thin silicon dioxide films
Effect of the Nd content on the structural and photoluminescence properties of silicon rich silicon dioxide thin films
... Nd-doped silicon-rich silicon oxide (SRSO) are reported as a function of the annealing temperature and the Nd ...The thin films, which were grown on Si substrates by reactive magnetron ...
8
Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide
... PSZT thin films deposited at substrate temperature of 700 ...these thin films were deposited was chosen to encourage thermally driven grain growth and the diffractogram ...the thin ...
5
Fabrication and characterization of silicon nitride thin film planar waveguides produced by RF magnetron sputtering technique
... of silicon dioxide upper and lower cladding layer was measured as n = ...of silicon nitride core layer was n ~ ...deposited films are usually high in ...
59
Development and characterization of Undoped Silicon Glass (USG) using chemical vapour deposition
... Abstract: Sub atmospheric chemical vapour deposition (SACVD) is a widely used technique in semiconductor integrated circuit (IC) manufacturing, especially to form inter-metal silicon (IMD) dioxide ...
8
Stability of Postannealed Silicon Dioxide Electret Thin Films Prepared by Magnetron Sputtering
... electret thin films for many applications, because these organic materials with low melting points have difficulty withstanding the high temperature heat treatment processes involved in device ...inorganic ...
5
Impact of annealing on structural and optical properties of CoPc thin films
... direction, then undergoes a phase transition into b- form in a preferential orientation (001) direction after annealing at 250 and 350°C. Furthermore it was shown that an increasing in the crystallite size (L) occurs ...
7
Dry phase detection of ultra thin multilayer poly electrolyte films using spectral reflectance technique
... However the thickness of PESA films is too thin to detect by this equipment as number of reflections depend on the thickness of deposited layer therefore oxidized silicon is used as a su[r] ...
7
Growth behavior of titanium dioxide thin films at different precursor temperatures
... Figure 6a, b shows the water contact angle with a change from being hydrophobic to being superhydrophi- lic at a precursor temperature of 75°C to 60°C. Sample A surface was observed to be hydrophobic with a contact angle ...
6
Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD
... Film thickness is obtained by using spectroscopic ellipsometer (SE). Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) were then used to probe the surface morphology of nc-Si ...
31
Electrical Characterization of Radiation Induced Defects in 3C-SiC.
... Numerous studies have already been performed on 3C-SiC to determine its mechanical properties. 3C-SiC is most commonly used for the fabrication of micro electromechanical systems (MEMS) due to its superior mechanical ...
109
Highly (200)-Preferred Orientation TiN Thin Films Grown by DC Reactive Magnetron Sputtering
... The TiN thin films were deposited on silicon substrates by DC reactive magnetron sputtering. The size of the chamber was 55cm (diameter)×34cm(height) and the chamber was pumped down to 1.0×10 -5 Pa ...
5
Reactively sputter-deposited titanium oxide and barium silicon titanate thin films.
... n films d e p o s i t e d o n f u s e d q u a r t z 3 u b 3 t r a t e 3 w e r e p r e d i c t e d to have c o m p e t i t i v e S A W c h a r a c t e r i s t i c s ...n films w e r e f a b r i c a t e d b y ...
218
Optical Properties of Nanocrystalline Silicon Thin Films in Wider Regions of Wavelength
... As light enter a medium, the loss of its intensity, if any, is caused by absorption. Portion of light that are not absorbed is said to be transmitted. Changes in deposition time and substrate temperature are found to be ...
8
Physical properties of nitrogen doped titanium dioxide thin films prepared by dc magnetron sputtering
... the films exhibited (101) of anatase phase with low ...the films crystallinity is ...the films regardless of the nitrogen partial pressures due to low chemical activity of N ...
6
Formation of Poly Si Films on Glass Substrates by Using Microwave Plasma Heating and Fabrication of TFT’s on the Films
... [5] Arai, T., Nakaie, H., Kamimura, K., Nakamura, H., Ariizumi, S., Ashizawa, S., Ari- moto, K., Yamanaka, J., Sato, T., Nakagawa, K. and Takamatsu, T. (2016) Selective Heating of Transition Metal Usings Hydrogen Plasma ...
6
Oxidative and carbonaceous patterning of Si surface in an organic media by scanning probe lithography
... oxide layer of 1.7 to 2 nm, as measured by ellipsometer (data not shown). The formation and the geometry of the water meniscus is ruled by a number of factors including capillary forces, electric field gradients, ambient ...
9
Carrier transport in ultra thin nano/polycrystalline silicon films and nanowires
... nc-Si:H films using reflective high energy electron diffraction (RHEED) and transmission electron microscopy ...the films was measured using transmission-line test structure electrodes of ...
6
Degradation processes of platinum thin films on a silicon nitride surface
... of thin platinum films as a function of the temperature is due to degradation effects that are accelerated by high ...nm thin platinum films adhered to a silicon-nitride surface using ...
44
The origin of photoluminescence from thin films of silicon-rich silica
... from silicon-based devices is an impor- tant research area in the electronics industry, as the realiza- tion of such devices would make it possible to capitalize on the broad base of knowledge available and to ...
10
Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate
... on thin silicon dioxide combined with the silicon ...The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical ...
6