Structural Properties

Chapters 7 and 8 are primarily concerned with the structural properties of NSs. Chapter 7 is an in depth analysis of the structural properties of ion implanted Si QDs. In this chapter, the role of interface states, stress, and defects states on the optical properties are examined. Using information provided from x-ray photoemission spectroscopy, PL measurements, and Raman analysis as input parameters for theoretical modelling, a more accurate model is provided. This analysis is not done in isolation. A detailed comparison with existing experiments is also provided.

In Ch. 8, the effect of crystallinity on the optical properties is analysed. This work is an in depth review of experimental work done over many types of preparation methods for QWs, Q-Wires, and QDs where an attempt to isolate crystallinity as the only parameter is made. A simple model of strong and medium QC is used to study the change in the EG as a function of size for a wide range of samples. In the spirit of this thesis, this work found that crystalline materials show weaker confinement effects than their amorphous counterpart. At the same time, the exact source of this difference is still quite controversial and can be argued to depend on the preparation method.

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Chapter 2

Quantum Dot Characterization and

Fabrication

2.1

Introduction

In this chapter, quantum dot (QD) fabrication and characterization is reviewed. In Sec. 2.2 an overview of the characterization methods used in this and other works is highlighted. A general overview of fabrication via co-sputtering is given in Sec. 2.3.1, and plasma enhanced chemical vapour deposition (PECVD) is discussed in Sec. 2.3.2. For each method, an overview of the fabrication process is accounted for with references given for more detail. The effect of confinement of carrier particles for each method is reviewed. The focus of this thesis is on fabrication via ion-implantation accounted for in Sec. 2.4.