CHAPTER 8 SUMMARY AND FUTURE WORKS 108
8.2 Future works 111
Future efforts on T2SLs should focus on identifying and reducing the mid-gap SRH recombination centers that is the major technological barrier in the applications of T2SL photodetectors. The point defect analysis methods demonstrated here based on Z-contrast imaging and strain mapping can be applied to the full-device structures of T2SLs. Combination of defect analysis with electrical characterization will be the first step to achieve the goal of identifying the mid-gap SRH recombination centers. To reduce the point defects, a comparative study between various T2SLs with systematic designs in growth parameters are required.
112
The growth of T2SLs using MOCVD is also an important research direction because it is the favorable growth method in manufacturing thanks to low cost and high yield production. A comprehensive structure and composition analysis applied the MOCVD-grown samples can lead to significant gains in understanding the evolution of thin film growth in MOCVD compared to the MBE-grown T2SLs (with same design).
We have learned that the interface engineering using forced thin InSb layer played a vital role in improving and controlling the device performance of the InAs/GaSb T2SLs. This promising approach needs to be further investigated, especially whether such treatment can be also utilized for the Ga-free T2SLs to further enhance the minority carrier lifetime and the subsequent investigation of structures with the methods in this thesis can be followed.
For the future microscopy works, further improvement of measurement precision on strain is possible with the help of the post-data processing techniques such as averaging a series of images [141, 142] and refinement of atomic positions using a statistical method [143]. This will provide improved sensitivity on detecting atomic displacements and help to sort out the origins of specific arrangement of atomic structure. Lastly, thanks to an aberration corrected STEM, the depth-of-focus is reduced significantly, thereby increasing the vertical resolution limit along the sample thickness direction to nanometer scale. Hence, the through-focal series imaging allows for the detection of atomic column displacements in three dimensions (3D), which enables the 3D information of strain distribution.
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