[PDF] Top 20 Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors
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Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors
... back-channel passivation material exhibited an excellent match between the simulation and ...back-channel passivation material resulted in an improvement in the device ... See full document
56
Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors
... back-channel passivation material exhibited an excellent match between the simulation and ...back-channel passivation material resulted in an improvement in the device ... See full document
56
Amorphous Indium Gallium Zinc Oxide Based Thin Film Transistors and Circuits.
... new thin film is deposited on the patterned photoresist coated samples, the whole sample is then submerged in a solvent (usually acetone) to remove the ...the film on top of the photoresist, leaving ... See full document
173
Fabrication of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors by Focused Ion Beam
... electrons accumulated at the interface, and extend the linear region of the output characteristics. Besides, the milling also introduces damages to the IGZO and reduces the mobility of the channel. To fabricate device ... See full document
187
Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors, Non-volatile Memory and Circuits for Transparent Electronics
... in amorphous oxide semiconductors, AOS based technology is still in the nascent ...develop indium gallium zinc oxide (IGZO) AOS thin films by the pulsed laser deposition ... See full document
163
Simulation of Digital Circuits based on Amorphous Indium Gallium Oxide Thin Film Transistors.
... The circuit design of D-Latch implemented using a-IGZO TFTs is given in Fig 5-2. The latching function is realized by pass transistors M 1 and M 2 as follows. When the positive CLK pulse arrives at the input, M 1 ... See full document
113
Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
... years, amorphous oxide semiconductors, particularly amorphous indium gallium zinc oxide (a-IGZO), have received great interest for thin-film transistor (TFT) ...to ... See full document
7
High Performance Gallium Tin Zinc Oxide Thin Film Transistors By Rf Magnetron Sputtering
... the amorphous oxide semiconductor (AOS) electronics. Oxide semiconductors, especially amorphous materials with zinc oxide (ZnO) based alloys, such as indium gallium ... See full document
91
Investigation of Europium Doped Wide Band Gap Oxides and an Annealing Study of the Amorphous Oxide Semiconductor - Indium Gallium Zinc Oxide
... 2.1.3.1 Amorphous thin films of InGaO 3 (ZnO) m InGaO 3 (ZnO) m [m = integer] (also abbreviated as IGZO) is a novel amorphous and transparent oxide semiconductor with a band gap between ... See full document
115
Investigation of Thermal Stress Degradation in Indium-Gallium-Zinc-Oxide TFTs
... Due to the wide band-gap, the IGZO material remains transparent in the visible range and is therefore a suitable candidate as a TFT active layer material. IGZO, like other AOS materials, is an inherently n-type ... See full document
64
Subtractive Plasma-Assisted-Etch Process for Developing High Performance Nanocrystalline Zinc-Oxide Thin-Film-Transistors
... of amorphous metal-oxide TFTs in digital logic ...Still, amorphous-oxide-semiconductors have limitations in current density and switching on/off ratios, and are therefore not sufficient for ... See full document
152
Study of thin film transistors (TFTs) based on In, Sn and Zn amorphous oxides alloys
... 2 Amorphous oxide semiconductors (AOS) have attracted considerable attention for various electronic device applications [1] such as solar cells, transparent electrodes, touch screen panels, optoelectronic ... See full document
168
Influence of Plasma Treatment to the Performance of Amorphous IGZO based Flexible Thin Film Transistors
... silicon oxide was deposited by PEDVD at 250 o C as etching stop ...silicon oxide was deposited as passivation ...ITO film was sputtered at room temperature and patterned, etched as pixel ... See full document
6
Indium Doping Concentration Effects in the Fabrication of Zinc-Oxide Thin-Film Transistors
... semiconducting thin films were fabricated using a sol-gel method under standard atmospheric conditions and acetates as ...of thin-film transistors (TFT) with a ZnO active channel layer and ... See full document
12
Compositional influence on the electrical performance of zinc indium tin oxide transparent thin-film transistors
... TCOs, indium tin oxide (ITO) is widely used because of its low resistivity (in the order of 10 -4 Ω·cm) and high transmittance (higher than 80 %) ...of indium. On the contrary, zinc ... See full document
12
Photoelectrocatalytic Sensor for Volatile Organic Compounds using Indium Gallium Zinc Oxide Thin Film Transistor.
... Conventional amorphous semiconductors such as a-Si:H exhibit much deteriorated carrier transport properties compared with the corresponding crystalline ...in amorphous structures form rather deep and ... See full document
129
Atomic Layer Deposition of Indium Oxide Nano films for Thin Film Transistors
... cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2 ) as ...deposited film increases gradually with deposition temperature, which is attributed to the enhanced crystallization of the film ... See full document
8
Effects of Doped Stannum in the Fabrication of Zinc-Oxide Thin-Film Transistors
... The amorphous nature of the approximately 4.5 nm-thick ZTO film was verified using TEM. Smooth and conformal interfaces were observed in the sample. The sol-gel method resulted in a smooth ZTO film. ... See full document
10
Plasma Treatment Method for Ohmic Contacts on Zinc Oxide Thin Film Transistors
... in thin film transistor devices, which were limited to low-performance applications as compared to single-crystal Si ...for thin-film transistors, especially for the flat panel display ... See full document
84
High-performance Zinc Oxide Thin-Film Transistors For Large Area Electronics
... transparent oxide semiconductors are two families of materials that are currently being investigated as potential alternatives to silicon (Si) technology for use in existing and new electronic device applications ... See full document
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