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[PDF] Top 20 Growth and characterisation of MnSb thin films and interfaces

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Growth and characterisation of MnSb thin films and interfaces

Growth and characterisation of MnSb thin films and interfaces

... layer growth under Sb (In) rich conditions, or exposure to the relevant elemental fluxes at 300 ◦ C, was used to provide the required surface reconstructions on ...In-rich growth is defined as where the ... See full document

213

Characterisation of half metallic thin films using polarised neutron reflectometry

Characterisation of half metallic thin films using polarised neutron reflectometry

... more growth defects causing pinning of magnetic ...at interfaces (including the surface), strains from epitaxial growth on the substrate, grain boundaries and crystal ... See full document

202

Linear and nonlinear optical characterisation of self assembled nanostructures

Linear and nonlinear optical characterisation of self assembled nanostructures

... the growth of aligned nanos- tructures by self–assembly or glancing angle deposition (GLAD) ...situ characterisation of the growth of aligned nanostructures on vicinal surfaces, and probing buried ... See full document

187

Magnetic and Electronic Phenomena in Oxide Interfaces, Thin Films and Heterostructures

Magnetic and Electronic Phenomena in Oxide Interfaces, Thin Films and Heterostructures

... crystallised films, such as those grown on MgO at high oxygen pressures are unclear, but one possibility is that there are antiphase boundaries within the structure which are created during deposition [8, 155, ... See full document

202

Growth and characterisation of n  and p type ZnTe thin films for applications in electronic devices

Growth and characterisation of n and p type ZnTe thin films for applications in electronic devices

... morphology, growth pattern and to also measure the grain sizes and surface roughness of ED- ZnTe ...the growth pattern; both figures show that the ZnTe layers have a columnar growth with varying ... See full document

38

Growth and structural characterisation of spintronic thin films deposited onto III V semiconductors

Growth and structural characterisation of spintronic thin films deposited onto III V semiconductors

... 5nm MnSb layers are relaxed in-plane, and therefore oset in the HK plane (gure ...on MnSb/GaAs thin lms, where lms were found to relax for thicknesses larger than 3 nm ...the MnSb CTR, and the ... See full document

232

Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

Heteroepitaxial growth of ferromagnetic MnSb(0001) films on Ge/Si(111) virtual substrates

... both thin (0001) fi lms 32 and bulk crystals 33 of ...for MnSb of between ...for MnSb(0001) fi lms grown on GaAs(111), where H C is normally in the range 20 − 200 Oe (easy) and 300 − 500 Oe (hard), ... See full document

8

Preparation and Characterisation of Nickel Doped Zinc Oxide Thin Films in comparison to ZnO Thin Films by Sol Gel Method

Preparation and Characterisation of Nickel Doped Zinc Oxide Thin Films in comparison to ZnO Thin Films by Sol Gel Method

... ZnO thin films grown at 600 o C is shown in ...showing growth of both crystallites of hexagonal wurtzite structure with higher degree of preference along the c-axis perpendicular to the ... See full document

9

Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi tile electrode plasma source

Characterisation of thin film silicon films deposited by plasma enhanced chemical vapour deposition at 162MHz, using a large area, scalable, multi tile electrode plasma source

... Multi-tile electrodes allow for the utilisation of higher RF frequencies in the production of amorphous and microcrystalline material for manufacture of solar panels and are scalable to large areas where wavelength ... See full document

11

Depth dependent magnetism in epitaxial MnSb thin films : effects of surface passivation and cleaning

Depth dependent magnetism in epitaxial MnSb thin films : effects of surface passivation and cleaning

... Here we report a study of MBE-grown MnSb(0001) surfaces with and without passivation or cleaning. We combine polarized neutron reflectivity (PNR), spin- polarized low energy electron microscopy (SPLEEM), X-ray ... See full document

16

Growth, characterisation and surface structures of MnSb and NiSb thin films

Growth, characterisation and surface structures of MnSb and NiSb thin films

... where P is the beam equivalent pressure as measured by a pressure gauge in the path of the beam (beam flux gauge, BFG), ∆H is the enthalpy of evaporation or sublimation, whichever is appropriate for the source material ... See full document

161

Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films

Growth and characterisation of MnSb (0001) / InGaAs (111) A epitaxial films

... MnSb films. At higher substrate temperatures and lower flux ratios, (In,Ga)Sb inclusions in the MnSb are formed, as well as MnAs inclusions within the substrate. The Sb and (In,Ga)Sb inclusions are ... See full document

25

Growth and characterisation of Cu(In,Ga)Se2 thin films for solar cell applications

Growth and characterisation of Cu(In,Ga)Se2 thin films for solar cell applications

... Figure 5.14: RBS spectraof CIGS thin films; the as-grown full line, annealedunder 9:1 mixture of N,: H2 dashedline and annealedunder selenium ambient dotted line at 300*C for two hours..[r] ... See full document

336

Characterisation of Spray Deposited MnO2 Thin Films

Characterisation of Spray Deposited MnO2 Thin Films

... A large number of metallic salt solutions when sprayed onto a hot substrate decompose to yield oxide films. It was used as early as 1910 to obtain transparent oxide films. In 1960s Chamberlin et ... See full document

7

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

Bonding constraint-induced defect formation at Si-dielectric interfaces and internal interfaces in dual-layer gate dielectrics

... tively similar results have been obtained for n-type metal– oxide–semiconductor 共 NMOS 兲 devices with nitride layer interfaces. 7 Figure 3 displays current density–voltage, J – V, plots for a capacitor fabricated ... See full document

7

Electrochemical Synthesis and Characterisation of ZrSe2 Thin Films

Electrochemical Synthesis and Characterisation of ZrSe2 Thin Films

... In last few years, there is considerable interest in the preparation and characterisation of chalcogenide thin films because of their potential applications in various fields of science and ... See full document

8

Structural and electrical behavior of tin doped ba0 6sr0 4tio3 thin films

Structural and electrical behavior of tin doped ba0 6sr0 4tio3 thin films

... The XRD pattern indicates that the films are polycrystalline suggesting a complete perovskite phase formation with the absence of secondary phase. The absence of the secondary phase (derivatives of tin oxide) ... See full document

8

Composition, structure and photoelectrochemical characterization of electrodeposited Cu4SnS4 thin films

Composition, structure and photoelectrochemical characterization of electrodeposited Cu4SnS4 thin films

... Princeton Applied Research potentiostat driven by a software model 270 Electrochemical Analysis System was used for the Cu 4 SnS 4 thin films electrodeposition in a three-electrode cell. The cell consisted ... See full document

6

Impact of annealing on structural and optical properties of CoPc thin films

Impact of annealing on structural and optical properties of CoPc thin films

... MPcs thin layers were intensively investigated since they are classified as small organic molecules and many factors such as the interaction with the substrate type, its surface, the deposition rate, and the ... See full document

7

The photochemical growth and characterisation of thin SiO2 layers

The photochemical growth and characterisation of thin SiO2 layers

... The growth procedure was modified slightly for this series of ...the growth chamber after chemical processing within 20 minutes; however, because the growth kit was not in a clean room environment, ... See full document

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