• No results found

[PDF] Top 20 Development and Characterization of a GaAs nipi Superlattice Solar Cell

Has 10000 "Development and Characterization of a GaAs nipi Superlattice Solar Cell" found on our website. Below are the top 20 most common "Development and Characterization of a GaAs nipi Superlattice Solar Cell".

Development and Characterization of a GaAs nipi Superlattice Solar Cell

Development and Characterization of a GaAs nipi Superlattice Solar Cell

... the development of a nipi solar cell, and the potential use of the device for multiple applications, there is significant need to explore it’s ...a nipi solar cell is much ... See full document

176

Growth and characterization of silicon nanowires for solar cell applications

Growth and characterization of silicon nanowires for solar cell applications

... cheap solar cells has become an important goal of ...generation solar cell, which would allow the reduction of device production and material costs, as well as for the development of the new ... See full document

196

Electrical characterization of cuinse2 thin films for solar cell applications

Electrical characterization of cuinse2 thin films for solar cell applications

... One of the leading examples of photovoltaic cell is CIS/CIGS based solar cell. CIS absorber layer having chalcopyrite crystal structure with optimal band gap 1.05 eV and high optical absorption ... See full document

5

Optical and electrical characterization of ZnS:Sn thin films for solar cell application

Optical and electrical characterization of ZnS:Sn thin films for solar cell application

... the development of cost effective thin films deposited techniques, especially in the field of photovoltaic technology, for preparation of quality alternative window layers for devices over large areas in order to ... See full document

7

Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

... the cell design standpoint, it will be necessary to gain further advantages with these devices with proper cell design and comparisons to equivalent baseline/control ...the superlattice and emitter ... See full document

162

Low field electron transport in a GaAs/GaAlAs superlattice

Low field electron transport in a GaAs/GaAlAs superlattice

... calculated the Hall factors. We find two independent Hall factors both o f which remain close to one. 6.2 P r o s p e c ts for fu rth er d e v elop m en ts We have tried to develop a simple formalism to calculate the low ... See full document

116

Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell

Modeling and Simulation of GaSb/GaAs Quantum Dot for Solar Cell

... conventional solar cell n / p by several methods of growth (Chemical Beam Epitaxial: CBE, Stranski-Krastinow, Metal Organic-Chemical Vapor Deposition: MOCVD………) [1], which results in the quantization of ... See full document

9

Strained Layer Superlattice Solar Cells

Strained Layer Superlattice Solar Cells

... al 67,68 in a 2-junction device, this approach has been successfully developed by many for several materials systems. (See Figure 1.1) Initially, connecting junctions in series was problematic because stacking two ... See full document

180

Characterization of type-II GaSb quantum rings in GaAs solar cells

Characterization of type-II GaSb quantum rings in GaAs solar cells

... of solar cells In solar cells the absorption of photons, which results in the generation of the charge carriers and their subsequent separation take place in semiconductor ...a solar cell. As ... See full document

160

THE EFFECTS OF N-GAAS SUBSTRATE ORIENTATIONS ON THE ELECTRICAL PERFORMANCE OF PANI/N-GAAS HYBRID SOLAR CELL DEVICES

THE EFFECTS OF N-GAAS SUBSTRATE ORIENTATIONS ON THE ELECTRICAL PERFORMANCE OF PANI/N-GAAS HYBRID SOLAR CELL DEVICES

... polymer/(100) GaAs as compared to the polymer/(111)B GaAs device ...(111)B GaAs substrate orientation creates lower surface state density and recombination rate at the polymer/GaAs interface ... See full document

5

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

Silicon quantum dot superlattice solar cell structure including silicon nanocrystals in a photogeneration layer

... The solar cells using Si-QDSL as an absorber layer were also fabricated. The schematic of the solar cell structure is shown in Figure 1. The fabrication process is referred as follows. A ... See full document

7

An optimized structure for enhancing optical absorption of solar energy inelliptical gaAs nanowire array solar cell

An optimized structure for enhancing optical absorption of solar energy inelliptical gaAs nanowire array solar cell

... Keywords: solar cell; GaAs; nanowire array; solar energy; optical absorption INTRODUCTION If present trend continues, in the year 2025, the global population is likely to reach eight billion ... See full document

6

Type II GaSb/GaAs Quantum Ring Intermediate Band Solar Cell

Type II GaSb/GaAs Quantum Ring Intermediate Band Solar Cell

... reference cell value, and full recovery should be achieved in an ideal ...reference cell reaches a maximum of ...curve characterization, the recombination process mechanisms were identified in each ... See full document

147

Modeling Multiple Quantum Well and Superlattice Solar Cells

Modeling Multiple Quantum Well and Superlattice Solar Cells

... GaAsP/InGaAs/GaAs solar cell is optimized to reach the maximum performance by evalu- ating the current-voltage curves under ...concentrator cell based on a SB-QWSC middle ... See full document

11

Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell

Characterization of (CIGS)/(CdS) Hetrojunction for Solar Cell

... CIGS/CdS solar cells were measured when illuminated with 1000 W mG 2 , the efficiency were calculated before and after annealing with temperature 100 200 and 300°C for one hour in vacuum ... See full document

6

MEASUREMENT INDUCED SOLAR CELL DEFECT CHARACTERIZATION

MEASUREMENT INDUCED SOLAR CELL DEFECT CHARACTERIZATION

... Figure 2. Laser beam induced current map of selected solar cell sample part (T = 298 K). 3.2. L IGHT EMISSION FROM BIASED SAMPLE The same area of Fig. 1 was tested for light emission. The reverse bias of ... See full document

5

High Efficiency Tandem Solar Cell based on InGaP and GaAs for Sustainable Energy Applications

High Efficiency Tandem Solar Cell based on InGaP and GaAs for Sustainable Energy Applications

... Keywords Solar Cell, InGaP, ...junction solar cell gained more attention in the last twenty years ago, usually these cells created from more than one p-n junction, and various materials may be ... See full document

5

Low field transport properties of a GaAs/Ga[sub]1 xAl[sub]xAs superlattice

Low field transport properties of a GaAs/Ga[sub]1 xAl[sub]xAs superlattice

... Figure 5.4a shows rxyz against Fermi level. As for the acoustic phonon calculation, the Hall factor rxyz remains close to 1 as the Fermi level is varied. What the graph does show is that in this case the relaxation time ... See full document

137

High-performance GaAs/AlAs superlattice electronic devices in oscillators at frequencies 100–320 GHz

High-performance GaAs/AlAs superlattice electronic devices in oscillators at frequencies 100–320 GHz

... Device fabrication followed the same process steps described in Ref. 9, but somewhat smaller SLEDs, with nomi- nal diameters of 15–35 lm, were selected for packaging and RF testing. SLEDs were mounted in the same type of ... See full document

6

Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice

Room temperature passive mode locked laser based on InAs/GaAs quantum dot superlattice

... Competing interests The authors declare that they have no competing interests. Authors ’ contributions MS supervised the project and provided laser structures and drafted the manuscript. MB carried out experimental ... See full document

5

Show all 10000 documents...