Si film
Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles
... Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si ...the film ’ s composition and the annealing temperature on the film ’ s ...
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Excimer Laser Annealing of Hydrogen Modulation Doped a Si Film
... The depth profiles of the H concentration for an a-Si film on a glass substrate (sample C) with and without ELA by TOF-SIMS are shown in Fig. 11. For the a-Si film without ELA, the H concentration in the ...
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Stress Relaxation of Poly Si Film Formed by Excimer Laser Annealing
... We investigated the low-temperature processed polycrystalline-silicon (poly-Si) film formed by carrying out low-energy-density and multishot excimer laser annealing (ELA) of amorphous Si (a-Si) film on ...
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Patterned Si thin film electrodes for enhancing structural stability
... the Si film like a patterned Si film. The Si film including the space is expected to accumulate the stress generated by the volume change during the charge-discharge ...in ...
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N type doped silicon thin film on a porous Cu current collector as the negative electrode for Li ion batteries
... for Si thin ...a-Si film was deposited on a Cu sub- strate (9 mm, MTI) with different surface conditions by using a radio frequency magnetron sputtering system (Kurt ...n-doped Si target (Kurt ...
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Effect of Thickness on Boron-Doped Silicon Thin Film Deposited onto Silver-Aluminium Back Contact-Coated Plastic Substrate by Screen Printing
... the Si paste enabled the printing of Si thin films with different ...the Si thin films was investigated using different ...c-Si film was determined with an optical reflectometer ...
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Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... As has been pointed out by Jesson et al. [21], since there is no energy barrier to roughening except for mass trans- port along the surface, one of the consequences of the ATG instability-induced islanding is the ...
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Microstructures and the Charge Discharge Characteristics of Advanced Al Si Thin Film Materials
... 2235 mAh/g). When the ratio of Li/Al is 2.25, the storage of Li ions for Al is at its maximum. This means that Al has less restraint for the insertion of Li ions, even less than that of Si. But the cycleability ...
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Crystallization of polycrystalline silicon thin film by excimer laser annealing
... thin film fabrication required high temperature corning glass substrate due to high annealing temperature, which is higher than 650°C and longer period of annealing process, that is over 10 ...
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Application of Conductive Thin Films and Selectively Patterned Metal Oxide Coatings on Fibers by Atomic Layer Deposition.
... Figure 4.8(a) shows photographs: (i) prior to; and (ii) after coating with 400 ZnO ALD cycles, where the sample was cut to reveal the vertical penetration pattern. Figure 4.8(b) also shows: (i) a schematic sample cross ...
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Total dose and bias temperature stress effects for HfSiON on Si MOS capacitors
... the Si sur- face layer is in inversion, and significant electron tunneling oc- ...N film did not exhibit significant levels of electron trapping after irradiation, so the midgap voltage shift was negative ...
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Growth and characterization of TiO2 nanotubes from sputtered Ti film on Si substrate
... deposited film thickness, indicating selective electro- chemical oxidation/dissolution of Ti by the organic ...of Si as substrate, as typically exemplified in the current semiconductor industry, T- NT-based ...
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Flexible carbon nanotube/mono crystalline Si thin film solar cells
... mono-crystalline Si thin films were prepared by chemical etching of n-type (100) Si wafers (4 ...etched Si thin films were rinsed in deionized water several times to remove the residual ...the ...
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Fabrication and Properties of Cr2O3 and La0.7Sr0.3MnO3 Thin Film Heterostructures Integrated on Si(001).
... Spintronics is an acronym for spin based electronics, which is a new field that utilizes both charge and spin degree of freedom of an electron whereas in traditional electronics only electron charge is manipulated to ...
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Silicon Nanostructures Produced by Modified MacEtch Method for Antireflective Si Surface
... The aforementioned observations support the theory proposed by Li et al. [32]. It states that from the point of view of wave optics, the light wavelength in the low energy region (corresponds to long wavelengths) is much ...
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Fabrication and properties of ZnO/GaN heterostructure nanocolumnar thin film on Si (111) substrate
... decorated Si (111) substrates by pulsed laser deposition (PLD), ...on Si (111) substrate show the morphology of inclination ...thin film on GaN buffer layer is high, and the defect emission of ZnO ...
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Anode Properties of Composite Thick-Film Electrodes Consisted of Si and Various Metal Silicides
... pristine Si electrode showed rapid capacity decay until the 100th cycle, resulting in poor electrode ...of Si induced by its significant volumetric change during the charge−discharge ...of Si and ...
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Silicide formation and the interaction of metals with polycrystalline Si
... Impurity contaminations in the Cr film and at the Si-Cr interface are the most dominant influencing factors in the formation and kinetic rate of growth of crsi [r] ...
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Subject Index to Volume 29198-204
... Pd(I1) in H,SO, solutions, properties, a Pd/CO thin film layers, magnetism in, a Pd-SO,-Si, H, adsorption, a powders, production, in thick film inks precipitates from nuclear [r] ...
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Tunable antireflection from conformal Al doped ZnO films on nanofaceted Si templates
... Aluminum-doped ZnO, a transparent conducting oxide (TCO), is becoming increasingly popular as window layer and top electrode for next-generation highly efficient silicon-based heterojunction solar cells [1-4]. An ...
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