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[PDF] Top 20 Development of Zn-IV-Nitride Semiconductor Materials and Devices

Has 10000 "Development of Zn-IV-Nitride Semiconductor Materials and Devices" found on our website. Below are the top 20 most common "Development of Zn-IV-Nitride Semiconductor Materials and Devices".

Development of Zn-IV-Nitride Semiconductor Materials and Devices

Development of Zn-IV-Nitride Semiconductor Materials and Devices

... semiconducting materials often result in low electron and hole mobilities and high recombination rates, as carriers do not have ordered lattices to travel ... See full document

109

Materials Development for Gallium Nitride Power Devices

Materials Development for Gallium Nitride Power Devices

... electronic devices had focused on materials and heterostructures grown in the Ga-polar direction 6 , N-polar HEMTs, first demonstrated only a decade ago 7 , offer several key advantages, especially for high ... See full document

140

DEVELOPMENT OF ANTI-FOULING MATERIALS FOR BLOOD- CONTACTING DEVICES

DEVELOPMENT OF ANTI-FOULING MATERIALS FOR BLOOD- CONTACTING DEVICES

... CHAPTER IV CONCLUSION The hydrophobicity of silicones and PUs results in poor resistance to protein adsorption, resulting in platelet adhesion and thrombus ... See full document

32

Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices

Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices

... Synapses are responsible for all the computation and memory in the brain. Therefore, mimicking the functionalities of the biological synaptic connection lies at the heart of the development of brain-inspired ... See full document

Nitride Semiconductor Technology

Nitride Semiconductor Technology

... The development of GaN-based power amplifiers for RF, microwave, and mm-wave applications would have not been possible without an intense research on the stability and reliability ...switching devices, the ... See full document

30

Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices

Atomic and Electronic Structure of Interfaces in Materials Systems for Future Semiconductor Devices

... This development allows now not only the production of such devices as heterojunction bipolar transistors, modulation-doped field effect transistors, resonant tunneling diode, and photodetectors, but also ... See full document

116

Semiconductor Devices and Electronic World

Semiconductor Devices and Electronic World

... the devices in use were invented decades ago and that design techniques appearing in texts as far back as the 1930s are still in use, we realize that most of what we see is primarily a steady improvement in ... See full document

11

Carbon Nitride and Conjugated Polymer Composite Materials

Carbon Nitride and Conjugated Polymer Composite Materials

... the development of next generation photovoltaics are new materials and methods for the fabrication of solar devices on a large scale and at a low ...the materials costs, as well as the ability ... See full document

208

Global Semiconductor Packaging Materials Outlook

Global Semiconductor Packaging Materials Outlook

... Increased functionality in a smaller and smaller space has driven the development of CSPs, including stacked die packages and wafer level packages. An increasing number of devices are shipping in WLP. The ... See full document

6

Gallium nitride processing for high power microwave devices

Gallium nitride processing for high power microwave devices

... the materials were in the microwave part o f the ...quicker development time than SiC devices, which were initially thought to be competitive with the III-nitrides in the low GHz region but will now ... See full document

291

Supramolecular Devices and Materials

Supramolecular Devices and Materials

... Previous studies have used peptide-peptide interactions to assemble artificial binding sites, 179-182 for example with helical bundles that fold to give a zinc binding site, 183 bundling of -peptides to give ... See full document

308

Electron and Ion-beam Characterization of Nitride Semiconductor Devices.

Electron and Ion-beam Characterization of Nitride Semiconductor Devices.

... 47 They further performed PL studies on the same samples, and concluded that polarization effects, not segregation effects, dominated the optical properties of the QWs. However, the QWs grown in this study varied from ... See full document

401

Terahertz Generation in Submicron Nitride-based Semiconductor Devices

Terahertz Generation in Submicron Nitride-based Semiconductor Devices

... 1.2 Streaming Regime in III-nitrides In Chapter 2, the results of a Monte Carlo simulation of III-nitride semiconductors in the streaming regime are presented. The model is used to analyze the carrier dy- namics ... See full document

113

Novel dilute nitride semiconductor materials for mid infrared applications

Novel dilute nitride semiconductor materials for mid infrared applications

... presented in the previous chapter led to good quality InAsN in which the nitrogen can be increased up to 2.52 % N, causing an increase in the lattice mismatch and a drastic reduction of the bandgap. Emission wavelengths ... See full document

231

Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on state resistance

Characterisation and modeling of Gallium nitride power semiconductor devices dynamic on state resistance

... power semiconductor devices, resonant power conversion, and instrumen- ...power semiconductor devices, power device packaging, reliability, thermal management, power module technologies, and ... See full document

12

Characterisation and modelling of gallium nitride
power semiconductor devices dynamic on state
resistance

Characterisation and modelling of gallium nitride power semiconductor devices dynamic on state resistance

... [12] D. Jin and J. Del Alamo, “Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors,” Electron Devices, IEEE Transactions on, vol. 60, pp. 3190–3196, Oct 2013. [13] G. ... See full document

12

Formation of Embedded Nitride Semiconductor Nanocrystals.

Formation of Embedded Nitride Semiconductor Nanocrystals.

... 6.2 Suggestions for Future Work In Chapters 3-5, we presented methods for controlling the size, crystalline phase, and lateral position of InN and GaN nanocrystals. Embedded GaN or InN nanocrystals were formed via ion ... See full document

176

Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices

Rare-Earth Doped Wide Bandgap Oxide Semiconductor Materials and Devices

... may prove particularly interesting for high-power lasers as the presence of substitutional Eu 3+ ions did not alter the local structure of the host, which suggests that the thermal properties of Gd 2 O 3 may not ... See full document

229

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

... A semiconductor material comprising rhombohedrally aligned cubic semiconductor material (group IV, III-V, and II-VI), and alloys thereof, in diamond structure or cubic zinc- blende str[r] ... See full document

13

DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett Semicon Taiwan2015

DEVELOPMENTS & TRENDS IN FEOL MATERIALS FOR ADVANCED SEMICONDUCTOR DEVICES Michael Corbett Semicon Taiwan2015

... Linx Consulting 1. We help our clients to succeed by creating know ledge and developing unique insights at the intersection of electronic thin film processes and the chemicals industry 2. The know ledge is based on a ... See full document

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