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SCHOTTKY-BARRIER DIODES

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

... 4H-SiC Schottky barrier diodes using various metal contacts are available ...Cr/4H-SiC Schottky contacts [13, 14, and ...making Schottky contacts because it makes both silicides and ...

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Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

... Vertical GaN Schottky barrier diodes (SBDs) were fabricated on Ge-doped free-standing GaN substrates. The crystal quality of the SBDs was characterized by cathode luminescence measurement, and the ...

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Characterization of graphene silicon Schottky barrier diodes using impedance spectroscopy

Characterization of graphene silicon Schottky barrier diodes using impedance spectroscopy

... a more reliable SBH value using a proper equivalent circuit model for the analysis. It is expected that this kind of approach to the investigation of graphene-based nanoscale devices will allow the interface of the ...

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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

... switching MOSFET has not been fully characterized and understood. The deployment of these 1.2 kV SiC power devices in hard-switched high temperature modules will require more understanding in the dependence of switching ...

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Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes

Analytical Studies of Metal Insulator Semiconductor Schottky Barrier Diodes

... semiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer ...the Schottky contact behave as an ideal diode of apparently high ...

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Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

... type Schottky barrier diodes ...ZnO/p-Si diodes were measured under dark at room ...and barrier height ( b ) of the diodes were analyzed using standard thermionic ...

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Electrically active defects in novel Group IV semiconductors

Electrically active defects in novel Group IV semiconductors

... p-type Schottky barrier diodes in the temperature range of 200-400K are shown in figure ...the barrier height (pu decreased with decreasing ...lower barrier and therefore current ...

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High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

... voltage Schottky barrier diode (SBD) and metal-oxide-semiconductor field-effect transistor (MOSFET) ...[8–12]. Schottky barrier diodes pos- sess the advantages of fast switching speed ...

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Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n Type InP

Annealing Effects on Electrical Properties and Interfacial Reactions of Ni/Cu Schottky Rectifiers on n Type InP

... (100) Schottky barrier ...Al/n-InP Schottky diode. They reported that the DNA increases an effective barrier height as high as ...Au/n-InP Schottky diodes. They reported that the ...

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Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

... with great interest over the years [12-17]. The chemical inertness of the basal plane due to the lack of dangling bonds make it an ideal material for the evolutionary studies in Schottky barrier ...

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Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si on Insulator

Temperature Dependency of Schottky Barrier Parameters of Ti Schottky Contacts to Si on Insulator

... Ti Schottky contact to SOI clearly reveal that its carrier conduction deviate from pure thermionic emission ...Ti/SOI Schottky contact, an analytical potential fluctuation model on spatially inhomogeneous ...

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SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

... potential barrier, (ii)quantum-mechanical tunneling of carriers through potential barrier, (iii) carrier recombination in depletion region and (iv) carrier recombination in neutral region of semiconductor ...

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American Journal of Nanomaterials

American Journal of Nanomaterials

... GaN nanowires have garnered much attention in recent years due to their attractive optical and electrical properties. GaN nanowires have been studied extensively [63]. GaN nanowires have been used as building units to ...

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The Community Rating System: Assessing Indicators of Community Participation, A Dasymetric and Sovi Approach

The Community Rating System: Assessing Indicators of Community Participation, A Dasymetric and Sovi Approach

... the Schottky barrier height and favors the electron ...as barrier demands metal which have higher ability to penetrate through the barrier and touch the 2DEG for ensuring electrical ...

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Design and Applications of Schottky Barrier Carbon Nanotube Field Effect Transistor

Design and Applications of Schottky Barrier Carbon Nanotube Field Effect Transistor

... in Schottky barrier carbon nanotube FETs ...a Schottky barrier CNTFET, the energy band diagram for the structure should be ...nanotube, Schottky barriers are ...the Schottky ...

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Investigation of vertically stacked hybrid devices

Investigation of vertically stacked hybrid devices

... the Schottky contacts between carbon and silicon have been thoroughly ...ance. Schottky diodes are frequently used as high-speed switching devices due to their sim ple structure and relatively fast ...

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Hydrogen doped thin film diamond: Properties and application for electronic devices

Hydrogen doped thin film diamond: Properties and application for electronic devices

... the Schottky devices fabricated. It became more prominent when the diodes were tested at the higher voltage ...Al-Au Schottky contacts on W M 60 and in Figure ...the Schottky metals form sharp ...

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Utilization of Embedded Metal Nanostructures for Solar Cells

Utilization of Embedded Metal Nanostructures for Solar Cells

... gold has a work more noteworthy than the work capacity of the silicon, each of gold nano-particles frames a Schottky contact with the n-sort silicon and an Ohmic contact with the p-sort silicon. In this manner, ...

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Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

Electrical Properties of a Ga0.952In0.048N0.016As0.984 p-i-n Schottky Barrier Diode

... the Schottky barrier diode (SBDs) parameters of GaInNAs multiple quantum wells (MQWs) p-i-n devices often require perfect ...(η), Schottky barrier height ( ∅ 𝑏 ) and series resistance have ...

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Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

... lower Schottky barrier height, which causes the higher ideality factor ...AlGaAs Schottky diode at different temperatures with doping concentration of (a) N A =1×10 cm 16 −3 ...

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