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nitride semiconductor thin films

The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

The scanning electron microscope as a flexible tool for investigating the properties of UV-emitting nitride semiconductor thin films

... [11,24,40]. Nitride semiconductors contain three types of TDs, namely screw-, edge-, and mixed-type ...For nitride semiconductor thin films, sur- face relaxation has a major impact on ...

10

Electrical properties of copper nitride thin film prepared by reactive DC sputtering

Electrical properties of copper nitride thin film prepared by reactive DC sputtering

... copper nitride films by changing the content of nitrogen gas at various sputtering ...copper nitride is a semiconductor with a small indirect band ...copper nitride is a better ...

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High resolution X-ray Diffraction Characterization of III-Nitride Semiconductors: Bulk Crystals and Thin Films.

High resolution X-ray Diffraction Characterization of III-Nitride Semiconductors: Bulk Crystals and Thin Films.

... Group III-nitrides are among the most fascinating and technologically relevant materials systems of our time. Comprised of AlN, GaN, InN and their alloys, this remarkable family of semiconductors presently constitutes ...

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Growth Optimization and Characterization of Reactively Sputtered Zirconium Nitride Thin Films for III-V Buffer Layer Applications

Growth Optimization and Characterization of Reactively Sputtered Zirconium Nitride Thin Films for III-V Buffer Layer Applications

... Gallium nitride (GaN) was first reported by Johnson et ...“Gallic nitride” 20 . Gallium nitride is member of the III-V semi-conductors family that consists of three commercially valuable materials ...

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Pulsed DC reactive magnetron sputtering of aluminum nitride thin films

Pulsed DC reactive magnetron sputtering of aluminum nitride thin films

... Pulsed plasma processing has found increasing acceptance over last decades, particularly for the surface treatment of materials used in data storage, flat panel, semiconductor and other industrial applications. ...

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Development of Zn-IV-Nitride Semiconductor Materials and Devices

Development of Zn-IV-Nitride Semiconductor Materials and Devices

... co-sputtering and molecular beam epitaxy, the structural and optoelectronic charac- terization and the solid-state and photoelectrochemical devices produced from the thin films. Initial fabrication was ...

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A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films

A Theoretical Study on Van Der Pauw Measurement Values of Inhomogeneous Compound Semiconductor Thin Films

... compound semiconductor thin films on the electrical properties obtained by the van der Pauw method were investigated by simulation using the ...compound semiconductor thin films ...

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SYNTHESIS AND CHARACTERIZATION OF Fe-Ni-Co MAGNETIC THIN FILMS AT DIFFERENT BATH TEMPERATURE

SYNTHESIS AND CHARACTERIZATION OF Fe-Ni-Co MAGNETIC THIN FILMS AT DIFFERENT BATH TEMPERATURE

... The working conditions and bath composition of Fe-Ni-Co alloy thin film are shown in Table 1.The Fe-Ni-Co thin films are successfully coated by electrodeposition method. In this investigation, Copper ...

8

Aluminum nitride films by reactive sputtering

Aluminum nitride films by reactive sputtering

... N2 Composition Figure 3-3 Affect of annealing on thickness 51 Figure 3-4 Affect of annealing on refractive index 52 Figure 3-5 Capacitance as a function of plate area 52 Figure 3-6 Optic[r] ...

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Volume 8 | Issue 4 - 2018

Volume 8 | Issue 4 - 2018

... The thin films were annealed at (573 K) for (2 ...the thin films was measured using optical thin film measurement (LIMF- ...of thin films with silicon substrate were ...

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Effects of PBr3 Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

Effects of PBr3 Addition to Polysilane Thin Films on Structures and Photovoltaic Properties

... organic semiconductor based solar cell are potential next generation solar ...Organic thin film solar cells are economical to pro- duce, flexible and light weight, and their photovoltaic and optical ...

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The microstructure and properties of unbalanced magnetron sputtered CrN[x] coatings

The microstructure and properties of unbalanced magnetron sputtered CrN[x] coatings

... of impinging ions also positively influenced surface roughness and corrosion resistance. All the results show that the coating properties seem to improve with increasing presence of reactive gas during the deposition ...

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Detailed Analysis of Five Aspects Addressed to Minimize Costs and Waste in the Chemical Bath Deposition of CdS Films Using the CdB–AC6H5O7–AOH–(NH2)2CS System

Detailed Analysis of Five Aspects Addressed to Minimize Costs and Waste in the Chemical Bath Deposition of CdS Films Using the CdB–AC6H5O7–AOH–(NH2)2CS System

... deposited semiconductor thin films [84], a model that was used to study the thin film yield as a function of the separation among substrates in batch production, and they established that ...

20

ABSTRACTS: April 197868-73

ABSTRACTS: April 197868-73

... The Effect of Silver Interdiffusion on the Catalytic Activity of Thin Platinum and Palladium Films in the Reduction of Ag,S Films.. ABERMANN, Thin solid Films,.[r] ...

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Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

Annealing Effect of DC-RF Coupled Co-sputtered Boron-Aluminium Nitride Thin Films

... Aluminium Nitride (AlN) thin film ((B, Al)N) was synthesized by DC-RF coupled co-sputtering and post processed for three different annealing ...AlN thin film at 400 °C than other ...

5

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

Nanoscale Visualization of Elastic Inhomogeneities at TiN Coatings Using Ultrasonic Force Microscopy

... and 5. Figure 4a, b were simultaneously recorded over a (5 9 5) lm 2 surface area. In Fig. 4a the TiN surface exhibits a protruding droplet (indicated by the arrow) sur- rounded by a topographically smooth and sinking ...

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I - Vt and C – V Characteristics of n - GaN – Metal Contact Devices

I - Vt and C – V Characteristics of n - GaN – Metal Contact Devices

... modern semiconductor and vacuum technology has been employed to fabricate reproducible metal-semiconductor contacts so that it is now possible to obtain both rectifying and nonrectifying ...

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Epitaxial Growth of Room Temperature Ferrimagnetic Semiconductor Thin Films Based on Fe3O4 Fe2TiO4 Solid Solution

Epitaxial Growth of Room Temperature Ferrimagnetic Semiconductor Thin Films Based on Fe3O4 Fe2TiO4 Solid Solution

... solution thin film exhibits ferrimagnetism with Curie temperature above room temperature and is a semiconductor with n-type conduction ...solution thin films, implying the presence of spin-polarized ...

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Metal-insulator-semiconductor-insulator-metal structure of TiO2/SiO2 Thin Films for Ultraviolet (UV) Photodetectors

Metal-insulator-semiconductor-insulator-metal structure of TiO2/SiO2 Thin Films for Ultraviolet (UV) Photodetectors

... A/W were presented by Kong et al. It was higher than those of other wide band gap UV detectors with a MSM structure [19]. Nevertheless, the responsivity of these PDs could be not reached our prospect because the ...

8

Impact of nanostructured thin ZnO film in ultraviolet protection

Impact of nanostructured thin ZnO film in ultraviolet protection

... pure thin ZnO films on UV protection, several samples were prepared using a dip-coating ...the thin films were compared before and after UV ...the thin ZnO and IZO films annealed ...

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