[PDF] Top 20 Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

... and improved carrier thermalization with increasing ...to thermal escape of carriers from the dots and transfer into deeper levels (larger dots) ...type modulation doping in the QDs, the ... See full document

... whereas annealing at 800 ° C caused an obvious reduction of ...low annealing temperatures. For the higher annealing temperature of 800 ° C, the detector detec- tivity was reduced; however, the ... See full document

... the annealing temperature, we are able to induce different diffusion lengths on the QD layers ...the InAs QD intermixing with the Ga atoms in its surrounding InGaAs QW and the second being the In-Ga ... See full document

... device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer ...formed InAs quantum dots grown on GaAs had been ... See full document

... finite GaAs barrier and thin wetting layer ...QD lasers, such as the low characteristic temperature at or above room temperature [7] and strong temperature- dependent maximum ...of quantum-dot ... See full document

... in InAs–GaAs pyramidal self-assembled quantum ...cm 1 at the pumping flux 8 = 10 24 cm 2 s 1 and a temperature of = 77 ...pumped lasers based on quantum wells, an ... See full document

... for GaAs, of the order of ...grown GaAs [9], until a (2 × 1) reconstruction of a bismuth- rich GaAs surface [10] is observed, the required condition for efficient incorporation of this element ... See full document

... Ga 1−x As can be grown on top of the Ge bottom junction to change the substrate lattice constant towards that of material with a more favorable bandgap ...a GaAs substrate, followed by a GaAs ... See full document

... the GaAs-based ones ...geometry-designed GaAs-based structures ...metamorphic InAs/InGaAs QD nano- structures in the lateral configuration can provide a fun- damental knowledge about the ... See full document

... Semiconductor lasers have found many applications, and among many types of them, Quantum dot lasers have found a special place in new life due to their interesting characteristics ... See full document

... region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μ m were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μ m, and the inner diameter d of ... See full document

... by thermal evaporation process; the CdS powers were evaporated at 850°C in a tube furnace with Au as the catalyst on the silicon ..., 1 × 10 16 , and 5 × 10 16 ions/cm 2 ... See full document

... In-flushed InAs quantum dots (QDs) grown on a GaAs substrate by molecular beam ...self-assembled InAs QDs, we have tuned the emission wavelength of InAs QDs to the ~1 μ m regime, ... See full document

... the InAs QD’s themselves also as the PC ...the GaAs absorption, distinct THz emis- sion peaks were observed as the pump wavelength approaches the excited and second-excited state peak PL wavelengths ... See full document

... conclusion, InAs quantum structures simultaneously grown on GaAs (100), GaAs (100) with a 2° misorientation angle towards [01-1], and GaAs (n11)B (n = 9, 7, 5) substrates have ... See full document

... in InAs/AlAs quantum dot superlattices grown on (001) and (311)B GaAs ...(311)B-oriented quantum dot superlattices measured in polarized scattering ...in quantum dots and ... See full document

... The agreement is poorer for the 80 Å height dot ~about 7%!. This difference may be explained in terms of the re- duced accuracy to which its energy eigenvalue is known. In fact, when, as this is the case, the ... See full document

... 1. Kovsh AR, Ledentsov NN, Mikhrin SS, Zhukov AE, Lishits DA, Maleev NA, Maximov MV, Ustinov VM, Gubenko AE, Gadjiev IM, Portnoi EL, Wang JS, Chi J, Ouyang D, Bimberg D, Lott JA: Long-wavelength (1.3 -1.5 micron) ... See full document

... the InAs QDs that provides strain relief for the dot/cap- ping layer lattice ...is improved with increasing Sb spray time to ...the InAs TO phonon signal as the main peak, and the LO signal ... See full document

... or 3-dimensional structures. Quantum dots show promise for use in diode lasers, amplifiers, and biological ...solid-state quantum computing. Indium arsenide quantum dots are ... See full document