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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP504A,TLP504A−
−−
−2
Programmable Controllers
AC / DC−Input Module
Solid State Relay
The TOSHIBA TLP504A and TLP504A−2 consists of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.
The TLP504A offers two isolated channels in a eight lead plastic DIP package, while the TLP504A−2 provides four isolated channels in a sixteen plastic DIP package. · Collector−emitter voltage: 55 V (min.)
· Current transfer ratio: 50% (min.) Rank GB: 100% (min.)
· Isolation voltage: 2500 Vrms (min.) · UL recognized: UL1577,
File no. E67349
Pin Configurations (top view)
1, 4 : Anode 2, 3 : Cathode 5, 8 : Emitter 6, 7 : Collector TLP504A TLP504A-2 1 2 7 8 3 4 5 6 5 6 11 12 7 8 9 10 1 2 15 16 3 4 13 14 1, 4, 5, 8 2, 3, 6, 7 9, 12, 13, 16 10, 11, 14, 15 : Anode : Cathode : Emitter : Collector Unit in mm TOSHIBA 11−10C4 Weight: 0.54 g TOSHIBA 11−20A3 Weight: 1.1 g
Maximum Ratings (Ta = 25°C)
Rating Characteristic Symbol
TLP504A TLP504A-2 Unit
Forward current IF 60 50 mA
Forward current derating ∆IF / °C -0.7 (Ta ≥ 39°C) -0.5 (Ta ≥ 25°C) mA /°C
Pulse forward current IFP 1 (100µs pulse, 100pps) A
Reverse voltage VR 5 V
LE
D
Junction temperature Tj 125 °C
Collector-emitter voltage VCEO 55 V
Emitter-collector voltage VECO 7 V
Collector current IC 50 mA
Collector power dissipation
(1 circuit) PC 150 100 mW
Collector power dissipation
derating (1 circuit Ta ≥ 25°C) ∆PC / °C -1.5 -1.0 mW /°C
Det
ec
tor
Junction temperature Tj 125 °C
Storage temperature range Tstg -55~150 °C
Operating temperature range Topr -55~100 °C
Lead soldering temperature Tsol 260 (10 s) °C
Total package power dissipation RT 250 150 mW
Total package power dissipation
derating (Ta ≥ 25°C) ∆PT / °C -2.5 -1.5 mW / °C
Isolation voltage BVS 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms
(Note 1) Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.
Recommended Operating Conditions
Characteristics Symbol Min. Typ. Max. Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 20 mA
Collector current IC ― 1 10 mA
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Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V
Reverse current IR VR = 5 V — — 10 µA
LE
D
Capacitance CT V = 0, f = 1 MHz — 30 — pF
Collector-emitter
breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V
Emitter-collector
breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V
VCE = 24 V — 10 100 nA
Collector dark current ICEO
VCE = 24 V, Ta = 85°C — 2 50 µA Det ec tor Capacitance collector to emitter CCE V = 0, f = 1 MHz — 10 — pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit 50 — 600
Current transfer ratio IC / IF IF = 5 mA, VRank GB CE = 5 V
100 — 600 %
— 60 — Saturated CTR IC / IF (sat) IF = 1 mA, VRank GB CE = 0.4 V
30 — — %
IC = 2.4 mA, IF = 8 mA — — 0.4 — 0.2 — Collector-emitter
saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB — — 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit Capacitance input to output CS VS = 0, f = 1 MHz — 0.8 — pF
Isolation resistance RS VS = 500 V 5×1010 1014 — Ω
AC, 1 minute 2500 — —
AC, 1 second, in oil — 5000 — Vrms
Isolation voltage BVS
Switching Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Rise time tr — 2 —
Fall time tf — 3 —
Turn-on time ton — 3 —
Turn-off time toff
VCC = 10 V, IC = 2 mA RL = 100Ω
— 3 — µs
Turn-on time tON — 2 —
Storage time ts — 15 —
Turn-off time tOFF
RL = 1.9 kΩ (Fig.1) VCC = 5 V, IF = 16 mA
— 25 — µs
Fig. 1 Switching time test circuit
VCC VCE IF RL IF VCE VCC
t
ON 4.5V 0.5Vt
OFFt
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Fo rw ar d v ol tag e t em per atu re coef fici en t Δ VF /Δ Ta (m R V / ℃ ) ΔVF/ΔTa – IF 0.1 -2.0 -2.4 -2.8 -0.4 0.3 -1.6 -1.2 -0.8 1 3 10 30Forward current IF (mA)
IFP – VFP P ul se f orw ar d c ur ren t I FP ( m A )
Pulse forward voltage VFP (V)
1000 500 0 3 50 5 300 30 10 100 1 0.4 0.8 1.0 1.2 1.4 1.6 Pulse width ≤ 10µs Repetitive frequency=100Hz Ta = 25℃ Forward voltage VF (V) IF – VF Fo rw ar d c ur re nt I F ( m A ) 100 50 0.4 0.3 5 0.5 30 3 1 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 Ta = 25℃ A llo w abl e p ul se fo rw a rd cur ren t I FP (m A )
Duty cycle ratio DR
IFP – DR 5000 3000 3 3 10-3 3 10 1000 500 30 100 50 300 10-1 10-2 3 100 Pulse width ≤ 100µs Ta = 25℃ PC – Ta A llo w abl e c ol le ct or pow er di ssi pati o n P C (m W ) Ambient temperature Ta (℃) 240 160 -20 0 120 80 40 120 100 80 60 20 40 0 200 TLP504A TLP504A-2 IF – Ta A llo w abl e f orw ard cu rr ent I F ( m A ) Ambient temperature Ta (℃) 100 80 -20 0 60 40 20 120 120 100 80 60 20 40 0 TLP504A TLP504A-2
ICEO – Ta C ol le ct or da rk cu rr en t I CE O ( μ A) Ambient temperature Ta (℃) 101 100 10-1 80 60 40 20 0 100 10-2 10-3 120 10-4 IC – IF Co lle ct or cu rr en t IC (mA )
Forward current IF (mA)
0.3 100 50 10 5 0.3 0.5 0.1 3 1 1 3 10 30 100 30 0.05 0.03 Ta = 25°C VCE = 5V VCE = 0.4V SAMPLE A SAMPLE B Collector-emitter voltage VCE (V) Co lle ct or cu rr e nt IC ( m A ) IC – VCE 50mA 80 10 8 4 6 0 2 60 40 20 0 Ta = 25℃ 20mA 15mA PC(MAX.) IF=5mA 30mA 10mA Collector-emitter voltage VCE (V) Co lle ct or cu rr e nt IC ( m A ) IC – VCE 25 1.0 0.8 0.4 0.6 0.2 20 15 10 0 0 5 1.2 1.4 50mA 40mA 30mA 20mA 10mA 5mA IF=2mA Ta = 25℃ IC / IF – IF C urr en t tr an sf er ra tio I C / IF (% )
Forward current IF (mA)
5 500 300 50 30 1 0.3 10 100 10 30 100 3 Ta = 25°C VCE = 5V VCE = 0.4V SAMPLE A SAMPLE B VCE = 24V 5V 10V
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IF = 5mA IC = 1mA Ambient temperature Ta (℃) C ol le ct or -e mi tte r s atu rati on vol ta ge VCE(sat) (V ) VCE (sat) – Ta 100 80 60 20 40 0 -20 0.20 0.16 0.12 0.08 0.04 0 80 60 20 40 0 -20 0.3 0.1 100 10 5 30 100 50 3 1 0.5 VCE = 5V Ambient temperature Ta (℃) Co lle ct or cu rr e nt I C (m A ) IC – Ta IF = 0.5mA 1mA 5mA 10mA 25mA Load resistance RL (kΩ) RL – Switching Time Switch in g ti m e ( μ s) 1 tON 1000 500 300 100 50 30 10 5 3 3 10 30 100 300 1 Ta = 25°C IF = 16mA VCC = 5V ts tOFF· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.
000707EBC