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inorganic papers

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Gutzmannet al. CsVP2S7 doi:10.1107/S1600536804031150 Acta Cryst.(2005). E61, i6±i8

Acta Crystallographica Section E

Structure Reports

Online ISSN 1600-5368

CsVP

2

S

7

Andreas Gutzmann, Christian NaÈther and Wolfgang Bensch*

Institut fuÈr Anorganische Chemie, Christian-Albrechts-UniversitaÈt Kiel, Olshausenstraûe 40, D-24089 Kiel, Germany

Correspondence e-mail: [email protected]

Key indicators Single-crystal X-ray study

T= 293 K

Mean(S±P) = 0.004 AÊ

Rfactor = 0.046

wRfactor = 0.100

Data-to-parameter ratio = 23.2

For details of how these key indicators were automatically derived from the article, see http://journals.iucr.org/e.

#2005 International Union of Crystallography Printed in Great Britain ± all rights reserved

The quaternary vanadium thiophosphate CsVP2S7 (caesium

vanadium diphosphorus heptasul®de) was synthesized by reacting a mixture of Cs2S3, V, P4S3and S. The crystal structure

is composed of VS6 octahedra, which are linked by

bitetrahedral [P2S7] groups to form two-dimensional anionic

[VP2S7]ÿlayers. The layers are stacked perpendicular to the

crystallographiccaxis and are separated by the Cs+ions. The

VS6octahedra, the [P2S7] groups and the Cs+ions are located

in special positions. CsVP2S7 is isostructural to KVP2S7and

RbVP2S7.

Comment

In the past few years, new quaternary thiophosphates have been synthesized applying alkali metal halides or the low-melting alkali metal thiophosphate ¯uxes. In general,Ax[PySz]

(A= alkali metal) ¯uxes are formed byin situfusion ofA2Sx,

P2S5and S. In our investigations of quaternary group IVand V

thiophosphates, we have tried to develop alternative routes for the preparation of new compounds by a systematic variation of the reaction parameters, e.g. the use of binary transition metal sul®des or phosphides or P4S3instead of P2S5as educts.

Applying this technique, several new quaternary thio-phosphates with interesting structural features, such as

A3M2P5S18(A= Rb and Cs, andM= Zr and Hf; Gutzmannet

al., 2004a,b), K4VP2S9(Gutzmannet al., 2004c), Rb2Nb2P2S11

(Gutzmann & Bensch, 2002), Rb4Ta4P4S24 (Gutzmann &

Bensch, 2003), K0.38TaPS6and Rb0.46TaPS6(Gutzmannet al.,

2004d), have been obtained, demonstrating the high synthetic potential of the chemistry in alkali metal polythiophosphate ¯uxes. Analyzing the structures of the known ternary and

quaternary vanadium thiophosphates, 1D-PV2S10 (Brec,

Ouvrard, Evain et al., 1983), 2D-P0.2VS2 (Brec, Ouvrard,

Freour et al., 1983), 2D-V0.78PS3(Ouvrard et al., 1985),

2D-V2P4S13 (Evain et al., 1985), 0D-K4VP2S9 (Gutzmann et al.,

2004a), 1D-K2VP2S7 (Tremel et al., 1995), 1D-NaV0.84P2S6

(Costeet al., 2003) and 2D-AVP2S7(A= K and Rb; Kopninet

al., 2000; Durandet al., 1993), most of the compounds contain VS6octahedra as the general structural motif. Exceptions are

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PV2S10and K4VP2S9for which VS8and VS5polyhedra were

observed. Applying the very successful method presented for quaternary alkali metal thiophosphates, we synthesized CsVP2S7, which is isostructural toAVP2S7(A= K and Rb). We

report here on the synthesis and structural characterization of this compound.

The crystal structure of CsVP2S7 is built up of [VP2S7]ÿ

layers and Cs+ ions (Fig. 1). The [VP

2S7]ÿ anionic layers

extending in the (010) plane are separated by about 4 AÊ and are stacked perpendicular to [001] (Fig. 2). The charge

compensating Cs+ ions are situated between the layers. The

electronic situation of the title compound may be represented as [Cs+][V3+][P

2S74ÿ]. The main feature of this structure type is

the presence of VS6 octahedra, which are joined by [P2S7]

groups to form the layered [VP2S7]ÿ anion. The VÐS

distances of the strongly distorted octahedra range between 2.439 (3) and 2.457 (2) AÊ and are in good agreement with the data observed forAVP2S7(A= K and Rb; Kopninet al., 2000;

Durand et al., 1993). Each VS6octahedron is surrounded by

three symmetry-related pyrothiophosphate ligands sharing common edges with two [P2S7] units and sharing two common

corners with the two [PS4] tetrahedra of another bitetrahedral

[P2S7]4ÿ anion (Fig. 3). The PÐS bond lengths range from

2.008 (4) to 2.138 (4) AÊ. The longest PÐS bond is observed for the bridging S atom having bonds to two P atoms. The [PS4]

tetrahedra of the pyrothiophosphate ligands are strongly distorted, as is evidenced by the SÐPÐS angles. The connection scheme leads to the formation of cavities within the layers running along [001]. The Cs+cation is in a 12-fold

coordination of each six S atoms from two adjacent [VP2S7]ÿ

layers. The mean CsÐS distance is 3.768 AÊ and is in good agreement with the sum of the ionic radii [1.84 AÊ for S2ÿand

1.88 AÊ for Cs+ (CN12); Shannon, 1976]. Interestingly, the

anharmonic behavior of the alkali metal cation, as in the isostructural compoundsAMP2S7(A= K and Rb, andM= Cr,

V and In; Kopnin et al., 2000; Durand et al., 1993), is not observed. In the electron density map of the title compound a regular distribution around the Cs+position is observed. In the

isostructural K and Rb compounds, the alkali cations are

coordinated by eight S atoms, whereas the Cs+ions in the title

compound are surrounded by 12 S atoms. It is likely that this larger coordination number stabilizes the Cs+cation, leading

to the harmonic behavior.

Experimental

CsVP2S7 was obtained by the reaction of Cs2S3 (0.24 mmol), V (0.72 mmol), P4S3(0.24 mmol) and S (2.4 mmol). Cs2S3was prepared from a stoichiometric ratio of the elements in liquid ammonia under an argon atmosphere. In an N2-®lled glove-box, the starting materials were thoroughly mixed and loaded into a glass ampoule. After evacuation (10ÿ3 mbar) the ampoule was ¯ame-sealed and placed in a computer-controlled furnace. The sample was heated to 823 K within 24 h. After four days the sample was cooled to room temperature at a rate of 3 K hÿ1. To remove the excess Cs

xPySz¯ux, the resultant melt was washed with dryN,N-dimethylformamide and diethyl ether. The product was driedin vacuoand consisted of dark green needles which are stable in air and water. The yield based on vanadium was about 90%. The MIR spectra of CsVP2S7 displays strong absorptions at 598, 579, 526, 459 and 407 cmÿ1. These absorptions are in good agreement with the vibrational frequencies reported for Na2FeP2S7(Menzelet al., 1990) and may be assigned to PÐS stretching modes.

Crystal data CsVP2S7 Mr= 470.21

Monoclinic,C2 a= 8.6010 (17) AÊ b= 9.5176 (19) AÊ c= 6.7287 (13) AÊ

= 98.17 (3)

V= 545.23 (19) AÊ3 Z= 2

Dx= 2.864 Mg mÿ3

MoKradiation

Cell parameters from 68 re¯ections

= 10±15

= 5.77 mmÿ1 T= 293 (2) K Needle, green 0.150.050.05 mm

Data collection Philips PW1100 four-circle

diffractometer

!/scans

Absorption correction: numerical (X-SHAPEandX-RED; Stoe & Cie, 1998) Tmin= 0.701,Tmax= 0.738 1280 measured re¯ections 1205 independent re¯ections

979 re¯ections withI> 2(I) Rint= 0.044

max= 27.0 h= 0!10 k=ÿ12!12 l=ÿ8!8 3 standard re¯ections every 120 min intensity decay: none

inorganic papers

Acta Cryst.(2005). E61, i6±i8 Gutzmannet al. CsVP2S7

i7

Figure 1

Crystal structure of CsVP2S7, viewed in the direction of the

crystal-lographicbaxis.

Figure 2

Crystal structure of CsVP2S7, viewed in the direction of the

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Refinement Re®nement onF2 R[F2> 2(F2)] = 0.046 wR(F2) = 0.100 S= 1.01 1205 re¯ections 52 parameters

w= 1/[2(Fo2) + (0.0566P)2P] whereP= (Fo2+ 2Fc2)/3

(/)max< 0.001 max= 1.49 e AÊÿ3 min=ÿ0.63 e AÊÿ3 Extinction correction: none Absolute structure: Flack (1983),

567 Friedel pairs Flack parameter:ÿ0.03 (4)

Table 1

Selected geometric parameters (AÊ,).

P1ÐS3 2.008 (4)

P1ÐS1 2.013 (3)

P1ÐS2 2.027 (4)

P1ÐS4 2.138 (3)

V1ÐS2ii 2.439 (3)

V1ÐS3iii 2.453 (3)

V1ÐS3v 2.453 (3)

V1ÐS1ii 2.457 (2)

Cs1ÐS4vi 3.5277 (13)

Cs1ÐS3vii 3.548 (3) Cs1ÐS3viii 3.548 (3) Cs1ÐS1ix 3.705 (2)

Cs1ÐS2x 3.711 (3)

Cs1ÐS2v 3.711 (3)

Cs1ÐS1vii 4.004 (3) Cs1ÐS1viii 4.004 (3)

Cs1ÐS2x 4.108 (3)

Cs1ÐS2vi 4.108 (3)

S3ÐP1ÐS1 110.13 (15)

S3ÐP1ÐS2 120.02 (16)

S1ÐP1ÐS2 105.32 (14)

S3ÐP1ÐS4 109.79 (15)

S1ÐP1ÐS4 102.84 (15)

S2ÐP1ÐS4 107.33 (14)

S2ÐV1ÐS2ii 99.35 (16) S2ÐV1ÐS3iii 163.10 (9) S2iiÐV1ÐS3iii 87.99 (9) S2ÐV1ÐS3v 87.99 (9) S2iiÐV1ÐS3v 163.10 (9)

S3iiiÐV1ÐS3v 89.17 (14)

S2ÐV1ÐS1 82.00 (9)

S2iiÐV1ÐS1 90.23 (9) S3iiiÐV1ÐS1 82.78 (9) S3vÐV1ÐS1 105.93 (10) S2ÐV1ÐS1ii 90.23 (9) S2iiÐV1ÐS1ii 82.00 (9) S3iiiÐV1ÐS1ii 105.93 (10) S3vÐV1ÐS1ii 82.78 (9) S1ÐV1ÐS1ii 168.01 (17)

Symmetry codes: (i) ÿx‡1;y;ÿz‡1; (ii) ÿx;y;ÿz‡1; (iii) xÿ1

2;yÿ12;z; (v) ÿx‡1

2;yÿ12;ÿz‡1; (vi)x;y;zÿ1; (vii)ÿx‡21;yÿ12;ÿz; (viii)x‡12;yÿ12;z; (ix) ÿx‡1;y;ÿz; (x)x‡1

2;yÿ12;zÿ1.

The absolute structure was determined and is, according to the Flack (1983) x test, in agreement with the selected setting. The highest peak in the difference electron density map is located 0.97 AÊ from Cs1, and the deepest hole 1.27 AÊ from S4.

Data collection:DIF4 (Stoe & Cie, 1992); cell re®nement:DIF4; data reduction:REDU4 (Stoe & Cie, 1992); program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to re®ne structure: SHELXL97 (Sheldrick, 1997); molecular graphics: DIAMOND(Brandenburg, 1999); software used to prepare material for publication:XCIFinSHELXTL(Bruker, 1998).

Financial support by the state of Schleswig-Holstein and the Deutsche Forschungsgemeinschaft (DFG) is gratefully acknowledged.

References

Brandenburg, K. (1999). DIAMOND. Version 2.1c. Crystal Impact GbR, Bonn, Germany.

Brec, R., Ouvrard, G., Evain, M., Grenouilleau, P. & Rouxel, J. (1983).J. Solid State Chem.47, 174±184.

Brec, R., Ouvrard, G., Freour, R., Rouxel, J. & Soubeyroux, J. L. (1983).Mater. Res. Bull.18, 689±696.

Bruker (1998). SHELXTL. Version 5.1. Bruker AXS Inc., Madison, Wisconsin, USA.

Coste, S., Gautier, E., Evain, M., Bujoli-Doeuff, M., Brec, R., Jobic, S. & Kanatzidis, M. G. (2003).Chem. Mater.15, 2323±2327.

Durand, E., Evain, M. & Brec, R. (1993).J. Solid State Chem.102, 146±155. Evain, M., Brec, R., Ouvrard, G. & Rouxel, J. (1985).J. Solid State Chem.56,

12±20.

Flack, H. D. (1983).Acta Cryst.A39, 876±881.

Gutzmann, A. & Bensch, W. (2002).Solid State Sci.4, 835±840. Gutzmann, A. & Bensch, W. (2003).Solid State Sci.5, 1271±1276.

Gutzmann, A., NaÈther, C. & Bensch, W. (2004a).Solid State Sci.6, 205±211. Gutzmann, A., NaÈther, C. & Bensch, W. (2004b).Acta Cryst.E60, i42±i44. Gutzmann, A., NaÈther, C. & Bensch, W. (2004c).Acta Cryst.C60, i11±i13. Gutzmann, A., NaÈther, C. & Bensch, W. (2004d).Solid State Sci.6, 1155±1162. Kopnin, E., Coste, S., Jobic, S., Evain, M. & Brec, R. (2000).Mater. Res. Bull.

35, 1401±1410.

Menzel, F., Ohse, L. & Brockner, W. (1990).Heteroat. Chem.1, 357±362. Ouvrard, G., Freour, R., Brec, R. & Rouxel, J. (1985).Mater. Res. Bull.20,

1053±1062.

Shannon, R. D. (1976).Acta Cryst.A32, 751±767.

Sheldrick, G. M. (1997). SHELXS97 and SHELXL97. University of GoÈttingen, Germany.

Stoe & Cie (1992).DIF4 (Version 7.09X/DOS) andREDU4 (Version 7.03). Stoe & Cie GmbH, Darmstadt, Germany.

Stoe & Cie (1998).X-SHAPEandX-RED. Version 1.03. Stoe & Cie GmbH, Darmstadt, Germany.

Tremel, W., Kleinke, H., Derstroff, V. & Reisner, C. (1995).J. Alloys Compd.

219, 73±82.

inorganic papers

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Gutzmannet al. CsVP2S7 Acta Cryst.(2005). E61, i6±i8

Figure 3

Crystal structure of CsVP2S7, with labeling and displacement parameters

drawn at the 50% probability level, showing the interconnection of the VS6octahedra through [P2S7] groups sharing common edges and corners.

[Symmetry codes: (i) 1ÿx,y, 1ÿz; (ii)ÿx,y,ÿz + 1; (iii)ÿ1 2+x, ÿ1

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supporting information

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Acta Cryst. (2005). E61, i6–i8

supporting information

Acta Cryst. (2005). E61, i6–i8 [https://doi.org/10.1107/S1600536804031150]

CsVP

2

S

7

Andreas Gutzmann, Christian N

ä

ther and Wolfgang Bensch

Caesium vanadium diphosphorus heptasulfide

Crystal data CsVP2S7 Mr = 470.21 Monoclinic, C2 Hall symbol: C 2y a = 8.6010 (17) Å b = 9.5176 (19) Å c = 6.7287 (13) Å β = 98.17 (3)° V = 545.23 (19) Å3 Z = 2

F(000) = 440 Dx = 2.864 Mg m−3

Mo radiation, λ = 0.71073 Å Cell parameters from 68 reflections θ = 10–15°

µ = 5.77 mm−1 T = 293 K Plate, green

0.15 × 0.05 × 0.05 mm

Data collection

Philips PW1100 4-circle-diffractometer

Radiation source: fine-focus sealed tube Graphite monochromator

ω/θ scans

Absorption correction: numerical

X-SHAPE and X-RED (Stoe & Cie, 1998) Tmin = 0.701, Tmax = 0.738

1280 measured reflections

1205 independent reflections 979 reflections with I > 2σ(I) Rint = 0.044

θmax = 27.0°, θmin = 3.1° h = 0→10

k = −12→12 l = −8→8

3 standard reflections every 120 min intensity decay: none

Refinement Refinement on F2 Least-squares matrix: full R[F2 > 2σ(F2)] = 0.046 wR(F2) = 0.100 S = 1.01 1205 reflections 52 parameters 1 restraint

Primary atom site location: structure-invariant direct methods

Secondary atom site location: difference Fourier map

w = 1/[σ2(F

o2) + (0.0566P)2P] where P = (Fo2 + 2Fc2)/3 (Δ/σ)max < 0.001

Δρmax = 1.49 e Å−3 Δρmin = −0.63 e Å−3

Absolute structure: Flack (1983) Absolute structure parameter: −0.03 (4)

Special details

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Acta Cryst. (2005). E61, i6–i8

Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.

Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)

x y z Uiso*/Ueq

P1 0.3030 (3) 0.6425 (3) 0.4194 (4) 0.0169 (5)

S1 0.1582 (2) 0.5244 (3) 0.2257 (3) 0.0214 (6)

S2 0.1928 (3) 0.6633 (3) 0.6648 (4) 0.0235 (6)

S3 0.3703 (3) 0.8139 (3) 0.2801 (4) 0.0252 (6)

S4 0.5000 0.5068 (4) 0.5000 0.0175 (7)

V1 0.0000 0.4975 (2) 0.5000 0.0167 (5)

Cs1 0.5000 0.39532 (12) 0.0000 0.0370 (4)

Atomic displacement parameters (Å2)

U11 U22 U33 U12 U13 U23

P1 0.0134 (11) 0.0173 (14) 0.0202 (11) −0.0010 (9) 0.0027 (9) 0.0009 (10)

S1 0.0153 (11) 0.0275 (15) 0.0214 (12) −0.0070 (11) 0.0023 (9) −0.0025 (11)

S2 0.0214 (12) 0.0228 (15) 0.0284 (12) −0.0062 (10) 0.0109 (10) −0.0090 (11)

S3 0.0254 (13) 0.0223 (14) 0.0255 (13) −0.0077 (11) −0.0044 (10) 0.0067 (11)

S4 0.0171 (15) 0.0133 (18) 0.0219 (16) 0.000 0.0015 (11) 0.000

V1 0.0134 (10) 0.0162 (13) 0.0211 (11) 0.000 0.0048 (8) 0.000

Cs1 0.0264 (5) 0.0629 (8) 0.0216 (5) 0.000 0.0029 (4) 0.000

Geometric parameters (Å, º)

P1—S3 2.008 (4) S4—Cs1iii 3.5277 (13)

P1—S1 2.013 (3) V1—S2vi 2.439 (3)

P1—S2 2.027 (4) V1—S3vii 2.453 (3)

P1—S4 2.138 (3) V1—S3viii 2.453 (3)

P1—Cs1 4.211 (3) V1—S1vi 2.457 (2)

S1—V1 2.457 (2) Cs1—S4ix 3.5277 (13)

S1—Cs1 3.705 (2) Cs1—S3x 3.548 (3)

S1—Cs1i 4.004 (3) Cs1—S3xi 3.548 (3)

S2—V1 2.439 (3) Cs1—S1xii 3.705 (2)

S2—Cs1ii 3.711 (3) Cs1—S2xiii 3.711 (3)

S2—Cs1iii 4.108 (3) Cs1—S2viii 3.711 (3)

S3—V1iv 2.453 (3) Cs1—S1x 4.004 (3)

S3—Cs1i 3.548 (3) Cs1—S1xi 4.004 (3)

S4—P1v 2.138 (3) Cs1—S2v 4.108 (3)

S4—Cs1 3.5277 (13) Cs1—S2ix 4.108 (3)

S3—P1—S1 110.13 (15) S4—Cs1—S1 53.26 (4)

S3—P1—S2 120.02 (16) S4ix—Cs1—S1 113.50 (5)

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Acta Cryst. (2005). E61, i6–i8

S3—P1—S4 109.79 (15) S3xi—Cs1—S1 124.00 (6)

S1—P1—S4 102.84 (15) S1xii—Cs1—S1 141.26 (9)

S2—P1—S4 107.33 (14) S4—Cs1—S2xiii 144.98 (6)

S3—P1—Cs1 88.33 (12) S4ix—Cs1—S2xiii 62.54 (6)

S1—P1—Cs1 61.64 (9) S3x—Cs1—S2xiii 89.55 (6)

S2—P1—Cs1 151.62 (12) S3xi—Cs1—S2xiii 75.41 (6)

S4—P1—Cs1 56.81 (6) S1xii—Cs1—S2xiii 59.95 (6)

P1—S1—V1 85.96 (11) S1—Cs1—S2xiii 153.56 (6)

P1—S1—Cs1 89.81 (10) S4—Cs1—S2viii 62.54 (6)

V1—S1—Cs1 146.05 (10) S4ix—Cs1—S2viii 144.98 (6)

P1—S1—Cs1i 84.21 (11) S3x—Cs1—S2viii 75.41 (6)

V1—S1—Cs1i 100.51 (9) S3xi—Cs1—S2viii 89.55 (6)

Cs1—S1—Cs1i 112.55 (6) S1xii—Cs1—S2viii 153.56 (6)

P1—S2—V1 86.14 (12) S1—Cs1—S2viii 59.95 (6)

P1—S2—Cs1ii 148.66 (13) S2xiii—Cs1—S2viii 106.97 (9)

V1—S2—Cs1ii 109.13 (8) S4—Cs1—S1x 125.51 (7)

P1—S2—Cs1iii 92.75 (11) S4ix—Cs1—S1x 87.10 (6)

V1—S2—Cs1iii 100.99 (9) S3x—Cs1—S1x 51.32 (5)

Cs1ii—S2—Cs1iii 110.11 (7) S3xi—Cs1—S1x 103.88 (6)

P1—S3—V1iv 115.70 (13) S1xii—Cs1—S1x 112.55 (6)

P1—S3—Cs1i 97.41 (11) S1—Cs1—S1x 101.61 (4)

V1iv—S3—Cs1i 117.51 (10) S2xiii—Cs1—S1x 53.27 (5)

P1v—S4—P1 105.7 (2) S2viii—Cs1—S1x 63.18 (6)

P1v—S4—Cs1 108.42 (7) S4—Cs1—S1xi 87.10 (6)

P1—S4—Cs1 92.71 (7) S4ix—Cs1—S1xi 125.51 (7)

P1v—S4—Cs1iii 92.71 (7) S3x—Cs1—S1xi 103.88 (6)

P1—S4—Cs1iii 108.42 (7) S3xi—Cs1—S1xi 51.32 (5)

Cs1—S4—Cs1iii 144.99 (12) S1xii—Cs1—S1xi 101.61 (4)

S2—V1—S2vi 99.35 (16) S1—Cs1—S1xi 112.55 (6)

S2—V1—S3vii 163.10 (9) S2xiii—Cs1—S1xi 63.18 (6)

S2vi—V1—S3vii 87.99 (9) S2viii—Cs1—S1xi 53.27 (5)

S2—V1—S3viii 87.99 (9) S1x—Cs1—S1xi 56.32 (7)

S2vi—V1—S3viii 163.10 (9) S4—Cs1—S2v 51.46 (5)

S3vii—V1—S3viii 89.17 (14) S4ix—Cs1—S2v 104.46 (6)

S2—V1—S1 82.00 (9) S3x—Cs1—S2v 152.36 (6)

S2vi—V1—S1 90.23 (9) S3xi—Cs1—S2v 52.07 (6)

S3vii—V1—S1 82.78 (9) S1xii—Cs1—S2v 62.18 (5)

S3viii—V1—S1 105.93 (10) S1—Cs1—S2v 93.15 (5)

S2—V1—S1vi 90.23 (9) S2xiii—Cs1—S2v 113.26 (3)

S2vi—V1—S1vi 82.00 (9) S2viii—Cs1—S2v 110.11 (7)

S3vii—V1—S1vi 105.93 (10) S1x—Cs1—S2v 155.91 (5)

S3viii—V1—S1vi 82.78 (9) S1xi—Cs1—S2v 100.47 (5)

S1—V1—S1vi 168.01 (17) S4—Cs1—S2ix 104.46 (6)

S4—Cs1—S4ix 144.99 (12) S4ix—Cs1—S2ix 51.46 (5)

S4—Cs1—S3x 116.79 (5) S3x—Cs1—S2ix 52.07 (6)

S4ix—Cs1—S3x 71.38 (5) S3xi—Cs1—S2ix 152.36 (6)

S4—Cs1—S3xi 71.38 (5) S1xii—Cs1—S2ix 93.15 (5)

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S3x—Cs1—S3xi 154.77 (9) S2xiii—Cs1—S2ix 110.11 (7)

S4—Cs1—S1xii 113.50 (5) S2viii—Cs1—S2ix 113.26 (3)

S4ix—Cs1—S1xii 53.26 (4) S1x—Cs1—S2ix 100.47 (5)

S3x—Cs1—S1xii 124.00 (6) S1xi—Cs1—S2ix 155.91 (5)

S3xi—Cs1—S1xii 65.52 (6) S2v—Cs1—S2ix 103.25 (8)

References

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