Metal oxide semiconductors - Materials
Structural, Optical, and Photoelectrochemical Properties of Novel Metal Oxide Semiconductors.
... These metal oxides are examples of n-type semiconductors and are typically used as photoanodes in PEC cells, or for transport of electrons in DSSCs and PV ...n-type semiconductors are also wide band ...
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Zinc Oxide based Diluted Magnetic Semiconductors
... synthesized materials known as diluted magnetic semiconductors (DMS) as epitaxial thin film structures using the process of pulsed laser deposition ...These materials are envisioned to be of ...
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Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits.
... transition metal cations with electronic structure (n-1)d 10 ns 0 would have high electron mobility even in the amorphous ...amorphous oxide semiconductors have been investigated, including amorphous ...
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Solution processed metal oxide dielectrics and semiconductors for thin film transistor applications
... the metal oxides are the transparent conductive oxides ...tin oxide (FTO) has been used for energy efficient windows, due to their low radiative heat loss because of their low thermal emittance ...tin ...
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Development of deep submicron CMOS process for fabrication of high performance 0.25 nm transistors
... conduction. Traditionally, the wafers are heated to high temperature in a furnace tube and allowed to soak in a nitrogen ambient. A furnace tube will take on the order of 20 minutes to ramp up to 1000°C or higher. The ...
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Modeling, Simulation and Fabrication of 100 nm (Leff) High Performance CMOS Transistors
... gate oxide breakdown and also to avoid short channel effects like DIBL, sub-threshold slope, channel length modulation and punch- ...operation, oxide capacitance and channel depletion ...
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Bio functionalised solids delivering bioactive nitric oxide gas for therapeutic applications
... diazeniumdiolates in NO delivery, it is the first to incorporate amines into MOF, such as through the pyridyl-N of 4-(methylamino)-pyridine (4-map) to coordinate with the Cu site in HKUST-1 using vapor-phase diffusion ...
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Metal-Insulator Transition in Three-Dimensional Semiconductors
... a metal-insulator transition in three-dimensional semiconductors due to doping and find a conventional phase transition, where the effective scattering rate is the order ...
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Flux-Mediated Syntheses and Structural Characterization of Cu(I)-M(V) (M = Nb, Ta) Oxide Semiconductors.
... ray spot size on the sample had a 2-3 mm diameter. The energy resolution for the survey scan was ~2 eV and for the detail scan was ~1 eV. Energy scales were calibrated by assigning adventitious carbon peaks at 284.5 eV. ...
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Introducing a New Method of Nanowire Synthesis Yingbin Cong
... and oxide nanoscale wires based on the bottom-up, self-assembly process by employing different ...as oxide-assisted CVD, chemical solution techniques and metal-catalyzed MBE and ...and oxide ...
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Electrical And Structural Study Of Metal Based Nano Material: Iron Nickel Oxide (Nano-Fe2O3.Nio)
... conducted on a Philips Analytical XPERT-3 diffractometer using a Cu Kα radiation (λ = 1.54056 A°) with a MINIPROP detector and operating at 40 kV and 30 mA. X-ray diffraction patterns were recorded between 2θ = 5◦ and ...
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Tin Oxide Nanoparticles Produced by Spark Ablation: Synthesis and Gas Sensing Properties
... The phase composition of produced materials was retrieved from X-ray diffraction (XRD) spectra measured with Bruker D8 DISCOVER. The particle size distribution was determined from transmission electron microscopy ...
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Optical and electronic properties of defects and dopants in oxide semiconductors
... semiconductor materials, sample preparation is the key step in TEM mea- ...semiconductor materials must be of the order of a few hundred nanometres when placed in a TEM in order to allow for sufficient ...
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Electronic structure study of defects and impurities in oxide semiconductors
... All material supplied by Trinity College Library is protected by copyright (under the Copyright and Related Rights Act, 2000 as amended) and other relevant Intellectual Property Rights. By accessing and using a Digitised ...
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A calculation of the structure and energy of the Nb/Al2O3 interface
... The interaction between the metal and the oxide combines the short range interaction between the metal atoms and the oxide ions, the Coulomb interaction between [r] ...
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Electrochemical Behavior of Fe-Ni Alloys as an Inert Anode for Aluminum Electrolysis
... Antipov et al. [18] measured the electrochemical behavior of Ni-based anodes during galvanostatic electrolysis at 850-950 ℃ . Cassayre et al. [16] studied the oxidation of Ni-Cu alloys under anodic polarization at 970 ℃. ...
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Al3+ doped Fe3O4 Nanoparticles: A Novel Preparation Method, Structural, Magnetic and Electrochemical Characterizations
... with metal ions [41], and fabricating new nanostructures [42-45] have been ...strategies, metal ion doping has been rarely ...of metal ion (Al 3+ ) doped magnetite nanoparticles (Al-MNPs) based on ...
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Direct Formation of Reduced Graphene Oxide and Graphene Quantum dot Composites by Using Ascorbic Acid as High- Performance Binder-Free Supercapacitor Electrodes
... supercapacitor materials and other energy-storage ...electrode materials provides a new pathway to design and synthesis high-performance supercapacitors ...
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NEW PATENTS: April 197984-88
... The metal substrate may be coated with a first layer of refractory oxide, which may be a lanthanide metal oxide, and a second layer of catalytically active metal chosen from[r] ...
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Heavy Metal Sorption Behaviour of Suspended Materials Kaolinite and Iron Oxide (Goethite)
... the metal associated with the test material was measured by FAAS; between each reading, the instrument was zeroed with a metal-free solution containing ...
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