IRF630, RF1S630SM. 9A, 200V, Ohm, N-Channel Power MOSFETs. Features. Ordering Information. Symbol. Packaging. Data Sheet January 2002

9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly developmental type TA17412.

Features

• 9A, 200V

• r _DS(ON) = 0.400 Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB JEDEC TO-263AB

Ordering Information

PART NUMBER PACKAGE BRAND

IRF630 TO-220AB IRF630

RF1S630SM TO-263AB RF1S630

NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in the tape and reel, i.e., RF1S630SM9A.

G

D

S

GATE

DRAIN (FLANGE)

SOURCE DRAIN

DRAIN (FLANGE) GATE

SOURCE

Data Sheet January 2002

Absolute Maximum Ratings T

= 25

C, Unless Otherwise Specified

IRF630, RF1S630SM UNITS Drain to Source Voltage (Note 1) . . . V

200 V Drain to Gate Voltage (R

= 20kΩ) (Note 1) . . . V

200 V Continuous Drain Current . . . I

T

= 100

C . . . I

9 6

A A Pulsed Drain Current (Note 3) . . . I

36 A Gate to Source Voltage . . . V

V Maximum Power Dissipation . . . P

75 W Linear Derating Factor . . . 0.6 W/

C Single Pulse Avalanche Energy Rating (Note 4) . . . E

150 mJ Operating and Storage Temperature . . . T

, T

-55 to 150

C Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s . . . T

Package Body for 10s, See Techbrief 334 . . . T

300 260

o

C

C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. T

= 25

C to 125

C.

Electrical Specifications T

= 25

C, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BV

I

= 250µA, V

= 0V (Figure 10) 200 - - V

Gate Threshold Voltage V

V

= V

, I

= 250µA 2 - 4 V

Zero Gate Voltage Drain Current I

V

= Rated BV

, V

= 0V - - 25

V

= 0.8 x Rated BV

, V

= 0V, T

= 125

C - - 250

On-State Drain Current (Note 2) I

V

> I

x r

, V

= 10V 9 - - A

Gate to Source Leakage Current I

V

= ±20V - -

nA

Drain to Source On Resistance (Note 2) r

I

= 5A, V

= 10V (Figure 8, 9) - 0.25 0.4

Forward Transconductance (Note 2) g

V

> I

x r

, I

= 5A (Figure 12) 3 4.8 - S Turn-On Delay Time t

V

= 90V, I

≈ 9A, R

= 9.1Ω, V

= 10V

R

= 9.6Ω

MOSFET Switching Times are Essentially Independent of Operating Temperature

- - 30 ns

Rise Time t

- - 50 ns

Turn-Off Delay Time t

- - 50 ns

Fall Time t

- - 40 ns

Total Gate Charge

(Gate to Source + Gate to Drain)

Q

V

= 10V, I

= 9A, V

= 0.8 x Rated BV

I

= 1.5mA (Figure 14)

Gate Charge is Essentially Independent of Operating Temperature

- 19 30 nC

Gate to Source Charge Q

- 10 - nC

Gate to Drain “Miller” Charge Q

- 9 - nC

Input Capacitance C

V

= 25V, V

= 0V, f = 1MHz (Figure 11) - 600 - pF

Output Capacitance C

- 250 - pF

Reverse Transfer Capacitance C

- 80 - pF

Internal Drain Inductance L

Measured From the

Contact Screw on Tab to Center of Die

Modified MOSFET Symbol Showing the Internal Devices Inductances

- 3.5 - nH

Measured From the Drain Lead, 6mm (0.25in) From Package to Center of Die

- 4.5 - nH

Internal Source Inductance L

Measured From the

Source Lead, 6mm (0.25in) From Header to Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case R

- - 1.67

C/W

Thermal Resistance Junction to Ambient R

Free Air Operation - - 80

C/W

L_S L_D

G

D

S

Source to Drain Diode Specifications

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current I

Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode

- - 9 A

Pulse Source to Drain Current (Note 3)

I

- - 36 A

Source to Drain Diode Voltage (Note 2) V

T

= 25

C, I

= 9A, V

= 0V (Figure 13) - - 2 V

Reverse Recovery Time t

T

= 150

C, I

= 9A, dI

/dt = 100A/µs - 450 - ns

Reverse Recovery Charge Q

T

= 150

C, I

= 9A, dI

/dt = 100A/µs - 3 -

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.

3. Repetitive rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. V

= 20V, starting T

= 25

C, L = 3.37mH, R

= 50Ω, peak I

= 9A.

Typical Performance Curves Unless Otherwise Specified

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE

FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE

FIGURE 3. NORMALIZED TRANSIENT THERMAL IMPEDANCE

D

S

0 50 100 150

0

T_C, CASE TEMPERATURE (^oC)

POWER DISSIPATION MULTIPLIER

0.2 0.4 0.6 0.8 1.0 1.2

4

2

0

25 50 75 100 125 150

8

ID, DRAIN CURRENT (A)

T_C, CASE TEMPERATURE (^oC) 10

6

t₁, RECTANGULAR PULSE DURATION (s)

10 ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE

10^-3 10^-2 10^-1 1

10^-5 10^-4

1.0

0.01 0.1

NOTES:

DUTY FACTOR: D = t₁/t₂ PEAK T_J = P_DM x Z_θJC R_θJC + T_C

P_DM

t₁ t₂ 0.1

0.02 0.2 0.5

0.01 0.05

SINGLE PULSE

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT

FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves Unless Otherwise Specified (Continued)

V_DS, DRAIN TO SOURCE VOLTAGE (V) 10

0.1 10

1 ID, DRAIN CURRENT (A) 100

100 DC 100µs 10µs

1ms

10ms 100ms 1

1000 LIMITED BY r_DS(ON)

AREA MAY BE OPERATION IN THIS

T_J = MAX RATED T_C = 25^oC

V_DS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A)

0

0 20 40 60 80

4 8 12 16 20

100 V_GS = 10V

V_GS = 8V

V_GS = 7V

V_GS = 6V

V_GS = 5V

V_GS = 4V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

0 2

0 1 2 3 5

4 6

ID, DRAIN CURRENT (A)

V_DS, DRAIN TO SOURCE VOLTAGE (V) 8

4 V_GS = 4V 10

V_GS = 5V V_GS = 6V V_GS = 10V

V_GS = 7V V_GS = 8V V_GS = 9V PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0 1 2 5 6 7

0 2 6

ID, DRAIN CURRENT (A)

V_GS, GATE TO SOURCE VOLTAGE (V) 10

4 8

25^oC 125^oC

-55^oC

4 3 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V_DS > I_D(ON) x r_DS(ON)MAX

0 0.4 0.6 0.8

10 20 30 40

rDS(ON), DRAIN TO SOURCE

I_D, DRAIN CURRENT (A) 0

0.2

V_GS = 10V

V_GS = 20V 2µs PULSE TEST

ON RESISTANCE NORMALIZED DRAIN TO SOURCE

2.2

1.4

1

0.6

0.2

-40 0 40

T_J, JUNCTION TEMPERATURE (^oC) 120 1.8

80

ON RESISTANCE

PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX V_GS = 10V, I_D = 5A

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE

FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves Unless Otherwise Specified (Continued)

1.05

0.95

0.85

0.75

-40 0 40

T_J, JUNCTION TEMPERATURE (^oC) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE

120 160

1.15

80 I_D = 250µA

2000

400

0 10 20

C, CAPACITANCE (pF)

1200

V_DS, DRAIN TO SOURCE VOLTAGE (V) 1600

800

C_ISS

C_OSS C_RSS

C_RSS = C_GD C_OSS = C_DS + C_GD

30 40 50

1

V_GS = 0V, f = 1MHz C_ISS = C_GS + C_GD, C_DS

I_D, DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S)

0

0 2 4 6 8

2 4 6 8 10

10 125^oC

25^oC 55^oC PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

0 1 2 3 4

1 10 100

ISD, SOURCE TO DRAIN CURRENT (A)

V_SD, SOURCE TO DRAIN VOLTAGE (V) 150^oC

25^oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX

Q_g, GATE CHARGE (nC) VGS, GATE TO SOURCE VOLTAGE (V)

0

0 8 16 24 32

5 10

15 20

40 I_D = 9A

V_DS = 40V

V_DS = 160V V_DS = 100V

20

IRF630, IRF632

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

V_GS

0.01Ω L

I_AS

+

-

V_DS

V_DD R_G

DUT VARY t_P TO OBTAIN

REQUIRED PEAK I_AS

0V

V_DD V_DS BV_DSS

t_P

I_AS

t_AV 0

V_GS

R_L

R_G

DUT +

-

V_DD

t_ON t_d(ON)

t_r 90%

10%

V_DS

90%

10%

t_f t_d(OFF)

t_OFF

90%

50%

50%

10% PULSE WIDTH

V_GS 0

0

0.3µF 12V

BATTERY 50kΩ

V_DS S

DUT D

G

I_g(REF) 0

(ISOLATED V_DS

0.2µF

CURRENT REGULATOR

I_D CURRENT SAMPLING I_G CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR SAME TYPE AS DUT

Q_g(TOT) Q_gd Q_gs

V_DS

0

V_GS V_DD

I_G(REF)

0

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As used herein:

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2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for product development. Specifications may change in any manner without notice.

This datasheet contains preliminary data, and supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

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First Production

Full Production

Not In Production

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