Acceleration and Characterization of Protons and Ions
from Nanometer-Scale Thin Polymer Foil
Il Woo Choi
Center for Relativistic Laser Science, Institute for Basic Science (IBS)
Advanced Photonics Research Institute, Gwangju Institute of Science and Technology (GIST)
Korea
Ultrashort Quantum Beam Facility at GIST
2 2
Outline
PW laser and application facility at GIST
1
Ion acceleration using PW laser and ultrathin target
4
Ultrathin free-standing polymer target
3
Contrast enhancement and laser beam focusing
2
Conclusion
100 TW and PW Laser Systems, Interaction Target Chambers
Ultrashort PW laser system
Control room 100 TW laser-plasma laboratory X-ray generation target chamber Electron generation target chamber Ion generation target chamber Beam delivery vacuum tube Deformable mirror chamber PW laser-plasma laboratory
4 4 0 1 a 1 0 a
Gas, liquid, and solid target
(thickness : nm - mm – mm)
Radiations
(X-ray, THz, etc.)
Particles (electrons, protons, ions, etc.)
I > 1018 W/cm2
t < ps Laser
beam
Interaction of Ultrashort Ultraintense Laser with Matter
Interaction of laser and matter in relativistic regime
2 1 0 1 / 2 0 w / c m 0 D i m e n s i o n l e s s l a s e r a m p l i t u d e : 8 . 5 5 1 0 m e E a I m c m
T. Tajima and G. Mourou, PRST-AB 5, 031301 (2002).
e c v F E B
Opened up exotic research areas, such as the generation of ultrashort x-ray and particle sources, and the study on the high-field physics
Thin foil target Laser beam with
I ~1019 W/cm2
Protons Electrons
Electric field
Strong electrostatic (space charge) field :
B e e B e D 4 M e V / m = T V / m k T E n k T e m
Hot electron propagation : MeV energy, mC-mC charge
Optimum thickness : several tens of nm - several
m
m, depending on the laser contrast,
pulse duration, and intensity.
Target Normal Sheath Acceleration (TNSA) and Optimum Thickness
D. Neely, APL 89, 021502(2006). M. Kaluza, PRL 93, 045003 (2004).
IL ~ 1019 W/cm2
Contrast : 1010
- Transverse spreading
- Surface deformation and density gradient - Recirculation and refluxing
6 6
Electron-proton mixture
Proton layer Electron layer Electrostatic
field Circular-polarized laser
with I > 1020 W/cm2
Laser pulse pushes electrons forward and forms a high-density layer. A strong charge separation
force accelerates ions as a thin layer.
Ultrathin targets with nm-scale thickness
are necessary to balance the radiation pressure with
the restoring force given by the charge-separation field.
Radiation Pressure Acceleration (RPA) and Optimum Thickness
A. Henig, PRL 103, 245003 (2009).
= 0.8
m
m, I = 5×10
20W/cm
2(
a
0
= 10.8 for c-pol. laser)
n
e= 200
n
c→
d
= 14 nm
Normalized areal density : ec n d n Optimal RPA condition :
0
Ti:Sapphire Laser Systems : LiFSA, PULSER
T. J. Yu et al., Opt. Express 20, 10807 (2012) ; J. H. Sung et al., Opt. Lett. 35, 3021 (2010).
30 fs, 34 J, 1.1 PW
PULSER I PULSER II LiFSA
LiFSA
(100 TW : Light source for Femto Science and Applications)
8 8
Spectral bandwidth : 46 nm (FWHM) Pulse duration : 30.2 ± 1.8 fs for 30 pulses
Temporal Pulse Profile and Contrast Ratio of PULSER II
Contrast ratio of 1.5 PW and 100 TW laser pulses measured using a third-order autocorrelation
2.3×10−12 at -500 ps 4.8×10−10 at -50 ps
100 TW 1.5 PW
There are several peaks observed before the main pulse at 220 ps, 170 ps, 63 ps, 35 ps,
and 25 ps. The prepulse, in the 100 TW laser pulse, with a contrast ration of 2.7 ×
10−10 at 220 ps is a ghost due to the effect of the third-order correlation between the main pulse and the post-pulse at 220 ps. A post pulse was generated from an AR-coated window with a thickness of 2 cm, which corresponded at 220 ps after the main pulse, in a vacuum beam expander. However, the prepulse at 170 ps is real, and we think that it is from the nonlinear interference between the main pulse and the post-pulse originating from the high-damage-threshold broadband polarizer (PBSK, CVI). The origins of the prepulses, in the 100 TW laser pulse, at 63 ps, 35 ps, and 25 ps are currently under investigation.
We think the contrast ratio for 1.5 PW pulses would be worse than that for 100 TW pulses in the range over 300 ps when considering the energy increase in the booster amplifier. However, because of the instrument detection limit, it is hard to compare contrast ratios between 1.5 PW pulses and 100 TW pulses. We could not observe any serious degradation in the contrast ratio for 1.5 PW pulses less than less than 300 ps. The reason is that the gain of ASE inside the stretched pulse was similar to the gain experienced by the main pulse.
Pulse width after compressor 44.5 J, 30.2 fs → 1.5 PW
Insufficient for ultrathin target
P. Gibbon, Nature Physics 3, 369 (2007).
Contrast Enhancement Needed with Plasma Mirror
-0.6 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 M a xim u m p ro to n e n e rg y ( M e V ) Target position (mm) no pr oto n s
Contrast enhancement with one plasma mirror : ~100
10 10
Double Plasma Mirror (DPM) System for 100 TW Laser Pulse
0 100 200 300 400 500 0.2 0.3 0.4 0.5 0.6 (125,0.52) (406,0.59) (125,0.42) Re flectivity Energy fluence
(
J/cm2)
Plasma mirror system
Plasma mirror
(406,0.48)
Large area DPM and precise pre-alignment allows
repetitive operation.
• Spatial beam profile of the focused laser after DPM system for the energy fluence of (a) 90 J/cm2
and (b) 290 J/cm2. The insets show the focused image for these energy fluencies respectively
• 2-dimensional Normalized Standard Deviation distribution of near field for 15 laser shots with and without DPM. (a) without DPM, (b) for 90 J/cm2 with DPM, (c) for 290 J/cm2 with DPM.
Spatial Characteristics of Laser Beam Profile from DPM
stable stable unstable
-200 -100 0 100 200 0 20 40 60 80 100 120 140 160 (b) Horizontal Vertical Distance (mm) In tensity (ar b. u ni ts) -200 -100 0 100 200 0 50 100 150 200 250 300 Distance (mm) In tensity (arb. u ni ts) Horizontal Vertical (a) 400 500 600 400 500 600 400 500 600 400 500 600
12 12 Double plasma mirror OAP OAP 45o mirror 45o mirror Half-wave plate Half-wave plate 1580 mm 2740 mm
Incident laser from PW pulse compressor
To target chamber
200 mm
f = 2 m, 20° off-axis angle
Double Plasma Mirror System for PW Laser Pulse
~350 shots available for ~100 J/cm2
Repetitive operation
is possible by large area DPM and precise pre-alignemnt.
13 13
Temporal Contrast Ratio after PW Double Plasma Mirrors
Advantages when using a plasma mirror
- Contrast enhancement : ~10
4-
< 3
×
10
-11up to 6 ps before the main pulse
But, the overall reflectivity is only about 40%.
0 50 100 150 200 250 300 350 20 30 40 50 60 (90,0.52) (290,0.59) (90,0.42)
Re
flectivi
ty (%)
Energy fluence(
J/cm2)
DPM system DPM only (290,0.48) (a) -500 -400 -300 -200 -100 0 100 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 -400 -200 0 200 400 0.0 0.2 0.4 0.6 0.8 1.0 In ten si ty ( ar b . u n its ) Time (fs) SPIDER SEQUOIAIn
te
nsity (ar
b.
uni
ts
.)
Time (ps)
without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2)(b)
10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100Int
e
ns
it
y
(
a
rb.u
nit
s
.)
without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2)(c)
-1 0 1 2 3 4 5 10-3 10-2 10-1 100 101 102R
e
fle
c
tiv
ity
(%
)
with DPM (at 90 J/cm2) (d) 0 50 100 150 200 250 300 350 20 30 40 50 60 (90,0.52) (290,0.59) (90,0.42)Re
flectivi
ty (%)
Energy fluence
(
J/cm
2)
DPM system DPM only (290,0.48)(a)
-500 -400 -300 -200 -100 0 100 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 -400 -200 0 200 400 0.0 0.2 0.4 0.6 0.8 1.0 In ten si ty ( ar b . u n its ) Time (fs) SPIDER SEQUOIAIn
te
nsity (ar
b.
uni
ts
.)
Time (ps)
without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2)(b)
-20-18-16-14-12-10 -8 -6 -4 -2 0 2 4 6 8 10 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100Int
e
ns
it
y
(
a
rb.u
nit
s
.)
Time (ps)
without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2)(c)
-1 0 1 2 3 4 5 10-3 10-2 10-1 100 101 102Time (ps)
R
e
fle
c
tiv
ity
(%
)
with DPM (at 90 J/cm2)(d)
100 TW DPM
PW DPM
14 14 Vacuum pulse compressor Plasma mirror system SPIDER and third-order cross-correlator Beam switching chamber Beam switching chamber Electron target chamber Proton and ion
target chamber X-ray target chamber Beam switching chamber Reflection mirror mounted on kinematic base Bottom plate Top plate
100 TW Laser Beam Delivery and Target Chamber System
Beam alignment monitor I. W. Choi et al., J. Korean Phys. Soc. 55, 517 (2009).
X-ray generation target chamber
Electron generation target chamber Proton / ion generation
target chamber
Beam delivery vacuum tube
Deformable mirror chamber
16 16 PW laser-plasma laboratory
PW target chamber
for solid target interaction
- Inner diameter : 2.2 m
- Depth : 1.07 m from bread board - Volume : ~4 m3
- Material : Stainless steel + Aluminum - Height of laser beam : 1.4 m
- PW laser beam size : ~20 cm
Two PW Target Chambers and Beam Delivery System
기존 튜 브 사 용 PW target chamber I PW target chamber II Beam switching chamber Beam switching chamber Beam switching chamber Plasma mirror system PW pulse compressor I PW pulse compressor II PW Amp. I PW Amp. II
Two Interaction Target Chambers Operated for PW Laser Application
Compressor I
Compressor II
Plasma mirror
PW Chamber II
PW Chamber I
Two interaction chambers
(Cylindrical and Rectangular)
18 18
Alignment of Off-Axis Parabolic (OAP) Mirror and Target
I. W. Choi et al., J. Korean Phys. Soc. 55, 517 (2009). 5-hole aperture OAP mirror Laser beam Laser focus Apochromatic lens Image relay system Beam splitter Beam splitter Mirror CCD camera CMOS camera Target position monitor Focal spot analyzer z x y Wavefront sensor Image of 5-hole aperture Install led in target chamber
Laser energy and pulse width on target : 8.5 J, 30 fs
Focal spot size obtained with f/3 OAP : 4
m
m
Energy concentration in FWHM area : > 25%
→
7
×
10
20W/cm
2for PW laser + DPM
Focal Spot Characterization and Focusing Intensity
0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 Ene rgy c onc entrati on Radius (mm) > 25% in FWHM area -30 -20 -10 0 10 20 30 -30 -20 -10 0 10 20 30
V
ertical posi
tion
(
m
m)
Horizontal position (
m
m)
Focal spot size : 4.3 mm (FWHM) 0.0 0.2 0.4 0.6 0.8 1.0 -30 -20 -10 0 10 20 30 -30 -20 -10 0 10 20 30
V
ertical posi
tion
(
m
m)
Horizontal position (
m
m)
Focal spot size :
20 20
x
= +10
m
m
x
= +20
m
m
x
= +30
m
m
x
= +40
m
m
x
= +50
m
m
x
= +60
x
= 0
m
m
m
m
Much better accuracy than Rayleigh range ~50 mm
-100 0 100
-100
0
100
-100 0 100
Before damage After damage
Damage Position (mm) Po sitio n ( m m) x y OAP mirror Target and its movement Laser beam Focal spot analyzer Target position monitor Lens Beam splitter CCD CMOS
Accurate Target Alignment
Near-normal incidence
1. Commonly used targets : Al, Mylar, Si
3N
4, Diamond-like carbon, etc.
2. Alternative ultrathin target proposed
- Conjugate polymer material : F8BT, poly(9,90-dioctylfluorene-co-benzothiadiazole) - Polyfluorene derivative used for in polymer LED, organic solar cell and transistor
- Manufacture method : spin coating → floating on water → transferring to a target frame - Available thickness : 5-500 nm
- Chemical formula : (C35H42N2S)n
3. Advantages of the polymer target
- Easy manufacture, low material and production cost
- Low electron density of ~200 nc for 800-nm wavelength laser
→ Realization of ultraintense laser-ultrathin target interaction using relatively low laser intensity, such as relativistic transparency, RPA, etc.
22 22
Ultrathin Free-standing Polymer Target
50 mm
20 nm-thick polymer
200-300 laser
shots
possible
with one loading
in target chamber
1.2-mm thick Al : r.m.s roughness ~1 mm 70 nm polymer 500 m m Roughness of 100-nm thick polymer Flatness of 100-nm thick polymer x (mm) y (mm) z ( m m) x (mm) y (mm) z (m m ) Free-standing polymer attached on target frameCharacterization of Nanometer-Class Polymer Target
0.0 0.1 0.2 0.3 0.4 -30 -20 -10 0 10 20 Heig ht ( nm) Position (mm) 16 nmAlpha-step surface profiler - Thickness measurement range : > ~20 nm 101 102 103 -20 -10 0 10 20 Den t di ffer en ce ( m m) Film thickness (nm) Target frame Target 101 102 103 0 5 10 15 20 RMS r ou gh ne ss ( nm) Film thickness (nm) r.m.s roughness : < 10 nm Raleigh range >> dent distance → Frame surface alignment enough
24 24
X-ray reflectivity measurement
- Used for estimation of density, thickness, roughness - Critical angle for total external reflection :
X-ray Reflectivity Measurement for Thickness and Density
0.0 0.5 1.0 1.5 2.0 2.5 3.0 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 X -r a y r e fle cti vit y
Grazing incidence angle (Degree)
Spacing → Thickness Slope → Roughness 0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.2 0.4 0.6 0.8 1.0 X -r a y r e fle cti vit y
Grazing incidence angle (Degree)
Critical angle qc → Density 2 2 0 c o s 1 / c p q 0 / / c p n e n c q Substrate Film q X-ray beam
0 20 40 60 80 100 0 5 10 15 20 25 = 0.77 g/cm3, d = 26.8 nm = 1.46 g/cm3, d = 40.0 nm = 0.82 g/cm3, d = 53.1 nm = 1.018 g/cm3, d = 66.3 nm si n q m ( 10 -5 ) m2 = 1.073 g/cm3, d = 92.1 nm 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 20 = 1.18 g/cm3, d = 22.2 nm = 1.20 g/cm3, d = 28.3 nm = 1.08 g/cm 3 , d = 55.8 nm = 1.20 g/cm3, d = 75.8 nm si n 2 q m ( 10 -4 ) 2 = 1.15 g/cm3, d = 115.7 nm 2 s i n q Conjugated polymer, F8BT - Material density : 1.1-1.2 g/cm2
- Electron density : 3.5-3.8×1023/cm3 for C6+, H+, N7+, S10+
→ 200-220 nc for 800-nm laser wavelength
X-ray reflectivity measurement
- Intensity maxima
- Intercept with m2 = 0 → critical angle q c
- Slope of the linear dependence → thickness d
- Thickness measurement range : > ~1 nm
2 2 2 s i n s i n m c d q q m 2 2 2 2 s i n s i n 2 m c m d q q
Thickness and Density of Nanometer-Class Polymer Target
0.0 0.1 0.2 0.3 0.4 0.5 0.0 0.2 0.4 0.6 0.8 1.0 Measurement Simulation
Incidence angle (degree)
Refl ec tiv ity (a. u.) Polymer qc= 0.16o = 1.15 g/cm3 Silicon qc= 0.22o = 2.307 g/cm3
26 26 0 1 2 3 4 5 100 102 104 106 108
Incidence angle (degree)
R eflec tiv ity (a . u.) Spin coating on Si Thickness d = 7.3 nm Measurement 0 1 2 3 4 5 100 102 104 106
108 Spin coating on quartz + Transferring to Si Thickness d = 9.2 nm
Measurement Simulation
Incidence angle (degree)
R eflec tiv ity (a . u.) 0 1 2 3 4 5 10-1 101 103 105 107 Measurement 4 nm, simulation 22 nm, simulation R eflec tiv ity (a . u.)
Incidence angle (degree)
Thickness Possible Down to ~4 nm
- Available thickness : < 5 nm
- Thickness reproducibility : ~90%
Thomson Parabola Spectrometer (TPS)
2 2 2 , 2 2 2 1 , ( 2 ) i i i i f f i i f q B L L q E L L x L y L m v m v m E E y x y x q B L L L B v 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 E lec tr ic de flec tion po s it ion , y ( mm )Magnetic deflection position, x (mm)
C+ C2+ C3+ C4+ C5+ C6+ H+
Constant momentum-to-charge line
Constant energy-to-charge line
Constant velocity line
0.5 MeV 1 MeV C1+ C2+ C3+ C4+ C5+ C6+ H+ Constant energy- per-charge line 0 10 20 30 40 50 0 10 20 30 El ect ric de fle ct io n (mm) Magnetic deflection (mm)
Thomson parabola spectrometer
Beam collimator Ion detector (CR-39, MCP, plastic scintillator, imaging plate) Ions E B Magnets B field E field Electrodes x y CCD or ICCD Lens and filters Mirror
28 28
Selection of scintillator thickness
Time-Of-Flight (TOF) Spectrometer
High energy ion Low energy ion Ion detector : Scintillator etc. Ion source Target Laser beam L 2 2 2 2 2 2 2 1 1 , 1 1 2 i i i i E m c L t E m c c L E E c t m c m c Plastic scintillator (BC-408) Reflection mirror Photomultiplier tube a b b' a' Ion beam Lens Filters ( = 425 nm) Aperture 10-1 100 101 102 100 101 102 103 104 105 Plastic Scintillator (C10H) Density = 1.032 g/cm2 Project ed ra nge ( m m)
Ion beam High voltage power supply Oscilloscope Sweeping magnets Diode laser High voltage power supply Time-of-flight spectrometer Thomson parabola spectrometer Target Laser beam Screen -50 0 50 100 150 200 250 300 350 400 -500 -400 -300 -200 -100 0 t = 92.00 ns T = 1.683 MeV t = 11.80 ns P ho tomul ti pl ier tub e vol tag e ( V ) Flight time (ns) t = 5.50 ns 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 108 109 1010 1011 1012 P roton nu m be r (pa rt icl es/M eV /sr /l ase r sho t)
Proton energy (MeV)
Time-of-flight spectrometer Thomson parabola spectrometer
Noise level 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 E lectr ic de fl ecti on ( m m ) Magnetic deflection (mm) Zero-deflection point H+ 0.3 MeV 0.5 MeV 1.0 MeV 1.7 MeV E(up) E(down) E = 0
+
Ion Spectrometer Composed of TOF and TP Spectrometers
I. W. Choi et al., Rev. Sci. Instrum. 80, 053302 (2009).
0 5 10 15 20 25 30 35 40 0 2 4 6 E-de fl e ct io n (mm) B-deflection (mm) T/q = 1 MeV T/q = 2 MeV T/q = 3 MeV
Highest constant velocity line for carbon ions C+ C2+ C3+ C4+ C5+ C6+ H+ TP spectrometer 1 10 0 50 100 150 c/ v Energy (MeV) TOF spectrometer Proton Carbon ion
30 30 B. Hidding et al., Rev. Sci. Instrum. 78, 083301 (2007)
Imaging plate
Ion Detectors : MCP, Imaging Pate (Limited Thickness)
Microchannel plate (MCP)
R. Prasad et al., Nucl. Instrum. Methods Phys. Res. Sect. A. 623, 712 (2010).
25
1.0
A. Mančić et al., Rev. Sci. Instrum. 79,073301 (2008)
Stopped energies in 1-mm glass : 13 MeV (Proton), 275 MeV (Carbon)
Response dependent on
- Ion energy and species
- Penetration depth of ions into the channel - Channel bias angle
- Open area ratio
http://www.detectors.saint-gobain.com Ep = 32.8 MeV for 10-mm plastic scintillator
Plastic scintillator
2 1 d E S d L d x d x d E d E k B C d x d x Quenching effect dL/dx = Flourescence light dE/dx = Energy loss S = Scintillation efficiencyIon Detectors : Plastic Scintillator
32 32 0 5 10 15 20 0 5 10 15 20 Longitudinal di rection (mm) Lateral dire ction (mm) Al + CR-39 stacks Ep = 40 MeV Longitudinal range = 13.1 mm Longitudinal straggle = 230 mm
Energy and Beam Profile Measurement Using Stacked Detectors
100 101 102 10-2 10-1 100 101 102 Pro je cte d ra ng e (m m )
Proton energy (MeV)
CR-39 Range 0 5 10 15 20 25 0 10 20 30 40 50 60 Pro to n e ne rgy (m m ) Detector depth (mm) 0 5 10 15 20 En ergy lo ss (M eV/m m ) Al + CR-39 stacks 50 MeV 40 MeV 30 MeV 20 MeV 10 MeV
F. Nürnberg, Rev. Sci. Instrum. 80, 033301 (2009)
Proton Acceleration Using PW Laser Pulses
Mirror
Mirror Mirror
OAP
f = 80cm Target surface monitor
Target Focal spot monitor CR39 Proton beam To Thomson Parabola Target : polymer Thickness : from 10 nm to 100 nm Intensity range w/ PM : 0.5×1020 W/cm2 – 3.3×1020 W/cm2
Linear pol. : s-pol on the target
34 34 6th CR39 7th CR39 8th CR39 9th CR39 10th CR39 1.2cm 1.2cm 1st CR39 2nd CR39 3rd CR39 4th CR39 5th CR39
8.96<E<9.21 MeV 13.14<E<13.34 MeV 16.42<E<16.962MeV 19.22<E<19.48 MeV
1.14<E<1.72 MeV
21.78<E<21.99 MeV 24.04<E<24.31 MeV 26.15<E<26.54 MeV 28.18<E<28.46 MeV 30.08<E<30.36 MeV
Zero order
20 MeV (H+) 10 MeV (H+) 75 MeV (C6+) 60 MeV (C6+) 30 MeV (C6+)H
+C
6+ 6th CR39 7th CR39 8th CR39 9th CR39 10th CR39 1.2 cm 1.2 cm 1st CR39 3rd CR39 4th CR39 5th CR398.96<E<9.21 MeV 13.14<E<13.34 MeV 16.42<E<16.962MeV 19.22<E<19.48 MeV
21.78<E<21.99 MeV 24.04<E<24.31 MeV 26.15<E<26.54 MeV 28.18<E<28.46 MeV 30.08<E<30.36 MeV
(27.8deg.= 485 mrad) (0.3deg.= 5.2 mrad) 1.14<E<1.72 MeV 2nd CR39 30 MeV (H+) 20 MeV (H+) 10 MeV (H+) 90 MeV (C6+) 60 MeV (C6+) 30 MeV (C6+)
Zero order
H
+C
6+- Target thickness :
30 nm
- Laser intensity :
3.3
×
10
20W/cm
2Good Agreement between TPS and CR-39 Measurement
0 10 20 30 40 50 0 5 10 15 20 Lon gitudinal rang e (mm)
Proton energy (MeV)
5 10 15 20 25 30 35 108 109 1010 d N / d E ( a. u .)
Proton energy (MeV)
- Target thickness :
70 nm
- Laser intensity :
3.3
×
10
20W/cm
2Good Agreement between TPS and CR-39 Measurement
4 6 8 10 12 14 16 18 20 22 108 109 1010 d N / d E ( a . u .)
Proton energy (MeV)
36 36
45 MeV Proton Energy Achieved with 10-nm Thick Polymer
Thomson parabola and ion energy spectra obtained with a
3.3
×
10
20W/cm
2laser intensity and
10-nm thick polymer
target
Continuous energy increase until 10-nm target implies the high performance of double
plasma mirror system,
very high contrast up to several ps
before main pulse arrival.
Conclusions
Laser beam
Well-controlled temporal and spatial properties
Low- or high- contrast, depending on target type
Rough alignment for each shot and robust shooting - Reproduced focusing quality
- Precise target positioning onto laser focus
Target
Production of ultrathin targets with large area
Cost effective, stable, and reproducible way
New and exotic targets : foam, nano-structure
Diagnostics system
Real-time and fast characterization
Extending detection range to ~100 MeV and higher
Several issues solved already or to be solved for real applications
Thank you for your attention
38 38
Electron
Spectrometer and Detection
Magnets Beam
collimator
Electron detector for high energy B field
Electrons
ICCD Electron detector
for low energy
10 50 0.91 T 1.4 T 30 Lens and filters Mirror C. M. S. Sears et al., RSI 81, 073304 (2010).
Optional depending on detector
0 10 20 30 40 50 0 5 10 15 20 Z Deflection mm Y De fl ec ti o n mm B = 0.52 T Ee = 1.2 – 10.8 MeV Electron detector 2 e = f o r e m c E E m c e B e c B
40 40
Electron Detectors : Imaging Pate, Lanex
Structure of BAS-SR imaging plate
Protective layer 6 µm PEF Photostimulable phosphor layer thickness : 120 µm Phosphor : BaFBrI:Eu2+ Support layer : 190 µm PET 160 µm ferrite layer photo-stimulated luminescence (PSL)
Response of BAS-SR to electrons K. A. Tanaka, RSI 76, 013507 (2005). Y. Glinec, RSI 77, 103301 (2006).
Emission spectra of Lanex screen
Composition of the Lanex screen.
Composition of Kodak Lanex Fine screenEnergy deposited in the scintillator layer of Lanex Fine screen
Lanex screen : Kodak
Imaging plate : Fuji film
B = 0.45 T, s = 0.1 m, q = 30 mrad B = 0.45 T, h = 6 mm (s = 20 m, q = 0.3 mrad) B = 0.45 T, s = -0.1 m, q = 30 mrad 5 10 15 19 MeV 5 10 15 MeV 2 2 2 2 2 x x x q q
Enhancement in Energy Resolution Adapting Focusing Geometry
2 2 3 2 2 3 2 x x x d f d a d f d d d f d f q q q q
for non-focusing geometry
42 42 ESM at q = -56.25o TOF at q = 22.5o ESM at q = -11.25o ESM at q = 11.25o ESM at q = 33.75o CIS at q = 0o CIS at q = -22.5o Target ESM at q = -33.75o Scattering screen Visible spectrometer Laser beam (p-pol., 22.5o)
CIS : Composite ion spectrometer ESM : Electron spectrometer
TOF : Ion time-of-flight spectrometer
1 2 3 4 5 6 7 8 9 106 107 108 109 1010 1011 1012 Al 1.2 mm Polymer 70 nm Pro to n n um be r (1 /M eV/s r)
Proton energy (MeV)
0-degree (Target normal) 22.5-degree 1 2 3 4 102 103 q = -56.25o q = -33.75o Ele ctro ns / M eV (a . u .)
Electron energy (MeV)
q = -11.25o q = 11.25o q = 33.75o Te = 0.65 MeV Te = 1.2 MeV 0.01 0.1 1 10 0 2 4 6 8 M ax im um p rot on e ne rgy (M eV) Target thickness (mm) 0-degree (Target normal) 22.5-degree
Proton Energy and Electron Spectra Dependent on Observation Angle
0.5 1.0 2.0 3.0 E (MeV) 0.5 1.0 2.0 3.0 E (MeV) B = 0.17 T q = 33.75o B = 0.52 T q = 11.25o B = 0.52 T q = -11.25o B = 0.52 T q = -33.75o B = 0.17 T q = -56.25o 2 4 6 8 E (MeV) 10 35 fs(FWHM) , 22.5o incidence angle I = 4×1019 W/cm2, a 0 = 4.33,
Polymer 70 nm Polymer 20 nm 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 Elec tric def lec tion (m m ) Magnetic deflection (mm) 0.5 MeV 1 MeV C+ C2+ C3+ C4+ C5+ C6+ Proton 20090831-1_4
Maximum proton energy obtained : 8 MeV
1 2 3 4 5 6 7 8 9 107 108 109 1010 1011 1012 Al 1.2 mm Polymer 70 nm Prot on num ber (1/ M eV/ s r)
Proton energy (MeV)
Laser Target Protons Carbon ions included Polymer Aluminum 0.01 0.1 1 10 1010 1011 0.0 0.5 1.0 4 6 8 d N to t / d ( 1/ sr ) Target thickness (mm) T p ( M eV ) E m a x ( M eV )
44 44 1.2-mm thick aluminum 70-nm thick polymer 2 3 4 5 6 7 108 109 1010 1011 1012 100 101 102 103 104 Experiment P ro to n n u m b e r ( 1 /M e V /s r)
Proton energy (MeV)
T p = 1.1 MeV Simulation P ro to n n u m b e r ( A .U .) 2 3 4 5 6 7 107 108 109 1010 1011 1012 100 101 102 103 104 Experiment P ro to n n u m b e r ( 1 /M e V /s r)
Proton energy (MeV)
Tp = 1.18 MeV Simulation P ro to n n u m b e r ( A .U .)
- I
= 5
×
10
19W/cm
2,
= 5
m
m (FWHM),
t
= 34 fs,
- Linearly polarized pulse, 22.5-degree incident angle
- Assuming initial plasma density :
n
= 250
n
cr(Simulation with ALPS-2D code)
Proton density map at 216 fsLaser pulse
Optimal Target Thickness Well Agreed with PIC Simulation
Competition of two opposite tendencies :
- Large recirculation effect at thinner target : enhancing ne
- Large laser absorption at thicker target : enhancing Te
Accelerating sheath electric field
in TNSA
B e s h e a t h e B e D 4 k T E n k T e 1 2 3 4 5 6 7 8 100 101 102 103 104 10 nm 20 nm 30 nm 70 nm 150 nm 400 nm Proton num ber ( A.U.)Proton energy (MeV) 10 100
3 4 5 6 7 8 9 Proton ene rgy (MeV ) Target thickness (nm)
46 46 2 0 r e l S k i n d e p t h : , w h e r e 1 s p e p e c c l a 2 2 2 2 r e l D i s p e r s i o n r e l a t i o n : , p e c c c k n n
Relativistic Transparency Effect at the Thinnest Target : RPA
10-nm target
20-nm target
r e l 0 4 . 4 4 , 1 9 n m f o r 4 . 3 3 c c s n n l a -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0 10 20 30 345 350 17.5 fs 35.0 fs 52.5 fs 70.0 fs E le ctr o n d e n sit y ( n c ) Position (mm) -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0 50 100 150 200 600 650 17.5 fs 35.0 fs 52.5 fs 70.0 fs E le ctr o n d e n sit y ( n c ) Position (mm)- The 2 spectra were not detected (or were nearly at the noise level) in the case of Al targets. - The 2 intensity shows similar dependence on the target position to proton energy.
Strong 2
(in Experiment) and HOH (in PIC Simulation) Observed
Incident laser beam profile on target
Reflected beam profile from target
Target Reflected bream Incident laser beam Visible spectrometer Screen
PIC simulation on the harmonic generation with PIC simulation code
Incident laser beam Transmitted beam Reflected beam 10 mm -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0 1 2 3 4 5 6 7 0 1 2 3 4 5 En ergy ra tio o f 2 to (% ) Target position (mm) Pro to n e ne rgy (M eV) Emax E2 /E 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2 4 6 8 In te ns ity (a . u .) Wavelength (mm) : saturated Second order of 2 0 2 4 6 8 10 12 14 16 18 20 10-4 10-3 10-2 10-1 100 Harm on ic in te ns ity (a . u .) Harmonic order Reflected HOH Transmitted HOH
48 48
PW (PUSER) and 100 TW (LiFSA)
Ti:Sapphire
Laser System
PULSER (1 PW : Petawatt Ultrashort Laser Source for Extreme science Research)
LiFSA (100 TW : Light source for Femto Science and Applications)
(First Power Amp.) (Second Power Amp.)
(Booster Amp.) (Booster Amp.)
Flat-field soft x-ray spectrometer with varied line-spacing concave grating
- Components : Varied line-spacing concave grating (1200 or 2400 grooves/mm),
Entrance slit, Toroidal mirror, Soft X-ray detector(e.g. CCD), Vacuum housing
Space-resolving capability using pre-focusing optics
- Increasing light collection efficiency - Source characterization vs position
S a g i t t a l D i r e c t i o n : F o r m a t i o n o f S p e c t r a l I m a g e S p e c t r a l L i n e W a v e l e n g t h M e r i d i o n a l D i r e c t i o n : F o r m a t i o n o f S p e c t r a l L i n e
Space-Resolving Flat-Field Soft X-ray Spectrometer
1 1 1 1 1 1 1 1 2 T a n g e n t i a l F o c u s i n g c o s 1 1 2 c o s S a g i t t a l F o c u s i n g m s r r R r r a a G r a t i n g T o r o i d a l m i r r o r S p e c t r a l p l a n e ( s o f t x - r a y d e t e c t o r ) S l i t L r 1 a1 1 z 1 ' r m1' r m2 ' a 2 2 ' ' ' ' 2 z 2 M e r i d i o n a l P l a n e r s2 r A p e r t u r e s t o p 0 rs1' 0' ' 0' M e r i d i o n a l p l a n e S a g i t t a l P l a n e
50 50 10 100 10-3 10-2 10-1 Diffraction order m = -1 m = -2 m = -3 m = -4 m = -5
D
iff
racti
on
E
ff
ici
en
cy
Wavelength (A)
0 10 20 30 40 50 60 70 80 90 10010
-310
-210
-1 Diffraction order m = 1 m = 2D
iff
racti
on
E
ff
ici
en
cy
Wavelength (A)
Blaze wavelengths
- m
b0= 100.5 Å for 1200 grooves/mm grating
- m
b0= 15.7 Å for 2400 grooves/mm grating
1200 grooves/mm
grating
2400 grooves/mm
grating
D. G. Lee et al., Appl. Phys. Lett. 81, 3726 (2002).
Spectrally resolved divergence measurement of high-order harmonics
H. T. Kim et al., Phys. Rev. A 67, 051801(R) (2003).Continuously wavelength-tuned high-order harmonics from He atoms
High Order Harmonics from Gas (He, Ar) Target
Sagittal focusing (Toroidal mirror) → Enhancing light collection Sagittal diverging (Cylindrical mirror) → beam profile measurement
52 52
RHHG with High and Low Contrast Laser Pulses
I J. Kim, K.H. Pae, C.M. Kim, H.T. Kim, H. Yun, S.J. Yun, J.H. Sung, S.K. Lee, J.W. Yoon, T.J. Yu, T.M. Jeong, C.H. Nam, and J. Lee, “Relativistic frequency upshift to the XUV regime using self-induced oscillatory flying mirrors,” Nat. Commun. (accepted).
Highest Relativistic Harmonics with < 100 fs Laser Pulses
I = 9×1019 W/cm2 (a0=6.5) 1000 800 600 400 200 Maximum order : 43th n-8/3 I = 4.5×1019 W/cm2 (a 0=4.6) Harmonic order
54 54 Pinhole and x-ray filter CCD camera a b M = b / a = ~10, Resolution = d(1+1/M)
Hard X-Ray Image Acquisition with X-Ray Pinhole Camera
Gate valve X-ray filter Pinhole Hard X-ray CCD 0 5 10 15 20 25 0.1 1 Al 1 mm Al 3 mm Be 10 mm Be 25 mm Tra ns m is sio n
Photon energy (keV)
X-ray filter selection for E > 1 keV
K edge : 1.5596 keV
70 mm (Full Width) 30 mm (FWHM)
(c) -0.1 0.0 0.1 0.2 20 40 60 80 100 F W H M o f x-ray ima g e ( m m) Target position (mm) (d) -0.1 0.0 0.1 0.2 0.5 1.0 1.5 2.0 2.5 0.5 1.0 1.5 Ma xi mu m p ro to n e n e rg y (Me V) Target position (mm) Pea k in te n si ty (1 0 18 W /cm 2 ) x = 0.2 mm x = 0.1 mm x = 0 x = -0.1 mm x = -0.3 mm (b) x = 0.2 mm x = 0.1 mm x = 0 x = -0.1 mm x = -0.3 mm (a) x > 0 x < 0 Laser Target
Correlation between Laser Focus Image, X-ray Image and Proton Energy
2 2 m a x h o t p p p p i a c c 2 2 1 8 h o t p e 2 s h e a t h 0 0 l a s e r p s h e a t h 2 l n 1 , / 2 1 / 1 . 3 7 1 0 1 t a n , / e E T t t t t e T U m c I S r d n f E c t U S m q
Self-similar, isothermal, fluid model
- P. Mora, PRL 90, 185002 (2003).
- J. Fuchs, NP 2, 48 (2006).
56 56
Contrast Ratio Enhancement Using Double Plasma Mirror System
0 50 100 150 200 250 300 350 20 30 40 50 60 (90,0.52) (290,0.59) (90,0.42) Re flectivi ty (%) Energy fluence (J/cm2) DPM system DPM only (290,0.48) (a) -500 -400 -300 -200 -100 0 100 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 -400 -200 0 200 400 0.0 0.2 0.4 0.6 0.8 1.0 In ten si ty ( ar b . u n its ) Time (fs) SPIDER SEQUOIA In te nsity (ar b. uni ts .) Time (ps) without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2) (b) -20-18-16-14-12-10 -8 -6 -4 -2 0 2 4 6 8 10 10-13 10-12 10-11 10-10 10-9 10-8 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 Int e ns it y ( a rb.u nit s .) Time (ps) without DPM with DPM (at 90 J/cm2) with DPM (at 290 J/cm2) (c) -1 0 1 2 3 4 5 10-3 10-2 10-1 100 101 102 Time (ps) R e fle c tiv ity (% ) with DPM (at 90 J/cm2) (d) ~4.2 ps >1011
(a) Reflectivity as a function of the energy fluence incident on the first PM. (b) Temporal profiles of the laser beam between -500 ps and +150 ps, (c) between -20 ps and +10 ps and (d) Time-resolved reflectivity for the energy fluence of 90 J/cm2 on DPM. The
inset in Fig. (b) shows the temporal profiles of laser pulse measured with SPIDER and SEQUOIA respectively.
Shock
wave speed : ~10 mm/ns
~10 nm/ps Reflectivity of plasma mirror system : > 40% for
laser energy fluences