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PECVD a-Si:H material

The stability and degradation of PECVD fluoropolymer nanofilms

The stability and degradation of PECVD fluoropolymer nanofilms

... important material with many industrially relevant ...whereby material is pushed aside rather than being plastically compressed or removed as a ...displaced material to re-bond with the remaining ...

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Studies of the self-assembled growth mechanism on nanocrystalline silicon nanodots

Studies of the self-assembled growth mechanism on nanocrystalline silicon nanodots

... important material for use in a-Si solar cells ...as PECVD, as opposed to laser annealing or high temperature CVD processes, in the case of ...

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Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

Low Temperature Growth of Hydrogenated Silicon Prepared by PECVD from Argon Diluted Silane Plasma

... For high quality solar cell applications, materials with high optical absorption, high carrier mobility and low fabrication cost are demanded. Crystalline silicon (C-Si), the most popular electronic ...

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Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films

Gettering of interstitial iron in silicon by plasma enhanced chemical vapour deposited silicon nitride films

... This work has been supported by the Australian Renewable Energy Agency (ARENA) through project RND009. Author C. Sun acknowledges the financial support from Australian Centre for Advanced Photovolatics. The work in the ...

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Surface Characteristics of Silicon Nitride Compounds Deposited on Plasma Nitrided Austenitic Stainless Steels 316L

Surface Characteristics of Silicon Nitride Compounds Deposited on Plasma Nitrided Austenitic Stainless Steels 316L

... For indentation depths higher than 125 nm, the measurements were influenced by the stainless steel bulk material [22, 32-33]. Therefore the real surface hardness value of treated samples must be higher than those ...

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Effects of annealing on the electro optical properties of a Si:H thin films deposited by D C  and pulsed PECVD

Effects of annealing on the electro optical properties of a Si:H thin films deposited by D C and pulsed PECVD

... pulsed PECVD technique with an objective of producing multilayers of nanometer thickness consisting of alternating layers of two materials with different energy gaps using the pulsating voltage applied across two ...

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Evaporation of Phosphorus in Molten Silicon by an Electron Beam Irradiation Method

Evaporation of Phosphorus in Molten Silicon by an Electron Beam Irradiation Method

... Photovoltaic power generation has been an object of intense interest in recent years as one approach to solving environmental and energy problems, and is rapidly gaining popularity as a residential power source. At ...

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Inkjet Printed Thin Film Electrodes for Lithium-Ion Batteries

Inkjet Printed Thin Film Electrodes for Lithium-Ion Batteries

... with PEDOT:PSS binder were the most stable, attributed to its electrical conductivity and reversible deformation upon electrode expansion. The continuous conductive network formed by PEDOT:PSS allows for rapid electron ...

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The Application and Limitations of PECVD for Silicon-based Photonics

The Application and Limitations of PECVD for Silicon-based Photonics

... any material submitted for a degree or diploma at any university and to the best of my knowledge and belief, does not contain any material previously published or written by another person except where due ...

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Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics

Surface reactions during plasma enhanced chemical vapor deposition of silicon and silicon based dielectrics

... surface H abstraction by H radicals (before the reactant zero-point correction) predict a zero activation barrier which is close to, but smaller than the ~2 kcal/mol reported experimentally ...for H ...

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Analysis of Thermoelectric parameters of silver doped NiO nanoparticles

Analysis of Thermoelectric parameters of silver doped NiO nanoparticles

... report the experimental results followed by the mathematical calculations aimed at developing effective thermoelectric materials for high temperature applications. Transition metal oxide materials are the promising ...

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Measurement and Control of In-plane Surface Chemistry at the Si/SiO2 Interface.

Measurement and Control of In-plane Surface Chemistry at the Si/SiO2 Interface.

... response H-terminated Si(111) for p-polarized excitation and ...initially H-terminated Si(111) samples during air ...all Si bonds from the data shown in Figure ...of H-terminated ...

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On the formation of blisters in annealed hydrogenated a Si layers

On the formation of blisters in annealed hydrogenated a Si layers

... different H bonding configurations can be extracted from the stretching and bending ...1 h and annealed for 4 h samples hydrogenated at ...4 h showed that for them the contribution of the ...

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Mechanical Properties of Thermomechanical Treated Hyper Eutectic Al  Si  (Fe,Mn,Cu) Materials

Mechanical Properties of Thermomechanical Treated Hyper Eutectic Al Si (Fe,Mn,Cu) Materials

... treatment, Si crystals and/ or intermetallic compounds were broken into some fragments and dispersed in the aluminum ...large Si crystals or aggregates of compounds, however, gave an origin of fatigue crack ...

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Carbon-coated Si-Cu/graphite Composite as Anode Material for Lithium-ion Batteries

Carbon-coated Si-Cu/graphite Composite as Anode Material for Lithium-ion Batteries

... the Si/graphite, Si-Cu/graphite and carbon- coated Si-Cu/graphite composites, ...of Si (JCPDS file 27-1402), 2 = ...of Si and Cu 5 Si located at 2θ = ...

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1 Room-Temperature H 2Gas Sensing Characterization

1 Room-Temperature H 2Gas Sensing Characterization

... porous silicon (G-doped/p-Si) substrate are investigated utilizing graphene as a catalyst material.. 56.[r] ...

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Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

Complete characterization by Raman spectroscopy of the structural properties of thin hydrogenated diamond-like carbon films exposed to rapid thermal annealing

... Based on correlations drawn in the literature, 1 an empir- ical conclusion would be that loss of sp 3 content by anneal- ing readily translates into reduced mass density of DLC:H films. We have reported in Sec. V that it ...

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Resolvin D1 prevents epithelial-mesenchymal transition and reduces the stemness features of hepatocellular carcinoma by inhibiting paracrine of cancer-associated fibroblast-derived COMP

Resolvin D1 prevents epithelial-mesenchymal transition and reduces the stemness features of hepatocellular carcinoma by inhibiting paracrine of cancer-associated fibroblast-derived COMP

... 24 h, cultured the cells in serum-starved medium for 48 h and collected the CM to evaluate the secretion of COMP by ...24 h effectively reduced the transcriptional levels of collagen 1α1, collagen ...

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In situ growth and coalescence of He filled bi dimensional defects in Si by H supply

In situ growth and coalescence of He filled bi dimensional defects in Si by H supply

... Light ion implantation in semiconductors is known to generate, under specific conditions of implantation/annealing, cracks lying parallel to the surface that is used to split the semiconductor and thus to transfer single ...

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Influences of H on the Adsorption of a Single Ag Atom on Si(111) 7 × 7 Surface

Influences of H on the Adsorption of a Single Ag Atom on Si(111) 7 × 7 Surface

... the H-terminated Si(111)-1 9 1 surfaces and diffusion of Ag on the H-terminated Si(111)-1 9 1 and clear Si(111)-1 9 1 surfaces have been studied experimentally and theoretically ...of ...

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