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strained single quantum well

Hole weak anti localization in a strained Ge surface quantum well

Hole weak anti localization in a strained Ge surface quantum well

... the single-subband regime, by fitting the weak anti-localization peak to an analytic model, we extract the characteristic transport time scales and a spin splitting energy D SO 1 ...

6

Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well

Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well

... While MIRO have been actively investigated for more than a decade [1], their observation has remained unique to n-type GaAs/AlGaAs. Indeed, experiments on microwave photoresis- tance in p-type GaAs/AlGaAs [19], in n-type ...

6

The Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop

The Effects of Strained Multiple Quantum Well on the Chirped DFB-SOA All Optical Flip-Flop

... a single quarter wavelength shifted (QWS) DFB laser diode [7], an optically bi-stable integrated SOA and DFB-SOA [8], a bi-stable QWS-DFB semiconductor laser amplifier with tapered grating [9], and a bi-stable DFB ...

7

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas

... a single carrier ...observable quantum Hall plateaus and instead sharp minima occurring in the Hall resistance at the integer filling factor, with tem- perature dependent ...

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Spinless composite fermions in an ultrahigh quality strained Ge quantum well

Spinless composite fermions in an ultrahigh quality strained Ge quantum well

... a strained Ge quantum well is a single-valley, single-band material system, with an out-of-plane component of the Land´e g factor which is an order of magnitude larger than for ...

5

Transport properties for pure strained Ge quantum well

Transport properties for pure strained Ge quantum well

... the strained Ge quantum wells will require structural and electrical characterization to explain the ...of quantum transport that can be used to extract values for the hole effective mass and a ...

189

Eigenfunctions for a Quantum Wire on a Single Electron at Its Surface and in the Quantum Well with Beaded Fractional Quantized States for the Fractional Charges

Eigenfunctions for a Quantum Wire on a Single Electron at Its Surface and in the Quantum Well with Beaded Fractional Quantized States for the Fractional Charges

... potential well dominate over the centrifugal potential and the quantum well becomes more deep with radius of the electron becoming more smaller (charge, ...potential well, i.e., quantum ...

8

Rashba spin splitting and terahertz quantum Hall effect for heavy holes in strained germanium quantum wells

Rashba spin splitting and terahertz quantum Hall effect for heavy holes in strained germanium quantum wells

... the modulation doping consists of introducing impurities away from the channel (the QW in this case) to reduce impurity scattering. As depicted in Figure 3.3(a), the creation of the 2DHG within fully strained ...

153

Terahertz quantum Hall effect for spin split heavy hole gases in strained Ge quantum wells

Terahertz quantum Hall effect for spin split heavy hole gases in strained Ge quantum wells

... To qualitatively clarify the oscillation of Γ with B(figures 3(e) and (f)) and the differences between the two samples, the JDOS was calculated from the LL fans in fi gures 3 ( c ) and ( d ) . LLs with a Lorentzian shape ...

10

Stimulated Emission in AlxGa1-xAs -GaAs Single and 
Multiple Quantum Well Heterostructure.

Stimulated Emission in AlxGa1-xAs -GaAs Single and Multiple Quantum Well Heterostructure.

... In MBE, molecular beams of various elements are spraying from the heated effusion cells to the substrate. The shutters can be elaborately controlled to open and close, thus the abrupt change in the film thickness and ...

78

Resonance fluorescence from a telecom-wavelength quantum dot

Resonance fluorescence from a telecom-wavelength quantum dot

... Unless indicated otherwise, fulltext items are protected by copyright with all rights reserved. The copyright exception in section 29 of the Copyright, Designs and Patents Act 1988 allows the making of a single ...

8

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers

... 1.3-μm quantum dot (QD) laser was de- veloped; however, there has been no distinct development or progress on quantum dot growth since then up till ...1.3-μm quantum dot laser has once again become a ...

6

Bound states in continuum: Quantum dots in a quantum well

Bound states in continuum: Quantum dots in a quantum well

... in quantum dots do not come necessarily ...called quantum rods, exhibit bound excited state with an energy embedded in the continuum of other free electronic states, above the ionization ...complex ...

15

Detection of hydrogen using graphene

Detection of hydrogen using graphene

... a single graphene sheet (reflection, transmission, and absorption) to the impact of hydrogen atoms and its iso- topes in an energy range below 200 ...the quantum-classical SCC-DFTB results mainly due to the ...

14

Narrow heavy hole cyclotron resonances split by the cubic Rashba spin orbit interaction in strained germanium quantum wells

Narrow heavy hole cyclotron resonances split by the cubic Rashba spin orbit interaction in strained germanium quantum wells

... An enhanced spin-orbit interaction and a long spin de- coherence time were demonstrated concurrently with a high mobility, emphasizing the potential of strain-engineered Ge quantum wells for CMOS-compatible ...

7

Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

Analytical Investigation of Slow Light Systems with Strained Quantum Wells Structure under Applied Magnetic and Electric Fields Based on V-type EIT

... In this section, we report the impacts of an applied electric field on SDF and refractive index of the strained quantum well slow light system. Figure 4 shows the results of applying an electric ...

7

Schmid, Christian
  

(2008):


	Multi-photon entanglement and applications in quantum information.


Dissertation, LMU München: Fakultät für Physik

Schmid, Christian (2008): Multi-photon entanglement and applications in quantum information. Dissertation, LMU München: Fakultät für Physik

... of quantum mechanics coerced physicists into radically changing the concepts they used to describe the ...Planck’s quantum hypothesis, never liked the consequences following from quantum ...of ...

177

Fractional quantum Hall states in a Ge quantum well

Fractional quantum Hall states in a Ge quantum well

... We have analysed the data using the model developed in [7, 19]. This assumes that localized regions or puddles of compressible regions are nucleated within the incom- pressible quantum Hall fluid. The dissipative ...

8

Quantum squeezing effects of strained multilayer graphene NEMS

Quantum squeezing effects of strained multilayer graphene NEMS

... (4) where ε is the strain applied on the graphene film. In order to achieve quantum squeezing, R must be less than 1. According to Equation 4, R values of monolayer and bilayer graphene films with various ...

6

Ultra high hole mobilities in a pure strained Ge quantum well

Ultra high hole mobilities in a pure strained Ge quantum well

... Hole mobilities at low and room temperature (RT) have been studied for a strained sGe/SiGe heterostructure using standard Van der Pauw resistivity and Hall effect measurements. The range of magnetic field and ...

6

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