[PDF] Top 20 Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers

... efficiency and internal optical loss exhibit weak depen- dency on temperature. With the values of internal quan- tum efficiency and internal optical loss, the differential gain (dg/dn) and nonlinear gain compression ... See full document

... QD lasers, it is important to delay the onset of ES ...rapid thermal annealing (RTA) might result in intermixing of the QDs with the sur- rounding matrix and tunable inter-level ...the effects of RTA ... See full document

... the small-signal intensity modulation of the annealed DUTs measured at 1,310 ...the small-signal intensity ...a small- signal modulation bandwidth of 2 GHz at a ... See full document

... usual quantum-well (QW) lasers, in many aspects including threshold current, thermal stability, modulation bandwidth, and spectral band-width, that is similar to an impulse function due to ... See full document

... the 1 μm regime, we have utilized the In-flush tech- nique [14, ...the InAs QD emission wavelength and en- ables the creation of a broadband light source by com- bining the ... See full document

... the growth of QDs. It is generally accepted that in epitaxial growth that a lower V/III ratio increases the adatom mobility [6]. Therefore, with the increase of the V/III ratio and the subsequent increase of the adatom ... See full document

... in InAs–GaAs pyramidal self-assembled quantum ...cm 1 at the pumping flux 8 = 10 24 cm 2 s 1 and a temperature of = 77 ...pumped lasers based on quantum ... See full document

... a small size is very desirable to increase an intermode spectral interval, reduce an active region volume, and achieve high density of components in an optical ...of small-sized (of the order of charge ... See full document

... ∼ 1 V, however, the inclusion of multiple layers of wider band gap semiconductors will significantly alter the energy band structure and the validity of comparisons with QD-IBSCs (or indeed GaAs control ... See full document

... the quantum engineered QD-IBSC of 35 ...a small e ff ect and the increase in V oc is mostly attributable to the nature of the quantum dot ...the quantum dots significantly affects the ... See full document

... For structure and contact designing as well as under- standing of the energy profile for both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- ... See full document

... Semiconductor lasers have found many applications, and among many types of them, Quantum dot lasers have found a special place in new life due to their interesting characteristics arising from ... See full document

... the InAs QD’s themselves also as the PC ...put signal as the structure is pumped up to around 880 nm, the upper limit of the GaAs absorption, distinct THz emis- sion peaks were observed as the pump ... See full document

... the GaAs-based ones ...geometry-designed GaAs-based structures ...metamorphic InAs/InGaAs QD nano- structures in the lateral configuration can provide a fun- damental knowledge about the ... See full document

... Chapter 3 where the photoluminescence from transitions between the few electron states to the many hole states produces many closely overlapping emission ... See full document

... the InAs QDs that provides strain relief for the dot/cap- ping layer lattice ...the InAs TO phonon signal as the main peak, and the LO signal giving a high-energy-side ...phonon ... See full document

... ABSTRACT: Quantum Dots(QD) are semiconductor nanocrystals with diameters in the range of 2-10 ...the quantum dots fall between those of bulk semiconductors and those of discrete molecules of comparable ... See full document

... Since the introduction of an important advancement of using a nanostructured dye-sensitized photo-active elec- trode in a solar cell by O'Regan and Grätzel in 1991 [1], the dye-sensitized solar cells (DSSCs) have ... See full document

... utilize InAs quantum dot (QD) nanostructures embedded in a GaAs p-i-n solar cell device to investigate the effects of these unique ...reduced InAs coverage value was found to ... See full document

... of 1 µm) the number of carriers created in the host matrix around the QD provides a steady occupation of the X level by one ...about 1 µm, an excitonic recombination lifetime of about 1 ns and ... See full document