strained Si surface channel
High Performance nMOSFETs Using a Novel Strained Si/SiGe CMOS Architecture
... the strained Si and Si Ge layers enable the confinement of holes in the buried Si Ge layer under negative bias conditions and a layer of electrons at the surface of the strained ...
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Compressively strained, buried channel $Si {0 7}$Ge$ {0 3}$ p MOSFETs fabricated on SiGe virtual substrates using a 0 25 µm CMOS process
... buried channel device is above that of the control Si sample for the lithographic gate lengths but below the strained-Si surface channel ...effective channel length is ...
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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics
... against surface asperities in strong inversion conditions. These Si channel surface asperities can be characterised by the root-mean-square roughness and the correlation length ...[26]. ...
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Improved self gain in deep submicrometer strained silicon germanium pMOSFETs with HfSiOx/TiSiN gate stacks
... the Si control devices at 100 nm and 55 nm gate length ...effective channel length in the Si control devices and higher Early voltage in the SiGe ...compressively strained SiGe reduces the ...
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Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress
... Ge channel transistors to have significantly improved mobil- ity and driving current over their Si and SiGe channel competitors, compressive strain is essential ...axially strained Ge-based ...
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An Explicit Surface Potential Based Biaxial Strained Si n MOSFET Model for Circuit Simulation
... resistance, channel length modulation, static feedback, drain induced barrier lowering and weak-avalanche amongst others can be fully captured in ...for strained-Si nMOSFETs based on regional ...
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Hole weak anti localization in a strained Ge surface quantum well
... QW surface layer. This is a typical design for sur- face channel structures employed in modern MOSFET devi- ...The surface of the Si wafers was cleaned by an in situ thermal bake in H 2 ...
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Design and simulation of strained-Si/strained-SiGe dual channel hetero-structure MOSFETs
... short channel device as a function of varying electric ...the surface channel and buried channel layers and is a strong function of the thickness of the capping ...
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Performance enhancements in scaled strained SiGe pMOSFETs with HfSiOx/TiSiN gate stacks
... short channel SiGe devices has been shown to exceed that of co-processed Si controls by as much as 65% in 100 nm devices, whereas extrinsic gains are completely diminished for drawn gate lengths below 175 ...
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First Principles Calculation of CO and H2 Adsorption on Strained Pt Surface
... the surface and is adsorbed on the top site of a Pt (111) surface in ...Pt surface in our clean-surface ...Pt surface obviously changes DOS ...
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Universal Mobility-Field Curves For Electrons In Polysilicon Inversion Layer
... This paper reports results of mobility behaviors in n- channel Poly-Si TFT's with 10 16 cm -3 substrate impurity concentration . Also, the mobility degradation by phonon scattering was studied. From these ...
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The impact of self heating and SiGe strain relaxed buffer thickness on the analog performance of strained Si nMOSFETs
... of strained Si nMOSFETs is ...µm strained Si MOSFETs fabricated on 425 nm SiGe SRBs is increased by over 100% compared with strained Si devices fabricated on conventional SiGe ...
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Improved analog performance in strained Si MOSFETs using the thickness of the silicon germanium strain relaxed buffer as a design parameter
... The MOSFET models were used in the “circuit analysis advanced application” module in MEDICI where the terminals were connected in an inverter configuration. Since the mechanism of heat generation is similar for holes and ...
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Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors
... to strained Ge of about 92 ...high Si content of 20 ...indicated Si and Sn ranges) a very low BTBT current is expected at drain ...GeSn/ strained Ge/SiGeSn structure, is presented in ...sharp ...
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A Review on Power MOSFET Device Structures
... The vertical cross section of a VDMOS device is as shown in Fig 5(b). In this the source is over the drain, so current flows mainly in vertical direction when it is on [7]. Mostly devices are now fabricated with vertical ...
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Oriented Liquid Crystalline Polymer Semiconductor Films with Large Ordered Domains.
... The strained pBTTT films are printed onto unmodified pristine glass or OTS treated glass ...60% strained sample on pristine glass substrates is shown in ...
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The MBE growth and electrical characterisation of high resolution doped Si/GeSi structures
... World record mobilities in strained SiGe channel MBE-grown normal structures are obtained through the use of very high substrate temperatures during growth whilst reducing the Ge concent[r] ...
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Analysis of flow through rectangular mini channel with surface irregularities
... of surface phenomena on micro scale flows using Micro Particle Image Velocimetry ...micro- channel of hydraulic diameter 637 µm with rough walls having relative roughness ...a channel with smooth ...
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Maximum entropy mobility spectrum of two dimensional hole gas in strained Si1 x/Si heterostructures
... Analysis of the magnetic-field-dependent resistivity tensors reveals a two-dimensional hole gas 2DHG in the Si/SiGe/Si quantum well, carriers in the boron-doped cap layer, and an unknown[r] ...
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Electronic Defect Characterization of Strained-Si/SiGe/Si Heterostructure
... the surface of strained-Si device layer, and degrade the final MOSFET device performance at the strained-Si surface by increasing the leakage current ...tensile-strained ...
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