p-Si:H films
Pulsed Supermagnetron Plasma CVD of a CNx:H Electron Transport Films for Au/a CNx:H/p Si Photovoltaic Cells
... The refractive index observed at UPRF of 400 W was a little smaller than those observed at UPRFs of 50 - 200 W. This was caused by the sputter deposits from the upper electrode during the discharge off-time. The hardness ...
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Influence of Sputter Deposition Time on the Growth of c Axis Oriented AlN/Si Thin Films for Microelectronic Application
... thin films a promising material for many electronic, optoelectronic, acoustic devices such as surface acoustic wave (SAW) ...AlN films are greatly influ- enced by their ...SiC, Si (111) and Si ...
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Flexible carbon nanotube/mono crystalline Si thin film solar cells
... 48 h to remove amorphous carbon and catalyst ...CNT films were expanded on water surface to form ultrathin films with a thickness of about 50 to 200 nm by adding a few drops of ethanol ...
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Characterization of photovoltaics with In2S3 nanoflakes/p Si heterojunction
... textured p-Si substrate by using wet etch- ing ...the p-Si, which was defined as the anti- reflective structures for incident ...3 films were grown on the surface ...
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Aluminum silicide microparticles transformed from aluminum thin films by hypoeutectic interdiffusion
... of Si to Al of the microparti- cle formed through 9 h annealing ...6 h an- nealing ...the Si solubility in Al crystal is only about ...large Si concentrations reflect solid-state in- ...
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Enhanced Physical Properties Of Indium Tin Oxide Films Grown on Zinc Oxide-Coated Substrates
... thin films as a function of the buffer layer thickness and showed that an increase in the ZnO thickness could improve the properties of the ITO thin films ...thin films are two strategies which are ...
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The Mechanism Of Hole Transport In Photocells Based On A-Si: H
... a-Si: H silicon, cannot adequately satisfy the requirements imposed on semiconductor photovoltaic ...a-Si:H films and solar cells based on it [1-6], and these works revealed that the photoelectric ...
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Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles
... NiSi/Si films and AlSi/Si films is shown in ...the films, their absorption ability is significantly enhanced in the whole visible region (400–800 ...pure Si film, the ...
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Structure and Luminescence Properties of Eu3+ Doped Cubic Mesoporous Silica Thin Films
... The structural evolution of Eu 3? -doped mesoporous silica thin film related to the decomposition of surfactant F127 during heat treatment is studied. The spontaneous organization of silica–surfactant mesophases ...
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Structural and Electrical Characterization of GaN Thin Films on Si(100)
... The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. X- ray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the ...
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Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy
... Si 共 111 兲 substrate. Shown are spectra acquired at 130 and 150 eV photon energy. The higher energy shows more substrate signal 共 BE ⬍ 4 eV 兲 due to increased electron escape depth. The lower energy scan shows ...
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Elasticity Study of Nanostructured Al and Al Si(Cu) Films
... about 0:2 GPa for d between 100 and 200 nm, and falls between 0:2 GPa and þ0:2 GPa for d < 100 nm thick. 20) Such strong compressive internal stress in the as deposited state for sputtered films may be associated with ...
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Characterization of Quaternary Chalcogenide As-Ge-Te-Si Thin Films
... At elevated temperatures, energy bonding effects can influence the film composition. This is because more energy is available to the atoms striking a hot substrate and they can adjust themselves after striking to form ...
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Microstructures and Optical Properties of Silicon Spheres for Solar Cells
... of Si spheres and AR films by using suitable starting materials, dopant types and concen- trations, and annealing and deposition conditions, is import- ant for improving the conversion efficiency of ...
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Synthesis and Electrical Characterization of ZrO2 Thin Films on Si(100)
... technique in air at a speed of 3000 rpm for 30 sec on a cleaned Si wafer with an area of 1 cm × 1 cm. Multiple coatings were performed to increase the film thickness for structural characterizations. After the ...
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Formation of Poly Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
... tungsten films deposited on amorphous silicon films on glass sub- strates and formed polycrystalline silicon ...a-Si films not only just beneath the transition metal films but also ...
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The Thickness Effect Of Cuo Thin Films On Structural, Morphological And Optical Properties
... thin films which have been prepared by thermal oxidation with different thicknesses (100,150,200) nm on glass and Si substrates, we made (p-CuO/n-Si) heterojunction was deposited by high ...
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Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition
... films as a function of time at various annealing temperatures. At all temperatures there is a rapid ~, 5 s resolution of RTA technique ! initial reaction followed by a rate which is highly deceleratory. On this ...
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Fabrication of Si heterojunction solar cells using P doped Si nanocrystals embedded in SiNx films as emitters
... homogeneous Si-rich silicon nitride (SRN) films containing phosphorus were deposited by a homemade ECRCVD system on single-side polished p-type (100) single crystalline Si (sc-Si) ...
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Field Electron Emission from a CNx:H Films Formed on Al Films Using Supermagnetron Plasma CVD
... and significantly higher than those of continuous discharge plasma CVD films (below 28 GPa) [27]. This high hardness was obtained by continuous radical deposition and periodic ion bombardment over the films ...
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