Si:P-SiO/sub 2/-Si
<p>Distribution of SiO<sub>2</sub> nanoparticles in 3D liver microtissues</p>
... medium, SiO 2 NPs were pelleted by centrifugation and resuspended in ...The SiO 2 concentration of the SiO 2 NP stock dispersion was analyzed by inductively coupled plasma ...
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Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces
... Fig. 2 ~ c ! , which effectively extends the Si substrate into oxide and increases the coordination of the interface Si atom of the substrate with oxygen atoms from one to ...and Si ...
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Effect of ribbon width on electrical transport properties of graphene nanoribbons
... and Si nanowires (NWs) were prepared by chemical vapor deposition and a combination of nanosphere lithography and metal‑assisted electroless etching from a Si wafer, ...heavily p‑doped Si ...
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Electron trapping in metal-insulator-semiconductor structures on n-GaN with SiO2 and Si3N4 dielectrics
... states occupied under thermal equilibrium ( i.e., V G = 0 ) . Therefore, little further trapping should be possible at the GaN/ nitrided-thin-Ga 2 O 3 interface due to substrate electron injection. The situation ...
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High Pressure Transformation of SiO2 Glass from a Tetrahedral to an Octahedral Network: A Joint Approach Using Neutron Diffraction and Molecular Dynamics
... O Si and also for the dependence of hni on p, where the p versus n ¯ O Si relationship was taken from MD ...between Si atoms survive to high ...at p ≳ 10 GPa [2,3,18], is ...
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Formation of SiO and Related Si Based Materials Through Carbothermic Reduction of Silica Containing Slag
... of SiO vapor can be achieved by reducing pure molten silica by solid silicon carbide at a temperature of 2073 K and higher under a lower pressure in the ...to SiO vapor, transport of the vapor by a carrier ...
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Development of a capacitive chemical sensor based on Co(II)-phthalocyanine acrylate-polymer/HfO 2/SiO2 /Si for detection of perchlorate
... perchlorate concentrations. We note in Fig. 5 the presence of two slopes: slope (1) of about 17 mV decade −1 indicates a very low detection of perchlorate in low concentrations and slope (2) of about 47 mV decade ...
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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. I. Two-step remote plasma-assisted oxidation-deposition process
... When SiO 2 thin films were deposited on Si, Ge, GaAs, and CdTe using remote plasma-enhanced chemical vapor deposition ( RPECVD ) , the substrates were slightly consumed by plasma-activated species ...
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EFFECT OF INORGANIC HYBRID LiBr ON THE SILICA MATRIX XEROGELS (RESEARCH NOTE)
... level with silanols being the main centers for water physisorption [5]. This chemical inhomogeneity of the surface is likely to be even stronger in the more complex, hybrid materials, owing to the presence of calcium ...
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Multiple Layers of Silicon-Silica (Si-SiO2) Pair onto Silicon Substrate towards Highly Efficient, Wideband Silicon Photonic Grating Coupler
... 5(c)-(d) show the TE mode profiles of light from the point of incidence of the grating coupler along the Si waveguide. The incident light, that is scattered by the surface gratings, propagates in +x, –x, and –y ...
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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
... face in which there is a transition from a rigid substrate to an ideal random covalent network and 共 ii 兲 compositionally de- pendent under- and overconstrained bonding in glass alloys such as Ge x Se 1 ⫺ x . 25,26 The ...
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Oxidized porous silicon for localized formation of SOI active regions
... a) P-type substrate with high dose fluorine implant leading to isolated silicon regions formed in a periodic ...b) P-type substrate with both fluorine and boron implants leading to porous Si ...nm ...
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Breakdown and Reliability of CMOS Devices with Stacked Oxide/Nitride and Oxynitride Gate Dielectrics Prepared by RPECVD
... accumulation region due to the oxide thinning effect. A C-V shift corresponding to positive charge generation is observed under negative-gate voltage stressing, which agrees with the results in a 5.1-nm gate oxide [28]. ...
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Fabrication of Si heterojunction solar cells using P doped Si nanocrystals embedded in SiNx films as emitters
... of p-type sc-Si substrates for fabrication of Si heterojunction solar cells, as shown in the inset of Figure ...basic Si-NCs/sc-Si heterojunction solar cells without the designs or ...
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Improved intermittency analysis of proton density fluctuations in NA49 ion collisions at 158 AGeV
... accomplished by constructing an artificial set of mixed events. These are created by merging tracks from di ff erent original events into new events of the same (average) multiplicities. Mixed events thus contain ...
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Characterization of photovoltaics with In2S3 nanoflakes/p Si heterojunction
... a well coverage and turns into a cylinder-like structure with a hemispherical top as shown in the inset of Figure 6b. The deposition thickness of the AZO was es- timated to be 400 nm. Jiang et al. [22] revealed that they ...
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The highly conserved 5' untranslated region as an effective target towards the inhibition of Enterovirus 71 replication by unmodified and appropriate 2'-modified siRNAs
... interleukin-1 receptor domain-containing adaptor indu- cing beta interferon (TRIF) [34]. EV71 also antagonizes type I interferon signaling by reducing the level of inter- feron receptor 1 [35]. Traditional interferon ...
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A multilayered approach of Si/SiO to promote carrier transport in electroluminescence of Si nanocrystals
... Film thickness was monitored by a calibrated microba- lance (MDC-360, Maxtek Digicom Limited, Shenzen, China). The PL spectra were recorded on a fluorescence spectrometer (F-4500, Hitachi High-Tech, Minato-ku, Tokyo, ...
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The Electromagnetic Properties of the Generalized Cantor Stack in Spherical Multilayered Systems
... Our results are shown in Figs. 2–5. As it was already mentioned such a Cantor set has the alternating structure ABCB, . . . , CB, . . . , D that due to non-symmetric rule Eq. (1) generates the sequence of ...
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Reduced 1/f noise in p Si0 3Ge0 7 metamorphic metal–oxide–semiconductor field effect transistor
... 300 nm p-type (5 ⫻ 10 19 cm ⫺ 3 ) polycrystalline silicon gate. The LF noise was measured using an HP 35670A dy- namic signal analyzer and custom-made preamplifier con- taining OPA637 共 Texas Instruments 兲 and ...
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