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[PDF] Top 20 Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells

... junction solar cells have achieved in excess of 43% ...of solar energy conversion ...utilize InAs quantum dot (QD) nanostructures embedded in a GaAs p-i-n solar ... See full document

162

Submonolayer InGaAs/GaAs quantum dot solar cells

Submonolayer InGaAs/GaAs quantum dot solar cells

... mixed quantum well-dot structure and the submonolayer deposition of InAs in GaAs matrix forms InAs rich two-dimensional islands in InGaAs wells ...the optical properties of the ... See full document

6

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

... semiconductor solar cells are the highest efficiency cells developed to date [1] due to the wide range of bandgaps that can be grown with high crystalline quality in this material ...junction ... See full document

5

Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells

Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells

... The quantum efficiency is used to evaluate the generated carrier efficiency of the solar cell, which is determined by the ratio of the number of generated carriers on the number of incoming ...photons. ... See full document

6

Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption

Recent Progress Towards Quantum Dot Solar Cells with Enhanced Optical Absorption

... quite different from the optimal values for the ideal IBSC, and high-efficiency QDSCs have not been realized yet, although a high theoretical efficiency of 52.8 % is still predicted [26]. Nonetheless, ... See full document

8

The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS)

The Effects of GaAs substrate miscut on InAs quantum dot optoelectronic properties: Examined by photoreflectance (PR) and deep level transient spectroscopy (DLTS)

... In QWs, electrons are confined to a two-dimensional layer between high bandgap semiconductor layers providing a space where electron energies and thresholds for excitation are customized by changing the well thickness. ... See full document

112

Growth parameters of InAs/GaAs quantum dots grown by MOVPE

Growth parameters of InAs/GaAs quantum dots grown by MOVPE

... term quantum dot (QD) refers to zero dimensional structures that possess superior transport and optical ...the quantum well, the superior attributes of the quantum dot has ... See full document

6

InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition

InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition

... the quantum dot and wetting ...the quantum dot and wetting layer states by electrons, which will result in a higher concentration of electrons in QDs region when the sample is under laser ... See full document

172

Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device

Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device

... of quantum confinement (barrier height), which is from electrons or holes energy levels with respect to the GaAs band ...champion cells in performance, which were published by Mackos et ...two ... See full document

113

Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells

Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells

... of InAs self-assembled quantum dots in the intrinsic region of a GaAs pin ...create quantum dot arrays that do not require strain ...the quantum dots at the nanometre ...the ... See full document

6

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

... of InAs self-assembled quantum dots in the intrinsic region of a GaAs pin ...create quantum dot arrays that do not require strain ...the quantum dots at the nanometre ...the ... See full document

7

Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

... Quantum dots (QDs) are promising for realizing fast and stable laser sources in fiber optic applications, due to their superior characteristics over conventional quan- tum well (QW) lasers, such as low threshold ... See full document

5

Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells

Nanotetrapods: quantum dot hybrid for bulk heterojunction solar cells

... longitudinal optical phonon mode of CdTe can be observed around 165 cm −1 (1LO1) and 330 cm −1 (2LO1) after the NT/ QD HBH film was treated with MPA (sample ... See full document

8

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates

... on GaAs(111)A surface along [ 21¯ 1] direction before In ...on GaAs (001) surface [3]. Unlike the case of GaAs(001), where surface is typically terminated with an excess of As, on GaAs(111)A ... See full document

7

Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

Ultrafast dynamics in InAs quantum dot and GaInNAs quantum well semiconductor heterostructures

... double mechanical chopper (MC) modulates one beam at f 1 and the other at f 2 , so the pump induced change in probe transmission (∆T ) for positive probe delays can be detected at the difference frequency f dif = ... See full document

167

Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots

Radiative Recombination Mechanisms of Large InAs/GaAs Quantum Dots

... The optical properties of large InAs/GaAs quantum dots were investigated by low-temperature photoluminescence as a function of the excitation-power ... See full document

6

Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers

Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers

... internal optical loss exhibit weak depen- dency on ...internal optical loss, the differential gain (dg/dn) and nonlinear gain compression factor (ε) are ... See full document

5

Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells

Quantum Dot Enhanced Epitaxial Lift-Off Solar Cells

... (ELO) GaAs devices for both single junction cells [23, 24] and multijunction systems that benefit from a cost savings due to successful substrate reuse [25, 26, 27, ...QD-enhanced solar cell to ... See full document

108

Nitrogen Doped Carbon Dots for “green” Quantum Dot Solar Cells

Nitrogen Doped Carbon Dots for “green” Quantum Dot Solar Cells

... MFP-3D-BIO). Fourier transform infrared (FT-IR) spectra are obtained on a Bruker VERTEX70 FT-IR spectrometer ranged from 4000 to 400 cm −1 . X-ray photoelectron spec- tra (XPS) are acquired with a Japan Kratos Axis Ultra ... See full document

6

InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application

InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application

... high quantum efficiency, broadband wavelength tuning range, and high-temperature stability over commercial quantum well-based devices ...in quantum dot laser structures has been dem- onstrated ... See full document

7

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