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Tight–binding model for bilayer graphene

Tuning anti-Klein to Klein tunneling in bilayer graphene

Tuning anti-Klein to Klein tunneling in bilayer graphene

... In this paper, we employ an edge-connected hBN-BLG- hBN heterostructure (hBN for hexagonal boron nitride) to investigate quasiparticle tunneling in a lateral pnp junction. We benefit from an advanced sample fabrication ...

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Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model

Conductance of Graphene Nanoribbon Junctions and the Tight Binding Model

... of graphene. Most simulations of charge transport within graphene-based electronic devices assume an energy band structure based on a nearest-neighbour tight binding ...of graphene ...

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Next Nearest Neighbor Tight Binding Model of Plasmons in Graphene

Next Nearest Neighbor Tight Binding Model of Plasmons in Graphene

... in graphene. The nearest-neighbor tight-binding model was previously considered to calculate the plasmon spectrum in graphene ...next-nearest-neighbor tight-binding ...

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Generalized tight-binding transport model for graphene nanoribbon-based systems

Generalized tight-binding transport model for graphene nanoribbon-based systems

... to model both AGNR and ZGNR ...TB model 共set D, Table I兲 that adequately reproduces the band-structure features about the Fermi energy and gap trends of the ab initio results—note that the gaps for both the ...

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Tight-binding model in the theory of disordered crystals

Tight-binding model in the theory of disordered crystals

... For calculations of energetic spectrum, free energy and electroconductivity of disordered crystals in our work developed multi scattering theory based on Green’s functions. Electronic correlations in crystal are ...

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The topology and robustness of two Dirac cones in S-graphene: A tight binding approach

The topology and robustness of two Dirac cones in S-graphene: A tight binding approach

... However, modern scientific advances have discarded the above mentioned fact 4,12,13 . Alternatively, Wang et al. 14 have critically explored the conditions for the emergence of Dirac cones in 2D lattice. It is to note ...
Energy Dispersion Model using Tight Binding Theory

Energy Dispersion Model using Tight Binding Theory

... terials. Graphene has carriers that exhibit an effective "speed of light" (10 6 m/s) in the low energy range of ...monolayer graphene exist - A Graphene nano-ribbon is a sheet of graphene of ...

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Empirical tight-binding model for titanium phase transformations

Empirical tight-binding model for titanium phase transformations

... our model to total energies and electron eigenval- ues for several crystal structures over a range of volumes to produce a transferable model for the study of the ␣ → ␻ transformation in ...resulting ...

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Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight binding π bond model

Quantum transport simulations of graphene nanoribbon devices using Dirac equation calibrated with tight binding π bond model

... in graphene nanoribbon (GNR) devices using the non-equilibrium Green’s function approach (NEGF) based on the Dirac equation calibrated to the tight-binding π- bond model for ...the ...

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Resonant scattering by magnetic impurities as a model for spin-relaxation in bilayer graphene

Resonant scattering by magnetic impurities as a model for spin-relaxation in bilayer graphene

... our model makes a specific prediction of reversing the increase of the spin-relaxation rate in graphene bilayer with increasing carrier density, at high densities, accessible ...

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Scaling approach to tight binding transport in realistic graphene devices:the case of transverse magnetic focusing

Scaling approach to tight binding transport in realistic graphene devices:the case of transverse magnetic focusing

... the tight-binding pa- rameters for real graphene 10 , namely the hopping energy t 0 and the lattice spacing a 0 , are replaced with rescaled ones, ˜ t 0 and ˜ a 0 , such that the bulk band structure ...

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Observation of Anomalous Resistance Behavior in Bilayer Graphene

Observation of Anomalous Resistance Behavior in Bilayer Graphene

... following model for bilayer gra- phene: R bilayer = R C − bilayer + R sr ‐bilayer , where R C − bilayer and R sr ‐ bilayer are the resistance due to the Coulomb and short- ...

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Pump-induced terahertz anisotropy in bilayer. graphene

Pump-induced terahertz anisotropy in bilayer. graphene

... substrate index of n = 3, E S ' 89 kV cm −1 . Note that this scaling parameter is relatively sensitive to the scattering time, which is one reason why we find a rather strong dependence on the scattering time in our full ...

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Ultrafast dynamics of massive Dirac fermions in bilayer graphene

Ultrafast dynamics of massive Dirac fermions in bilayer graphene

... In view of the disputed character of the electronic structure of BLG and the role of possible in-gap states, we should also point out that the spectral function fits and the data analysis in Fig. 3 are perfectly ...

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Single layer and bilayer graphene quantum dot devices

Single layer and bilayer graphene quantum dot devices

... The relaxation dynamics of excited states of graphene QDs is investigated. Finite-bias spectroscopy measurements unveil the excited state spectrum of the device. Long and narrow constrictions are used as tunneling ...

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Gaussian polarizable-ion tight binding

Gaussian polarizable-ion tight binding

... Gaussian Tight Binding (GTB) model gives molecular polarizabilities in excellent agreement with experimental data for hydrocarbons, having errors of the same order as DFT using the PBE 4 exchange- ...

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Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab

Band structure calculation of the semiconductors and their alloys by Tight Binding Model using SciLab

... The tight binding model is a very strong and interesting approach to solve the electronic band ...the tight binding model is that it picks out band picture of the whole material ...

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Valley polarized tunneling currents in bilayer graphene tunneling transistors

Valley polarized tunneling currents in bilayer graphene tunneling transistors

... We model the latter using a Lorentzian shape with the same full width at half maximum for all Landau levels, 2 meV and 4 meV for B = 1 T and B = 4 T, respectively, following previous experimental works [9,41] and ...

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Mapping local heterogeneity in open twisted bilayer graphene devices

Mapping local heterogeneity in open twisted bilayer graphene devices

... In previous STM studies, two different methods have been used to determine the local twist angle. First, one can determine the twist angle using three neighboring moiré lattice sites in real space. The distances between ...

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Self-heating and nonlinear current-voltage characteristics in bilayer graphene

Self-heating and nonlinear current-voltage characteristics in bilayer graphene

... theoretical model the gate potential is more strongly screened by the transport electrodes: even for the long sample the par- allel plate limit is not fully ...

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