inorganic papers
i6
Gutzmannet al. CsVP2S7 doi:10.1107/S1600536804031150 Acta Cryst.(2005). E61, i6±i8Acta Crystallographica Section E
Structure Reports
Online ISSN 1600-5368
CsVP
2S
7Andreas Gutzmann, Christian NaÈther and Wolfgang Bensch*
Institut fuÈr Anorganische Chemie, Christian-Albrechts-UniversitaÈt Kiel, Olshausenstraûe 40, D-24089 Kiel, Germany
Correspondence e-mail: [email protected]
Key indicators Single-crystal X-ray study
T= 293 K
Mean(S±P) = 0.004 AÊ
Rfactor = 0.046
wRfactor = 0.100
Data-to-parameter ratio = 23.2
For details of how these key indicators were automatically derived from the article, see http://journals.iucr.org/e.
#2005 International Union of Crystallography Printed in Great Britain ± all rights reserved
The quaternary vanadium thiophosphate CsVP2S7 (caesium
vanadium diphosphorus heptasul®de) was synthesized by reacting a mixture of Cs2S3, V, P4S3and S. The crystal structure
is composed of VS6 octahedra, which are linked by
bitetrahedral [P2S7] groups to form two-dimensional anionic
[VP2S7]ÿlayers. The layers are stacked perpendicular to the
crystallographiccaxis and are separated by the Cs+ions. The
VS6octahedra, the [P2S7] groups and the Cs+ions are located
in special positions. CsVP2S7 is isostructural to KVP2S7and
RbVP2S7.
Comment
In the past few years, new quaternary thiophosphates have been synthesized applying alkali metal halides or the low-melting alkali metal thiophosphate ¯uxes. In general,Ax[PySz]
(A= alkali metal) ¯uxes are formed byin situfusion ofA2Sx,
P2S5and S. In our investigations of quaternary group IVand V
thiophosphates, we have tried to develop alternative routes for the preparation of new compounds by a systematic variation of the reaction parameters, e.g. the use of binary transition metal sul®des or phosphides or P4S3instead of P2S5as educts.
Applying this technique, several new quaternary thio-phosphates with interesting structural features, such as
A3M2P5S18(A= Rb and Cs, andM= Zr and Hf; Gutzmannet
al., 2004a,b), K4VP2S9(Gutzmannet al., 2004c), Rb2Nb2P2S11
(Gutzmann & Bensch, 2002), Rb4Ta4P4S24 (Gutzmann &
Bensch, 2003), K0.38TaPS6and Rb0.46TaPS6(Gutzmannet al.,
2004d), have been obtained, demonstrating the high synthetic potential of the chemistry in alkali metal polythiophosphate ¯uxes. Analyzing the structures of the known ternary and
quaternary vanadium thiophosphates, 1D-PV2S10 (Brec,
Ouvrard, Evain et al., 1983), 2D-P0.2VS2 (Brec, Ouvrard,
Freour et al., 1983), 2D-V0.78PS3(Ouvrard et al., 1985),
2D-V2P4S13 (Evain et al., 1985), 0D-K4VP2S9 (Gutzmann et al.,
2004a), 1D-K2VP2S7 (Tremel et al., 1995), 1D-NaV0.84P2S6
(Costeet al., 2003) and 2D-AVP2S7(A= K and Rb; Kopninet
al., 2000; Durandet al., 1993), most of the compounds contain VS6octahedra as the general structural motif. Exceptions are
PV2S10and K4VP2S9for which VS8and VS5polyhedra were
observed. Applying the very successful method presented for quaternary alkali metal thiophosphates, we synthesized CsVP2S7, which is isostructural toAVP2S7(A= K and Rb). We
report here on the synthesis and structural characterization of this compound.
The crystal structure of CsVP2S7 is built up of [VP2S7]ÿ
layers and Cs+ ions (Fig. 1). The [VP
2S7]ÿ anionic layers
extending in the (010) plane are separated by about 4 AÊ and are stacked perpendicular to [001] (Fig. 2). The charge
compensating Cs+ ions are situated between the layers. The
electronic situation of the title compound may be represented as [Cs+][V3+][P
2S74ÿ]. The main feature of this structure type is
the presence of VS6 octahedra, which are joined by [P2S7]
groups to form the layered [VP2S7]ÿ anion. The VÐS
distances of the strongly distorted octahedra range between 2.439 (3) and 2.457 (2) AÊ and are in good agreement with the data observed forAVP2S7(A= K and Rb; Kopninet al., 2000;
Durand et al., 1993). Each VS6octahedron is surrounded by
three symmetry-related pyrothiophosphate ligands sharing common edges with two [P2S7] units and sharing two common
corners with the two [PS4] tetrahedra of another bitetrahedral
[P2S7]4ÿ anion (Fig. 3). The PÐS bond lengths range from
2.008 (4) to 2.138 (4) AÊ. The longest PÐS bond is observed for the bridging S atom having bonds to two P atoms. The [PS4]
tetrahedra of the pyrothiophosphate ligands are strongly distorted, as is evidenced by the SÐPÐS angles. The connection scheme leads to the formation of cavities within the layers running along [001]. The Cs+cation is in a 12-fold
coordination of each six S atoms from two adjacent [VP2S7]ÿ
layers. The mean CsÐS distance is 3.768 AÊ and is in good agreement with the sum of the ionic radii [1.84 AÊ for S2ÿand
1.88 AÊ for Cs+ (CN12); Shannon, 1976]. Interestingly, the
anharmonic behavior of the alkali metal cation, as in the isostructural compoundsAMP2S7(A= K and Rb, andM= Cr,
V and In; Kopnin et al., 2000; Durand et al., 1993), is not observed. In the electron density map of the title compound a regular distribution around the Cs+position is observed. In the
isostructural K and Rb compounds, the alkali cations are
coordinated by eight S atoms, whereas the Cs+ions in the title
compound are surrounded by 12 S atoms. It is likely that this larger coordination number stabilizes the Cs+cation, leading
to the harmonic behavior.
Experimental
CsVP2S7 was obtained by the reaction of Cs2S3 (0.24 mmol), V (0.72 mmol), P4S3(0.24 mmol) and S (2.4 mmol). Cs2S3was prepared from a stoichiometric ratio of the elements in liquid ammonia under an argon atmosphere. In an N2-®lled glove-box, the starting materials were thoroughly mixed and loaded into a glass ampoule. After evacuation (10ÿ3 mbar) the ampoule was ¯ame-sealed and placed in a computer-controlled furnace. The sample was heated to 823 K within 24 h. After four days the sample was cooled to room temperature at a rate of 3 K hÿ1. To remove the excess Cs
xPySz¯ux, the resultant melt was washed with dryN,N-dimethylformamide and diethyl ether. The product was driedin vacuoand consisted of dark green needles which are stable in air and water. The yield based on vanadium was about 90%. The MIR spectra of CsVP2S7 displays strong absorptions at 598, 579, 526, 459 and 407 cmÿ1. These absorptions are in good agreement with the vibrational frequencies reported for Na2FeP2S7(Menzelet al., 1990) and may be assigned to PÐS stretching modes.
Crystal data CsVP2S7 Mr= 470.21
Monoclinic,C2 a= 8.6010 (17) AÊ b= 9.5176 (19) AÊ c= 6.7287 (13) AÊ
= 98.17 (3)
V= 545.23 (19) AÊ3 Z= 2
Dx= 2.864 Mg mÿ3
MoKradiation
Cell parameters from 68 re¯ections
= 10±15
= 5.77 mmÿ1 T= 293 (2) K Needle, green 0.150.050.05 mm
Data collection Philips PW1100 four-circle
diffractometer
!/scans
Absorption correction: numerical (X-SHAPEandX-RED; Stoe & Cie, 1998) Tmin= 0.701,Tmax= 0.738 1280 measured re¯ections 1205 independent re¯ections
979 re¯ections withI> 2(I) Rint= 0.044
max= 27.0 h= 0!10 k=ÿ12!12 l=ÿ8!8 3 standard re¯ections every 120 min intensity decay: none
inorganic papers
Acta Cryst.(2005). E61, i6±i8 Gutzmannet al. CsVP2S7
i7
Figure 1
Crystal structure of CsVP2S7, viewed in the direction of the
crystal-lographicbaxis.
Figure 2
Crystal structure of CsVP2S7, viewed in the direction of the
Refinement Re®nement onF2 R[F2> 2(F2)] = 0.046 wR(F2) = 0.100 S= 1.01 1205 re¯ections 52 parameters
w= 1/[2(Fo2) + (0.0566P)2P] whereP= (Fo2+ 2Fc2)/3
(/)max< 0.001 max= 1.49 e AÊÿ3 min=ÿ0.63 e AÊÿ3 Extinction correction: none Absolute structure: Flack (1983),
567 Friedel pairs Flack parameter:ÿ0.03 (4)
Table 1
Selected geometric parameters (AÊ,).
P1ÐS3 2.008 (4)
P1ÐS1 2.013 (3)
P1ÐS2 2.027 (4)
P1ÐS4 2.138 (3)
V1ÐS2ii 2.439 (3)
V1ÐS3iii 2.453 (3)
V1ÐS3v 2.453 (3)
V1ÐS1ii 2.457 (2)
Cs1ÐS4vi 3.5277 (13)
Cs1ÐS3vii 3.548 (3) Cs1ÐS3viii 3.548 (3) Cs1ÐS1ix 3.705 (2)
Cs1ÐS2x 3.711 (3)
Cs1ÐS2v 3.711 (3)
Cs1ÐS1vii 4.004 (3) Cs1ÐS1viii 4.004 (3)
Cs1ÐS2x 4.108 (3)
Cs1ÐS2vi 4.108 (3)
S3ÐP1ÐS1 110.13 (15)
S3ÐP1ÐS2 120.02 (16)
S1ÐP1ÐS2 105.32 (14)
S3ÐP1ÐS4 109.79 (15)
S1ÐP1ÐS4 102.84 (15)
S2ÐP1ÐS4 107.33 (14)
S2ÐV1ÐS2ii 99.35 (16) S2ÐV1ÐS3iii 163.10 (9) S2iiÐV1ÐS3iii 87.99 (9) S2ÐV1ÐS3v 87.99 (9) S2iiÐV1ÐS3v 163.10 (9)
S3iiiÐV1ÐS3v 89.17 (14)
S2ÐV1ÐS1 82.00 (9)
S2iiÐV1ÐS1 90.23 (9) S3iiiÐV1ÐS1 82.78 (9) S3vÐV1ÐS1 105.93 (10) S2ÐV1ÐS1ii 90.23 (9) S2iiÐV1ÐS1ii 82.00 (9) S3iiiÐV1ÐS1ii 105.93 (10) S3vÐV1ÐS1ii 82.78 (9) S1ÐV1ÐS1ii 168.01 (17)
Symmetry codes: (i) ÿx1;y;ÿz1; (ii) ÿx;y;ÿz1; (iii) xÿ1
2;yÿ12;z; (v) ÿx1
2;yÿ12;ÿz1; (vi)x;y;zÿ1; (vii)ÿx21;yÿ12;ÿz; (viii)x12;yÿ12;z; (ix) ÿx1;y;ÿz; (x)x1
2;yÿ12;zÿ1.
The absolute structure was determined and is, according to the Flack (1983) x test, in agreement with the selected setting. The highest peak in the difference electron density map is located 0.97 AÊ from Cs1, and the deepest hole 1.27 AÊ from S4.
Data collection:DIF4 (Stoe & Cie, 1992); cell re®nement:DIF4; data reduction:REDU4 (Stoe & Cie, 1992); program(s) used to solve structure: SHELXS97 (Sheldrick, 1997); program(s) used to re®ne structure: SHELXL97 (Sheldrick, 1997); molecular graphics: DIAMOND(Brandenburg, 1999); software used to prepare material for publication:XCIFinSHELXTL(Bruker, 1998).
Financial support by the state of Schleswig-Holstein and the Deutsche Forschungsgemeinschaft (DFG) is gratefully acknowledged.
References
Brandenburg, K. (1999). DIAMOND. Version 2.1c. Crystal Impact GbR, Bonn, Germany.
Brec, R., Ouvrard, G., Evain, M., Grenouilleau, P. & Rouxel, J. (1983).J. Solid State Chem.47, 174±184.
Brec, R., Ouvrard, G., Freour, R., Rouxel, J. & Soubeyroux, J. L. (1983).Mater. Res. Bull.18, 689±696.
Bruker (1998). SHELXTL. Version 5.1. Bruker AXS Inc., Madison, Wisconsin, USA.
Coste, S., Gautier, E., Evain, M., Bujoli-Doeuff, M., Brec, R., Jobic, S. & Kanatzidis, M. G. (2003).Chem. Mater.15, 2323±2327.
Durand, E., Evain, M. & Brec, R. (1993).J. Solid State Chem.102, 146±155. Evain, M., Brec, R., Ouvrard, G. & Rouxel, J. (1985).J. Solid State Chem.56,
12±20.
Flack, H. D. (1983).Acta Cryst.A39, 876±881.
Gutzmann, A. & Bensch, W. (2002).Solid State Sci.4, 835±840. Gutzmann, A. & Bensch, W. (2003).Solid State Sci.5, 1271±1276.
Gutzmann, A., NaÈther, C. & Bensch, W. (2004a).Solid State Sci.6, 205±211. Gutzmann, A., NaÈther, C. & Bensch, W. (2004b).Acta Cryst.E60, i42±i44. Gutzmann, A., NaÈther, C. & Bensch, W. (2004c).Acta Cryst.C60, i11±i13. Gutzmann, A., NaÈther, C. & Bensch, W. (2004d).Solid State Sci.6, 1155±1162. Kopnin, E., Coste, S., Jobic, S., Evain, M. & Brec, R. (2000).Mater. Res. Bull.
35, 1401±1410.
Menzel, F., Ohse, L. & Brockner, W. (1990).Heteroat. Chem.1, 357±362. Ouvrard, G., Freour, R., Brec, R. & Rouxel, J. (1985).Mater. Res. Bull.20,
1053±1062.
Shannon, R. D. (1976).Acta Cryst.A32, 751±767.
Sheldrick, G. M. (1997). SHELXS97 and SHELXL97. University of GoÈttingen, Germany.
Stoe & Cie (1992).DIF4 (Version 7.09X/DOS) andREDU4 (Version 7.03). Stoe & Cie GmbH, Darmstadt, Germany.
Stoe & Cie (1998).X-SHAPEandX-RED. Version 1.03. Stoe & Cie GmbH, Darmstadt, Germany.
Tremel, W., Kleinke, H., Derstroff, V. & Reisner, C. (1995).J. Alloys Compd.
219, 73±82.
inorganic papers
i8
Gutzmannet al. CsVP2S7 Acta Cryst.(2005). E61, i6±i8Figure 3
Crystal structure of CsVP2S7, with labeling and displacement parameters
drawn at the 50% probability level, showing the interconnection of the VS6octahedra through [P2S7] groups sharing common edges and corners.
[Symmetry codes: (i) 1ÿx,y, 1ÿz; (ii)ÿx,y,ÿz + 1; (iii)ÿ1 2+x, ÿ1
supporting information
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Acta Cryst. (2005). E61, i6–i8
supporting information
Acta Cryst. (2005). E61, i6–i8 [https://doi.org/10.1107/S1600536804031150]
CsVP
2S
7Andreas Gutzmann, Christian N
ä
ther and Wolfgang Bensch
Caesium vanadium diphosphorus heptasulfide
Crystal data CsVP2S7 Mr = 470.21 Monoclinic, C2 Hall symbol: C 2y a = 8.6010 (17) Å b = 9.5176 (19) Å c = 6.7287 (13) Å β = 98.17 (3)° V = 545.23 (19) Å3 Z = 2
F(000) = 440 Dx = 2.864 Mg m−3
Mo Kα radiation, λ = 0.71073 Å Cell parameters from 68 reflections θ = 10–15°
µ = 5.77 mm−1 T = 293 K Plate, green
0.15 × 0.05 × 0.05 mm
Data collection
Philips PW1100 4-circle-diffractometer
Radiation source: fine-focus sealed tube Graphite monochromator
ω/θ scans
Absorption correction: numerical
X-SHAPE and X-RED (Stoe & Cie, 1998) Tmin = 0.701, Tmax = 0.738
1280 measured reflections
1205 independent reflections 979 reflections with I > 2σ(I) Rint = 0.044
θmax = 27.0°, θmin = 3.1° h = 0→10
k = −12→12 l = −8→8
3 standard reflections every 120 min intensity decay: none
Refinement Refinement on F2 Least-squares matrix: full R[F2 > 2σ(F2)] = 0.046 wR(F2) = 0.100 S = 1.01 1205 reflections 52 parameters 1 restraint
Primary atom site location: structure-invariant direct methods
Secondary atom site location: difference Fourier map
w = 1/[σ2(F
o2) + (0.0566P)2P] where P = (Fo2 + 2Fc2)/3 (Δ/σ)max < 0.001
Δρmax = 1.49 e Å−3 Δρmin = −0.63 e Å−3
Absolute structure: Flack (1983) Absolute structure parameter: −0.03 (4)
Special details
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Acta Cryst. (2005). E61, i6–i8
Refinement. Refinement of F2 against ALL reflections. The weighted R-factor wR and goodness of fit S are based on F2, conventional R-factors R are based on F, with F set to zero for negative F2. The threshold expression of F2 > σ(F2) is used only for calculating R-factors(gt) etc. and is not relevant to the choice of reflections for refinement. R-factors based on F2 are statistically about twice as large as those based on F, and R- factors based on ALL data will be even larger.
Fractional atomic coordinates and isotropic or equivalent isotropic displacement parameters (Å2)
x y z Uiso*/Ueq
P1 0.3030 (3) 0.6425 (3) 0.4194 (4) 0.0169 (5)
S1 0.1582 (2) 0.5244 (3) 0.2257 (3) 0.0214 (6)
S2 0.1928 (3) 0.6633 (3) 0.6648 (4) 0.0235 (6)
S3 0.3703 (3) 0.8139 (3) 0.2801 (4) 0.0252 (6)
S4 0.5000 0.5068 (4) 0.5000 0.0175 (7)
V1 0.0000 0.4975 (2) 0.5000 0.0167 (5)
Cs1 0.5000 0.39532 (12) 0.0000 0.0370 (4)
Atomic displacement parameters (Å2)
U11 U22 U33 U12 U13 U23
P1 0.0134 (11) 0.0173 (14) 0.0202 (11) −0.0010 (9) 0.0027 (9) 0.0009 (10)
S1 0.0153 (11) 0.0275 (15) 0.0214 (12) −0.0070 (11) 0.0023 (9) −0.0025 (11)
S2 0.0214 (12) 0.0228 (15) 0.0284 (12) −0.0062 (10) 0.0109 (10) −0.0090 (11)
S3 0.0254 (13) 0.0223 (14) 0.0255 (13) −0.0077 (11) −0.0044 (10) 0.0067 (11)
S4 0.0171 (15) 0.0133 (18) 0.0219 (16) 0.000 0.0015 (11) 0.000
V1 0.0134 (10) 0.0162 (13) 0.0211 (11) 0.000 0.0048 (8) 0.000
Cs1 0.0264 (5) 0.0629 (8) 0.0216 (5) 0.000 0.0029 (4) 0.000
Geometric parameters (Å, º)
P1—S3 2.008 (4) S4—Cs1iii 3.5277 (13)
P1—S1 2.013 (3) V1—S2vi 2.439 (3)
P1—S2 2.027 (4) V1—S3vii 2.453 (3)
P1—S4 2.138 (3) V1—S3viii 2.453 (3)
P1—Cs1 4.211 (3) V1—S1vi 2.457 (2)
S1—V1 2.457 (2) Cs1—S4ix 3.5277 (13)
S1—Cs1 3.705 (2) Cs1—S3x 3.548 (3)
S1—Cs1i 4.004 (3) Cs1—S3xi 3.548 (3)
S2—V1 2.439 (3) Cs1—S1xii 3.705 (2)
S2—Cs1ii 3.711 (3) Cs1—S2xiii 3.711 (3)
S2—Cs1iii 4.108 (3) Cs1—S2viii 3.711 (3)
S3—V1iv 2.453 (3) Cs1—S1x 4.004 (3)
S3—Cs1i 3.548 (3) Cs1—S1xi 4.004 (3)
S4—P1v 2.138 (3) Cs1—S2v 4.108 (3)
S4—Cs1 3.5277 (13) Cs1—S2ix 4.108 (3)
S3—P1—S1 110.13 (15) S4—Cs1—S1 53.26 (4)
S3—P1—S2 120.02 (16) S4ix—Cs1—S1 113.50 (5)
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Acta Cryst. (2005). E61, i6–i8
S3—P1—S4 109.79 (15) S3xi—Cs1—S1 124.00 (6)
S1—P1—S4 102.84 (15) S1xii—Cs1—S1 141.26 (9)
S2—P1—S4 107.33 (14) S4—Cs1—S2xiii 144.98 (6)
S3—P1—Cs1 88.33 (12) S4ix—Cs1—S2xiii 62.54 (6)
S1—P1—Cs1 61.64 (9) S3x—Cs1—S2xiii 89.55 (6)
S2—P1—Cs1 151.62 (12) S3xi—Cs1—S2xiii 75.41 (6)
S4—P1—Cs1 56.81 (6) S1xii—Cs1—S2xiii 59.95 (6)
P1—S1—V1 85.96 (11) S1—Cs1—S2xiii 153.56 (6)
P1—S1—Cs1 89.81 (10) S4—Cs1—S2viii 62.54 (6)
V1—S1—Cs1 146.05 (10) S4ix—Cs1—S2viii 144.98 (6)
P1—S1—Cs1i 84.21 (11) S3x—Cs1—S2viii 75.41 (6)
V1—S1—Cs1i 100.51 (9) S3xi—Cs1—S2viii 89.55 (6)
Cs1—S1—Cs1i 112.55 (6) S1xii—Cs1—S2viii 153.56 (6)
P1—S2—V1 86.14 (12) S1—Cs1—S2viii 59.95 (6)
P1—S2—Cs1ii 148.66 (13) S2xiii—Cs1—S2viii 106.97 (9)
V1—S2—Cs1ii 109.13 (8) S4—Cs1—S1x 125.51 (7)
P1—S2—Cs1iii 92.75 (11) S4ix—Cs1—S1x 87.10 (6)
V1—S2—Cs1iii 100.99 (9) S3x—Cs1—S1x 51.32 (5)
Cs1ii—S2—Cs1iii 110.11 (7) S3xi—Cs1—S1x 103.88 (6)
P1—S3—V1iv 115.70 (13) S1xii—Cs1—S1x 112.55 (6)
P1—S3—Cs1i 97.41 (11) S1—Cs1—S1x 101.61 (4)
V1iv—S3—Cs1i 117.51 (10) S2xiii—Cs1—S1x 53.27 (5)
P1v—S4—P1 105.7 (2) S2viii—Cs1—S1x 63.18 (6)
P1v—S4—Cs1 108.42 (7) S4—Cs1—S1xi 87.10 (6)
P1—S4—Cs1 92.71 (7) S4ix—Cs1—S1xi 125.51 (7)
P1v—S4—Cs1iii 92.71 (7) S3x—Cs1—S1xi 103.88 (6)
P1—S4—Cs1iii 108.42 (7) S3xi—Cs1—S1xi 51.32 (5)
Cs1—S4—Cs1iii 144.99 (12) S1xii—Cs1—S1xi 101.61 (4)
S2—V1—S2vi 99.35 (16) S1—Cs1—S1xi 112.55 (6)
S2—V1—S3vii 163.10 (9) S2xiii—Cs1—S1xi 63.18 (6)
S2vi—V1—S3vii 87.99 (9) S2viii—Cs1—S1xi 53.27 (5)
S2—V1—S3viii 87.99 (9) S1x—Cs1—S1xi 56.32 (7)
S2vi—V1—S3viii 163.10 (9) S4—Cs1—S2v 51.46 (5)
S3vii—V1—S3viii 89.17 (14) S4ix—Cs1—S2v 104.46 (6)
S2—V1—S1 82.00 (9) S3x—Cs1—S2v 152.36 (6)
S2vi—V1—S1 90.23 (9) S3xi—Cs1—S2v 52.07 (6)
S3vii—V1—S1 82.78 (9) S1xii—Cs1—S2v 62.18 (5)
S3viii—V1—S1 105.93 (10) S1—Cs1—S2v 93.15 (5)
S2—V1—S1vi 90.23 (9) S2xiii—Cs1—S2v 113.26 (3)
S2vi—V1—S1vi 82.00 (9) S2viii—Cs1—S2v 110.11 (7)
S3vii—V1—S1vi 105.93 (10) S1x—Cs1—S2v 155.91 (5)
S3viii—V1—S1vi 82.78 (9) S1xi—Cs1—S2v 100.47 (5)
S1—V1—S1vi 168.01 (17) S4—Cs1—S2ix 104.46 (6)
S4—Cs1—S4ix 144.99 (12) S4ix—Cs1—S2ix 51.46 (5)
S4—Cs1—S3x 116.79 (5) S3x—Cs1—S2ix 52.07 (6)
S4ix—Cs1—S3x 71.38 (5) S3xi—Cs1—S2ix 152.36 (6)
S4—Cs1—S3xi 71.38 (5) S1xii—Cs1—S2ix 93.15 (5)
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S3x—Cs1—S3xi 154.77 (9) S2xiii—Cs1—S2ix 110.11 (7)
S4—Cs1—S1xii 113.50 (5) S2viii—Cs1—S2ix 113.26 (3)
S4ix—Cs1—S1xii 53.26 (4) S1x—Cs1—S2ix 100.47 (5)
S3x—Cs1—S1xii 124.00 (6) S1xi—Cs1—S2ix 155.91 (5)
S3xi—Cs1—S1xii 65.52 (6) S2v—Cs1—S2ix 103.25 (8)