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Schottky Barriers on Layered Anisotropic Semiconductor – WSe2 – with 1000 Å Indium Metal Thickness

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Figure

Figure 1. Experimental and simulated I–V curve of  In-pWSe2 (1000 Ǻ) Schottky diode at different tempera-tures
Figure 3. Zero bias barrier height, flat band barrier height  and ideality factor of In-pWSe2 (1000 Ǻ) Schottky diode at different temperatures
Figure 6. Modified Richardson plot of In-pWSe2 (1000 Ǻ) Schottky diode.
Table 1. A comparative table of In-pWSe2 Schottky diode parameters with different metal thicknesses

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