TLP521 1,TLP521 2,TLP521 4

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TOSHIBA Photocoupler GaAs Ired & Photo−Transistor

TLP521−

−−

−1,TLP521−

−−

−2,TLP521−

−−

−4

Programmable Controllers

AC/DC−Input Module

Solid State Relay

The TOSHIBA TLP521−1, −2 and −4 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode.

The TLP521−2 offers two isolated channels in an eight lead plastic DIP package, while the TLP521−4 provides four isolated channels in a sixteen plastic DIP package.

· Collector−emitter voltage: 55 V (min) · Current transfer ratio: 50% (min)

Rank GB: 100% (min)

· Isolation voltage: 2500 Vrms (min) · UL recognized

made in Japan: UL1577, file No. E67349 made in Thailand: UL1577, file No. E152349

Pin Configurations (top view)

1, 3 : Anode 2, 4 : Cathode 5, 7 : Emitter 6, 8 : Collector TLP521-2 1 2 7 8 3 4 5 6 1, 3, 5, 7 2, 4, 6, 8 9, 11, 13, 15 10, 12, 14, 16 : Anode : Cathode : Emitter : Collector TLP521-4 5 6 11 12 7 8 ₉ 10 1 2 15 16 3 4 13 14 TLP521-1 1 2 3 4 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector TOSHIBA 11−5B2 Weight: 0.26 g TOSHIBA 11−10C4 Weight: 0.54 g TOSHIBA 11−20A3 Weight: 1.1 g Unit in mm

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Maximum Ratings (Ta = 25°C)

Rating Characteristic Symbol TLP521_-1 TLP521_TLP521-2 -4 Unit Forward current I_F 70 50 mA

Forward current derating ∆IF /°C -0.93 (Ta ≥ 50°C) -0.5 (Ta ≥ 25°C) mA /°C

Pulse forward current I_FP 1 (100µ pulse, 100pps) A

Reverse voltage V_R 5 V

LE

D

Junction temperature T_j 125 °C

Collector_{-emitter voltage} V_CEO 55 V

Emitter-collector valtage V_ECO 7 V

Collector current I_C 50 mA

Collector power dissipation

(1 circuit) PC 150 100 mW

Collector power dissipation

derating (1 circuit Ta ≥ 25°C) ∆PC /°C -1.5 -1.0 mW /°C

Det

ec

tor

Junction temperature T_j 125 °C

Storage temperature range T_stg -55~125 °C

Operating temperature range T_{opr -55~100 °C}

Lead soldering temperature T_sol 260 (10 s) °C

Total package power dissipation P_T 250 150 mW

Total package power dissipation

derating (Ta ≥ 25°C) ∆PT /°C -2.5 -1.5 mW /°C

Isolation voltage BV_S 2500 (AC, 1min., R.H.≤ 60%) (Note 1) Vrms

(Note 1): Device considered a two terminal device: LED side pins shorted together and detector side pins shorted together.

Recommended Operating Conditions

Characteristic Symbol Min Typ. Max Unit

Supply voltage V_CC ― 5 24 V

Forward current I_F ― 16 25 mA

Collector current IC ― 1 10 mA

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Current Transfer Ratio (%) (I_C / I_F) I_F = 5mA, V_CE = 5V, Ta = 25°C Type Classi- fication (*1) Min Max Marking Of Classification A 50 600 Blank, Y, Y■_{, G, G}■_{, B, B}■_{, GB} Rank Y 50 150 Y, Y■ Rank GR 100 300 G, G■ Rank BL 200 600 B, B■ TLP521 Rank GB 100 600 G, G■_{, B, B}■_{, GB} A 50 600 Blank, GR, BL, GB TLP521_-2 TLP521-4 _{Rank GB 100 600 GR, BL, GB} *1: Ex. rank GB: TLP521_{-1 (GB)}

(Note): Application type name for certification test, please use standard product type name, i.e. TLP521_{-1 (GB): TLP521-1, TLP521-2 (GB): TLP521-2}

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Individual Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V

Reverse current I_R V_R = 5 V — — 10 µA

LE

D

Capacitance C_T V = 0, f = 1 MHz — 30 — pF

Collector_-emitter

breakdown voltage V(BR) CEO IC = 0.5 mA 55 — — V

Emitter_-collector

breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V

V_CE = 24 V — 10 100 nA

Collector dark current I_CEO

V_CE = 24 V, Ta = 85°C — 2 50 µA Det ec tor Capacitance (collector to emitter) CCE V = 0, f = 1 MHz — 10 — pF

Coupled Electrical Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition MIn Typ. Max Unit 50 — 600

Current transfer ratio IC / IF IF = 5 mA, V_{Rank GB} CE = 5 V

100 — 600 %

— 60 — Saturated CTR I_C / I_{F (sat)} IF = 1 mA, V_{Rank GB} CE = 0.4 V

30 — — %

I_C = 2.4 mA, I_F = 8 mA — — 0.4 — 0.2 — Collector-emitter

saturation voltage VCE (sat) I_C = 0.2 mA, I_F = 1 mA

Rank GB _{— — 0.4}

V

Isolation Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit Capacitance

(input to output) CS VS = 0, f = 1 MHz — 0.8 — pF

Isolation resistance R_S V_S = 500 V, R.H.≤ 60% — 1011 _{— Ω}

AC, 1 minute 2500 — —

AC, 1 second, in oil — 5000 — Vrms

Isolation voltage BV_S

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Switching Characteristics (Ta = 25°C)

Characteristic Symbol Test Condition Min Typ. Max Unit

Rise time tr — 2 —

Fall time t_f — 3 —

Turn-on time ton — 3 —

Turn_{-off time} t_off

V_CC = 10 V I_C = 2 mA R_L = 100Ω

— 3 — µs

Turn-on time t_ON — 2 —

Storage time t_s — 15 —

Turn_{-off time} t_OFF

R_L = 1.9 kΩ (Fig.1) V_CC = 5 V, I_F = 16 mA — 25 — µs IF VCE VCC t_ON 4.5V 0.5V tOFF tS VCC VCE

Fig.1 : SWITCHING TIME TEST CIRCUIT IF

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Ambient temperature Ta (°C) IF – Ta A llo w abl e fo rw a rd cu rre nt I F ( m A ) 100 80 -20 0 60 40 20 100 80 60 20 40 0 TLP521-1 Ambient temperature Ta (°C) IF – Ta A llo w abl e fo rw a rd cu rre nt I F ( m A ) TLP521-2 TLP521-4 100 80 -20 0 60 40 20 100 80 60 20 40 0 Ambient temperature Ta (°C) PC – Ta A llo w abl e col lect or pow er di ssi pati o n P C (m W ) 240 160 -20 0 120 80 40 100 80 60 20 40 0 200 TLP521-1 IFP – DR A llo w abl e p ul se fo rw a rd cur ren t I FP (m A )

Duty cycle ratio DR

3000 3 3 10-3 3 10 1000 500 30 100 50 300 10-1 10-2 _{3 10}0 Pulse width ≤ 100µs Ta = 25°C TLP521-1 PC – Ta A llo w abl e col lect or pow er di ssi pati o n P C (m W ) 120 80 -20 0 60 40 20 100 80 60 20 40 0 100 TLP521-2 TLP521-4 Ambient temperature Ta (°C) IFP – DR A llo w abl e p ul se fo rw a rd cur ren t I FP (m A )

Duty cycle ratio DR

3000 3 3 10-3 3 10 1000 500 30 100 50 300 10-1 10-2 _{3 10}0 Pulse width ≤ 100µs Ta = 25°C TLP521-2 TLP521-4

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Forward voltage VF (V) IF – VF Fo rw ar d cu rr en t I F (m A ) 100 50 0.4 0.3 5 0.5 30 3 1 10 0.1 0.6 0.8 1.0 1.2 1.4 1.6 Ta=25°C Fo rw ar d v ol tage te mp er atu re coef fici en t ∆ VF /∆ Ta ( m V /° C ) ∆V_F/∆Ta – I_F

Forward current I_F (mA)

0.1 -2.0 -2.4 -2.8 -0.4 0.3 -1.6 -1.2 -0.8 1 3 10 30 IFP – VFP P ul se f orw ar d cu rr ent IFP (m A )

Pulse forward voltage VFP (V)

1000 500 0 3 50 5 300 30 10 100 1 0.4 0.8 1.2 1.6 2.0 2.4 Pulse width ≤10µs Repetitive frequency =100Hz Ta = 25°C ICEO – Ta Ambient temperature Ta (℃) 101 100 10-1 160 120 80 40 0 10-2 10-3 10-4 10V 5V VCE=24V C ol le ct or da rk cu rr en t I CE O ( µ A ) Collector-emitter voltage VCE (V) Co lle ct or cu rr e nt I C ( m A ) IC – VCE 25 1.0 0.8 0.4 0.6 0.2 20 15 10 0 0 5 1.2 1.4 Ta=25°C 50mA 10mA 20mA 5mA IF=2mA 30mA 40mA Collector-emitter voltage VCE (V) Co lle ct or cu rr e nt I C ( m A ) IC – VCE 50mA 10mA 20mA 15mA PC(MAX.) IF=5mA 30mA 80 10 8 4 6 0 2 60 40 20 0 Ta=25°C

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Ambient temperature Ta (℃) Co lle ct or cu rr e nt I C (m A ) IC – Ta 80 60 20 40 0 -20 0.3 0.1 100 10 5 30 100 50 IF = 0.5mA 3 1 0.5 1mA 5mA 10mA 25mA VCE = 5V IC/IF – IF C ur ren t t ran sfe r r ati o I C /IF (% )

Forward current IF (mA) Ta = 25°C VCE=5V VCE=0.4V 500 300 50 30 1 0.3 10 5 100 10 30 100 3 Sample A Sample B Ambient temperature Ta (℃) C ol le ct or -e mi tte r s atu rati on vol ta ge VCE(sat) (V ) VCE(sat) – Ta 100 80 60 20 40 0 -20 0.20 0.16 0.12 0.08 0.04 0 IF = 5mA IC = 1mA IC – IF Co lle ct or cu rr e nt IC ( m A )

Forward current IF (mA)

100 50 10 5 0.3 0.5 0.1 3 1 0.3 1 3 10 30 100 30 0.05 0.03 Ta = 25°C VCE=5V VCE=0.4V Sample A Sample B RL – Switching Time Switch in g ti m e ( µ s) Load resistance RL (kΩ) 1000 500 300 100 50 30 10 5 3 1 3 10 30 100 300 1 Ta = 25°C IF = 16mA VCC= 5V tON tOFF tS

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· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property.

In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage.

· The products described in this document are subject to the foreign exchange and foreign trade laws.

· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

· The information contained herein is subject to change without notice.

000707EBC

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