CHAPTER 6: CONCLUSION AND FUTURE WORK
6.4 IMPLICATIONS FOR FUTURE WORK
The following suggestions are given for future research work in the area:
The simulation results of BiCMOS mm-wave active BPFs were presented in this research. The fabrication, measurement and comparison of measurement results with simulation results are suggested for future work.
This research proposed the integration of an RF MEMS switch and mm-wave active BPF for the implementation of a tunable mm-wave active BPF. The actual integration with minimised losses can be treated as a future work.
In this research, a complementary cross-coupled pair-based negative resistance technique was applied to implement mm-wave active BPFs. Both N- and P-type active devices were used in this loss compensation topology. The SiGe BiCMOS 60 GHz active BPFs can also be implemented and simulated by selecting a differential NMOS cross-coupled pair-based [28] negative resistance technique. The design procedure may further be extended by using NPN bipolar transistors instead of NMOS transistors to
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compare the filter performance. The differential NMOS (or NPN) cross-coupled pair-based active BPF requires a biasing circuit.
As discussed in Chapter 2, a CCS TL can provide more parameters for the guiding characteristics synthesis without any change in the process and material constants. An efficiently meandered CCS TL facilitates a compact layout, size miniaturisation, Q-factor improvement and a high degree of integration [35]. The modelling and realisation of a CCS TL in the SiGe BiCMOS process technology may be a research area. A CCS TL-based resonator can be applied in the development of a compact SiGe BiCMOS mm-wave active BPF.
The selectivity of second-order active BPFs can be improved by using the concept of transmission zeros. These transmission zeros are placed on both sides of the filter passband. A shunt-feedback inductor-based selectivity improvement technique is most appropriate. In this technique, a shunt-feedback inductor is connected between the input and output terminals to obtain three transmission zeros [35], [36]. This topology improves the rejection levels and maintains the desired passband characteristics. The GF BiCMOS8HP PDK model, rfline, offers a high-frequency TL structure that can be used as an inductive element with low inductance and high Q-factor. The rfline PDK component may be suitable to realise the shunt-feedback inductor in the highly selective second-order SiGe BiCMOS mm-wave active BPFs.
The process corner and temperature analysis of active BPFs is suggested for future work. In modern technologies, it becomes difficult to control the performance of a device over corners, which leads to low yield. The corner analysis will be useful for observing the variations in filter parameters at different corners.
The analysis of stability and effects of various factors (temperature, power supply voltage etc.) on the stability of the proposed mm-wave active BPFs and filter-switch system may be considered for future work.
Most on-chip BPFs have been implemented using single-mode resonators. The size and loss of a filter can be reduced by modifying the conventional resonator to generate
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additional modes for the realisation of multimode operation [55]. A dual-mode SiGe BiCMOS mm-wave active BPF may be another direction for future work.
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