Wafer Bonding
Materials integration for high-performance photovoltaics by wafer bonding
... structures, wafer bonding enables novel photovoltaic devices that have a greater number of subcells to improve the discretization of the solar spectrum, thus extending the efficiency limit of the ...
303
Effect of nanotopogranphy in direct wafer bonding: modeling and measurements
... direct wafer bonding. For a standard hydrophilic bonding process, the work of adhesion is on the order of 100 mJ/m , while in hydrophobic bonding the work of adhesion is typically between 1 ...
8
Low-cost high-efficiency solar cells with wafer bonding and plasmonic technologies
... oxygen after the 600 o C annealing corresponds to a layer with thickness of around 1 nm, which is a reasonable value to induce tunneling current to enable one to obtain Ohmic heterointerfaces, perhaps with some oxide ...
205
Heterogeneous integration by adhesive bonding
... the wafer level transfer with adhesives is ...one wafer to multiple LSI wafers are described to cost effective production of different size MEMS chip from LSI ...the bonding and ...carrier ...
10
Fabrication of wafer level thermocompression bonding
... It is important to quantify the bond quality in order to de- velop and improve the bonding process. Resistance testing is one approach, although in bonds involving conductive mate- rials, resistors could still be ...
7
Novel thin GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
... In this study, novel thin-GaN-based ultraviolet light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection techniques. Placing ...
8
Research Progress of Bonding Agents for Nitramine Composite Solid Propellants
... the bonding effect of NPBA were determined by the following three points: 1, ensuring that NPBA and premixed slurry were dissolved into one; 2, after adding nitramine fillers, the mixing temperature should be no ...
7
Adoption of Hybrid Dicing Technique to Minimize Sawing Induced Damage during Semiconductor Wafer Separation
... silicon wafer separation can be more effectively suppressed by the adoption of hybrid dicing (a duel process that uses laser ablation prior to mechanical sawing) than single dicing, such as ...the wafer ...
5
Re-evaluating the Frankfurt isothermal static diffusion chamber for ice nucleation
... collection, wafer transport and storage, which makes it suited as a platform for a network of sampling sta- ...sealed wafer holders at ambient ...longer wafer storage ...by ...
12
Automated Calibration of RF On Wafer Probing and Evaluation of Probe Misalignment Effects Using a Desktop Micro Factory
... The setup shows its versatile usability for on-wafer contact probing. The implemented algorithms are validated and the efficiency of the calibration is improved. The calibration repeatability of the automation was ...
7
Wafer Stage Motion Control
... the wafer surface. The resist in the exposed areas of the wafer surface is soluble in a particular solvent and thus can be ...the wafer is developed, the pattern on the reticle is transferred to the ...
5
Characterization of wafer level thermocompression bonds
... In the model, the left edge of pad 1 is coincident with the axis of symmetry while pad 11 is closest to the diesaw alley. Fig. 10 shows that the average stress per pad is not uniform from the center of the section to the ...
9
SiGe HBTs on Bonded Wafer Substrates
... Fig. 3 shows a comparison of transistor Gummel plots from four representative wafers with bulk ([10) and SOI ([6, 8, 9) substrates. Wafers [6, 8, 10 contain HBT devices and [9 is an all-Si control device. We consider ...
6
The Influence of Alternative Electrode Configurations and Process Integration Schemes on IGZO TFT Operation
... extracted parameters for the two treatments can be seen in Table 3.3. Device results are missing for the oxidized silicon substrates because of an error in fabrication that resulted in the deposition of two source/drain ...
94
Investigation of Precision Grinding Process for Production of Silicon Diaphragms
... After the grinding stage and before removal of the po- rous silicon, the amplitude of bending was measured. It was observed that the presence of porous silicon during grind- ing strongly suppresses diaphragm bending. ...
10
Alternative-Current Electrochemical Etching of Uniform Porous Silicon for Photodetector Applications
... The effect of increasing etching current density on the morphological properties of PS layer was investigated. The FE-SEM image of Fig. 4a of PS etched at a current density of 20 mA/cm² exhibits two regions on the ...
13
The role of thermal energy accommodation and atomic recombination probabilities in low pressure oxygen plasmas
... In this work a two-dimensional, modular, fl uid-kinetic simulation code, the hybrid plasma equipment model ( HPEM ) has been used to model a planar inductively coupled plasma reactor. The geometry of the simulation domain ...
14
On the complexity of Wafer to Wafer Integration
... Abstract. In this paper we consider the Wafer-to-Wafer Integration problem. A wafer can be seen as a p -dimensional binary vector. The input of this problem is described by m multisets (called ...
20
Amalan dan prestasi dalam perolehan elektronik
... affects wafer polishing is wafer ...individual wafer, equally critical is the variation of such characteristics between wafers within a compartment as well as those between compartments in the whole ...
24
Methods of Oil Drilling Sensor for High Temperature and Vibrations
... which is they have wanted to substitute and use solutions which are currently available in the market hence easy to integrate. An important solution advised by the Engineers of Journal of Petroleum Technology (JPT) ...
7