Substrate Type

The Si substrate used for the fabrication, presently, is single crystal Si wafer without any doping concentration. It is suggested that p-type and n-type doped Si wafers may also be used for sensor fabrication. The interdigital electrodes should be deposited on silicon dioxide insulation layer. The partially conductive substrate will provide a conductive path to the electric field though the substrate material on the rear side of the sensor. The will help reduce noise in the EIS measurements. Presently a back Au plane at ground potential serves the purpose.

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