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Institute of Experimental and Applied Physics

Feasibility study on polyparylene

deposition in a PECVD reactor

E. v. Wahl

1

, C Kirchberg

2

, M. Fröhlich

3

, H. Kersten

1

4

th

Graduate Summer Institute ''Complex Plasmas''

August 5

th

, 2014

1 IEAP, Group Plasma Technology, University of Kiel 2 ITAP, University of Kiel

(2)

Erik v. Wahl Plasma Technology August 5th, 2014 2

outline

1. Introduction to parylene

2. The setup

3. Langmuir probe measurements

4. Electrical measurements

5. REM

(3)

Parylene

Group of polymers

properties can be tuned by

choosing substituents

Illustrations: SCS Specialty Coating Systems

crevice penetrating

UV stable

low permeability to

moisture and corrosive

gases

crevice penetrating

high temperature applications

low permeability to moisture and

corrosive gases

(4)

Erik v. Wahl Plasma Technology August 5th, 2014 4

Parylene properties

Illustrations: SCS Specialty Coating Systems

transparent

hydrophobic

low friction coefficient

low gas permeability

biostable

biocompatible

high chemical resistivity

oxidation resistant up to 350

°

C / 662

°

F

(5)

Parylene

(6)

Erik v. Wahl Plasma Technology August 5th, 2014 6

Parylene

Group of polymers

properties can be tuned

by choosing substituents

(7)

Conventional deposition process

1100 - 1300

°

F

600 -700

°

C

< 194

°

F

< 90

°

C

the precursor -

a dimer

highly reactive

monomer

parylene C -

a linear polymer

(8)

Erik v. Wahl Plasma Technology August 5th, 2014 8

PECVD process

P

PECVD

1100 - 1300

°

F

600 -700

°

C

< 194

°

F

< 90

°

C

(9)

PECVD process

P

PECVD

Investigations:

analyse deposited films

- profilometer measurements

- electron microscopy

- contact angle measurements

analyse plasma process

- langmuir measurements

- electrical measurements

1100 - 1300

°

F

600 -700

°

C

< 194

°

F

< 90

°

C

(10)

Erik v. Wahl Plasma Technology August 5th, 2014 10

ATILA

capacitively coupled

rf-discharge

evaporator

4 vacuum gauges

(11)

ATILA - substrates

silicon wafer

glas plates

metal plates

(12)

Erik v. Wahl Plasma Technology August 5th, 2014 12

(13)

substrate positioning

a

b

c

d

(outside of intense

plasma glow)

b

c

(14)

Erik v. Wahl Plasma Technology August 5th, 2014 14

Sublimation of the precursor

too

cold

too

warm

(15)

profilometer measurements

too less precursor:

• negative step

sputtering dominates

too much precursor:

• positive step

• dust formation (easily

removable)

(16)

Erik v. Wahl Plasma Technology August 5th, 2014 16

profilometer measurements

temperature /

°

C

coating thick-

ness / nm

observations

duration

/ min

P / W

148…150

- 43.3

±

4.2

blocked by condensation

30

10

200…220

- 162.6

±

45.1

dust

15

30

185…190

6430

±

188

resublimation on substrate

before ignition, dust

10

20

130…157

72.3

±

10.7

dust

20

20

120…155

388.8

±

13.2

dust

110

30

process

pressure of

13.6 Pa

(17)

langmuir probe measurements

pickup-probe for passive

rf-compensation

probe tip

ceramic / glas

probe box

(18)

Erik v. Wahl Plasma Technology August 5th, 2014 18

langmuir probe measurements

argon

p

Baratron

= 6.4 Pa

P

= 10 W

V

bias

= 273 V

T

e

= 2.63 eV

n

e

= 9.6∙10

15

m

-3

U

fl

= 14,8 V U

pl

= 35,3 V

(19)

langmuir probe measurements during deposition process

(20)

Erik v. Wahl Plasma Technology August 5th, 2014 20

langmuir probe measurements during deposition process

(21)

20 sccm argon, P = 10W, p = 10,5Pa

langmuir probe measurements during deposition process

212

°

F

100

°

C

(22)

Erik v. Wahl Plasma Technology August 5th, 2014 22

langmuir probe measurements during deposition process

probe tip dirty

shape of drop at probe tip

different kinds of coating

(23)

electrical measurements

(24)

Erik v. Wahl Plasma Technology August 5th, 2014 24

electrical measurements

coating of window

increase in resistivity

→ inelastic collisions

decrease of n

e

collisions with particles

(25)

electrical measurements

(26)

Erik v. Wahl Plasma Technology August 5th, 2014 26

electrical measurements

continous

particle formaiton?

periodical particle formation

emission intensity also fluctuating

resistivity increasing, when V

bias

decreasing

210 °F

(27)
(28)

Erik v. Wahl Plasma Technology August 5th, 2014 28

(29)

contact angle measurements

problem:

dust changes the surface

energy

can be used to gain

superhydrophoby or

superhydropholy

parylene coating

total energy σ

total

= 64.54

±

23.25 mN/m

dispersive energy σ

d

= 7.35

±

13.30 mN/m

(30)

Erik v. Wahl Plasma Technology August 5th, 2014 30

electrical measurements

(31)

summary

The properties of depositing parylene are strongly

dependent on the temperature at which sublimation

occurs.

Polymerisation took place.

Low discharge power is enough to initialize

polymerisation.

No undesired byproducts / chemical decompounds

could be found.

(32)

Erik v. Wahl Plasma Technology August 5th, 2014 32

outlook

More deposition trials are needed in order to obtain a

clean thin film deposition.

Contact angle measurements have to be done on

samples without dust.

Mass spectrometry could give an insight into the chemical

reactions.

(33)

literature

[1] Phil Morten Hundt, Diplomarbeit,

Spektroskopische Diagnostik an Prozessplasmen

,

CAU 2009

[2] J. Berndt, E. Kovacevic, I. Stefanovic, O. Stepanovic, S. H. Hong, L. Boufendi and J.

Winter,

Some Aspects of Reactive Complex Plasmas

. Contrib. Plasma Phys., vol.

49,

107–133 (2009).

[3] S. A. Khrapak et al., Phys. Rev. E 72, 016406 (2005)

[4] Hollenstein, Ch.:

The physics and chemistry of dusty plasmas

. Plasma Physics and

Controlled Fusion, 42:R93–R104, 2000

[5] Bouchoule, A. (Herausgeber):

Dusty Plasmas - Physics, Chemistry and Technological

Impacts in Plasma Processing

. Wiley-VCH Verlag, 1999

[6] Cui, C. und J. Goree:

Fluctuations of the charge on a dust grain in a plasma

. IEEE

Transactions on Plasma Science, 22:151–158, 1994

[7] Patrick Sadler, Diplomarbeit,

Partikelbildung in reaktiven Plasmen unter Verwendung

kohlenwasserstoffhaltiger bzw. siliziumorganischer Precursoren,

CAU

2010

[8] Kortshagen, U. und U. Bhandarkar:

Modeling of particulate coagulation in low

pressure plasmas

. Physical Review E, 60:887–898, 1999

[9] H. Ketelsen, Diplomarbeit,

Mie-Ellipsometrie an staubigen Plasmen,

CAU 2009

[10]

(34)

Erik v. Wahl Plasma Technology August 5th, 2014 34

(35)

langmuir probe measurements – power dependence

(36)

Erik v. Wahl Plasma Technology August 5th, 2014 36

Argon P = 10W

(37)

Die Selfbias-Spannung

Precursor wird „verbraucht“, Druck sinkt

(38)

Erik v. Wahl Plasma Technology August 5th, 2014 38

Die Selfbias-Spannung

aus [A. Keudell, Vorlesungsskript, 2012]

V

bias

ist empfindlicher Indikator für eine Beschichtung der

Wände mit einem Dielektrikum

References

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