[PDF] Top 20 Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
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Stress distribution of GaN layer grown on micro-pillar patterned GaN templates
... on stress in the coalesced GaN over grown layer, we have performed electron channeling contrast imaging (ECCI) in a field emission scanning electron ...thick GaN layer ... See full document
5
Overgrowth and strain investigation of (11-20) non-polar GaN on patterned templates on sapphire
... non-polar GaN with high crystal quality which has been achieved by means of overgrowth on our regularly arrayed micro-rod ...non-polar GaN on a standard stripe-patterned template which is ... See full document
9
Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate
... have grown GaN films and fabricated InGaN/GaN LEDs by metal-organic chemical vapor deposition (MOCVD) on CPSS and the conventional sapphire substrate ...stripy distribution of the dislocations ... See full document
7
Enhancement of light output power of GaN based light emitting diodes with photonic quasi crystal patterned on p GaN surface and n side sidewall roughing
... of GaN-based nitride light-emitting diodes (LEDs) is dominated on both material techniques such as metal organic chemical vapor deposition (MOCVD) epitaxial growth and device fabrication ...of GaN-based ... See full document
6
Improving the emission efficiency of MBE grown GaN/AlN QDs by strain control
... the GaN QDs in sample A have the largest strain, while the QDs in sample D have the smallest ...of GaN QDs, it takes 18, 25, 30, and 35 s for samples A, B, C, and D, respectively, to complete the 2D-to-3D ... See full document
6
Validity of Vegard's rule for Al1-xInxN (0.08<x<0.28) thin films grown on GaN templates
... RBS spectra since the signals from Al and In are well sepa- rated. The horizontal lines and shaded areas in figures 7(b) and (d) correspond to this ratio and its uncertainty, respectively, while the coloured lines mark ... See full document
11
Impacts of Thermal Atomic Layer Deposited AlN Passivation Layer on GaN on Si High Electron Mobility Transistors
... atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are ...AlN layer barely enhanced the ... See full document
5
Efficiency improvement of GaN based ultraviolet light emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
... nucleation layer on PSS but not cause PSS surface ...nucleation layer on ...nucleation layer was kept at high temperature (600°C) that could lead to the pre- ferred orientation ...nucleation ... See full document
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Composition and luminescence of AlInGaN layers grown by plasma-assisted molecular beam epitaxy
... AlIn- GaN layers, since a balance is required between the high temperatures suited for Al- and Ga-containing layers and the low temperatures needed for efficient In ... See full document
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Fabrication of vertical GaN/InGaN heterostructure nanowires using Ni Au bi metal catalysts
... interfacial layer on which GaN nanowires grow ran- ...are grown by the VLS ...interfacial layer, the interfacial layer is grown prior to the nanowires, though the catalyst for ... See full document
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... The photoluminescence (PL) measurement of the LED structure on both SSP and PSS were carried out and their PL emission patterns are shown in Figure 2. The peak wavelengths of SSP and PSS epitaxial LED structures were ... See full document
5
Simulation and Growth Study of V/III Ratio Effects on HVPE Grown GaN
... that GaN samples with higher V/III ratio have better surface ...quality GaN films were achieved under a V/III ratio of ...of GaN film is improved with higher V/III ... See full document
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Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
... the GaN buffer layer, a field emission gun scanning electron microscope (FEI Sirion 200) was used to acquire room temperature CL hyperspectral images of the HVPE-GaN surface and the LED ...the ... See full document
7
Characterization of the Nucleation Layer in GaN/Sapphire Heterostructures
... of GaN, which can serve as substrates for homoepitaxial ...crystal GaN films have been grown heteroepitaxially on a number of substrates as listed in ...for GaN heteroepitaxy despite its poor ... See full document
111
Study of electronic transport parameters on the heterojunction of AlGaN/GaN, grown on Sapphire: two layer model
... interfacial layer, transport properties in the layer are highly affected by scattering due to the ...interfacial layer whereas various other types of scattering mechanisms are included for the ... See full document
8
Gallium hydride vapor phase epitaxy of GaN nanowires
... and GaN NW, carried out by Kuo et ...the GaN NW and forms a Au-Ga alloy but Ga also reacts with N at the top of the GaN NW outside and away from the Au NP as shown in Figure ...their GaN NWs ... See full document
6
Development of micro-electromechanical systems in GaN
... RI VWUDLQ WUDQVGXFHUV QDWLYH WR *D1 ZKLFK WDNH DGYDQWDJH RI LWV ODUJH SLH]RHOHFWULF FRQVWDQWV 8QOLNH LQ FRQYHQWLRQDO LQVXODWLQJ FU\VWDOV WKH SUHVHQFH RI IUHH FKDUJH FDUULHUV LQ WKH VHPLF[r] ... See full document
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Characterization of Homoepitaxially-Grown AlGaN/GaN Heterostructures
... magnesium-doped GaN layer in addition to a not-intentionally doped GaN layer, room temperature photoluminescence (PL) and cathodoluminescence (CL) were used to track the magnesium ... See full document
305
Patterned growth of InGaN/GaN quantum wells on freestanding GaN grating by molecular beam epitaxy
... freestanding GaN gratings are fab- ricated on a GaN-on-silicon substrate by a combination of EB lithography, FAB etching of GaN and DRIE of sili- ...The patterned growth of InGaN/GaN ... See full document
7
Analyses of 2 DEG characteristics in GaN HEMT with AlN/GaN super lattice as barrier layer grown by MOCVD
... hetero-structure resulted in poor transport properties [7]. In contrast, the growth of AlN barrier layer on GaN channel enhances the transport properties. Introducing nano-structures into the HEMT ... See full document
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