and/or surface residual stress by the applied thin film [7].
Show more

153 Read more

Fe Pd Ferromagnetic Shape Memory Alloy Thin Films Made By Dual Source DC Magnetron Sputtering*

Fe Pd Ferromagnetic Shape Memory Alloy Thin Films Made By Dual Source DC Magnetron Sputtering*

Among few studies of Fe–Pd alloy thin films, 19,20) we have already reported the SM behavior ofFe–28–32 at%Pd films deposited from a composite target consisting of an Fe–Pd alloy disk and fine Pd wires. In our previous studies, however, films thicker than 2 mm were not deposited because ofthe configuration ofthe target arrangement, in which alloy composition was adjusted by using Pd wires, which became thinner rather rapidly. Hence, controlling film composition was not easy, especially, when thick films were to be produced. To overcome this problem, we have developed a sputter deposition apparatus with dual dc-magnetron cath- odes, which allows us to deposit thicker films under independently controlling incident Fe and Pd atoms onto substrates. The primary purposes ofthe present study are to investigate some basic knowledge ofthe fabrication ofFe–Pd ferromagnetic SM alloy thin films by the developed system and to characterize their SM behavior.
Show more

7 Read more

Hybrid HIPIMS and DC magnetron sputtering deposition of TiN coatings: Deposition rate, structure and tribological properties

Hybrid HIPIMS and DC magnetron sputtering deposition of TiN coatings: Deposition rate, structure and tribological properties

Figure 7 shows XTEM observation and SAD analysis of the 3DC+HIPIMS TiN. Similar to the 4DC magnetron sputtered TiN as shown in Figure 6, the coating shows a layered structure comprising an intermixing layer, a metallic Ti interlayer, and the polycrystalline columnar TiN coating. The entire section of the coating was found to be void-free. The ion-etching induced intermixing layer between the Ti layer and the steel substrate shows sharp dark contrast to the adjacent Ti and substrate. The interface between the TiN and Ti can be easily recognized. The TiN coating has also experienced an evolution from fine columnar grains in the initial growth (Figure 7a) to gradually coarse columns having well-defined boundaries (Figure 7b). However, the lower part of the TiN coating is obviously different from the 4DC magnetron sputtered TiN by showing clearly defined grain boundaries in the nanoscale granular structure, Figure 7a. In Figure 7c, the hybrid TiN coating shows a strong (220) texture as evidenced by the much stronger {220} diffraction than other diffractions at the coating growth direction.
Show more

12 Read more

Balzers Sputter Coater SCD 050

Balzers Sputter Coater SCD 050

The SCD 050 is a bench top, sputter deposition system designed for thin films on substrates up to 6 inches. Morphology and thickness is user controlled using power, pressure, working distance, and a Syscon Instruments STM-100/MF thin film monitor. Thickness can be time controlled or crystal monitor controlled. A complete process takes about a half hour. It is also capable of cathode etching.

8 Read more

Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

flow rate, figure 6a, and became faceted (figure 6b to e) as the flow rate increased. Similar dependency of microstructure on nitrogen flow rate of CrNx coatings has been reported by G. Greczynski et. al. when pure HIPIMS along with a high pulsed bias voltage of -150V was used. 21 However the authors report that, for the same pulse energy, above a critical nitrogen content in the films (33 at.%) transition from a column free, nano-sized grain structure into more obvious columnar grain structure takes place. Thus in the current set of results the columnar structure observed for all the coatings, irrespective to the nitrogen content in the film, can be largely accounted to the UBM flux. As clearly evident from the images, the deposition rate changed significantly as the N 2
Show more

26 Read more

Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

Target poisoning during CrN deposition by mixed high power impulse magnetron sputtering and unbalanced magnetron sputtering technique

Current work focuses on target poisoning studies on a chromium (Cr) target in a combined argon and nitrogen atmosphere when operated in HIPIMS and will add to the knowledge base of target poisoning phenomenon in HIPIMS. It has been shown that HIPIMS itself can be used as a coating deposition technology 13 or as a tool (in combi- nation with other techniques) to ionize plasma which other- wise is depleted of energetic flux, e.g., DC sputtering. 14 For example, when combined with DC-unbalanced magnetron sputtering (referred henceforth as UBM), HIPIMS can address some of the issues of deposition rates and can give a greater control over the properties of magnetron sputtered coatings. 15,16 Eventually combining HIPIMS with UBM fur- ther makes things complex but interesting from target poi- soning point of view. Thus, this work also investigates the
Show more

9 Read more

Decorative vacuum coating technologies Certottica Longarone. Thin Film Plasma Coating Technologies

Decorative vacuum coating technologies Certottica Longarone. Thin Film Plasma Coating Technologies

High Plasma Impuls Magnetron Sputtering Deposition of tribological and hard coatings. Magnetron sputter plasma for the deposition of optical thin films[r]

39 Read more

Electrical Characteristics of Doped ZnO/Cu2O Heterojunction Diode by Sputtering Method

Electrical Characteristics of Doped ZnO/Cu2O Heterojunction Diode by Sputtering Method

Aluminium and Gallium. Al doped ZnO films deposited using magnetron sputter at lower temperature shows a good characteristic. While Ga doped ZnO is high oxidation resistance during deposition, exhibit better electronics stability in humidity and also suitable for stabilization of ZnO lattice system (Pugalenthi et al., 2015; Gorrie et al., 2010; Park, 2006; Yu et al., 2005; Fathollahi & Amini, 2001; Zhang et al., 1999; Park et al., 1999).

6 Read more

High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application

High Quality GeSn Layer with Sn Composition up to 7% Grown by Low Temperature Magnetron Sputtering for Optoelectronic Application

Recently, GeSn alloys have the capability to become a direct bandgap material at an certain Sn composition of around 6%-10% [1-3] , making it a possible candidate as the optical gain medium in group IV light source [4-6] . Besides, GeSn is also a complementary metal-oxide-semiconductor (CMOS) compatible optoelectronic material for Si photonics, which makes it more attractive. The epitaxial growth of high Sn composition GeSn with high material quality is challenging due to the solid solubility of Sn in Ge or Ge in Sn is less than 1%, and the smaller surface free energy of Sn than that of Ge makes Sn more likely immigrates to the surface of the GeSn film during epitaxial growth and thermal treatment [7-11] . So far, several techniques, such as CVD [12-14] , MBE [15-17] , and magnetron sputtering [18-22] have been employed to achieve the crystalline GeSn layers.
Show more

14 Read more

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Deposition of c-axis orientation aluminum nitride films on flexible polymer substrates by reactive direct-current magnetron sputtering

Fig. 3 shows SEM micrographs of the cross-sectional structure of the AlN films deposited on polymer substrate at different deposition pressures, and Fig. 4 shows the AFM images. Each AlN film exhibits a typical (002) oriented columnar structure. The surface of the film deposited at 0.38 Pa is smoother than the other two films, and the columns are more neatly arranged and compact. The mounds in Fig. 3(a) may caused by the tiny dust, since the experiments are not done in clean room. As the pressure increased, the surface became rougher and the structure became much coarser and non-columnar, consistent with the XRD-result. This phenomenon can be explained by considering the scattering events and adatom mobility. At high deposition pressure, the probability of scattering increases and more particles lose their kinetic energy via collisions, resulting in lower adatom surface mobility. Generally, higher adatom mobility promotes the growth of the AlN thin film with a c-axis orientation, because if the particles have higher mobility they are more likely to find the low energy binding sites which leads to crystal growth. Furthermore, at high deposition pressure, the tendency for film bombardment by particles at an oblique angle increases due to scattering, resulting in low film density.
Show more

19 Read more

Deposition of nanoscale multilayer CrN/NbN physical vapor deposition coatings by high power impulse magnetron sputtering

Deposition of nanoscale multilayer CrN/NbN physical vapor deposition coatings by high power impulse magnetron sputtering

The HIPIMS and conventional dc plasma composition was investigated in a Kurt J Lesker CMS-18 sputtering machine equipped with 3-inch cathodes. An energy-resolved mass spectrometer (Hiden Analytical) was utilised to investigate the relative percentages of reactive gas (Nitrogen), Argon and Cr metal ions in the plasma. All measurements were carried out in a time-averaged manner. More details of the setup are given in Ehiasarian et al [17]. The plasma conditions were as close as possible to the ones used in the Hauzer HTC- 1000/ABS coater during deposition. The cathodes had identical magnetic field strength, and the discharge was operated at the same current density, total pressure, and Nitrogen partial pressure as the ones used during deposition.
Show more

26 Read more

Apatite Formation on Rutile TiO<sub>2</sub> Film Deposited Using Dual Cathode DC Unbalanced Magnetron Sputtering

Apatite Formation on Rutile TiO<sub>2</sub> Film Deposited Using Dual Cathode DC Unbalanced Magnetron Sputtering

the rutile phase is suitable for biomaterials application. Normally, the rutile can be synthesized using thermal treatment of anatase phase at above 600  C, which causes some thermal stress inside. Recently, we reports that the rutile can be synthesized in low temperature using dual cathode DC unbalanced magnetron sputtering with various the external bias voltage to the substrates (V sb ). The rutile plane (110) changed to

8 Read more

An Energy Star Physical Vapor Deposition (PVD) Machine

An Energy Star Physical Vapor Deposition (PVD) Machine

Physical Vapor Deposition (PVD) Technique is one of the most favourable techniques to deposit thin films in the range of Nano scale. However, the current PVD setup in the market has several deficiencies. The normal size of the PVD is relatively large and this will require larger parts and devices to build the system that contributes to a larger space to locate the equipment. The target used (i.e. The source of the atom to be deposited as a thin film) in the conventional method is normally in the solid form. Target of ceramic, a combination of more than one element, inorganic or powders could not be sputtered using the conventional method due to the unsupportive design of PVD. The conventional PVD for lab-scale usage could be improved by the innovative design of magnetron sputtering that utilizes the concentration of electrons to enhance the plasma ionization. The design highlights the arrangement of magnets to capture and entrap electrons for better ionization rate. This knowledge is transferred to ULVAC (M) Sdn Bhd to be embedded into the conventional lab-scale PVD to enable the sputter of powders. Since sputtering the powder and its mixture is relatively easier and efficient in this PVD system, the technology will enhance innovative and creative formulation of various thin film depositions for different properties. This innovative technology is seen to address issues of industrial related community
Show more

8 Read more

Plasma diagnostics focused on new magnetron sputtering devices for thin film deposition

Plasma diagnostics focused on new magnetron sputtering devices for thin film deposition

get, which was problematic with evaporation since the deposition rate of the alloy constituent depends on their individual vapour pressures. In the reactive regime, oxides and nitrides can be sputtered too. Sputtering is done from an extended area target and not from a point source as in evaporation which is another reason for the success of PVD keeping global film uniformity from properly designed mag- netrons. Since PVD utilises non-toxic targets and low pressure of inert gas, PVD satisfies increasing environmental demands about the use of hazardous materials. In this chapter, a general overview of basic physical principles of sputtering is given. A possibility to increase process efficiency by using a magnetron con- figuration will be shown. Sputtering is predominantly a neutral emission pro- cess. Ionizing the sputtered particle flux makes possible to form films under new physical conditions, such as enhanced ion assisted grown of films and deposition directionality. Sputtered particle flux can be ionized by a secondary plasma lo- cated between the magnetron target and the substrate of directly by a magnetized plasma operated in high power pulsed regime. Both so called IPVD processes are explained without great details. The following interesting book [2] and these great review articles [3] and [4] have been used as a very helpful base for this chapter.
Show more

144 Read more

←
				
											Return to Article Details
									
				MOLYBDENUM TRIOXIDE THIN FILMS DOPED WITH GOLD NANOPARTICLES GROWN BY A SEQUENTIAL METHODOLOGY: PHOTOCHEMICAL METAL-ORGANIC DEPOSITION (PMOD) AND DC-MAGNETRON SPUTTERING

← Return to Article Details MOLYBDENUM TRIOXIDE THIN FILMS DOPED WITH GOLD NANOPARTICLES GROWN BY A SEQUENTIAL METHODOLOGY: PHOTOCHEMICAL METAL-ORGANIC DEPOSITION (PMOD) AND DC-MAGNETRON SPUTTERING

used. The equipment used was a Shimadzu UV-2450 spectrophotometer with an integrating sphere ISR-2200 and controlled by the UVProbe software version 1.10. First, the diffuse reflectance of the samples was measured; then, via the Kubelka-Munk mathematical transformation, all absorbances were obtained. Scanning electron microscopy (SEM) images were obtained on a LEO 1420VP at an accelerating voltage of 25 kV and coupled to an energy dispersive analysis instrument, Oxford 7424 model. For FE-SEM images a Leo Zeiss Supra 35-VP model was used with accelerating voltages of 15 kV and 2 kV. Samples were prepared by coating the molybdenum trioxide thin films with Au nanoparticles through the sputtering method with deposition times of 1, 2, 3, 4, 5 and 20 s. The total count of Au nanoparticles on the oxide was evaluated using SEM images. A histogram was built with the Origin 8 software with a Gaussian fit analysis. Mathematical treatments of the average sizes with standard deviations were calculated by this program.
Show more

5 Read more

Single step deposition method for nearly stoichiometric CuInSe2 thin films

Single step deposition method for nearly stoichiometric CuInSe2 thin films

Copper indium diselenide (CIS) is one of the most promising materials for high efficiency thin film photovoltaic devices. Its high absorption coefficient, low toxicity, and electrical and optical properties make this compound a major candidate for the next generation of solar cells. Because of this high potential, researchers have developed a variety of techniques to deposit CIS thin films such as flash evaporation [1] [2], co-evaporation [3], sputtering[4] [5], molecular beam epitaxy [6], spray pyrolysis [7] [8], chemical vapour deposition [9] , etc. Many of these require a potentially dangerous post selenization process [10-12]. The use of H 2 Se during selenization requires extensive health and safety measures and can introduce
Show more

27 Read more

Zinc oxide nanocomposites with antitumor activity

Zinc oxide nanocomposites with antitumor activity

The substrate material temperature was measured de- pending on the changes of the magnetron source operat- ing current at various target-to-substrate distances (Fig- ure 1(а)). It follows from this dependence that within the investigated range of operating currents from 80 mA to 500 mA, the substrate surface temperature was below 100˚С. At such temperatures, there were no undesirable extraneous transformations of the surface of biologically active substances S1 and S2. X-ray investigations were carried out and experimental results on antitumor active- ity were obtained for ZnO compositions formed at vari- ous technological regimes of ZnO deposition on the re- searched biologically active compounds. It was revealed that the structure of 100 nm thick ZnO nanofilms with optimum size of nanoparticles (15-30 nm) is appropriate for interaction with the researched biologically active compounds in form of both coatings and composite films. Such nanosize ZnO films were obtained at the following technological regimes: operating current from 400 mA, operating voltage 240 V and operating pressure 10 -2 mm
Show more

8 Read more

Characterization of Ferroelectric NaxK1 xNbO3 System Films Prepared by Pulsed Laser Deposition

Characterization of Ferroelectric NaxK1 xNbO3 System Films Prepared by Pulsed Laser Deposition

Pulsed laser deposition has been widely applied for preparation of many kinds of thin films due to several advantages, i.e., stoichiometric transfer of compositions from source to film, growth from a high energy beam resulting in high crystallinity and inherent simplicity for the growth of multilayered structures. 17) Na

6 Read more

Show all 4025 documents...