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[PDF] Top 20 GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation

Has 10000 "GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation" found on our website. Below are the top 20 most common "GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation".

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation

GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 mu m operation

... The operation of Hellish device is based on the longitu- dinal injection of electron and hole pairs in their respective channels, due to the diffusion of both top contacts through all ... See full document

7

Optical Design Of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers For Communication Systems

Optical Design Of Dilute Nitride Quantum Wells Vertical Cavity Semiconductor Optical Amplifiers For Communication Systems

... conclusions, vertical cavity semiconductor optical amplifiers VCSOAs based GaInNAs/GaAs quantum wells QWs have been designed using MATLAB® ...are based on the theory of ... See full document

5

Vertical external cavity semiconductor lasers

Vertical external cavity semiconductor lasers

... central cavity mode multiplied by the cavity photon ...large cavity mode volume, is therefore a particularly sensi- tive semiconductor laser architecture for ...the 1-µm range. ... See full document

11

Optical gain in 1 3 μm electrically driven dilute nitride VCSOAs

Optical gain in 1 3 μm electrically driven dilute nitride VCSOAs

... devices based on this alloy has been fabricated and demonstrated ...are vertical cavity surface-emitting lasers (VCSELs) [4-6], vertical external cavity surface-emitting lasers [7,8], ... See full document

5

Ga0 35In0 65 N0 02As0 08/GaAs bidirectional light emitting and light absorbing heterojunction operating at 1 3 μm

Ga0 35In0 65 N0 02As0 08/GaAs bidirectional light emitting and light absorbing heterojunction operating at 1 3 μm

... Vertical-cavity semiconductor optical amplifiers (VCSOAs) at ...in optical com- munication systems ...particular GaInNAs/GaAs quantum well (QW)-based VCSOAs were ... See full document

5

Top Hat HELLISH VCSOA for optical amplification and wavelength conversion for 0 85 to 1 3μm operation

Top Hat HELLISH VCSOA for optical amplification and wavelength conversion for 0 85 to 1 3μm operation

... Vertical cavity semiconductor optical amplifiers (VCSOAs) are a topic of increasing interest [1-3] for applications in optical ...modified vertical cavity ... See full document

6

GaInNAs based Hellish vertical cavity semiconductor optical amplifier for 1 3 μm operation

GaInNAs based Hellish vertical cavity semiconductor optical amplifier for 1 3 μm operation

... Ohmic contacts are formed by diffusing Au/GeAu/Ni/ Au through all the layers and into the substrate, defining a simple bar-shaped sample, with 1-mm contact separation and 4.5-mm width. This is done by annealing ... See full document

7

A THEORETICAL STUDY OF MUTUAL COUPLING OF TWO SEMICONDUCTOR QUANTUM DOTS AND EVALUATION OF ITS PARAMETER

A THEORETICAL STUDY OF MUTUAL COUPLING OF TWO SEMICONDUCTOR QUANTUM DOTS AND EVALUATION OF ITS PARAMETER

... are semiconductor nanocrystals embedded in another semiconductor which presents a wide energy band gap between its valance and conduction ...reason semiconductor quantum dots are often referred to as ... See full document

13

Performance Evaluation of Wideband Semiconductor Optical Amplifier

Performance Evaluation of Wideband Semiconductor Optical Amplifier

... In the simulation of the proposed wavelength converter based on XGM effect in a wideband traveling wave SOA, we used available OptiSystem software. The physical features of the InP/GaInAsP SOA structure are listed ... See full document

7

Simulative Analysis of RSOA based Bi-Directional Radio over Fiber Communication System Employing CPFSK Technique

Simulative Analysis of RSOA based Bi-Directional Radio over Fiber Communication System Employing CPFSK Technique

... Moreover, optical fiber has capacity to handle high bit rate traffic and also provide massive bandwidth which makes it perfect for next generation networks ...in optical form between a central station and a ... See full document

8

Performance Analysis of SOA Using XPM Based Wavelength Converter for All Optical Networks

Performance Analysis of SOA Using XPM Based Wavelength Converter for All Optical Networks

... Studies on XPM-based wavelength converters in SOAs have been undertaken in much previous work. For example, Ye et al. [12] claimed that the performance of the converted signal depends on both the phase arm bias ... See full document

7

A THEORETICAL EVALUATION OF EIGENVALUES AS A FUNCTION OF APPLIED BIAS VOLTAGE OF TWO QDS WHEN THEY ARE TUNED INTO EXACT RESONANCE WITH ONE ANOTHER

A THEORETICAL EVALUATION OF EIGENVALUES AS A FUNCTION OF APPLIED BIAS VOLTAGE OF TWO QDS WHEN THEY ARE TUNED INTO EXACT RESONANCE WITH ONE ANOTHER

... Two semiconductor Quantum dots, Optical nano cavity, Cavity Quantum electrodynamics (CQED), Quantum optical non-linearties, Quantum confined Stark effects (QCSE), Photoluminescence ... See full document

14

High Data Rate Optical logic OR, and NOT Gates at Optimum Injection Current based on SOA MZI

High Data Rate Optical logic OR, and NOT Gates at Optimum Injection Current based on SOA MZI

... OR operation. The simplest case based on SOA- MZI is that in which no wavelength conversion is ...of operation, which is depicted in Figure ...OR operation between the two ... See full document

9

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

Operation of an optical in-well-pumped vertical-external-cavity surface-emitting laser

... external cavity, the reflectance and photoluminescence (PL) spectrum of the gain me- dium was recorded for normal incidence, as shown in ...micro- cavity resonances described above results in the main peak ... See full document

7

To Investigate the Characteristics Parameters of Semiconductor Optical Amplifier based on Wavelength Converters for all Optical Networks

To Investigate the Characteristics Parameters of Semiconductor Optical Amplifier based on Wavelength Converters for all Optical Networks

... Optoelectronic, cross-gain modulation, and cross-phase modulation [3]. Wavelength converters are candidate technologies that offer excellent performance in WDM systems [1]. Among these different methods of ... See full document

5

Performance Analysis Of Semiconductor Optical Amplifier As Pre Amplifier In 16 Channel  Nrz Optical Transmission System.

Performance Analysis Of Semiconductor Optical Amplifier As Pre Amplifier In 16 Channel Nrz Optical Transmission System.

... The schematic of system setup is shown in fig. 1. The 16 channels WDM system has been operated at 10 Gb/s in the frequency range of 193.1-194.2 THz with 100 GHz channel spacing. WDM transmitter consists of pseudo ... See full document

6

Optical devices using an external cavity semiconductor laser

Optical devices using an external cavity semiconductor laser

... dual-mode optical device selectively operative in signal generation and amplification modes is disclosed ...of semiconductor material having opposed from and rear ...During operation in the ... See full document

14

Comparison between OQPSK and DPSK Bidirectional Radio over Fiber Transmission Systems

Comparison between OQPSK and DPSK Bidirectional Radio over Fiber Transmission Systems

... network based on reflective semiconductor optical amplifier (RSOA) utilizing a Differential Phase Shift keying modulation DPSK signal for down-link and Intensity Modulation (IM) for the ... See full document

5

Two photon absorption in semiconductor micro cavities

Two photon absorption in semiconductor micro cavities

... micro­ cavity by simply changing the incident angle of the light on the ...high-speed optical systems characterized by low peak power pulses ...The vertical nature of the cavity structure is ... See full document

168

Numerical Analysis of the Effect of Temperature and External Optical Feedback Variation on the Output Characteristics of External Cavity Semiconductor Laser Based Fiber Bragg Gratings

Numerical Analysis of the Effect of Temperature and External Optical Feedback Variation on the Output Characteristics of External Cavity Semiconductor Laser Based Fiber Bragg Gratings

... To date, many experimental and theoretical studies have been reported on the FGFP laser [1] [4] [21]. How- ever, in most of these studies, the temperature effect is not taken into account. In addition, they ... See full document

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