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[PDF] Top 20 Surface characterisation of semiconductor materials

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Surface characterisation of semiconductor materials

Surface characterisation of semiconductor materials

... The experiments were performed using the diffractometer and instrumentation described in Chapter 5. The 088 reflection was used with MoKoti radiation (0.71 A ), giving an asymmetric reflection at the sample, with a 2.6° ... See full document

193

Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems

... This article reviews the application of the microscopic model to a wide range of material systems used in VEC- SEL and other laser systems. After our theoretical ap- proach is briefly introduced (Section 2), we discuss ... See full document

20

Microstructure characterisation of drop tube processed SiGe semiconductor alloy

Microstructure characterisation of drop tube processed SiGe semiconductor alloy

... Due to their application in micro-electronics, semiconductors such as are the subject of great current interest. In particular, their tuneable band gap means that the alloy proves to be more flexible than current, pure ... See full document

7

Numerical characterisation of biomedical titanium surface texture using novel feature parameters

Numerical characterisation of biomedical titanium surface texture using novel feature parameters

... titanium materials with specific surface textures (for example, those produced using consecutive polishing, sandblasting and acid etching) are widely used to facilitate osseointegration of human/animal ... See full document

11

Polymer Composite Materials for Semiconductor Optoelectronics and Microelectronics

Polymer Composite Materials for Semiconductor Optoelectronics and Microelectronics

... Further to evaluate the continuity of the wirings in the CPC we have investigated the surface topology of the CPC (Fig. 3) by high resolution electron microscopy with secondary double-beam electron field emission ... See full document

7

Gas Sensing Properties of Nanosized Mg

Gas Sensing Properties of Nanosized Mg

... Semiconductor metal oxides (SMO) have received increasing attention due to their unique physical properties. Metal oxide materials have an excellent surface property so they are used for the ... See full document

5

Design and Characterisation of III-V Semiconductor Nanowire Lasers

Design and Characterisation of III-V Semiconductor Nanowire Lasers

... In this dissertation, we presented the design and demonstration of various III-V semicon- ductor nanowire lasers. In Chapter 3, we began by investigating the design of GaAs nanowire lasers – we identified the optimal ... See full document

200

XPS, AES AND LASER RAMAN SPECTROSCOPY: A FINGERPRINT FOR A MATERIALS SURFACE CHARACTERISATION

XPS, AES AND LASER RAMAN SPECTROSCOPY: A FINGERPRINT FOR A MATERIALS SURFACE CHARACTERISATION

... In AES, it is possible to detect 1% of a monolayer of almost any elemental species. One of the greatest strength of AES, however, particularly in comparison with XPS, is the fact that the stimulating beam is an electron ... See full document

20

Characterisation of High-Carbon Steel Surface Welded Layer

Characterisation of High-Carbon Steel Surface Welded Layer

... the surface welded joint is shown in ...filler materials, which shift transformation points to bainitic ...in surface welded layers and it provides improvement in mechanical properties and wear ... See full document

6

Applications of In-Situ Functionalization for Semiconductor Materials.

Applications of In-Situ Functionalization for Semiconductor Materials.

... as surface capping agents and it has been proposed that they can participate in monodentate, bidentate, or tridentate bonding to the ...detailed surface analysis we describe in this section is aimed at ... See full document

150

Characterisation of III V quaternary multilayer semiconductor device materials by x ray diffraction

Characterisation of III V quaternary multilayer semiconductor device materials by x ray diffraction

... thickness of the quaternary layers in comparison with the InP layer participating in the reflection will depend on the penetration depth of X-rays, discussed in Chapter 4. The ratio of the integrated intensity of the ... See full document

324

Fabrication and characterisation of 3C SiC on Si semiconductor devices

Fabrication and characterisation of 3C SiC on Si semiconductor devices

... diffusion coefficients of common dopants are negligible below 1800 ◦ C [59], which means thermal diffusion is not feasible thus leaving ion implantation the only option. Although a complex and expensive system, ion ... See full document

256

An investigation of novel and next generation semiconductor and piezoelectric materials using Raman spectroscopic characterisation

An investigation of novel and next generation semiconductor and piezoelectric materials using Raman spectroscopic characterisation

... All material supplied by Trinity College Library is protected by copyright (under the Copyright and Related Rights Act, 2000 as amended) and other relevant Intellectual Property Rights. By accessing and using a Digitised ... See full document

205

Surface characterisation of contact materials for thin film CdTe solar cells

Surface characterisation of contact materials for thin film CdTe solar cells

... a semiconductor as described earlier a Schottky barrier can form which prevents the ohmic behaviour of the back contact and hence limits the efficiency of the ...the surface of the CdTe prior to metal ... See full document

198

Intramolecular bonds resolved on a semiconductor surface

Intramolecular bonds resolved on a semiconductor surface

... 7 surface and support our findings with detailed density functional theory (DFT) ...on semiconductor surfaces, leading to a much broader applicability for submolecular imaging ... See full document

8

Assembly of organic layers onto carbon surfaces

Assembly of organic layers onto carbon surfaces

... carbon surface, the most commonly proposed mechanism has the reaction proceeding via an amine cation radical (Figure ...carbon surface with aromatic groups whereas the other routes permit both aliphatic and ... See full document

516

Optoelectrical properties of highly mismatched semiconductor materials

Optoelectrical properties of highly mismatched semiconductor materials

... such materials as a function of nitrogen incorporation, the band anti- crossing (BAC) model parameters of the constituent endpoint ternaries must be ...III–V materials by Vurgaftman and Meyer ... See full document

107

Use of construction and demolition recycled materials (C&Drm) in road pavements validated on experimental test sections

Use of construction and demolition recycled materials (C&Drm) in road pavements validated on experimental test sections

... studied materials was determined according to EN 933-1 [5], by the sieving method with washing aggregate for removing the clay particles and other aggregate smaller ... See full document

7

Investigation of electronic structure and optical properties of organic molecular semiconductor materials by X ray spectroscopies

Investigation of electronic structure and optical properties of organic molecular semiconductor materials by X ray spectroscopies

... All material supplied by Trinity College Library is protected by copyright (under the Copyright and Related Rights Act, 2000 as amended) and other relevant Intellectual Property Rights. By accessing and using a Digitised ... See full document

190

Recent Progress in Constructing Plasmonic Metal/Semiconductor Hetero-nanostructures for Improved Photocatalysis

Recent Progress in Constructing Plasmonic Metal/Semiconductor Hetero-nanostructures for Improved Photocatalysis

... performances can be better regulated through adjusting structure, ingredient, and components arrangement. Therefore, the reasonable design and synthesis of metal/semiconductor hetero-nanostructures is of vital ... See full document

23

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