SiGe-Si:O,H
Heating Effect of Polycrystalline SiGe/Si Thin Films on Phase Transition of GeSbTe Films
... the SiGe/Si heating electrode has a beneficial effect on decrease of the current required to induce phase transition of chalcogenide materials, namely, transition ...of SiGe compared to typical metals ...
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Electronic Defect Characterization of Strained-Si/SiGe/Si Heterostructure
... strain relaxation and dislocation generation, there are limited efforts to study the electrical properties of the extended defects generated at the strained-Si/SiGe interface, particularly ...
109
Effects of Strain Relaxation in SiGe Growth on Uniquely Oriented Si Substrates
... which SiGe layers grown on theses high index surfaces relax plastically due to dislocation ...The SiGe/Si heteroepitaxial system is ideal to study lattice mismatched ...because Si processing, ...
129
Maximum entropy mobility spectrum of two dimensional hole gas in strained Si1 x/Si heterostructures
... Analysis of the magnetic-field-dependent resistivity tensors reveals a two-dimensional hole gas 2DHG in the Si/SiGe/Si quantum well, carriers in the boron-doped cap layer, and an unknown[r] ...
213
Theory and design of quantum cascade lasers in (111) n -type Si/SiGe
... We restricted our (111) design to layer thicknesses above 8 ˚ A as Si/SiGe epitaxy is not as well established as in III-V systems. The thinnest barrier would ideally be thinner than this to increase the ...
8
High Temperature Thermoelectric Measurement of B Doped SiGe and Si Thin Films
... BHE. This system has two silver blocks equipped with thermocouple, TC, inside, which grip the sample ends to have both electrical and thermal contacts. One block has its own miniature heater with PID control and the ...
7
Theoretical Investigation of Electronic and Optical Properties of Si/SiGe Quantum Cascade Structures
... We note that the optimization of the active zone has for an essential purpose to control the electrons phonons interactions, the injection and the extraction of the carri- ers from the emission zone to the other one and ...
6
Improved analog performance in strained Si MOSFETs using the thickness of the silicon germanium strain relaxed buffer as a design parameter
... strained Si MOSFETs on the switching characteristics of a CMOS inverter and voltage gain of a push-pull inverting amplifier is assessed by TCAD ...Strained Si nMOSFETs on 4 µm and 425 nm thick ...
36
Determination of bandgap narrowing and parasitic energy barriers in SiGe HBTs integrated in a bipolar technology
... For comparison purposes, mesa transistors were also fabri- cated using a previously described process [19]. In this case, the extrinsic base was fabricated using a dual implant of 35 keV, 2.10 cm BF and 120 keV, 2.10 cm ...
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High Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture
... strained Si devices was sim- ilar to that of the control device ...unstrained Si is expected from Si/SiGe material with such low values of cross-hatching roughness ...strained Si device ...
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The impact of self heating and SiGe strain relaxed buffer thickness on the analog performance of strained Si nMOSFETs
... the SiGe strain relaxed buffer (SRB) thickness on the analog performance of strained Si nMOSFETs is ...strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared ...
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Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs
... This research work was also possible due to generous support of Advanced Micro Devices, Austin Texas, where I interned as a process development engineer for strained Si devices. I would like to specially thank my ...
123
Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals
... of Si single crystal with intensity which exceeds melting of material leads to formation of microcones, which are possible to use for solar cells, the so-called black Si ...
8
Growth and characterization of gold catalyzed SiGe nanowires and alternative metal catalyzed Si nanowires
... in Si and Ge, and be responsible for serious problems of contamination for the CMOS ...technology. Si NW growths using alternative metal cata- lysts have already been reported previously with Pt [20], Al ...
9
Design of High Performance Si/SiGe Heterojunction Tunneling FETs with a T Shaped Gate
... of Si, Ge, and SiGe alloys are considered the most promising material system for the TFET due to their natural abun- dance and well-established fabrication technology; there- fore, the pocket regions choose ...
8
The influence of BF2 and F implants on the 1/f noise in SiGe HBTs with a self aligned link base
... in SiGe heterojunction bipolar transistors (HBTs), there is some evidence to suggest that the link base can be a source of noise if it is not correctly opti- mized [12], ...the SiGe intrinsic base and the ...
8
Electron transport in n-doped Si/SiGe quantum cascade structures
... duction band minima occur near the X point of the Brillouin zone, and the low-lying conduction band quantized states in a Si/SiGe multilayer structures hence originate from the six X valleys. The X valleys ...
7
Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... the SiGe films deposited on Si substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD) were transformed into self-assembled SiGe nanoisland arrays by thermal ...resultant SiGe ...
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Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System
... similar results were also obtained by other people’s work 5,6 . S. E. Thompson et. al. calculated that the optimal stress configuration for enhanced carrier mobility for pMOSFETs is dominant longitudinal compressive ...
141
n-Si/SiGe quantum cascade structures for THz emission
... of Si and Ge imply that layers in Si/SiGe cascade have to be uniaxially strained, the amount of strain being set by the choice of the substrate composition (Ge molar fraction xs), in turn chosen so ...
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