quantum well semiconductor laser
Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... in quantum well numbers more than a limited number in semiconductor lasers with p-n junction (laser diodes) leads to some undesirable results such as optical power reduction and rise in ...
6
Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
6
Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p i n Laser Heterostructures
... wavelength semiconductor laser struc- tures, containing quantum dot layers (QDs), were investigated by means of tem- perature dependent current-voltage and electroluminescence measurements over ...
10
One-dimensional rarefactive solitons in electron-hole semiconductor plasmas
... Modern semiconductor quantum devices, such as spintronics, nanotubes, quantum dots and quantum wells [1, 2], work with electrons and holes at nanometer scales ...intense laser pulses ...
12
Polariton condensation in a strain-compensated planar microcavity with InGaAs quantum wells
... anti-nodes of the field as well as two additional QWs at the first and last nodes to serve as carrier collection wells, as shown in Fig. 1(c). The large number of QWs was chosen to increase the Rabi splitting and ...
5
Investigation of narrow band semiconductor quantum well structures using a synchronously pumped optical parametric oscillator
... The reflection feature seen in figure 5.4a is common to many spin-decay mea- surements on the MSQW sample. The apparent double response, separated by approximately 6ps, is believed to be due to a reflection off a surface ...
164
Properties of Buried Heterostructure Single Quantum Well (Al,Ga)As Lasers
... Abstract Unlike conventional semiconductor lasers, single quantum well SQW lasers with high reflectivity end facet coatings have dramatically reduced threshold currents as a result of th[r] ...
170
Implication of Quantum Chemical Methods in Future Storage Devices-Molecular Quantum Dot Cellular Automata
... For understanding the working mechanism of a QCA, each quantum level of the electron must be studied. According to De-Brolgie concept, both light and matter show wave-like and particle like characteristics. When ...
8
Laser testing of integrated circuits
... Optical Illumination of a semiconductor The light source Characteristics of the laser Production of the laser probe Laser probing of a silicon integrated circuit Light beam modulation Th[r] ...
236
Quantum transport in semiconductor nanostructures
... coherent electron focusing expenment59 In that section we restncted ourselves to weak magnetic fields Here we discuss the expenment by van Wees et al ,426 which shows how in the QHE regi[r] ...
228
A THEORETICAL EVALUATION OF EIGENVALUES AS A FUNCTION OF APPLIED BIAS VOLTAGE OF TWO QDS WHEN THEY ARE TUNED INTO EXACT RESONANCE WITH ONE ANOTHER
... studied spectra in two cases (a) when obtained spectral signature could be due to two different single exciton transitions of the same quantum dot (b) by two different QDs one weakly and one strongly coupled to ...
14
A THEORETICAL STUDY OF MUTUAL COUPLING OF TWO SEMICONDUCTOR QUANTUM DOTS AND EVALUATION OF ITS PARAMETER
... exploit quantum optical non-linear ties 24,25 ...all-optical quantum networks, when quantum memory elements are coupled via single light ...separated quantum emitters via the electromagnetic ...
13
Re-crystallization of metallized silicon wafer with copper film by Q-switched Nd : YAG laser
... after laser annealing with different number of laser pulses of (b) 1 pulse (c) 2 pulses (d) 3 pulses , (e) 4 pulses, (f) 5 pulses, (g) 6 pulses, (h) 7 pulses, (i) 8 pulses, (j) 9 pulses, (k) 10 pulses, and ...
23
Structural Analysis of InGaAs Based Vertical Cavity Surface-Emitting Quantum Well Laser
... InGaAlAs quantum-well (QW) active material system on an InP ...these laser diodes. Especially the gain characteristics as well as temperature characteristics of such lasers are poor ...
6
Quantum transport in semiconductor-superconductor microjunctions
... Fig l S Conductance of a fork junction äs a function of magnetic field, showmg the dependence on the phase difference φ of the superconductor at two tunnel barners The circles are meas[r] ...
46
Interference with a quantum dot single-photon source and a laser at telecom wavelength
... Figure 4(a) shows the measured normalized coinciden- ces, without background subtraction, after collecting data for co- and cross-polarized photons. For non-interfering pho- tons, the second-order correlation function g ...
5
Studies on the Effective Physical Parameters for Chirp Reduction in Optical Injection Locked Semiconductor Lasers
... of semiconductor lasers has been actively investigated ...increase laser bandwidth and to reduce noise and chirp with proper injection-locking conditions [1], ...source laser (master laser) ...
5
RSOA BASED 10G WDM FOR LONG REACH PON USING MANCHESTER CODING FOR REMODULATION.
... We implement a directional WDM PON using RSOA and evaluated the effects of using Manchester format for the downstream signal on the performance of upstream signal.Fig2 and Fig 3 shows the experimental setup. For the down ...
9
Pseudorelativistic laser-semiconductor quantum plasma interactions
... high-density semiconductor plasma with a fixed neu- tralizing ionic ...relativistic quantum plasma. In the past, relativistic effects in gaseous quantum plasmas have been invoked by using collective ...
12
Graphene Semiconductor Quantum Well with Asymmetric Energy Gaps
... ductor quantum well with asymmetric energy gaps of the ...the quantum well, the two dimensional Dirac equation was established and the boundary conditions of the quantum well ...
6