[PDF] Top 20 MgO based magnetic tunnel junctions and their applications

... The tunnel current o f a m etal/insulator/m etal structure is not expected to show m uch tem perature ...Al/AlOx/Al junctions (with A1 in the norm al state) showed only a 5 -10 % change in resistance from ... See full document

... A second approach has been to construct all Heuslers giant magneto-resistance (GMR) stacks, where the spacer between the magnetic electrodes is a metal. The relevant literature is summarized in Table II. Although ... See full document

... bottom-pinned synthetic antiferromagnet magnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room temperature. Exchange bias fields as high as 150 ... See full document

... MTJ is one of the admirable spin-based device which overcomes the limitation of traditional memory devices such as SRAM, DRAM and Flash RAM. These devices have low density, speed and endurance. MRAM can provide ... See full document

... for magnetic sensing applications, for instance, speed, position, and angle detection in the automotive ...These applications require magnetic sensors with nanotesta or even lower field ... See full document

... atomic positions both within the GGA and the LSDA as shown in Fig. 6. It is clear from this figure that the transmis- sion coefficient remains almost unchanged at the vicinity of the Fermi level. The change in the TMR is ... See full document

... Fe|MgO|Fe tunnel junction has revolutionized the hard-disk industries, yet despite its success it remains the only commercially viable tunnel ...a tunnel junction could make the next ... See full document

... In conclusion, we have measured TMR and low frequency barrier noise in MTJs with sputtered MgO, chang- ing the growth pressure. A TMR of up to 330% and a barrier noise as low as 2.53.3 10 12 lm 2 have been ... See full document

... nm/s. MgO barrier was electron-beam evaporated from MgO sintered target in the same UHV ...into junctions with the dimension of 5 10 lm 2 using ultraviolet (UV) lithography and Ar ion beam milling, ... See full document

... Modern magnetic sensors, such as read heads for hard disk drives, are based on the tunnel magnetoresistance 共TMR兲 ...a magnetic tunnel junction 共MTJ兲 formed by two magnetic ... See full document

... (Received 17 January 2018; revised manuscript received 28 February 2018; published 20 March 2018) Shot noise reveals spin dependent transport properties in a magnetic tunnel junction. We report measurement ... See full document

... FIG. 2. Noise PSD in the P state for a MgO-based MTJ at di ff erent bias voltage values around the magnon peak at 3.6 K (a) and 0.6 K (c), the noise plateau is visible. The dashed lines in (a) and (c) are ... See full document

... and MgO were ...the magnetic properties of the CFHM in complex ...and MgO gives the best electrode properties but reduces the tunneling spin polarization due to its low spin diffusion ...effective ... See full document

... the MgO and CoFe layers, ...CFMS, MgO and CoFe layers by ...CFMS/MgO/CoFe junctions with these decelerated electron-beam voltages (V acc ... See full document

... digital memory applications, specifically focusing on device performance/optimization and system enablement. It explores material properties, basic device performance, process development for CMOS integration, and ... See full document

... building applications based on these ...Besides, applications of GMR are as diverse as automotive sensors, solid-state compasses and non- volatile magnetic ... See full document

... devices based on the manipulation of the flow of spin-polarized current through metallic hetero-structures composed of sandwiches of thin ferromagnetic electrodes separated by ultrathin metallic [typically copper] ... See full document

... the MgO barrier layer was deposited by RF sputtering from a target-facing-target (TFT) ...in-plane magnetic field of 5 mT during the metal deposition. Junctions with the size of 100 X 100 ì m 2 to 20 ... See full document

... two magnetic elec- trodes, spin accumulation effects, or magnon excitation at the metal/barrier ...two tunnel junctions connected in ...two junctions and the bias on each is ...Although ... See full document

... þ MgO/ CoFeB MTJ: (a) a bright field image suggests a fully crystalline MgO with (001) texture across the barrier, whilst (b) a HAADF image shows clear con- trast variations across the MgO barrier, a ... See full document