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[PDF] Top 20 Frequency Noise Control of Heterogeneous Si/III V Lasers

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Frequency Noise Control of Heterogeneous Si/III V Lasers

Frequency Noise Control of Heterogeneous Si/III V Lasers

... phase noise directly affects the signal to noise ratio of the received ...the frequency noise near modulation sidebands (typically a few GHz to achieve high data rates) is especially crucial, ... See full document

148

High-Coherence Hybrid Si/III-V Semiconductor Lasers

High-Coherence Hybrid Si/III-V Semiconductor Lasers

... a frequency-discriminating scheme for the measurement of fre- quency noise in the configuration illustrated in figure ...hybrid lasers based on undercoupled resonators, as well as the significant ... See full document

194

Article Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

Article Ultra-Low-Loss Silicon Waveguides for Heterogeneously Integrated Silicon/III-V Photonics

... Another useful component that can be utilized with low-loss waveguides is a low-kappa (  ) Bragg grating. These gratings are widely used in filters, sensors, and semiconductor lasers as a wavelength selective ... See full document

13

Frequency Tuning Range Control in Pulsed Terahertz Quantum Cascade Lasers: Applications in Interferometry

Frequency Tuning Range Control in Pulsed Terahertz Quantum Cascade Lasers: Applications in Interferometry

... maximum frequency sweep. Frequency linearization in such applications is therefore limited to pulse widths of the order of the laser-submount thermal time ...swept frequency range to suit ... See full document

8

The Coherence Collapse Regime of High Coherence Si/III V Lasers and the Use of Swept Frequency Semiconductor Lasers for Full Field 3D Imaging

The Coherence Collapse Regime of High Coherence Si/III V Lasers and the Use of Swept Frequency Semiconductor Lasers for Full Field 3D Imaging

... shot noise [107] the dominant source of noise in the ...of noise in the ranging system is the linearity of the optical ...shot noise for a given average power received from the mirror I m and ... See full document

133

A Fundamental Approach to Phase Noise Reduction in Hybrid Si/III-V Lasers

A Fundamental Approach to Phase Noise Reduction in Hybrid Si/III-V Lasers

... Frequency noise PSD: Lasers are pumped CW by an ILX Lightwave LDX-3620 Ultra Low Noise Current Source ...the frequency-to-amplitude gain of the interferometer and the quadrature ... See full document

178

Design High Efficiency III–V Nanowire/Si Two Junction Solar Cell

Design High Efficiency III–V Nanowire/Si Two Junction Solar Cell

... In this paper, we report the electrical simulation results of a proposed GaInP nanowire (NW)/Si two-junction solar cell. The NW physical dimensions are determined for optimized solar energy absorption and current ... See full document

5

Sampled-data and reduced order controller implementation

Sampled-data and reduced order controller implementation

... The problem of controller order reduction aimed at preserving the closed-loop performance of a sampled-data closed-loop system is investigated in Chapter 4. A time-invariant system results from applying the fast sampling ... See full document

188

Yoke shaped MgO barrier magnetic tunnel junction sensors

Yoke shaped MgO barrier magnetic tunnel junction sensors

... Magnetoresistive devices have been widely used for magnetic sensing applications, for instance, speed, position, and angle detection in the automotive industry. 1,2 They are also promising candidates for biomagnetic ... See full document

5

Metamaterial/graphene amplitude and frequency modulators for the active control of terahertz quantum cascade lasers

Metamaterial/graphene amplitude and frequency modulators for the active control of terahertz quantum cascade lasers

... and frequency modulators have been implemented as external optoelectronic mirrors in external cavity configurations with terahertz quantum cascade lasers ...in frequency modulators yields ... See full document

10

Systematic Optimization of Phase Noise of Voltage-Controlled Oscillators for Millimeter-Wave Radar.

Systematic Optimization of Phase Noise of Voltage-Controlled Oscillators for Millimeter-Wave Radar.

... phase noise [ Xi16 ] [ Jia15 ] ...phase noise. Fifth, the capacitor can be used to couple fundamental frequency at the tank node resulting in a left-handed ring-type VCO [ LA10 ] , but four or more ... See full document

153

A model for Traffic noise prediction in heterogeneous traffic conditions

A model for Traffic noise prediction in heterogeneous traffic conditions

... A-weighted noise emitted of the individual vehicles plying on the roads is determined at six different measurement locations with an individual vehicle of each category running at its free ... See full document

5

Linewidth and phase noise characteristics of DFB fibre lasers

Linewidth and phase noise characteristics of DFB fibre lasers

... single frequency fiber lasers have been a topic of continued interest since the early work of Ball et al on Er-doped DBR (distributed Bragg reflector) fiber lasers 1 ...phase noise ... See full document

8

Yb doped femtosecond lasers and their frequency doubling

Yb doped femtosecond lasers and their frequency doubling

... these lasers are their lower average output powers (typically up to a few 10’s mW) and longer pulse durations of several 100’s femtoseconds for mode locking operation in comparison to those of solid-state ... See full document

201

Frequency doubled continuous wave dye lasers

Frequency doubled continuous wave dye lasers

... o v er th e ADP c r y s t a l . The c a v i t y arran g em en t was th e Z -shaped c a v i t y w ith th e c r y s t a l o r i e n t e d a p p r o p r i a t e l y f o r a s t i g m a t i c and coma ... See full document

281

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

Performance Evaluation of III-V Hetero/Homojunction Esaki Tunnel Diodes on Si and Lattice Matched Substrates

... group V species. Si and Be were used as n-and p-type dopants respectively which were calibrated using secondary ion mass spec- troscopy (SIMS) ...with V/III ratios of 5 and 7 were used for ... See full document

246

Characterization of 6 1 Å III V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

Characterization of 6 1 Å III V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxy

... and dark current measurements, GaSb p-i-n structures grown on GaAs and Si substrates using IMF.. arrays were compared with an equivalent structure grown lattice matched on native GaSb..[r] ... See full document

13

Low frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)

Low frequency flicker noise in a MSM device made with single Si nanowire (diameter ≈ 50 nm)

... flicker noise has been measured in a metal-semiconductor-metal (MSM) device made from a single strand of a single crystalline Si nanowire (diameter approximately 50 ...the noise measurement ... See full document

6

Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si.

Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si.

... mainly III-V materials on Si, has been studied extensively since the 1980s due to the potential technological importance of merging optoelectronic and Si technologies ... See full document

182

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Design and Characterisation of III-V Semiconductor Nanowire Lasers

... of lasers (or threshold power for optically pumped lasers) is necessary for commercial applications as a lower threshold translates to lower operating ...semiconductor lasers can be reduced by using ... See full document

200

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