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thin-film PECVD silicon nitride

Opto Structural Properties of Silicon Nitride Thin Films Deposited by ECR PECVD

Opto Structural Properties of Silicon Nitride Thin Films Deposited by ECR PECVD

... the film, representing the product atomic volume density × thickness (n × e atoms/cm 2 ), may be derived from its corresponding peak area (see Figure ...the film, but the non-symmetrical shape of its ...

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Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride

Aspects of Silicon Solar Cells: Thin-Film Cells and LPCVD Silicon Nitride

... Thanks to Sanju Deenapanray for wise and friendly help with the PECVD system and the RTA system at EME. Thanks to Mladen Petravic for the SIMS measurements and Alistair Sproul for the lifetime measurements ...

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Fabrication and characterization of silicon nitride thin film planar waveguides produced by RF magnetron sputtering technique

Fabrication and characterization of silicon nitride thin film planar waveguides produced by RF magnetron sputtering technique

... the silicon nitride based oxide/nitride/oxide (ONO) waveguide in ...of silicon dioxide lower cladding by thermal oxidation technique on silicon ...of silicon nitride was ...

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Liquid phase epitaxy of silicon for thin film silicon solar cells

Liquid phase epitaxy of silicon for thin film silicon solar cells

... Abstract In this work, thin crystalline silicon films have been grown by liquid phase epitaxy LPE on single crystal and multicrystalline silicon substrates, with the aim of evaluating an[r] ...

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Surface scattering mechanisms of tantalum nitride thin film resistor

Surface scattering mechanisms of tantalum nitride thin film resistor

... In our research, a TaN thin film resistor chip was fab- ricated to do the current–voltage measurement and ana- lysis. Different TaN films with different manufacture processes were applied so as to analyze ...

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Degradation processes of platinum thin films on a silicon nitride surface

Degradation processes of platinum thin films on a silicon nitride surface

... of thin platinum films as a function of the temperature is due to degradation effects that are accelerated by high ...nm thin platinum films adhered to a silicon-nitride surface using an ...

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Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon  Carbide on Various Materials Surface

Room Temperature and Reduced Pressure Chemical Vapor Deposition of Silicon Carbide on Various Materials Surface

... In order to effectively maintain the reactive sites, the entire process should be performed without exposure to air, by means of deleting a substrate transfer operation. The easiest way is to introduce the ...

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Amorphous Nanocrystalline Transition in Silicon Thin Films Obtained by Argon Diluted Silane PECVD

Amorphous Nanocrystalline Transition in Silicon Thin Films Obtained by Argon Diluted Silane PECVD

... The Plasma-Enhanced Chemical Vapor Deposition (PECVD) method is widely used compared to other methods to de- posit hydrogenated silicon Si:H. In this work, a systematic variation of deposition parameters ...

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Article Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge

Article Low Concentration Response Hydrogen Sensors Based on Wheatstone Bridge

... PdNi film hydrogen sensor with Wheatstone Bridge structure was designed and fabricated with micro-electro-mechanical system (MEMS) ...alloy film resistors: two of them were shielded with silicon ...

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Thin Film Silicon Photovoltaics: Characterization of Thin Film Deposition and Analysis of Enhanced Light Trapping from Scattering Nanoparticle Arrays

Thin Film Silicon Photovoltaics: Characterization of Thin Film Deposition and Analysis of Enhanced Light Trapping from Scattering Nanoparticle Arrays

... for thin- film silicon solar cells to attain cost-competitiveness in the global energy ...quality thin-film silicon ...crystalline thin-film silicon devices ...

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IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition

IR Spectroscopic Study of Silicon Nitride Films Grown at a Low Substrate Temperature Using Very High Frequency Plasma Enhanced Chemical Vapor Deposition

... [4] Kakiuchi, H., Nakahama, Y., Ohmi, H., Yasutake, K., Yoshii, K. and Mori Y. (2005) Inves- tigation of Deposition Characteristics and Properties of High-rate Deposited Silicon Nitride Films Prepared by ...

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Electrical and Optical Properties of Ga-Doped Mg1-xZnxO System

Electrical and Optical Properties of Ga-Doped Mg1-xZnxO System

... Lauderdale, FL) was used to ablate the magnesium oxide-zinc oxide composite target. The output laser pulse exhibited a frequency of 10 Hz and a pulse duration of 25 ns. The energy density used in these studies was 3.5 - ...

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Effects of annealing on the electro optical properties of a Si:H thin films deposited by D C  and pulsed PECVD

Effects of annealing on the electro optical properties of a Si:H thin films deposited by D C and pulsed PECVD

... non- silicon atom present in the film is shown in figure ...the film refractive index showing that refractive index of these amorphous films are strongly related to the film density, more ...

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A Theoretical Interpretation of NEXAFS of a Deuterated Hexagonal Boron Nitride Thin Film

A Theoretical Interpretation of NEXAFS of a Deuterated Hexagonal Boron Nitride Thin Film

... In this research work, cluster dependence NEXAFS DV-Xα calculations are performed and the results of NEXAFS are supported the selective adsorption model of deuterium (hydrogen) on h-BN thin film though the ...

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Electron channelling contrast imaging for III-nitride thin film structures

Electron channelling contrast imaging for III-nitride thin film structures

... Heteroepitaxial growth on sapphire and silicon substrates is cheaper than growth on bulk GaN. However, heteroepitaxially grown nitrides suffer from a high density of extended defects such as threading dislocations ...

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Adaptive and Reconfigurable Architected Materials Driven by Electrochemistry

Adaptive and Reconfigurable Architected Materials Driven by Electrochemistry

... One of the most important motivations for architected materials is to build lightweight structural materials with tailored mechanical properties such as high stiffness, high strength, and high toughness. Significant ...

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Non contact Thin Layer Conductivity Measurement Based on the Conjugate Magnetic Eddy Current Sensor

Non contact Thin Layer Conductivity Measurement Based on the Conjugate Magnetic Eddy Current Sensor

... conducting composite membrane, anti-radiation conductive film included Dural, soft membrane can probe to test the in silico probe test method. The measured conductance is related to the probe contact resistance. ...

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Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD

Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD

... compared to germanium. Si also has the ability to form a native oxide layer to create a better semiconductor/dielectric interface than any other material. However, Si is also known as a poor light emitter, a result of ...

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Process and Properties of Nitride-based Thin Film Heterostructures

Process and Properties of Nitride-based Thin Film Heterostructures

... The low magnification <110> cross-section TEM image of epitaxial TaN/TiN/Si (100) in figure 2(a) shows the film quality from large area of the film. The thicknesses of TaN and TiN layers on Si(100) ...

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Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)

... amorphous silicon (a-Si:H) thin films and to acquire better understanding of this material by characterisation techniques using surface profiler, atomic force microscopy (AFM), UV spectrophotometer, Fourier ...

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