Top PDF Electrical and Optical Properties of CeNi5 Nanoscale Films

Electrical and Optical Properties of CeNi5 Nanoscale Films

Electrical and Optical Properties of CeNi5 Nanoscale Films

(LGIN-503). Using quality factor modulation for the resonator, this laser source can function with an impulse length of 20–50 ns. Its laser burst frequency can be var- ied between 0.01 and 1 s. The energy density of the laser radiation can be varied using nonselective optical filters between 10 4 and 10 9 W/cm 2 . The pulse length that we used was 20 ns at a power of 3 × 10 7 W with a frequency of around 10 Hz. The focusing of the laser beam was done using a spherical lens. The focus spot on the sur- face of the bulk powder had a diameter of 100 μm. The substrates were positioned at an angle of 10°–15° from the perpendicular direction of the vapor source at a dis- tance of 3–5 cm. The angle and the distance influenced the thickness of the deposited thin films. A copper radi- ator was used to prevent the heating of the entire bulk CeNi 5 . The vaporization was made in a vacuum chamber
Show more

10 Read more

Study Of Electrical And Optical Properties Of Thin Films

Study Of Electrical And Optical Properties Of Thin Films

shower pyrolysis strategy. It has been accounted for as of now that the splash pyrolysis procedure is most appropriate for acquiring tin oxide films in vast territory substrate applications. Tin oxide films doped with antimony have intriguing electrochemical properties in various electrode forms, for example, low temperature electrochemical ignition of natural contaminations, ozone creation, and natural electro-union. Thus in the present examination, the antimony doped SnO2 films were set up by splash pyrolysis strategy and their electrical and optical properties are investigated.
Show more

14 Read more

Electrical and Optical Properties of IrO2 Thin Films Prepared by Laser ablation

Electrical and Optical Properties of IrO2 Thin Films Prepared by Laser ablation

thin films during the sputtering. The tapping mode AFM images were taken using a Digital Instruments Nanoscope III, multimode atomic force microscope. An Si tip with end tip diameter of 5–10 nm and 300 kHz resonant oscillating frequency were used for the tapping mode imaging. The resistivity was measured in the temperature range from 100 to 773 K by a van der Pauw method. The optical transmission was studied by using a UV-VIS-NIR spectrophotometer (Shimadzu UV-3101PC).

5 Read more

Download PDF

Download PDF

Among the transparent conducting oxides, fluorine-doped tin oxide (FTO) is the best material that could replace indium tin oxide (ITO) which is expensive due to the scarcity of element “indium” present in the compound [1]. It is an n-type, wide band gap semiconductor, with an average band gap of 3.5 eV and with special properties such as high transmittance in the visible range and high reflectance in the infrared, high carrier mobility, excellent electrical conductivity, and good stability at higher temperature [2]. FTO has a lot of applications which include: solar cells, protective electrodes, flat panel collectors, sensors, sodium lamps, and varistors. The microstructural, electrical and optical properties of FTO are sensitive to deposition techniques and conditions [3]. Extensive research has been focused so far on finding a way to overcome problems associated with FTO thin films through methods of fabrication and growth control [4-7]. The effect of several technological parameters such as doping concentration, solvent, substrate temperature, etc. on the properties of sprayed FTO films has been studied to determine the optimal deposition conditions to obtain as high electrical conductivity and optical transparency as possible [4-7].Numerous methods have been used for deposition of fluorine-doped thin films such as Thermal Evaporation [4, 9], Spray Pyrolysis [4,
Show more

10 Read more

Optical and Electrical Properties of Thin Films of Polyaniline and Polypyrrole

Optical and Electrical Properties of Thin Films of Polyaniline and Polypyrrole

of PPY, PANI and PT are obtained directly through anodic polymerization of their monomers in aqueous or organic electrolytes. The preparation of PPY by oxidation of pyrrole dates back to 1888 [22] and by electrochemical polymerization to 1957. This organic polymer in fact attracted general interest and was found to be electrically conductive in 1963. Polyaniline was first synthesized in 1862 [23] and has been extensively studied as a conducting polymer since the 1980s [9, 24]. Depending on the synthesis conditions, it can be obtained in several forms and different structures. The physical form of each of polypyrrole and polyaniline is usually as an intractable powder resulting from chemical polymerization or an insoluble film resulting from electropolymerization [25-27]. Electrochemical method has the merit of easy control of morphology and electrical properties, but there stills the commercial mass production problem. The calculation of excitation energies density functional theory one of the most successful methods in the investigation of optical absorption spectrum, and is developing rapidly as a cost-effective general procedure for studying physical properties of molecules [28, 29]. We have present in this paper our investigation of electrical, structural and optical properties
Show more

13 Read more

Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition

Owing to its excellent properties and abundance of the raw material, ZnO is a very attractive and prospective material for optoelectronic, electronic and piezoelectric device applications. 1 Various ZnO-based devices and microsystems have been developed such as ultraviolet light emitting diodes 2 , piezoelectric transducers 3 , transparent electronics 4 and so on. Various methods including sputtering(ref), pulsed laser deposition (PLD) (ref), chemical vapor deposition (CVD) (ref), spray pyrolysis and sol-gel process(ref) have been developed to deposit ZnO thin films. Generally, electrical and optical properties of ZnO films strongly depend on growth techniques and conditions, therefore it is very important to identify right growth technique for each application. 5-7
Show more

14 Read more

Effect of substrate temperature on optical and electrical properties of CdZnSeTe thin films prepared by spray pyrolysis technique

Effect of substrate temperature on optical and electrical properties of CdZnSeTe thin films prepared by spray pyrolysis technique

direct transition with optical band gap energies in the range 2.40eV- 2.44 eV. Optical properties such as extinction coefficient, refractive index and dielectric constant have been evaluated in wavelength range 350nm-1100nm. Electrical study was carried out by four probe method. Arrhenius behavior shows semiconducting nature of the films Values obtained by this method are found to be suitable to use the thin films for many scientific and technical applications such as solar cells, heat mirrors detectors etc.

5 Read more

Study of Electrical Optical and Structural Properties of Lead Selenide Sulphide Ternary Thin Films

Study of Electrical Optical and Structural Properties of Lead Selenide Sulphide Ternary Thin Films

For all compositions change in thermoelectric power at low temperature end is appreciably larger and very small changes at high temperature region except the compositions PbSe 0.3 S 0.7 , PbSe 0.4 S 0.6 and PbSe 0.5 S 0.5, have appreciable ther moelectric power changes over entire temperature range may be increasing or decreasing. From the Fig. 2–3 fermi energies have been evaluated from the linear variation of thermoelectric power verses reciprocal of temperature. These values are within ranges in between band gap energy values around 1.2 eV and evaluated thermally activation energies (0.24 - 0.44) eV. Optical Properties
Show more

8 Read more

Optical and Electrical Properties of Cu-Based Thin Films by Aerosol Assisted Chemical Vapor Deposition

Optical and Electrical Properties of Cu-Based Thin Films by Aerosol Assisted Chemical Vapor Deposition

dichloromethane, THF) (Knapp et al., 2014). However, these studies were not reporting the electrical and optical properties of Cu-based using AACVD method. So far in literature there there was no attempt to deposit single CuO and binary metal oxide of Al 2 O 3 and ZnO as a thin

7 Read more

Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

Structural and Optical Properties of ZnO Thin Films Deposited by Pyrolysis Spray Method: Effect of Substrate Temperature

Abstract: During the last decades, thin films of ZnO have given rise to a great interest, as transparent conducting oxides. This is due the optical and electrical properties of zinc oxide; it’s very high thermal and chemical stability, its non-toxicity as well as his abandonment in nature. The transparent conducting ZnO thin films were deposited on glass substrate by pyrolysis spray technique. Zinc acetate was used as starting solution with a molarity of 0.1 M. The structural and optical properties of the ZnO thin films were studied as a function of the substrate temperatures in the range of 100 to 400°C. Structural properties have been studied by X-ray diffraction (XRD) technique. The preferred orientation for ZnO thin films lies along (002) direction. From XRD data, the average crystallite size is determined from scherrer formula. The grain size is in the range of 10~27. The transmittance of the films is enhanced from 60 to 85% in the visible region in the range from 400 to 1100 nm by increasing the substrate temperature. The optical band gap energy attenuates from 3.67 to 3.25eV and whereas the Urbach energies of the films increase from 226 to 91.2 meV with increasing the substrate temperature from 100°C to 400°C.
Show more

6 Read more

Optical and Electrical Properties of Pbs Thin Films Grown by Chemically Bath Deposition [CBD] at Different Lead Concentrations

Optical and Electrical Properties of Pbs Thin Films Grown by Chemically Bath Deposition [CBD] at Different Lead Concentrations

Abstract: Lead sulphide [PbS] thin films were deposited on glass slide substrates using the chemical bath deposition [CBD] technique at room temperature for 120 minutes. Optical properties of the thin films were measured by spectrophotometer and then other optical and solid state properties were determined by simulating transmittance data in the wavelength range of 260–2000 nm using a software. The software made use of three optical models of simulation; the OJL model, the Drude model and the Kronig Kramer Relation [KKR] modelfor analysis. Complex dielectric function [ε], band gap [E g ], refractive index [n],
Show more

8 Read more

Optical and Electrical Properties of Vacuum Evaporated Sexithiophene Thin Films

Optical and Electrical Properties of Vacuum Evaporated Sexithiophene Thin Films

Optical and Electrical Properties of Vacuum Evaporated Sexithiophene Thin Films have been studied in the present work. The optical properties of Sexithiophene layers have been studied by absorption spectroscopy and fluorescence. From the optical studies, it has been observed that sexithiophene can be absorbed in the visible region and the electronic transitions have been occurred in the absorption spectra and fluorescence spectra. The weak fluorescence of 6T thin film would be an asset to the photovoltaic conversion of solar energy. The total conversion efficiency of the fabricated cells has been calculated as η = 0.7 10 -2 %. It is found that this very poor
Show more

8 Read more

Indium Doped Zinc Oxide Thin Films: Effect on Structural, Optical and Electrical Characteristics

Indium Doped Zinc Oxide Thin Films: Effect on Structural, Optical and Electrical Characteristics

Zinc oxide based thin films are better choice to ITO due to their excellent electrical and optical properties in the visible region. Zinc oxide is an extensively studied material, since it's electrical conductivity can be made high with high visible transmittance. It has a wide band gap of 3.37eV and exciton binding energy of 60mev. Transparent conductive oxide (TCO) such as ITO, ZnO thin films find applications in optoelectronic devices like solar cells, flat panel displays (eg touch panel displays), Organic light emitting diodes (OLED), and low e- windows [1-3]. Since vacuum techniques require sophisticated instruments and maintenance, because of its simplicity, chemical methods draw attention in the synthesis of good films. But both physical and chemical deposition techniques could be employed based on the requirement to
Show more

5 Read more

Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

Investigation of the structural, optical and electrical properties of Cu3BiS3 semiconducting thin films

The XRD spectrum of the film shows a clear pattern of single phase orthorhombic lattice structure, as shown in Fig.3(a). A number of extra peaks, associated with metallic molybdenum and bismuth are also observed, indicating the presence of Bi clusters. Raman spectra, measured at different points of the films at room temperature, consistently reveal four modes at 96, 125, 264 and 292 cm -1 as shown in Fig. 3(b). The dominant peak at 292 cm -1 has a full width at half maximum (FWHM) of 12 cm -1 .

7 Read more

Effects of Laser Radiation on the Optical and Electrical Properties of ITO Thin Films Deposited by RF Sputtering

Effects of Laser Radiation on the Optical and Electrical Properties of ITO Thin Films Deposited by RF Sputtering

Fig. 2 displays the optical transmittance and absorption spectral features of as-deposited and laser annealed ITO thin films at different energies. From Fig. 2a, the as-deposited film shows the transmittance of 91.8 % at 620 nm. Gradual improvement in transmittance spectra was achieved as the laser energy increases. A maximum transmittance of 96.5 % at 620 nm was obtained when 165 mJ Nd:YAG laser radiation was directed onto the surface of the as-deposited ITO films. The occurrence of high transmittance at this wavelength range is necessary for any electrode to serve as an antireflection coating[1], [26]. The continuous interfering fringes of the laser-treated samples from visible-infrared regions indicate good uniformity in the thin films. A slight decrease in absorption was observed as the value of laser energy increases as shown in Fig. 2b. This shows that the ITO films surface atoms absorption ability gradually reduces when ITO films were irradiated with increasing laser energy. This in return, improved and also allows the smooth passage of radiation intensity through the material.
Show more

6 Read more

Temperature Dependent Properties of Spray Deposited Nanostructured ZnO Thin Films

Temperature Dependent Properties of Spray Deposited Nanostructured ZnO Thin Films

The quality and properties of the spray deposited film highly depends on the various process parameters such as spray rate, substrate temperature, nozzle to substrate distance, quantity of spray solution, and precursor concentration. However, the most important parameter is the substrate temperature as it highly affects the film morphology. The higher the substrate temperature, the rougher and more porous are the films. If the temperatures are too low the films are cracked. In between, dense and smooth films can be obtained. The deposition temperature also influences the crystallinity, texture and other physical properties of the deposited films. The present study is focused on the influence of substrate temperature on structural, optical and electrical properties of zinc oxide films deposited by spray pyrolysis technique.
Show more

11 Read more

Effect of Solvent on the Optical and Electrical Properties of Poly (Vinyl Alcohol) Films

Effect of Solvent on the Optical and Electrical Properties of Poly (Vinyl Alcohol) Films

Dielectric loss (Ɛ'') is the direct measure of energy dissipated and its variation with applied frequency is displayed in Fig. 4. It generally contributes in the ionic transport and the polarization of the charge or the dipole. The very high values of Ɛ'' (of the order of 10 6 ) observed at lower frequencies for PF6, PF7 and PF8 can be attributed to the “free” charge motion within the material [15]. These values do not correspond to the bulk dielectric of the material, but are only due to the “free” charge build up at the electrode-electrolyte interface. At low frequencies, enough time is available for the charges to build up at the interface before the electric field is reversed. This contributes to the large apparent value of Ɛ''. When the frequency is increased, there was not sufficient time available for the build up of the charges at the interface but only for the build up of the charges at the boundaries of conducting species in the material and at the ends of conducting paths. This behavior leads to the “conductivity relaxation” phenomenon [15]. Moreover, the observed higher values of Ɛ'' indicate that these films (PF6, PF7 and PF8) may find their use in electromagnetic interference (EMI) shielding.
Show more

9 Read more

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition

The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.
Show more

8 Read more

Gamma Irradiation Effect on the Thermal Stability, Optical and Electrical Properties of Acrylic Acid/ Methyl Methacrylate Copolymer Films

Gamma Irradiation Effect on the Thermal Stability, Optical and Electrical Properties of Acrylic Acid/ Methyl Methacrylate Copolymer Films

The electrical measurements of all films were performed using a locally designed electrical circuit. An air drying type of silver paste was applied to the opposite surfaces of polymer samples in a sandwich configuration to en- sure good electrical contacts. For the DC measurements, the samples were placed by a special designed cell in an oven. The temperature of the samples was monitored using a K-type thermocouple attached with digital ther- mometer type Tri-Sense, Cole – Parmer, USA, with temperature resolution of 0.1 o C.The sample temperature

7 Read more

Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

Sol – Gel Spin Coated Cadmium Sulphide ‎Thin Films on Silicon (1 0 0) Substrates for ‎Optoelectronic Applications

technique on p-type Si (1 0 0) substrates. The effect of annealing on the structural, surface morphological, optical and electrical properties of the prepared films has been studied. The structural studies revealed that the spin coated films have preferential orientation along the (0 0 2) plane with hexagonal structure. Thermal annealing is found to remove the strain present in the CdS films. The Raman spectra showed that the narrowing in the peak has been attributed to an improvement of the crystallinity of CdS. PL spectra showed that the defect states are reduced at higher annealing temperature. FTIR spectrum showed that the characteristic peaks and valleys. The decrease in resistivity values were observed when the samples were annealed. The present study shows that CdS thin films coated on Si substrates proves to be a promising candidate for the fabrication of optoelectronic devices.
Show more

9 Read more

Show all 10000 documents...