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switching memory

RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

RETRACTED ARTICLE: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interface

... Resistive switching random access memories (RRAM) with simple metal-insulator-metal stacks are under intensive investigation owing to their great promise for use in next-generation memory applications ...in ...

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Status and Prospects of ZnO Based Resistive Switching Memory Devices

Status and Prospects of ZnO Based Resistive Switching Memory Devices

... resistive switching memory (RRAM) devices has been ...the switching characteristics of ZnO-based switching memory devices are ...of switching including complementary ...

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Effect of non lattice oxygen on ZrO2 based resistive switching memory

Effect of non lattice oxygen on ZrO2 based resistive switching memory

... the memory state can be reset back to the HRS by applying a bias voltage regardless of its polarity, so we suppose that the reset process happens due to thermal oxidation of the oxygen vacancies in the CF by ...

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Switching memory perspective

Switching memory perspective

... long-term memory with a field perspective, with the possible exception of memories encoded during altered states of conscious, ...long-term memory because they contain fewer details, and over time, ...

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Impact of program/erase operation on the performances of oxide based resistive switching memory

Impact of program/erase operation on the performances of oxide based resistive switching memory

... grown by atom layer deposition (ALD) technology, which has the advantage of well controlling on the deposition pa- rameters and excellent deposition uniformity. Finally, the 10/70-nm-thickness Ti/Pt bilayer or ...

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Study on the Multi level Resistance Switching Memory and Memory State Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

Study on the Multi level Resistance Switching Memory and Memory State Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions

... the memory properties; the prototypical diode behavior indicates that a Schottky barrier is formed at the Pt and n-type Nd:STO interface and domi- nates the resistance of Pt/Nd:STO/In ...

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Self Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2 x
                     /Hf Stack

Self Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2 x /Hf Stack

... The long time issue faced by semiconductor industry was searching for efficient methods to overcome the fundamental scaling limits of charge-based information storage devices. One of the promising methods is to use ...

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The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template

... access memory cells is investigated based on nanoporous anodized aluminum oxide template, which eventually realizes RS behavior on ...resistive switching behaviors are discussed ...

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Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

Statistical characteristics of reset switching in Cu/HfO2/Pt resistive switching memory

... the switching parameters and negatively affects the commer- cial application of RRAM ...the switching parameters and deepening the understanding of the underlying physical mechanism behind the RS statistics ...

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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface

... The switching mechanism was successfully explained for structures with and without the Ti ...large memory size of ...resistive switching memory performance but also aid future design of ...

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Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

Copper pillar and memory characteristics using Al2O3 switching material for 3D architecture

... resistive switching memory device can be programmed under posi- tive voltage through Cu pillar; however, it is not possible to erase through Cu pillar if it needs lower voltage than that of ...

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Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory

Resistive Switching in Transition Metal Oxides for Integrated Non-volatile Memory

... high-density memory integration without any ...unselected memory cell passes current in either direction when it is in "ON" (low resistance) state and can thereby introduce unintended addressing of ...

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Stochastic switching of TiO2 based memristive devices with identical initial memory states

Stochastic switching of TiO2 based memristive devices with identical initial memory states

... two switching events (I and II), cases A and B require the same activation energy for forming and rupturing the percolation filaments in the following switching ...resistive switching events oc- ...

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Cocaine dependence and attention switching within and between verbal and visuospatial working memory

Cocaine dependence and attention switching within and between verbal and visuospatial working memory

... Fourteen right-handed healthy, non-cocaine users (11 women, mean age ± SD: 24.3 ± 3.8, age range: 20-33) who took part in a previous study with exactly the same attention switching task (Kübler et al., 2003), ...

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Minimal energy control of a nanoelectromechanical memory element

Minimal energy control of a nanoelectromechanical memory element

... the switching energy in a nanoelectromechanical memory system and to characterise global stability of the oscillatory states of the bistable memory ...

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Room temperature spin orbit torque in NiMnSb

Room temperature spin orbit torque in NiMnSb

... Materials that crystalize in diamond-related lattices, with Si and GaAs as their prime examples, are at the foundation of modern electronics. Simul- taneoulsy, the two atomic sites in the unit cell of these crystals form ...

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The role of working memory in academic achievement

The role of working memory in academic achievement

... working memory is “a system for the temporary holding and manipulation of information during the performance of a range of cognitive tasks such as comprehension, learning, and ...

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WRL TN 56 pdf

WRL TN 56 pdf

... This report also presents the DRAM memory access times and bandwidths of the Itsy Pocket Computer Architecture as a function of the processor speed. This data is given in the Appendix A. Some of the material ...

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Synthesis and structural properties of Mg-Mn ferrites prepared by chemical co-precipitation method.

Synthesis and structural properties of Mg-Mn ferrites prepared by chemical co-precipitation method.

... These ferrites highly suitable for memory and switching circuits in digital computers and phase shifters as they have characteristic rectangular hysteresis loop, The [r] ...

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Switching destinations: memory change in wood ants

Switching destinations: memory change in wood ants

... its memory of what its surroundings look like from the vantage point of that site (Durier et ...This memory is encoded in retinotopic coordinates and the ant moves until the image on its retina resembles ...

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