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SiC power Schottky diodes

Evaluation of SiC Schottky diodes using pressure contacts

Evaluation of SiC Schottky diodes using pressure contacts

... PiN diodes to enable reverse current conduction capability, several of which are connected in parallel for high current conduction ...with SiC Schottky diodes is interesting, given that ...

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Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature

Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature

... of SiC SBDs as rectifiers rather than conventional silicon PiN diodes can significantly reduce thermal stress, lower power losses [5] and enhance the conversion efficiency by removing the reverse ...

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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

... of SiC devices have raised the high temperature expectations considerably as they are proven to act better in such conditions compared to their silicon counterparts ...The power supply provides the charge ...

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Development of Optimal 4H-SiC Bipolar Power Diodes for High-Voltage High-Frequency Applications.

Development of Optimal 4H-SiC Bipolar Power Diodes for High-Voltage High-Frequency Applications.

... the Schottky-Reid-Hall (SRH) ...the SiC surface by the removal of silicon, and then subsequently diffuse to annihilate vacancies due to the high temperatures present during the oxidation ...

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ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

... of SiC for the fabrication of high quality devices depend to a large extent on the quality of the metal–SiC ...4H- SiC has been chosen for the fabrication of Schottky barrier diodes ...

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Pressure contact multi chip packaging of SiC Schottky diodes

Pressure contact multi chip packaging of SiC Schottky diodes

... Press-pack IGBTs are a suitable packaging alternative to the direct bonded copper (DBC) based power modules in applications which require an enhanced robustness and reliability. The improved reliability of ...

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SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

... Silicon Carbide (SiC) is a promising semiconductor material for electronic power applications. Among its properties, there are its high electric field strength, high electron drift velocity, high thermal ...

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Modelling the inhomogeneous SiC Schottky interface

Modelling the inhomogeneous SiC Schottky interface

... The Schottky diode operates with very fast switching speeds and low turn-on voltages when compared to a PiN diode, due to its reliance only on majority carrier transport, free of the recombination ...the ...

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On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes

On the application of novel high temperature oxidation processes to enhance the performance of high voltage silicon carbide PiN diodes

... voltage power electronics systems as we move into a lower carbon ...future power electronics systems as well as offering both higher voltage and higher temperature operating ...PiN diodes and ...

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Quasi Switched Boost Network Based DC-DC Converter

Quasi Switched Boost Network Based DC-DC Converter

... ABSTRACT: In this work, an isolated high step-up DC-DC converter is presented based on the quasi-switched- boost network. The important features of this converter are continuous input current and reduced turns ratio of ...

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Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer

Analysis of Punch-Through Breakdown Voltages in 3C-Sic Schottky Barrier Diode Using Gaussian Profile for 200µm Thick Wafer

... A lightly doped n-type blocking layer is grown on a SiC substrate by chemical vapour deposition. The doping and thickness of the epilayer are selected so that the desired blocking voltage is achieved. On the top ...

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Effects induced by high and low intensity laser plasma on SiC Schottky detectors

Effects induced by high and low intensity laser plasma on SiC Schottky detectors

... In the present paper we report some aspects regarding the damage induced in SiC detectors when exposed for long time to laser generated plasma. Two different detectors were tested. The first detector is an ...

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Development of 4H SiC PiN diodes for high voltage applications

Development of 4H SiC PiN diodes for high voltage applications

... The PiN diode is one of most important power semiconductor devices for high voltage applications that are beyond the practical limits of unipolar-type SBDs, as discussed in Section 2.2.1. The structure typically ...

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Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

... In this study, ZnO layer was deposited on p-type Si by using the ALD technique to prepare high-quality Al/ALD- grown ZnO/p-Si Schottky diodes. The MIS type diode was analyzed by using XRD, AFM, and SIMS. ...

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American Journal of Nanomaterials

American Journal of Nanomaterials

... The RT fast and reversible vertical-heterostructure diode gas sensor composed of reduced graphene oxide and AlGaN/GaN was investigated and reported by Bag et al. [88]. In that study, a vertical heterostructure diode ...

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Hydrogen doped thin film diamond: Properties and application for electronic devices

Hydrogen doped thin film diamond: Properties and application for electronic devices

... This method is named after the founder, Raman [1928]. When an intense monochromatic light source like a laser is incident on the target, interaction between incident electromagnetic laser radiation and the electrons in ...

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Highly sensitive hydrogen sensor based on graphite InP or graphite GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Highly sensitive hydrogen sensor based on graphite InP or graphite GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

... SEM. Diodes were prepared by making Schottky contacts with colloidal graphite on semiconductor surfaces previously deposited with Pd NPs and ohmic contacts on blank ...the diodes showed high ...

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What Do We Know About Technical Assistance? Enhancing the Science and Practice of Technical Assistance via a Research Synthesis

What Do We Know About Technical Assistance? Enhancing the Science and Practice of Technical Assistance via a Research Synthesis

... the SiC single crystals and their radius ranges from a few tens of nanometers to several tens of ...of SiC based power devices and radiation detectors is severely degraded by these micropipes [56, ...

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Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

... The increase in the barrier height and the decrease in the ideality factor with the increase in the temperatures points to a divergence from the pure TE theory. This behaviour which is inconsistent with TE theory could ...

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Analog Laser Diode Setup for Gray Scale Image Engraving

Analog Laser Diode Setup for Gray Scale Image Engraving

... Jeff Woodcock, who developed laser gray shade image engraving, or etching, uses a US Digital MA3 electromechanical rotary encoder coupled to the Z axis of his routers to produce a proportional 0 to 5 vdc voltage signal ...

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