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P-n-p heterojunction bipolar transistors

Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

Temperature dependence of breakdown and avalanche multiplication in In0.53Ga0.47As diodes and heterojunction bipolar transistors

... the p-i-n diodes in this work has been reported by Ng et ...the p-i-n diodes were normalized to the single value of photocurrent at a bias of 2 V (chosen to ensure full ...the ...

7

Design, characterisation, and numerical simulation of double heterojunction bipolar transistors for microwave power applications

Design, characterisation, and numerical simulation of double heterojunction bipolar transistors for microwave power applications

... with a doping spike design (see the text). (iii) Inserting a doping spike between the base and collector: Heavily doping a thin portion o f the wide bandgap collector layer adjacent to the base has two effects: first, it ...

327

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

... Abstract—SiGe heterojunction bipolar transistors (HBTs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p + ...

8

Optoelectronic mixing in heterojunction bipolar transistors

Optoelectronic mixing in heterojunction bipolar transistors

... It was mentioned in Section l-3b that the HBT, configured as an up-converting optoelectronic mixer, can be applicable in micro wave/millimetre-wave fibre-radio systems. Suematsu et al. [73,74] have used a GaAs/AlGaAs HBT ...

231

N,N′ Bis(ethyl­di­phenyl­phosphino)ethyl­enedi­amine P,P′ dioxide

N,N′ Bis(ethyl­di­phenyl­phosphino)ethyl­enedi­amine P,P′ dioxide

... shorter than the normally accepted value for a single P III —N bond (1.77 A ˚ ; Cruickshank, 1964). The value in (I) is closer to those typically found for the PN bonds in cyclic phospha- ...

7

Reduced plasma orexin-A levels in patients with bipolar disorder

<p>Reduced plasma orexin-A levels in patients with bipolar disorder</p>

... After adjusting for age, sex, and smoking status, mean orexin-A levels were signi fi cantly different across the four diagnostic groups (F=4.09; df=3; p=0.007, η 2 =0.06) (Table 1). When each diagnostic group was ...

10

Synthesis and characterization of ruthenium complexes with (N N)(P P) and (N P)2 donor sets

Synthesis and characterization of ruthenium complexes with (N N)(P P) and (N P)2 donor sets

... replaced by an alkynyl groups in each complex. As expected, the bond lengths of the Ru-C bonds are smaller than those of Ru-Cl bonds. Generally, most of the structural details follow the same trend as those of the ...

257

Low Cost Fabrication Of EU: CdS/PbS Heterostructures

Low Cost Fabrication Of EU: CdS/PbS Heterostructures

... The n type CdS with different doping level of Europium and p type PbS heterojunction solar cell was fabricated using Chemica l Bath ...the pn ...CdS/PbS heterojunction cells ...

6

Fabrication of novel transparent Co3O4 TiO2 nanowires p n heterojunction diodes for multiband photodetection applications

Fabrication of novel transparent Co3O4 TiO2 nanowires p n heterojunction diodes for multiband photodetection applications

... deposition (GLAD) technique. The p-n heterojunction showed excellent rectification ratio of 2.26× 10 2 at ± 3.4 V. The forward turn on voltage of 1.5 V in the dark was reduced to 1 V under white ...

20

QT and P-wave dispersion during the manic phase of bipolar disorder

<p>QT and P-wave dispersion during the manic phase of bipolar disorder</p>

... Bipolar disorder (BD) is a serious mental disorder characterized by recurrent attacks and high morbidity and mortality. There are three main phases that de fi ne the course of BP: depression, mania, and hypomania. ...

7

Characterization of photovoltaics with In2S3 nanoflakes/p Si heterojunction

Characterization of photovoltaics with In2S3 nanoflakes/p Si heterojunction

... p-Si substrate exhibit a rough surface. The EDS line pro- files indicate that the film consists of indium and sulfur. The atomic concentrations of In = 56.6% and S = 43.4% are calculated from the EDS spectrum, as ...

7

Sequentially Vapor Grown Hybrid Perovskite for Planar Heterojunction Solar Cells

Sequentially Vapor Grown Hybrid Perovskite for Planar Heterojunction Solar Cells

... fabricated n-i-p -type planar heterojunction perovskite solar cells is given together with the representative J-V curves for five different perovskite thicknesses in ...

6

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells

... The crystal structures of the samples were characterized by XRD. The XRD pattern of the CdS film is illustrated in Figure 3a. Only the (111) diffraction peak, appearing at 26.2°, belongs to cubic CdS; the others, located ...

6

Carrier Dynamics of p n Heterojunction Organic Photovoltaic Cells Analyzed by a Novel Graphic Representation of Impedance Spectroscopy

Carrier Dynamics of p n Heterojunction Organic Photovoltaic Cells Analyzed by a Novel Graphic Representation of Impedance Spectroscopy

... of p-n heterostructured OPV, which separates specific functionalities to discrete layers, are complex components of each ...conventional p-n junction theory, negative bias voltage places the ...

10

All-GaN Integrated Cascode Heterojunction Field Effect Transistors

All-GaN Integrated Cascode Heterojunction Field Effect Transistors

... Abstract — All-GaN integrated cascode heterojunction field effect transistors were designed and fabricated for power switching applications. A threshold voltage of +2 V was achieved using a fluorine ...

12

Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications

<p>Transparent Nano Thin-Film Transistors for Medical Sensors, OLED and Display Applications</p>

... For decades, amorphous oxide semiconductor (AOS) thin- fi lm transistors (TFTs) have been widely investigated for numerous sensor applications due to their unique properties, such as transparency and fl exibility. ...

7

Improvement of Photovoltaic Conversion Efficiency and also Photoluminescence Efficiency of p Cu2O/n ZnO thin film heterostructures by Cyanide Treatment

Improvement of Photovoltaic Conversion Efficiency and also Photoluminescence Efficiency of p Cu2O/n ZnO thin film heterostructures by Cyanide Treatment

... This article reports fabrication of p-Cu2O/i-ZnO/n-ZnO thin film heterojunction photovoltaic structures by radio frequency dc magnetron sputtering technique and improvement of its quantu[r] ...

6

The fabrication of white light emitting diodes using the n ZnO/NiO/p GaN heterojunction with enhanced luminescence

The fabrication of white light emitting diodes using the n ZnO/NiO/p GaN heterojunction with enhanced luminescence

... Zinc oxide (ZnO) is very much popular among the re- searchers due its wide direct band gap (3.37 eV) and high exciton binding energy (60 meV) at room tem- perature. The wide band gap and high exciton binding energy ...

6

Piezoelectric Transformers to the Future   Integrated IGBT Gate Drivers

Piezoelectric Transformers to the Future   Integrated IGBT Gate Drivers

... of circuit drive the gate circuit used in the power electronic switches by use of Piezoelectric transformers such as metal oxide semiconductor field-effect transistors (MOSFET) and also for insulated gate ...

6

Comparative Study of Clinical Charecteristics, Course of Illness and Quality of Life Between Patients with Bipolar and
Unipolar Depression.

Comparative Study of Clinical Charecteristics, Course of Illness and Quality of Life Between Patients with Bipolar and Unipolar Depression.

... in bipolar depression, bipolar depressive patients rated their quality of life as very poor and poor, in addition, bipolar depressive patients had dissatisfaction with sexual life and activities of ...

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