Thin films - Electric properties

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Magnetic and electric properties of stoichiometric BiMnO3 thin films

Magnetic and electric properties of stoichiometric BiMnO3 thin films

while other physical properties measured for the films var- ied across a wide spectrum. The films also exhibited non- optimum magnetic properties. Ferromagnetic transition temperatures and saturated magnetic moments were smaller than those reported for stoichiometric ceramic BiMnO 3 ; thus, multiferroicity has not yet been accurately

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Electrical Properties And Scaling Behavior Of Ago Thin Films

Electrical Properties And Scaling Behavior Of Ago Thin Films

For the electrical measurement the sintered disc was polishedto make both their faces flat and parallel and electroded by highpurity ultrafine silver paste. To overcome the effect of moisture,on electric properties.Capacitance (C), impedance (Z), phase angle (w) and conductance(G), of the sample was measured in the frequency range100 Hz–1 MHz at various temperatures using a computercontrolled LCR-meter . The complex electric modulus

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Electric field control of magnetization reorientation in Co/Pb (Mg1/3Nb2/3) PbTiO3 heterostructure

Electric field control of magnetization reorientation in Co/Pb (Mg1/3Nb2/3) PbTiO3 heterostructure

Co thin films was deposited on a PMN-PT (011) (thick- ness is 300 μm) substrate by radio frequency magnetron sputtering, as shown in Fig. 1a. The background pres- sure was lower than 5 × 10 -5 Pa. For the deposition of Co layers, a Co target, 75 mm in diameter and 3 mm in thickness was used as the sputtering target, and the argon gas was used as the ambient gas. The sputtering chamber was evacuated to a base pressure 0.2 Pa. The RF power was 50w. The thickness of Co layer was 20 nm. While sputtering, an Ar flow rate of 10 SCCM (SCCM denotes cubic centimeter per minute at STP). Sputtering angle of the film was 20° without applied field. Figure 1b shows the schematic drawing of the sputtering arrangement. The film thickness was mea- sured by the setback instrument (Vecco Dektak 8). The static magnetic properties were measured by vibrating sample magnetometer (VSM) and the dynamic magnetic properties were measured by in-plane ferromagnetic res- onance (FMR) measurements were performed in a JEOL, JES-FA 300 (X-band at 8.969 GHz) spectrometer. The microwave permeability measurements of the films were performed by a vector network analyzer (PNA E8363B) with micro-strip method.
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Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3

Physical Properties and Influence of the Tempering on Electric Properties Films Bi2Te3

Connection sulphides bismuth have valuable properties, in which combination are thermoelectric, magneto-optical and other properties of the semiconductor and the relevance of studies of the effect of external influences, stimulating structural changes - changes in the structural characteristics of thin amorphous semiconductor films halogen is predetermined with the prospects of making various devices, as well as their applications in optoelectronics [7, 8]. Significant impact on the structure and properties of films of semiconducting compounds having the condition of film formation, the nature and character of high external influences on nana scale thin amorphous layers.
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Optical and Electrical Properties of Pbs Thin Films Grown by Chemically Bath Deposition [CBD] at Different Lead Concentrations

Optical and Electrical Properties of Pbs Thin Films Grown by Chemically Bath Deposition [CBD] at Different Lead Concentrations

The deposition of PbS films was done in a reactivechemical bath prepared in a 100 ml beaker by asequentialaddition of solutions of 5 ml of 0.5 M lead nitrate as a source of Pb +2 , 5 ml of 2 Msodium hydroxide as source of alkaline medium, 6 ml of 1 M thiourea as source of S -2 and 2 ml of 1M tri-ethanolamine as a complexing agent. Solutions of 1M thiourea, 1M tri-ethanolamine and 1M sodium hydroxide were preparedfrom analytical grade chemicals. Lead nitrate solutions of varying concentration from 0.3M to 0.7M at intervals of 0.1M were also prepared. 5ml of lead nitrate was measured and poured into a 100ml beaker followed by 5ml of 2M sodium hydroxide and the mixture was thoroughly stirred using an electric stirrer to obtain a milky solution. This was followed by adding 6ml of 1M thiourea followed immediately by 2ml of 1M tri-ethanolamine while stirring continued for about two minutes to ensure uniformity of the mixture. The solution was topped with de-ionized water to a volume of 100 ml while stirring. A glass slide substrate was then inserted vertically leaning on the side of the beaker and the set up was maintained at room temperature for 120 minutes. Lead nitrate concentration was varied at intervals of 0.1 for the subsequent films from 0.3 - 0.7M of Pb +2 ion concentrations. Three substrates were vertically immersed intothe bath each time and remained undisturbed for 120 min and then subsequently retired from the bath atthe same time,cleaned and kept in a dark place for analysis. The resultant films were homogeneous, welladhered to the substrate, and specularly reflecting.Reflection and transmission spectra weremeasured at room temperature in the spectral range of 260–2000 nm (4.54–1.08eV)using NIR-VIS IR spectrophotometer DUC 3700instrument at ambient temperature. The electrical resistivity measurements were done using the Keithley2400 source meter interfaced with a computer.
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Study Of Electrical And Optical Properties Of Thin Films

Study Of Electrical And Optical Properties Of Thin Films

electrode and has a transparent electrode for a display, a solar cell, a transparent warm element, and an electric element. The SnO2 thin film is fabricated by shower, synthetic vapor testimony, and sputtering. It can be fabricated in huge sums by sputtering, making the items more affordable. Notwithstanding, those produced by sputtering have defects caused by variety in temperature, affidavit time, measure of oxygen in the chamber, measure of plasma created (attributable to the adjustment in the supply control power), and vacuum in the chamber. The underlying condition of the substrate when a thin film develops can influence the electrical and optical properties of the thin film. Along these lines, so as to enhance the electrical and optical properties of the SnO 2 thin film, it is
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Morphological and Electrochemical Properties of LiMn2O4 Thin Films

Morphological and Electrochemical Properties of LiMn2O4 Thin Films

crushed, pressed and sintered at 800 o C to get quite robust targets and used for the growth of films. The typical substrates i.e. Si wafers were cleaned using HF solution. The target was rotated at 10 rotations per minute with an electric motor to avoid depletion of material at any given spot. The laser used in these experiments is the 248 nm line of a KrF excimer laser (Luminics PM 882) with 10 ns pulse with a repetition rate of 10 Hz. The rectangular spot size of the laser pulse was 1x3 mm and the energy 300 mJ. The power density at the target surface was 10 Jcm -2 . The target substrate distance was 4 cm [31-55]. The deposition temperature was maintained with thermocouple and temperature controller. During the deposition pure oxygen was introduced into the deposition chamber and desired pressure was maintained with a flow controller.
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Electric Field Oriented Nanostructured Organic Thin Films with Polarized Luminescence

Electric Field Oriented Nanostructured Organic Thin Films with Polarized Luminescence

It can be seen that both molecules are really linear, but their aliphatic tails are essentially skewed from the mo- lecular axes. M2 is practically flat, but phenyl rings of M1 are rotated with respect to each other and this molecule is not flat. Non-planar structure and methyl group can es- sentially prevent M1 molecules from aggregation. We have also calculated dipole moments of these molecules. Dipole moment of M1 was found to be 2.17 D, while dipole mo- ment of M2 molecule is about zero. As a result, different effects of electric field can be expected. M1 molecules are considerably larger and have large dipole moment; there- fore, they can be much more sensitive to the direction of the applied electric field than M2. Also, calculation showed that interaction between molecules does not have essential influence on the molecular ordering, though non-covalent interactions can strongly affect molecule packing as well as optical and electrical properties [20].
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Electronic Transitions And Optical Properties Of Zno: In Thin Films

Electronic Transitions And Optical Properties Of Zno: In Thin Films

Abstract—Undoped Zinc Oxide and Indium doped Zinc Oxide with different doping percentage (1 - 7 step 2) % have been deposited on a glass substrates at a substrate temperature of (400 ͦ C) . The thickness of the deposited films found to around (300±25) nm. The optical properties were achieved by recording absorbance and transmittance in the wavelengths range (400 – 900) nm. The optical energy gaps for the allowed direct transitions was calculated , and the value

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New Organic Thin Film Encapsulation for Organic Light Emitting Diodes

New Organic Thin Film Encapsulation for Organic Light Emitting Diodes

Organic Light-Emitting diodes (OLEDs) are considered as one of the most potential display technology today due to their low power consumption, low cost, and superior viewing ability [1] especially for their possibility to build flexible displays [2-6] as they are ultra-thin and light weight. Top emitting OLED devices are also becoming increasingly important because of the increase in aper- ture ratio (the ratio of actual emitting area to the total area of the pixel) obtained as compared to bottom emitter approach. However one obstacle to these developments is the susceptibility of these devices to water vapor and oxygen, which causes rapid degradation.
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Dip Coating Process Engineering and Performance Optimization for Three State Electrochromic Devices

Dip Coating Process Engineering and Performance Optimization for Three State Electrochromic Devices

military camouflage [10–19]. Electrochromic devices based on reversible electrodeposition are promising for application in light modulations owing to their simple sandwich-type structure and facile and low-cost fabrication. Their optical properties can be manipulated via deposition of metal (copper (Cu), bismuth (Bi), plum- bum (Pb), nickel (Ni), silver (Ag), etc.) onto transparent conducting electrodes under an applied electrical voltage and dissolution of metal back into electrolyte upon re- moval of the voltage [20–26]. Bismuth–copper (Bi/Cu) electrodeposition devices are widely used in information displays due to their rapid and reversible switching bet- ween black and transparent states enabled by the oxida- tion–reduction between Bi and Bi 3+ [9, 23–25]. Similarly,
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Tribological Properties of Multilayer TiN and MoS2 Thin Films

Tribological Properties of Multilayer TiN and MoS2 Thin Films

The TiN thin films were deposited by reactive radio frequency (RF) magnetron sputtering method on Al substrates. The deposition was carried out a pressure inside the chamber was maintained at 1x10 -6 Torr with the help of a multi-stage vacuum pump throughout the deposition time. After the required pressure was obtained, the vacuum chamber was purged with argon to remove any oxygen in the chamber. Then a mixture of Ar and N 2 gases (1: 1) were

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ABSTRACTS: April 197868-73

ABSTRACTS: April 197868-73

The Effect of Silver Interdiffusion on the Catalytic Activity of Thin Platinum and Palladium Films in the Reduction of Ag,S Films.. ABERMANN, Thin solid Films,.[r]

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Characterization of Cr/Ag metal thin films interaction with infra red laser

Characterization of Cr/Ag metal thin films interaction with infra red laser

Laser-metal interaction employed greater advantages to the performance of devices for electronics and optoelectronics devices. Silver (Ag) thin films were deposited onto silicon (Si) and glass substrates using direct current (DC) magnetron sputtering system. An under-layer, chromium (Cr) thin films that act as an adhesive layer were deposited on the glass substrate. Laser treatments on the samples were carried out at different laser energy under N 2 ambient in a pressure cube. It is found that the electrical, optical and morphological properties improved
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Novel nanostructured biomaterials: implications for coronary stent thrombosis

Novel nanostructured biomaterials: implications for coronary stent thrombosis

the eluted drug agents with cytostatic or cytotoxic effects on the proliferation of the smooth muscle cells on the arte- rial wall, as well as the polymeric stent reservoir for drugs, were found to disrupt the natural healing response of the endothelium. The latter is a living tissue that is antithrom- botic, inhibits leukocyte recruitment, and secrets dilatation factors such as nitric oxide and prostaglandin prostacyclin. Consequently, it is essential that the development of a suit- able stent material/surface takes into consideration control of its physicochemical properties for enhanced cellular endothelial cell growth. Another significant parameter, in order to minimize stent rejection, is the fact that direct contact between stent and blood may trigger activation of platelets and blood coagulation pathways leading to clot formation on the stent surface and arterial occlusion. 5 Thus, the functional-
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Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

Figure 1 shows XRD patterns of ZnO thin films as a function of substrate temperature. The samples are polycrystalline in nature which shows hexagonal crystal structure (JCPDS card no. - 01-075-1526) and it prefers the orientation along (002) plane [12]. The observed minor planes include (100) and (101). The optimum substrate temperature for the deposition of crystallized ZnO thin films is 400°C. At this temperature, atoms have optimum energy for chemical reaction and arrange along the preferred orientation of (002) [12]. The highest intensity of lattice plane (002) is assigned to the crystal growth with preferential
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Antireflective Properties of Nano-Structured CeO 2 and CeO2 SiO 2 Composite Thin Films

Antireflective Properties of Nano-Structured CeO 2 and CeO2 SiO 2 Composite Thin Films

The multiple coatings exhibit high reflection (20%) in 450-750 nm wavelengths. The maximum transmittance of 85% is achieved in case of double layer coating while the minimum of 80% for single layer coating. Notwithstanding that the multilayer deposition enhances the thickness of the thin films; it is interesting to note that, the rate of increase in the thickness was found to be suppressed after the deposition of the third layer inspite of maintaining the unvarying conditions of deposition. This is due to fact that, when the thin film is pre-heated, the remaining residual solvent on the film surface restrain the further deposition of the film due to incomplete evaporation. The thickness and refractive index was determined by Envelope technique and are tabulated in Table I. The refractive index observed in the present work is found to be in close agreement with the experimental studies reported elsewhere [7].
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STUDY OF STRUCTURAL PROPERTIES OF MULTILAYER ZNS THIN FILMS

STUDY OF STRUCTURAL PROPERTIES OF MULTILAYER ZNS THIN FILMS

Zinc sulfide is also used as an infrared optical material, transmitting from visible wavelengths to over 12 micrometres. It can be used planar as an optical window or shaped into a lens. It is made as microcrystalline sheets by the synthesis from H2S gas and zinc vapor and sold as FLIR (Forward Looking IR) grade ZnS in a pale milky yellow visibly opaque form.This material when hot isostatically pressed (HIPed) can be converted to a water-clear form known as Cleartran (trademark). Early commercial forms were marketed as Irtran-2 but this designation is now obsolete. In this paper we have reported XRD, SEM, of the PANI on glass substrate and PANI on the ZnS thin film.
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Influence of Roughness on the Physicochemical Properties of ZnO Thin Films

Influence of Roughness on the Physicochemical Properties of ZnO Thin Films

[12] Tadatsugu Minami, Jun-ichi Oda, Jun-ichi Nomoto, Toshihiro Miyata; ―Effect of target properties on ransparent conducting impuritydoped ZnO thin films deposited by DC magnetron sputtering‖, Thin Solid Films, Volume 519, Issue 1, 29 October 2010, Pages 385-390. [13] Rafik Serhane, Samira Abdelli-Messaci, Slimane Lafane, Hammouche Khales, Walid Aouimeur, Abdelkadder Hassein-Bey, Tarek Boutkedjirt; ―pulsed laser deposition of piezoelectric ZnO thin films for bulk acoustic wave devices‖, Applied Surface Science, Volume 288, 1 January 2014, Pages 572-578.
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Optical Properties of Polycrystalline Zinc Selenide Thin Films

Optical Properties of Polycrystalline Zinc Selenide Thin Films

ZnSe is an important semiconductor material with a large band gap (2.7 eV), which has a vast potential use in thin film devices and as n-type windows layer for thin film heterojunction solar cells [1-5]. These films can be pre- pared by a variety of techniques like vacuum evaporation [6], sputtering, pyrolysis and chemical deposition tech- niques. [7,8]. The recent developments on the fabrication of the II-VI blue light emitting diodes or blue laser di- odes demand high quality ZnSe single crystal as a sub- strate for homoepitaxial growth. Similarly it is known that ZnSe differs from the other II-VI systems in symme- try. For example, when ZnSe is doped with phosphorous, C 3v symmetry is reported both by experiment and theory
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