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A promising routine to fabricate GeSi nanowires via self assembly on miscut Si (001) substrates

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Academic year: 2020

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Figure

Figure 1 showed the surface morphology after 0.8 nmGe deposition on a Si (001) substrate with ~8° offdenoted by a black arrow in the figure
Figure 2 AFM image (0.5 × 0.5 μm2) of the surface morphology after. (a) 1.2 nm Ge at 560°C, (b) 1.5 nm Ge at 580°C, (c) 1.2 nm Ge at600°C (phase image), on vicinal Si (001) substrates with ~8° off toward 〈110〉, (d) height of nanowires vs growth temperature
Figure 4 AFM image (1 × 110th layer of Ge growth on a vicinal Si (001) substrate with ~8°off toward μm2) of the surface morphology after 〈110〉

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