TN1132 Technical note

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September 2013 DocID025225 Rev 1 1/41

Technical note

54ACT191 radiation report

Introduction

This technical note provides details of the total ionizing dose (TID) and the single event effects (SEE) that cover the QML-V-RHA qualification of the 54ACT191 device. It includes:

• TID results up to 300 krad (Si)

• SEE results:

– showing single event latchup (SEL) immunity up to 120 MeV-cm²/mg effective linear energy transfer (effective LET).

– including single event transient (SET) and single event upset (SEU) characterizations.

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1 Total ionizing dose (TID) . . . 6

2 Single event effects (SEE) . . . 7

2.1 Test strategy . . . 7

2.2 Test conditions . . . 7

2.2.1 Reference documents . . . 7

2.2.2 Facilities . . . 7

2.2.3 Device information . . . 8

2.3 Test results . . . .11

2.3.1 SEL . . . 11

2.3.2 SET . . . 11

2.3.3 SEU . . . 15

3 Glossary of terms . . . 17

Appendix A General test setup (UCL). . . 19

Appendix B SEL test method (UCL) . . . 20

Appendix C SEL test principle (UCL) . . . 20

Appendix D SET test method (UCL) . . . 21

Appendix E SET test principle (UCL) . . . 21

Appendix F SET block diagram (TAMU) . . . 22

Appendix G SEU test method (TAMU). . . 23

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device . . . 24

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device . . . 24

Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device . . . 25

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Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device . . . 26

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device . . . 27

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device . . . 28

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device . . . 29

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device . . . 30

Appendix P SET test results for the 54AC164245 (UCL). . . 31

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device . . . 33

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device . . . 37

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device . . . 39

Revision history . . . 40

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List of tables

Table 1. TID test parameters and conditions . . . 6

Table 2. TID results . . . 6

Table 3. Facilities . . . 7

Table 4. Ions used in TAMU . . . 7

Table 5. Ions used in UCL (cocktail number 1). . . 8

Table 6. Ions used in UCL (cocktail number 2). . . 8

Table 7. 54AC14. . . 8

Table 8. 54AC174. . . 9

Table 9. 54AC244. . . 9

Table 10. 54AC374. . . 10

Table 11. 54AC164245 . . . 10

Table 12. SEL results for four ACMOS devices tested with two heavy ions. . . 11

Table 13. SET results for four ACMOS devices tested with four heavy ions . . . 12

Table 14. Worst SET for the 54AC244 device, S/N = 1 . . . 14

Table 17. SEU results for two ACMOS devices tested with four heavy ions . . . 15

Table 18. Worst SEU for the 54AC174 device, S/N = 5 . . . 16

Table 19. Worst SEU for the 54AC374 device, S/N = 2 . . . 16

Table 20. Test apparatus . . . 19

Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device . . . 24

Table 26. Summary of SET runs 1 to 15 for the 54AC14 device . . . 28

Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device . . . 37

Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device . . . 39

Table 32. Document revision history . . . 40

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List of figures

Figure 1. 54AC14. . . 8

Figure 2. 54AC174. . . 9

Figure 3. 54AC244. . . 9

Figure 4. 54AC374. . . 10

Figure 5. 54AC164245 . . . 10

Figure 6. SET Weibull cross section for the 54AC244 device . . . 12

Figure 9. SEU Weibull cross section for the 54AC174 device . . . 15

Figure 10. SEU Weibull cross section for the 54AC374 device . . . 16

Figure 11. Test setup . . . 19

Figure 12. Common SEL characteristic . . . 20

Figure 13. Shape of OUT* and OUT/ signals. . . 21

Figure 14. SET block diagram (TAMU) . . . 22

Figure 15. Worst case on run 58, ₁₃₂Xe²⁶, tilt @ 0°. . . 31

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1 Total ionizing dose (TID)

TID test parameters, conditions, and results for the 54ACT191 device are presented below.

54ACT191 is a rad-hard 4-bit synchronous binary up/down counter. It was qualified up to 300 krad (Si).

Table 1. TID test parameters and conditions

Test parameter Test condition

Test method MIL-STD-883 TM1019

Applied spec SMD 5962-04228

Test facility CEA, Saclay, France

Total dose 300 krad

Dose rate 60 rad(Si)/s

Bias voltage 5.5 V

Bias conditions Inputs at high level

Limits

Before irradiation I_CC≤4 μA I_CCT≤1.6 μA After room temperature

annealing

I_CC≤50 μA I_CCT≤1.6 μA

Table 2. TID results

S/N

Test results at 0 krad

Test results at 300 krad

After room temperature

annealing Functional

test passed?

I_CC value

(μA)

I_CCT value

(mA)

Functional test passed?

I_CC value

(μA)

I_CCT value

(mA)

Functional test passed?

I_CC value

(μA)

I_CCT value

(mA) 1

Yes

0.101

0.400

Yes

262.0 0.430

Yes

34.1 0.300

2 0.117 287.0

0.440

43.8 0.310

3 0.115 283.0 40.7

0.300

4 0.088

0.410 275.0 24.4

Ref⁽¹⁾ 0.076 0.077 0.410 0.077 0.410

1. Ref = reference part

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2 Single event effects (SEE)

2.1 Test strategy

The ACMOS logic series was characterized under heavy ions through five test vehicles:

54AC14, 54AC174, 54AC244, 54AC374, and 54AC164245. These test vehicles were chosen because they are representative of the technology.

2.2 Test conditions

2.2.1 Reference documents

Please refer to the following Online test procedures:

• JESD57

• ASTM F 1192

2.2.2 Facilities

The devices were tested at two facilities (see Table 3).

Table 4, Table 5, and Table 6 show the heavy ions used in each facility and their respective energy, range and linear energy transfer (LET).

Table 3. Facilities Texas A&M cyclotron facility (TAMU),

Texas, USA

Universite Catholique de Louvain (UCL), Louvain-La-Neuve, Belgium Devices

tested 54AC14, 54AC174 54AC244, 54AC374, 54AC164245

Table 4. Ions used in TAMU

Ions Energy (MeV) Range (μm(si)) LET (MeV-cm²/mg)

40 Ar ¹⁸ 599 220 7.7

84 Kr ³⁶ 1259 149 25.4

129 Xe ⁵⁴ 1934 124 47.3

165 Ho ⁶⁷ 2474 112 64.3

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For further information, please refer to Appendix A, Appendix B, Appendix C, Appendix D, Appendix E, Appendix F, and Appendix G. Data are presented by facility and then by “event effects”.

2.2.3 Device information

Figure 1. 54AC14

Table 5. Ions used in UCL (cocktail number 1⁽¹⁾)

1. See Appendix B: SEL test method (UCL)

132 Xe ²⁶ 459 43 55.9

Table 6. Ions used in UCL (cocktail number 2⁽¹⁾)

1. See Appendix D: SET test method (UCL)

58 Ni ¹⁸ 567 98 20.6

83 Kr ²⁵ 756 92 32.4

Table 7. 54AC14 Standard

microcircuit drawing

(SMD)

Function Samples used Date code Date test Wafer fab

5962-87624

Rad-hard hex Schmitt

inverter

5 for SEL

5 for SET 0605A 20-Jul-2007 Agrate

Die marking Die layout Flat package 14

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Figure 2. 54AC174

Figure 3. 54AC244 Table 8. 54AC174 Standard

(SMD)

5962-87626

Rad-hard hex D-type flip

flop with clear

5 for SEL

5 for SEU 0432A 20-Jul-2007 Agrate

(SMD)

5962-87552

Rad-hard octal bus buffer

line driver 3- state

1 for SEL

1 for SET N/A 03-Nov-2008 Agrate,

Carrollton

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Figure 4. 54AC374

Figure 5. 54AC164245 Table 10. 54AC374 Standard

(SMD)

5962-87694

Rad-hard octal D-type flip flop 3-state

2 for SET

2 for SEU N/A 03-Nov-2008 Agrate,

Carrollton

(SMD)

5962-98580

Rad-hard 16-bit transceivor 3.3 V to 5.5 V

bidirectional level shifter

4 for SEL

4 for SET N/A 26-Apr-2010 Ang Mo Kio

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2.3 Test results

2.3.1 SEL

Table 12 presents the SEL results for four ACMOS devices (54AC14, 54AC174, 54AC244, and 54AC164245) tested with two heavy ions (Ho and Xe).

No SEL was detected for any of the devices. These devices were SEL immune up to 120 MeV-cm²/mg. For further details, refer to Appendix H, Appendix I, Appendix J, Appendix K, and Appendix L.

2.3.2 SET

Table 13 presents the SET results for four ACMOS devices (54AC14, 54AC244, 54AC374, and 54AC164245) tested with four heavy ions (Ar, Kr, Xe, and Ni). The threshold voltage was ±50 mV and the sampling rate was 1 G/s. Some SET test results were recorded despite being very short (approximately 100 ns).

Table 12. SEL results for four ACMOS devices tested with two heavy ions

Device 54AC14 54AC174 54AC244 54AC164245

Ion Ho Xe

Fluence

(ions/cm²) ≤1 x 10⁷ ≤ 1 x 10⁶

LET max.

(MeV-cm²/mg) 71 56 68

Effective LET max.

(MeV-cm²/mg) 120 112 110

Temperature

(°C) 125

Supply voltage V_CC = V_CC max = 6 V

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No SET was detected for the 54AC14 device.

Figure 6, Figure 7, and Figure 8 below show the SET cross section curves for the 54AC244, 54AC374, and 54AC164245 devices. The curves below were parametrized using the Weibull fit. The worst amplitude was 150 mV.

Figure 6. SET Weibull cross section for the 54AC244 device Table 13. SET results for four ACMOS devices tested with four heavy ions

Device 54AC14 54AC244 54AC374 54AC164245

Ion Ar, Kr Xe Xe, Kr, Ar Xe, Kr, Ni

Fluence

(ions/cm²) ≤ 1 x 10⁸ ≤ 1 x 10⁷

LET max.

(MeV-cm²/mg) 41 56 68

(MeV-cm²/mg) 83 112 110

Saturated cross

section - 7.00E-07 7.30E-05

Threshold LET - 55.9 21.3

Temperature

(°C) 25

Supply voltage V_CC = V_CC max = 2 to 5.5 V

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DocID025225 Rev 1 13/41 Figure 7. SET Weibull cross section for the 54AC374 device

Figure 8. SET Weibull cross section for the 54AC164245 device

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Table 14, Table 15, and Table 16 below present the worst SET for the 54AC244, 54AC374, and 54AC164245 devices.

For further information, please refer to Appendix M, Appendix N, Appendix O, Appendix P, and Appendix Q.

Table 14. Worst SET for the 54AC244 device, S/N = 1

Run Ion LET

(MeV-cm²/mg)

Effective LET (MeV-cm²/mg)

Fluence (ions/cm²)

Number of events

Cross

section W S

2 Xe 55.9 111.8 1.00E+07 7 7.00E-07

55 4

5 3 3.00E-07

Run Ion LET

(MeV-cm²/mg)

Number of events

Cross

section W S

2 Xe 55.9 111.8 1.00E+07 7 7.00E-07

55 4

3 3 3.00E-07

Run Ion LET

(MeV-cm²/mg)

Cross

section W S

25 Xe 67.7 109.96

1.00E+06

73 7.30E-05

63 5

54 67.7 41 4.10E-05

73 Kr 31 31 12 1.20E-05

83 Ni 21.3 21.3 1 1.00E-06

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2.3.3 SEU

Table 17 presents the SEU results for two ACMOS devices (54AC174 and 54AC374) tested with four heavy ions (Ho, Xe, Kr, and Ar).

Figure 9, and Figure 10 below show the SEU Weibull cross section curves for the 54AC174 and 54AC374 devices.

Figure 9. SEU Weibull cross section for the 54AC174 device Table 17. SEU results for two ACMOS devices tested with four heavy ions

Device 54AC174 54AC374

Ion Xe, Kr, Ar, Ho Xe, Kr, Ar

Fluence

(ions/cm²) ≤ 1 x 10⁸ ≤ 1 x 10⁷

LET max.

(MeV-cm²/mg) 71 56

(MeV-cm²/mg) 120 112

Saturated cross section 8.70E-07 2.94E-06

Threshold LET 8.5 10.1

Temperature

(°C) 25

Supply voltage V_CC = V_CC max = 2

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Figure 10. SEU Weibull cross section for the 54AC374 device

Table 18 and Table 19 present the worst SEU for the 54AC174 and 54AC374 devices.

Table 18. Worst SEU for the 54AC174 device, S/N = 5

Run Ion LET

(MeV-cm²/mg)

Number of events

Cross

section W S

81

Ho 70.2

102.5 9.99E+06 139 8.70E-07

65 6

83 99.8

1.00E+07 136 8.50E-07

82 70.2 79 4.94E-07

102

Ar 8.5

33.3 2.69E+07 41 8.66E-08

103 28.5 1.94E+07 21 6.77E-08

104 25.8 5.66E+07 3 3.31E-09

101 24.9 1.02E+08 1 6.13E-10

100 21.0 1.09E+08 2 1.15E-09

Table 19. Worst SEU for the 54AC374 device, S/N = 2

Run Ion LET

(MeV-cm²/mg)

Cross

section W S

2 Xe 55.9 111.8 1.00E+07 235 2.94E-06

60 3

1 55.9 5.67E+06 50 1.10E-06

4 Kr 32.4 32.4

1.00E+07 56 7.00E-07

7 Ar 10.1 20.2 7 8.75E-08

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3 Glossary of terms

Cross section: The number of events per unit fluence, expressed in units of cm²/device or cm²/bit. In the event of the device being tilted at an angle θ, the fluence must be corrected by multiplying it by cosine θ.

DUT: Device under test

Effective LET: The equivalent LET obtained by tilting the device under test with respect to the axis beam, hence increasing the path length of the ion and the total energy deposited.

Effective LET = Incident LET x 1/cosine θ where θ is the tilt angle of the device. Effective LET may also be used in referring to the actual LET in a sensitive volume after taking into account the energy loss in “dead layers” such as metalization and passivation.

Energy: The energy imparted to the ion by the accelerator. This may be in units of total energy (MeV) or energy per nucleon (MeV/n).

Fluence: The total amount of particle radiant energy incident on a surface in a given period of time, divided by the area of the dimensions (in cm²/bit). Fluence also includes the flux integrated over time. Units are ions/cm².

Flux: The number of ions passing through a unit area perpendicular to the beam in one second, expressed in ions/cm²/s.

Ion species: Type of ion being used for irradiation (e.g. oxygen, neon)

Level of interest: A cross section, energy, LET, or fluence having some particular significance for a program or project.

Linear energy transfer (LET): The amount of energy deposited per unit length along the path of the incident ion. It is expressed in units of MeV-cm²/mg which is the energy per unit length divided by the density of the irradiated medium.

Range: The distance traveled, without straggling, in the target material by the specified ion of a given charge state and energy.

Saturated cross section - also known as asymptotic cross section: The cross section for which an increase in LET does not result in an increased number of events.

Serial number (S/N): Unique code and consecutive number assigned to all devices Single event burnout (SEB): Triggering of the parasitic bipolar structure in a power transistor, accompanied by regenerative feedback, avalanche, and high current condition. A SEB is potentially destructive unless suitably protected.

Single event effect (SEE): Any measurable or observable change in the state or performance of a microelectronic device, component, subsystem, or system (digital or analog) resulting from a single energetic particle strike.

Single event functional interrupt (SEFI): A soft error that causes the component to reset, lock-up, or otherwise malfunction. SEFIs typically occur in complex devices with built-in state/control sections like modern memories (SDRAM, DRAM, NOR-and NAND-Flash) and all types of processors, FPGA, or ASICS. Two main types of SEFIs are distinguished depending on the action required to restore functionality: reset by software or by power cycling. The stored data may or may not be lost.

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Single event gate rapture or dielectric rupture (SEGR): Destructive rupture of a gate oxide or any dielectric layer by a single ion strike. This leads to gate leakage currents under bias and can be observed in power MOSFETs, linear integrated circuits (with internal capacitors), or as stuck bits in digital devices.

Single event latchup (SEL): A permanent and potentially destructive state of the device under test whereby a parasitic thyristor structure is triggered by an ion strike and creates a low impedance, high current path.

Single event transient (SET): A temporary voltage excursion (voltage spike) at a node in a logic or linear integrated circuit caused by a single energetic particle strike.

Single event upset (SEU) - also known as a soft error: The change of state of a latched logic cell from one to zero or vice-versa. A single event upset is non-destructive and the logic element can be rewritten or reset.

Threshold LET: The lowest LET at which a SEE occurs.

Weibull fit: F(x) = A (1-exp{-[(x-x₀)/W]^s}), with X = effective LET in MeV-cm²/mg

F(x) = the SEE cross section in cm² A = limiting or plateau cross section

x₀ = onset parameter, such that F(x) = 0 for x < x₀ W = width parameter

s = a dimensionless exponential

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DocID025225 Rev 1 19/41

Appendix A General test setup (UCL)

The test board required the following apparatus (Table 20) and setup (Figure 11) to operate properly.

Figure 11. Test setup Table 20. Test apparatus

Equipment Function Test conditions

MI-03 Power supply V_DD1 and V_DD2

ME-44, ME-48 Oscilloscope -

ME-53 Guard system V_DD1: Gamme 3, Ith = 80 mA

V_DD2: Gamme 3, Ith = 80 mA

1

2 CLK1

R1 50

VCC_INV C9

100 nF SQR_IN

CLK1 2

U2

3

4 CLK1

NC7SZ04

100 nF C10

VDD1 VDD2

C11 100 nF

5

7 18 31 42

U1

GND VCC VCC1 VCC2 VCC3 VCC4

CLK1CLK1 B1B2 B3B4 B5 B6 B1B2 B3B4 B5B6 OUT OUT

A1A2 A3A4 A5A6 A7 A8 A1A2 A3A4 A5 A6A7 A8

54ACS164245 1

2 35 6 89 11 12 1314 1617 1920 2223

24 25

26 2729 3032 3335 36 37 38 4041 43 4446 47 1-DIR 48

1-B11-B2 1-B3 1-B41-B5 1-B6 1-B71-B8

2-B1 2-B3 2-B42-B5 2-B62-B7 2-B8 2-B2

2-DIR 1-G 1-A11-A2 1-A3 1-A41-A5 1-A6 1-A71-A8

2-A1 2-A3 2-A42-A5 2-A62-A7 2-A8 2-A2

GND 2-G

GAMS2501131615CB 100 nF

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Appendix B SEL test method (UCL)

For SEL test detection, runs up to a fluence of 1.10⁷ions/cm² for SEL monitoring only were performed. This configuration allowed the latchup sensitivity of the device to be verified with cocktail number 1 (see Table 5: Ions used in UCL (cocktail number 1)). The test stopped when the maximum fluence was reached or when a hundred events were detected.

Appendix C SEL test principle (UCL)

A power supply was applied to the device under test (DUT) through the guard system. To obtain 6 V on the DUT, a voltage of 6.3 V was applied. The threshold current of the guard system was set to 80 mA. When an event occurred, the guard system sent a trigger command to the oscilloscope. The power supply was held ‘on’ for 1 ms and cut ‘off’ for 7 ms.

It was then restarted with nominal current consumption.

At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.

Event description

During the test, the guard system controlled the device’s current. If the value exceeded 80 mA, the delatcher was triggered and the event was counted as a SEL.Figure 12 shows a common SEL characteristic.

Figure 12. Common SEL characteristic

1. Legend: Tm = hold time for 1 ms; Tc = cut off time for 7 ms

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Appendix D SET test method (UCL)

For SET test detection, runs up to a fluence of 1x10⁶ ions/cm² were performed. Latchup monitoring was also performed during these tests. This configuration allowed the SET and the SEL sensitivity of the device to be verified with cocktail number 2 (see Table 6: Ions used in UCL (cocktail number 2)). The test stopped when the maximum fluence was reached or when four hundred events were detected.

Appendix E SET test principle (UCL)

The guard system was used on the power supply of the component to detect SEL and to prevent the destruction of the DUT. An oscilloscope was connected to OUT*(DUT pin 22) and OUT/(DUT pin 23) to perform the SET test. This oscilloscope was configured to monitor pulse width on the output signals. The shape of the OUT* and OUT/ signals are shown in Figure 13.

Figure 13. Shape of OUT* and OUT/ signals

Pulse width modifications of both signals were detected. When such a modification occurred, it was due to SET. The oscilloscope internal counter was then incremented and the trace was stored.

At the end of each run, the test program read the “local scope counter” of the oscilloscope which represented the total event count. The recorded current waveforms were downloaded and stored.

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Appendix F SET block diagram (TAMU)

The DUT was irradiated to a maximum total ion fluence of 1x108 ion/cm². During the course of the test, five different serial numbers of the DUT (101, 102, 103, 104, 105) were irradiated with a minimum effective LET of 33.3 MeV-cm²/mg and a maximum effective LET of 82.9 MeV-cm²/mg. Except for the test where serial number 101 was irradiated to 1E8 ions/cm², the tests used a maximum fluence of 1E7 ions/cm². At TAMU, the lids were removed from the DUT to give full exposure to the top surface of the die using the 15 MeV/n beam.

The output was monitored with both a data acquisition system to allow transients from all six outputs (1Y, 2Y, 3Y, 4Y, 5Y and 6Y) to be captured, and a pair of high-resolution

oscilloscopes to capture detailed images of the transient behavior on a sub-set of the transients. Output 1Y was monitored with the oscilloscope to capture both positive and negative going transients. The actual trigger setting was recorded in the run logs. The data acquisition system and the oscilloscopes were located in the control room while the power supplies, meters, and switch matrix were located in the exposure room. The outputs were brought to the control room using shielded SMA and BNC cables.

Figure 14. SET block diagram (TAMU)

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Appendix G SEU test method (TAMU)

The devices under test were irradiated to a maximum total ion fluence of 1x108 ions/cm² at a maximum effective LET of 120 MeV-cm²/mg using the worst-case voltage (3 V) and temperature (25 °C). The lids were removed from the devices prior to testing to give full exposure to the top surface of the die.

To achieve an effective linear energy transfer (LET) of 120 MeV-cm²/mg the devices were irradiated with Ho at an angle of approximately 54 degrees. The effective LET is the normal LET divided by the cosine of the angle of irradiation. The use of effective LET is accepted in test standards. The Ho range to the Bragg peak using a 15 MeV/n beam is 112 μm.

A variety of LETs and angles were used to obtain LET values from 8.5 to 120 MeV-cm²/mg.

Prior to and immediately following the heavy ion exposure, the devices underwent a “health check”. This test verified that the device met the datasheet specifications and did not suffer any degradation that would confound the SEU data.

The test platform also monitored for clear errors (all bits were set to “0”) and clock errors (all bits switched states simultaneously). Note that the inputs were held in the opposite state from the outputs so that if a clock transient occurred, all bits would flip simultaneously.

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of SEL runs 70 to 75 for the 54AC14 device

1DocID025225 Rev 1

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device

Table 21. Summary of SEL runs 70 to 75 for the 54AC14 device Run S/N V_CC

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Effective range

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

No. of events 70 103

6 125 Ho 2474 112 70.80 54 66 120.50

5.24E+04 325

1.00E+07

0

71 104 5.17E+04 329

72 105 4.96E+04 173 5.05E+06

73 105 5.15E+04 166 5.04E+06

74 106 4.95E+04 344 1.00E+07

75 107 4.71E+04 361 9.99E+06

(V) T

(° C) Ion Energy (MeV)

Range

(μm) LET

(MeV-cm²/mg) Tilt

(° ) Effective range

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

No. of events 76 1

5.5 125 Ho 2474 112 70.80 54 66 120.50

4.61E+04 369

9.99E+06

0

77 2 4.58E+04 372

78 3 4.66E+04 365 1.00E+07

79 4 4.56E+07

373 9.99E+06

80 5 4.56E+04 1.00E+07

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2Summary of SEL runs 1 to 6 for the 54AC244 device

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Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

No. of events 1

1 6 125 Xe 459 43 55.90

60 22 111.80 7.88E+03 1271

1.00E+07 0

2 1.06E+04 945

3 0 43 55.90 1.76E+04 564

4 1.80E+04 556

5 60 22 111.80 9.04E+03 1108

6 8.74E+03 1147

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of SEL runs 1 to 7 for the 54AC374 device

1DocID025225 Rev 1

Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

No. of events

1 1

6 125

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+06

0 2

2 1

60 22 111.80

5.35E+03 1871

1.00E+07 2

3 1

9.79E+03 1022 2

4 1

Kr 756 92 32.40 0 92 32.40

1.36E+04 739 2

5 1

1.24E+04 809 2

6 1

Ar 372 119 10.10 60 60 20.20

9.47E+03 1057 2

7 1

9.12E+03 1098 2

(27)

2Summary of SEL runs 1 to 8 for the 54AC164245 device

DocID025225 Rev 127/41

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device

Table 25. Summary of SEL runs 1 to 8 for the 54AC164245 device Run S/N V_CC1

(V)

V_CC2 (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

V_CC1 no. of events

V_CC2 no. of events

1 1

6 6 125 Xe 459 43 67.70

0 43 67.70

1.53E+04 655

1.00E+07 0 0

2 2 1.52E+04 659

3 3 1.42E+04 706

4 4 1.39E+04 720

5

52 27 109.96

9.17E+03 1090

6 3 9.88E+03 1012

7 2 8.97E+03 1115

8 1 9.87E+03 1013

(28)

of SET runs 1 to 15 for the 54AC14 device

1DocID025225 Rev 1

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device

Table 26. Summary of SET runs 1 to 15 for the 54AC14 device Run S/N V_CC

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

Cross section/

device 1

101 5

25

Ar 599 220

16.60

60

110

33.30

N/A N/A

9.98E+06

0 -

2 3

18.50 37.20

1.43E+08

4 3.3 1.01E+08

5 9.95E+07

6

2

1.00E+08 7

8 102

Kr 1259 149 41.30 74 82.91

9 1.12E+05 1792

10 103

N/A N/A

1.01E+07

11 1.00E+07

12 104 9.94E+06

13 1.00E+07

14 105

15 9.89E+06

(29)

2Summary of SET runs 1 to 6 for the 54AC244 device

DocID025225 Rev 129/41

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device 1

1 2 25 Xe 459 43 55.90

60 22 111.80 7.88E+03 1271

1.00E+07

0 -

2 1.06E+04 945 7 7.00E-07

3 0 43 55.90 1.76E+04 564

0 -

4 1.80E+04 556

5 60 22 111.80 9.04E+03 1108 3 3.00E-07

6 8.74E+03 1147 0 -

(30)

1DocID025225 Rev 1

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

1 1

2 25

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+06 0 -

2

2 1

60 22 111.80

5.35E+03 1871

1.00E+07

3 3.00E-07

2 7 7.00E-07

3 1

9.79E+03 1022 4 4.00E-07

2 3 3.00E-07

4 1

Kr 756 92 32.40 0 92 32.40

1.36E+04 739

0 -

2

5 1

1.24E+04 809 2

6 1

Ar 372 119 10.10 60 60 20.20

9.47E+03 1057 2

7 1

9.12E+03 1098 2

(31)

DocID025225 Rev 1 31/41

Appendix P SET test results for the 54AC164245 (UCL)

During irradiation, the SET results in Figure 15, Figure 16, Figure 17, and Figure 18 were observed.

Figure 15. Worst case on run 58, ₁₃₂Xe²⁶, tilt @ 0°

(32)

(33)

DocID025225 Rev 133/41

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device

Table 29. Summary of SET runs 9 to 85 for the 54AC164245 device Run S/N V_CC1

(V)

V_CC2 (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device 9

1

5.5 5.5

25 Xe 459 43 67.70 52 27 109.96

1.02E+04 98

1.00E+06

0 -

10 9.80E+03 102

11 5 3 9.17E+03 109

12 9.26E+03 108

2 2.00E-06 13

3

5 9.17E+03 109

14 9.35E+03 107

15 3 9.09E+03 110 5 5.00E-06

16 9.26E+03 108 13 1.30E-05

17

2

5.5 5.5 9.09E+03 110 1 1.00E-06

18 8.93E+03 112

0 -

19 5 3 9.35E+03 107

20 9.09E+03 110 3 3.00E-06

21 3 5 1.03E+04 97

4 4.00E-06

22 9.17E+03 109

23 Canceled without irradiation

24

2 3 3

25 Xe 459 43 67.70 52 27 109.96

8.85E+03 113

1.00E+06

18 1.80E-05

25 9.62E+03 104 73 7.30E-05

26 1.05E+04 95 61 6.10E-05

27 3 5.5 5.5 8.77E+03 114 0 -

28

(34)

1DocID025225 Rev 1

29

3

5 3

25 Xe 459 43 67.70

52 27 109.96

9.09E+03 110

1.00E+06

0 -

30 9.52E+03 105 2 2.00E-06

31

3

5 1.00E+04 100 4 4.00E-06

32 1.06E+04 94 3 3.00E-06

33 3 1.01E+04 99 8 8.00E-06

34 9.26E+03 108 57 5.70E-05

35

4

5.5 5.5 1.01E+04 99 1 1.00E-06

36 1.05E+04 95 0 -

37 5 3 1.00E+04 100 3 3.00E-06

38 1.06E+04 94 2 2.00E-06

39

3

5 1.04E+04 96

3 3.00E-06

40 9.71E+03 103

41

3

1.05E+04 95 7 7.00E-06

42 9.52E+03 105 18 1.80E-05

43 9.62E+03 104 16 1.60E-05

44

1

5 3

0 43 67.70

1.49E+04 67

0 -

45

3

5 1.45E+04 69

46 1.39E+04 72

1 1.00E-06

47 3 1.41E+04 71

Run S/N V_CC1 (V)

V_CC2 (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

(35)

DocID025225 Rev 135/41

51

2 3

5

25

Xe 459 43 67.70

0

43 67.70

1.45E+04 69

1.00E+06

0 -

52 1.56E+04 64 1 1.00E-06

53

3

1.37E+04 73 5 5.00E-06

54 1.39E+04 72 41 4.10E-05

55

3

5 1.33E+04 75

0 -

56

3

5 1.43E+04 70

57 1.49E+04 67 2 2.00E-06

58

3

4 4.00E-06

59 1.52E+04 66 22 2.20E-05

60

4

5.5 1.45E+04 69 0 -

61 5 1 1.00E-06

62 1.49E+04 67

0 -

63

3

5 1.47E+04 68

64

1.49E+04 67

2 2.00E-06

65 3 5 5.00E-06

66 7 7.00E-06

67 1

5

Kr 756 92 31.00 92 31.00

1.47E+04 68 0 -

68

69 3 1.45E+04 69 1 1.00E-06

70 2

5 1.28E+04 78

0 -

71 3 5 1.00E+04 100

72 3 1.45E+04 69 1 1.00E-06

Run S/N V_CC1 (V)

V_CC2 (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

(36)

1DocID025225 Rev 1

73 2

3 3

25

Kr 756 92 31.00

0

92 31.00

1.43E+04 70

1.00E+06

12 1.20E-05 74

3

5 1.54E+04 65

0 -

75

3

1.52E+04 66

76 1.49E+04 67 2 2.00E-06

77

4

5 1.56E+04 64

0 -

78

3

5 1.47E+04 68

79

3

1.49E+04 67 1 1.00E-06

80 1.43E+04 70

0 -

81 1

Ni 567 98 21.30 98 21.30

1.49E+04 67

82 2 1.45E+04 69

83 1.11E+04 90 1 1.00E-06

84 3 1.19E+04 84

0 -

85 4 1.45E+04 69

Run S/N V_CC1 (V)

V_CC2 (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

(37)

2Summary of SEU runs 81 to 106 for the 54AC174 device

DocID025225 Rev 137/41

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device

Table 30. Summary of SEU runs 81 to 106 for the 54AC174 device Run S/N V_CC

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

bit 81

5

3 25

Ho 2474 112 70.20

54 66 120.50 4.93E+04 345 9.99E+06 139 1.39E-05 8.70E-07

82 0 112 70.20 4.79E+04 209

1.00E+07 79 7.90E-06 4.94E-07

83 45 79 99.80 4.57E+04 310 136 1.36E-05 8.50E-07

84 1 4.86E+04 290 9.99E+06 112 1.12E-05 7.01E-07

85 2 0 112 70.20 5.33E+04 188

1.00E+07

79 7.90E-06 4.94E-07

86 3 54 66 120.50 5.25E+04 324 139 1.39E-05 8.69E-07

87

4 34 93 84.90 5.54E+04 218 99 9.90E-06 6.19E-07

88

Xe 1934 124 52.50

103 63.50 9.97E+04 121 76 7.60E-06 4.75E-07

89 0 124 52.50 9.50E+04 105 52 5.20E-06 3.25E-07

90 1 20 117 55.90 8.94E+04 119 9.97E+06 69 6.92E-06 4.33E-07

91 0 124 52.50 8.35E+04 120

1.00E+07

59 5.90E-06 3.69E-07 92 2

Kr 1259 149 28.50

154 28.50 8.39E+04 119 35 3.50E-06 2.19E-07

93 34 124 34.40 8.82E+04 137 29 2.90E-06 1.81E-07

94 3

1.11E+05 224 2.06E+07 73 3.54E-06 2.21E-07

95 54 88 49.00 9.85E+04 344 1.99E+07 99 4.97E-06 3.11E-07

96 45 105 40.50 9.13E+04 309 2.00E+07 80 4.00E-06 2.50E-07

97

4 Ar 599 220 8.50

0 220 8.50 1.36E+04 163 1.00E+08 0 - -

98 54 129 14.60 6.09E+05 282 1.01E+08 3 2.97E-08 1.86E-09

99 60 110 17.20 5.99E+05 340 1.02E+08

2 1.96E-08 1.23E-09

100 5 54 129 21.00 5.38E+05 345 1.09E+08 1.83E-08 1.15E-09

(38)

of SEU runs 81 to 106 for the 54AC174 device

1DocID025225 Rev 1

101

5

3 25 Ar 599 220 8.50 54 129

24.90 4.99E+05 346 1.02E+08 1 9.80E-09 6.13E-10

102 33.30 4.52E+05 111 2.96E+07 41 1.39E-06 8.66E-08

103 28.50 4.70E+05 70 1.94E+07 21 1.08E-06 6.77E-08

104 25.80 4.99E+05 193 5.66E+07 3 5.30E-08 3.31E-09

105 2 4.98E+05 145 4.25E+07 4 9.41E-08 5.88E-09

106 27.10 5.01E+05 99 2.92E+07 12 4.11E-07 2.57E-08

Run S/N V_CC (V)

T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

bit

(39)

2Summary of SEU runs 1 to 7 for the 54AC374 device

DocID025225 Rev 139/41

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device

Table 31. Summary of SEU runs 1 to 7 for the 54AC374 device Run S/N V_CC

(V) T

(° C) Ion Energy (MeV)

Range (μm)

LET (MeV-cm²/mg)

Tilt (° )

Flux (#/cm².s)

Time (s)

Fluence (#/cm²)

device

bit

1 1

2 25

Xe 459 43 55.90

0 43 55.90 1.04E+04 547 5.67E+06 53 9.35E-06 1.17E-06

2 50 8.82E-06 1.10E-06

2 1

60 22 111.80

5.35E+03 1871

1.00E+07

226 2.26E-05 2.83E-06

2 235 2.35E-05 2.94E-06

3 1

9.79E+03 1022 215 2.15E-05 2.69E-06

2 211 2.11E-05 2.64E-06

4 1

Kr 756 92 32.40 0 92 32.40

1.36E+04 739 55 5.50E-06 6.88E-07

2 56 5.60E-06 7.00E-07

5 1

1.24E+04 809 42 4.20E-06 5.25E-07

2 39 3.90E-06 4.88E-07

6 1

Ar 372 119 10.10 60 60 20.20

9.47E+03 1057 2 2.00E-07 2.50E-08 2

7 1

9.12E+03 1098 12 1.20E-06 1.50E-07

2 7 7.00E-07 8.75E-08

(40)

Revision history

Table 32. Document revision history

Date Revision Changes

10-Sep-2013 1 Initial release

(41)

DocID025225 Rev 1 41/41

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TN1132 Technical note

Technical note

54ACT191 radiation report

Introduction

Contents

1 Total ionizing dose (TID) . . . 6

2 Single event effects (SEE) . . . 7

3 Glossary of terms . . . 17

Appendix A General test setup (UCL). . . 19

Appendix B SEL test method (UCL) . . . 20

Appendix C SEL test principle (UCL) . . . 20

Appendix D SET test method (UCL) . . . 21

Appendix E SET test principle (UCL) . . . 21

Appendix F SET block diagram (TAMU) . . . 22

Appendix G SEU test method (TAMU). . . 23

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device . . . 24

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device . . . 24

Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device . . . 25

Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device . . . 26

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device . . . 27

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device . . . 28

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device . . . 29

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device . . . 30

Appendix P SET test results for the 54AC164245 (UCL). . . 31

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device . . . 33

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device . . . 37

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device . . . 39

Revision history . . . 40

List of tables

List of figures

1 Total ionizing dose (TID)

2 Single event effects (SEE)

2.1 Test strategy

2.2 Test conditions

2.2.1 Reference documents

2.2.2 Facilities

2.2.3 Device information

2.3 Test results

2.3.1 SEL

2.3.2 SET

2.3.3 SEU

3 Glossary of terms

Appendix A General test setup (UCL)

Appendix B SEL test method (UCL)

Appendix C SEL test principle (UCL)

Appendix D SET test method (UCL)

Appendix E SET test principle (UCL)

Appendix F SET block diagram (TAMU)

Appendix G SEU test method (TAMU)

Appendix H Summary of SEL runs 70 to 75 for the 54AC14 device

Appendix I Summary of SEL runs 76 to 80 for the 54AC174 device

Appendix J Summary of SEL runs 1 to 6 for the 54AC244 device

Appendix K Summary of SEL runs 1 to 7 for the 54AC374 device

Appendix L Summary of SEL runs 1 to 8 for the 54AC164245 device

Appendix M Summary of SET runs 1 to 15 for the 54AC14 device

Appendix N Summary of SET runs 1 to 6 for the 54AC244 device

Appendix O Summary of SET runs 1 to 7 for the 54AC374 device

Appendix P SET test results for the 54AC164245 (UCL)

Appendix Q Summary of SET runs 9 to 85 for the 54AC164245 device

Appendix R Summary of SEU runs 81 to 106 for the 54AC174 device

Appendix S Summary of SEU runs 1 to 7 for the 54AC374 device

Revision history